YVO_4∶Eu~(3+)@SiO_2核壳结构纳米复合材料的合成与表征

用沉淀法制备了尺寸约为8 nm的YVO4∶Eu3+纳米粒子,然后用反相微乳液法在YVO4∶Eu3+纳米粒子的表面包覆了一层Si O2壳。利用XRD、TEM、UV-Vis吸收光谱和光致发光光谱对合成的样品进行了表征。得到的复合物具有较好的核壳结构,通过改变硅酸四乙酯的用量可以改变Si O2壳的厚度。研究了Si O2壳对YVO4∶Eu3+发光性质的影响,结果表明:包覆和未包覆的样品在紫外光激发下都有Eu3+的特征发射;随着Si O2壳厚度的增加,发光强度和量子效率越来越低,Eu3+格位对称性越来越高。     

PbS纳米颗粒复合的溶胶凝胶薄膜的飞秒非线性光学特性

通过光Kerr效应研究了PbS半导体纳米颗粒的三阶光学非线性响应。在较低的激发强度下,单激子态的饱和吸收和双激子效应的激发态吸收对非线性的贡献同时存在;而在高激发强度下,双激子效应是主要的。计算了高激发强度下(4mJ/cm²)PbS半导体纳米颗粒的三阶非线性光学极化率为5.1×10^-10esu。     

Influence of embedded particles on microstructure, corrosion resistance and thermal conductivity of CuO/SiO2 and NiO/SiO2 nanocomposite coatings

Homogeneous CuO/SiO₂ and NiO/SiO₂ nanocomposite coatings containing CuO and NiO nanoparticles in silica matrix were successfully synthesized by sol–gel process on an aluminum alloy substrate, respectively. The evolution of phase and morphology of both nanocomposites was characterized by XRD, SEM, TEM and FTIR. The effect of incorporating various nanoparticles on the corrosion behavior and the thermal conductivity of nanocomposite coatings was investigated by potentiodynamic polarization curve and comparative exponential method. The thermal conductivity as well as the corrosion resistance of nanocomposite coatings was significantly improved by the introduction of metal oxide particles. In comparison with NiO/SiO₂ nanocomposite coatings, CuO/SiO₂ composite coatings displayed lower protective behavior as well as higher thermal conductivity. Experimental results revealed that those improvements can directly be related to the nanocomposite effect and the nature of added nanoparticles.     

Investigation of 1.3 μm emission in Nd-doped bismuth-based oxide glasses

Nd₂O₃-doped 43Bi₂O₃–xB₂O₃–(57−x)SiO₂–1.0Nd₂O₃ (x=57, 47, 39, 28.5, 19.5, 10, 0 mol%) bismuth glasses were prepared by the conventional melt-quenching method, and the Nd³⁺: ⁴F_3/2→⁴I_13/2 fluorescence properties had been studied in an oxide system Bi₂O₃–B₂O₃–SiO₂. The Judd–Ofelt analysis for Nd³⁺ ions in bismuth boron silicate glasses was also performed on the basis of absorption spectrum, and the transition probabilities, excited-state lifetimes, the fluorescence branching ratios, quantum efficiency and the stimulated emission cross-sections of ⁴F_3/2→⁴I_13/2 transition were calculated and discussed. The stimulated emission cross-sections of 1.3 μm were quite large due to a large refractive index of the host. Although the effective bandwidths decreased with increasing SiO₂ content, quantum efficiencies and stimulated emission cross-sections enhanced largely with increasing SiO₂ content.     

Nanoparticle-induced multi-functionalization of silicon: A plug and play approach

Here, we demonstrate a “plug and play” approach to achieve multi-functionalization of Si. In this approach, externally synthesized functional nanoparticles are introduced onto device quality Si wafers and the surface chemical bonds are manipulated. Sonochemically synthesized Fe₂O₃ nanoparticles are introduced onto Si from an alcohol suspension. On annealing this sample in ultra-high vacuum, the oxygen atoms change the bonding partner from Fe to Si and desorb as SiO at 750 °C. This results in the formation of nanoparticles of Fe on the surface and exhibits ferromagnetic behavior. Deposition of a thin layer (2 nm) of Si onto the sample containing the metallic Fe nanoparticles followed by annealing at 560 °C leads to optically active Si. Photoluminescence measurements show that this sample emits light at three different wavelengths, namely 1.57, 1.61 and 1.63 μm, when excited by He–Ne or Ar lasers. Oxidation of this material results in the formation of a selective capping layer of SiO₂. Thus we obtain multi-functional Si in an “all in one” form and we believe that this approach is universal.     

CdS化学修饰TiO2纳米管阵列电极的传质特性分析

通过声电阳极氧化-化学沉积的方法制备CdS修饰的TiO₂纳米管阵列,并对其进行形貌表征及光电性能和传质特性的研究。结果表明;相对于未修饰的TiO₂纳米管列电极,CdS纳米粒子的化学修饰在增强电极对可见光吸收能力的同时,可减小电荷载流子的迁移阻力而有效提高光生电荷的分离和传递速率。在超声场中进行化学沉积,CdS纳米粒子可在TiO₂纳米管壁上均匀沉积,使得传质阻力进一步降低而获得相对最大的光电流和电荷载流子密度(9.29×10¹⁹cm^-3)。     

Exchange coupling effects in NiO/Co and NiO/permalloy bilayers

NiO/Co and NiO/Ni₈₀Fe₂₀ bilayers were prepared at 293 onto SiO₂(1 0 1)/Si(1 1 1) and glass substrates using UHV (5×10⁻¹⁰ mbar) RF/DC magnetron sputtering. Results on magnetic measurements showed that the exchange biasing and coercive fields are inversely proportional to the Co and Ni₈₀Fe₂₀ (Py) layer thickness down to 2 nm. A maximal RT coupling energy for the NiO–Co and NiO–Py interface was estimated as 0.04 and 0.03 mJ/m² for the samples prepared onto SiO₂(1 0 1)/Si(1 1 1) substrates.     

不同钝化结构对非极性AlGaN-MSM紫外探测器性能的提升

在r面蓝宝石衬底上,采用金属有机化学气相沉积（MOCVD）法高温生长了未掺杂非极性AlGaN半导体薄膜,在此基础上制备了金属-半导体-金属（MSM）结构的紫外探测器。系统研究了在AlGaN半导体薄膜表面分别磁控溅射SiO₂纳米颗粒与SiO₂钝化层两种钝化手段对非极性AlGaN-MSM结构的紫外探测器性能的影响。实验结果表明：磁控溅射SiO₂纳米颗粒钝化或SiO₂钝化层两种手段都能提升AlGaN-MSM结构紫外探测器性能。暗电流测试表明,SiO₂纳米颗粒和SiO₂钝化层可使器件暗电流下降1~2个数量级,达到nA量级。光谱响应测试发现,在5 V偏压下,探测器在300 nm处具有陡峭的截止边,这表明其具有很好的深紫外特性,光谱响应提高了10³倍,紫外可见抑制比高达10⁵。     

CdSe:Nd纳米晶及CdSe:Nd@SiO2核壳结构的合成及发光性能

利用有机相法合成Nd³⁺掺杂CdSe纳米晶（CdSe∶Nd）,通过X射线粉末衍射（XRD）、透射电镜（TEM）、紫外吸收光光谱及荧光光谱表征,证明Nd³⁺已经成功掺入到CdSe的晶格中。与纯CdSe纳米晶相比,CdSe∶Nd纳米晶的结构仍为立方晶型,且形貌近似球形,均匀分散,粒径约为2~4 nm。紫外吸收峰和荧光发射峰都发生红移,而且掺杂后的CdSe∶Nd纳米晶量子产率也提高,这可能是由于掺杂Nd³⁺引入了新的杂质能级,带隙减小。为了实现CdSe∶Nd纳米晶的可加工性和功能性,通过微乳法合成SiO₂壳包覆的CdSe∶Nd纳米球（CdSe∶Nd@SiO₂纳米球）,CdSe∶Nd@SiO₂纳米球呈均匀球形,直径约为100~115 nm,并且包壳后的CdSe∶Nd@SiO₂纳米球发射峰（581 nm）与CdSe∶Nd纳米晶（598 nm）相比,发光强度提高且发射峰蓝移,蓝移约为17 nm,可能是因为SiO₂壳可以减少纳米晶表面的非辐射跃迁以及改善表面缺陷导致的。     

CdS/ZnS core–shell nanoparticles in arachidic acid LB films

Core–shell CdS/ZnS nanoparticles in arachidic acid film were prepared through a novel Langmuir–Blodgett (LB) approach. Post-deposition treatment of the precursor LB multilayers of cadmium arachidate with H₂S gas followed by intercalation of Zn²⁺ ions and further sulfidation result in the formation of CdS/ZnS nanoparticles in the LB film. The formation of these nanoparticles and resulting changes in layered structures were studied by FTIR and X-ray reflection measurements. The optical properties were studied using UV–vis absorption and photoluminescence spectroscopy. A red-shift in the absorption spectrum and enhancement of CdS excitonic emission together with reduction of surface states emission suggest that after the intercalation step, a thin layer of ZnS surrounds the CdS nanoparticles, thus forming a core–shell structure. Subsequent to the second sulfidation, a further red-shift in absorption suggests the formation of a thicker ZnS coating on CdS. Electron diffraction of CdS nanoparticles coated with thicker ZnS showed the diffraction patterns of only ZnS, as expected for core–shell structures.     

三联吡啶钌超分子包合物及其SiO2复合纳米粒的电化学发光信号放大

利用环糊精类物质能够形成超分子包合物的性质,研究了电中性的β-环糊精（β-CD）和负电性的羧甲基-β-环糊精（CM-β-CD）与电化学发光（ECL）活性物质三联吡啶钌（Ru（bpy）₃²⁺）形成超分子包合物的能力及其对ECL的增强作用。结果表明：形成的超分子包合物能够增强Ru（bpy）₃²⁺的ECL,其中CM-β-CD具有更强的增强作用。相对于Ru（bpy）₃²⁺,CM-β-CD增强了1.42倍,而β-CD仅为1.28倍。以制备的表面电荷为负的SiO₂纳米粒为载体,考察了其对Ru（bpy）₃²⁺超分子包合物的吸附能力。结果表明,与Ru（bpy）₃²⁺的CM-β-CD超分子包合物相比,SiO₂纳米粒载体对Ru（bpy）₃²⁺的β-CD 超分子包合物表现出了更强的吸附能力。制备了ECL信号放大能力最强的β-CD-Ru（bpy）₃²⁺超分子包合物的SiO₂复合纳米粒。     

Defect versus nanocrystal luminescence emitted from room temperature and hot-implanted SiO2 layers

Silicon nanocrystals have been synthesized in SiO₂ matrix using Si ion implantation. Si ions were implanted into 300-nm-thick SiO₂ films grown on crystalline Si at energies of 30–55 keV, and with doses of 5×10¹⁵, 3×10¹⁶, and 1×10¹⁷ cm⁻². Implanted samples were subsequently annealed in an N₂ ambient at 500–1100°C during various periods. Photoluminescence spectra for the sample implanted with 1×10¹⁷ cm⁻² at 55 keV show that red luminescence (750 nm) related to Si-nanocrystals clearly increases with annealing temperature and time in intensity, and that weak orange luminescence (600 nm) is observed after annealing at low temperatures of 500°C and 800°C. The luminescence around 600 nm becomes very intense when a thin SiO₂ sample is implanted at a substrate temperature of 400°C with an energy of 30 keV and a low dose of 5×10¹⁵ cm⁻². It vanishes after annealing at 800°C for 30 min. We conclude that this luminescence observed around 600 nm is caused by some radiative defects formed in Si-implanted SiO₂.     

Visible photoluminescence from a-Si : H/SiO2 superlattices fabricated by UHV evaporation

Hydrogenated amorphous-Si/SiO₂ (a-Si:H/SiO₂) superlattices with different a-Si : H thickness in the range of a few nanometers have been fabricated by ultra high vacuum evaporator (UHV evaporator). The photoluminescence (PL) of our superlattices is observed in the visible spectral region and the peak energy shifts to higher energy as the a-Si : H layer thickness decreases. The temperature dependence of the PL spectra reveals four sub-bands by fitting. Bands at 2.2, 1.9, 1.65 and 1.45 eV are detected and are attributed to E′δ centers, nonbridging-oxygen–hole centers (NBOHC), Si/SiO₂ interface and a-Si : H layer, respectively. We explain the overall blueshift of the PL spectra by the modification of the contribution of these sub-bands.     

Band bending at the Si(1 1 1)–SiO2 interface induced by low-energy ion bombardment

Experiments employing photoreflectance spectroscopy have uncovered band bending due to electrically active defects at the Si(1 1 1)–SiO₂ interface after sub-keV Ar⁺ ion bombardment. The band bending of about 0.5 eV resembles that for Si(1 0 0)–SiO₂, and both interfaces exhibit two kinetic regimes for the evolution of band bending upon annealing due to defects healing. The healing takes place about an order of magnitude more quickly at the (1 1 1) interface, however, probably because of less fully saturated bonding and higher compressive stress.     

声弛豫过程影响下的气体平衡态热容合成方法及其在气体检测中的应用

声扰动形成的分子振动弛豫过程使得气体热容成为依赖于声频率的有效热容,导致随频率变化的声速频散和声弛豫吸收。本文基于单弛豫过程合成算法,提出一种基于两频点声速和声吸收测量值的气体平衡态热容合成方法。该方法两个测量声频点只需在声弛豫吸收显著的频率范围即可分别合成可激发气体分子内外自由度热容,并有效消除声弛豫过程对气体平衡态热容测量结果的影响。对于室温下由CO₂、CH₄、Cl₂、N₂和O₂组成的多种气体,合成的气体热容值与基于Planck-Einstein公式的热力学理论计算结果相符,相比实验数据最大相对误差为3.51%。合成的转动和振动热容还可应用于气体分子几何结构、振动频率大小和混合气体摩尔分数的检测。      

利用溶胶-凝胶法调节pH及添加PEG优化酒精纯化用SiO_2粉末(英文)

该工作探讨利用TEOS前驱液及不同含量、不同分子量PEG制备出SiO2粉末的性质.SiO2粉末由溶胶-凝胶法制备,并结合退火前后烘干.TEOS前驱溶液的水解及缩合反应速率在pH=3时比在pH=5,7,9时进行得更彻底,且随温度及PEG分子量的升高而升高;粉末产率在TEOS前驱液pH=3时达到最大.与不加PEG的溶胶-凝胶法制备出的样品相比,加入PEG制备的粉末有更高的吸水能力.若粉末从高至500℃退火,则可发现乙醇浓度增加.依据液体和固体NMR、电子显微镜以及BET结果,对吸水及粉末表面积之间的关系进行了讨论.     

Tetrakis(diethylamido) titanium (TDEAT) interactions with SiO2 and Cu substrates

X-ray photoelectron spectroscopy (XPS) is used to characterize the chemical interactions of tetrakis(diethylamido) titanium (TDEAT) with SiO₂ and Cu surfaces under ultrahigh vacuum (UHV) conditions. XPS studies show that TDEAT dissociatively chemisorbs on SiO₂ at room temperature or above, resulting in Ti---N bond scission, and Ti---O bond formation. No Ti carbide or Si carbide formation is observed. In the presence of co-adsorbed NH₃, Ti---N bond formation is enhanced and is stable at temperature up to 900 K in UHV. Continuous exposures of TDEAT on SiO₂ at 500 K produce both Ti oxides and nitride formation. The presence of an overpressure of NH₃ enhances Ti nitride formation. In contrast, TDEAT physisorbed on Cu at 120 K and annealed to 500 K results in desorption of Ti-containing species from the surface. Successive exposures of TDEAT on Cu at 500 K yield a Ti-alkyl reaction product. The presence of NH₃ does not significantly alter TDEAT interaction with Cu.     

Substrate temperature dependence of the photoluminescence efficiency of co-sputtered Si/SiO2 layers

Si particles embedded in an SiO₂ matrix were obtained by co-sputtering of Si and SiO₂ at various deposition temperatures T_d (200–700°C) and annealing at different temperatures T_a (900–1100°C). The systems were characterized by X-ray photoelectron, Raman scattering, infrared absorption and photoluminescence spectroscopy techniques. The results show that the photoluminescence efficiency is strongly dependent on the degree of phase separation between the Si nanocrystals and the SiO₂ matrix. This is likely connected with the Si/SiO₂ interface characteristics, together with the features indicating the involvement of quantum confinement.     

Annealing effects on structure and laser-induced damage threshold of Ta2O5/SiO2 dielectric mirrors

The effects of annealing on structure and laser-induced damage threshold (LIDT) of Ta₂O₅/SiO₂ dielectric mirrors were investigated. Ta₂O₅/SiO₂ multilayer was prepared by ion beam sputtering (IBS), then annealed in air under the temperature from 100 to 400 °C. Microstructure of the samples was characterized by X-ray diffraction (XRD). Absorption of the multilayer was measured by surface thermal lensing (STL) technique. The laser-induced damage threshold was assessed using 1064 nm free pulsed laser at a pulse length of 220 μs.

It was found that the center wavelength shifted to long wavelength gradually as the annealing temperature increased, and kept its non-crystalline structure even after annealing. The absorbance of the reflectors decreased after annealing. A remarkable increase of the laser-induced damage threshold was found when the annealing temperature was above 250 °C.     

Latent track creation in fused silica by 200 MeV silver beam

Studies of formation of latent tracks in swift heavy ion irradiated SiO₂ are presented. Fused silica (SiO₂) were irradiated with 200 MeV silver (Ag) ion beam at varying fluences. Radiation-induced effects were studied by ultraviolet(UV)/Visible optical absorption spectroscopy and transmission electron microscopy (TEM). UV/Visible absorption study indicated E′ centers and oxygen deficiency centers having characteristic absorption occurred at 5 eV. The density of these color centers calculated from the absorption peak intensity showed Poisson-type variation with irradiation fluence. The defects are thus entirely confined to the latent tracks created by swift heavy ions in SiO₂. The track radius estimated from optical absorption study was found to be 5.1 nm. Similar results were obtained from TEM studies of the irradiated samples.