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1.
Pd-Y合金膜的MOCVD研制   总被引:4,自引:0,他引:4  
采用金属有机化合物的化学气相淀积法,以β-二酮螯合物为源物质,在多孔Al2O3衬底上成功制备了超薄钯钇合金膜.用Pd(AcAc)2+Y(AcAc)3混合源制备的钯钇合金膜的晶粒尺寸(21nm×10nm)比单独用Pd(AcAc)2制备的钯膜的尺寸(30nm×10nm)小.XPS研究发现,制备的Pd-Y合金膜中Y/Pd比小于源物质的.氢的透气性实验表明,合金膜的氢渗透率高于Pd膜,且在200~350℃范围内渗透率稳定.  相似文献   

2.
PCVD法制备ZrO~2和YSZ薄膜   总被引:7,自引:0,他引:7  
以金属β-二酮类有机螯合物Zr(DPM)~4和Y(DPM)~3为挥发性源物质, 采用微波等离子体化学气相淀积法于较低的温度下(420~560℃)成功地在多孔α-Al~2O~3陶瓷,非晶玻璃等衬底上制备出致密的ZrO~2和YSZ薄膜材料.XRD分析结果表明,纯ZrO~2薄膜中除了单斜相外还存在着亚稳态的四方相.当掺入的Y~2O~3 摩尔百分含量大于或等于7%时,ZrO~2完全被稳定成立方相.SEM观察表明, 在等离子体内的不同区域中生成的薄膜形貌有所不同.XPS检测了YSZ薄膜中Zr3d~5~/~2和Zr3d~3~/~2 的电子结合能,发现较ZrO~2的标准值低0.7eV.由TEM观察和由XRD衍射峰半宽度计算, 所制备的ZrO~2和YSZ薄膜中微晶粒径在10nm左右  相似文献   

3.
二(四氢糠基茚)稀土氯化物的合成及晶体结构   总被引:2,自引:0,他引:2  
将四氢糠基茚锂分别与无水三氯化钇和无水三氯化钆以摩尔比2;1反应,除去不溶物和溶剂后,将产物在甲苯/THF中冷冻得到晶体(C4H7OCH2C9H6)2LnCl[Ln=Y(1);Ln=Gd(2)].这两种配合物都是单分子无溶剂化合物,在空气中稳定.配合物1和2的晶体结构都属于正交晶系,P212121空间群,晶胞参数分别为a=1.04252(9)nm,b=1.47455(12)nm,c=1.49799(13)nm,Z=4,Dc=1.508g/cm3;a=1.03701(10)nm,b=1.47233(12)nm,c=1.51354(14)nm,Z=4,Dc=1.699g/cm3.它们的结构相似,但空间构象不同.稀土中心离子分别与两个茚中的五元环和两个氧原子及氯原子成键,形成九配位结构.  相似文献   

4.
在严格的无水无氧条件下无水NdCl3和SmCl2与Na2(C5H4SiMe2)2O以1:1摩尔比在四氢呋喃溶液中反应,得标题配合物[O(Me2SiC5H4)2Ln(μ-Cl)(THF)]2[Ln=Nd(1),Sm(2)].元素分析证明配合物1和2的组成.X射线衍射分析证明1和2是通过氯原子桥联的二聚体结构.  相似文献   

5.
合成了4个新型NiBDT配位化合物,BDT为具有9个S原子的杂戊烯.元素分析、IR谱、UV谱确定这4个新配合物的化学式分别为[(CH3)4N]2[Ni(C5S9)2](1),[(C2H5)4N]2·[Ni(C5S9)2](2),[(C4H9)4N]2[Ni(C5S9)2](3),[(C6H5)(CH3)3N]2[Ni(C5S9)2](4).采用Ito法对配合物1的X射线粉末图进行了指标化,确定该晶体属单斜晶系,简单晶格,晶胞参数:a=0.680nm,b=0.714nm,c=2.302nm,γ=111.4°,Z=2.  相似文献   

6.
四甲基双硅桥联环戊二烯基钠与无水三氯化稀土在THF溶剂中反应合成了标题配合物Me4Si2(C5H4)2LnCl[Ln:3Nd,4Sm,5Gd,6Y]和配合物Me4Si2(C5H4):Ln(C5H5)(THF)n[Ln:1La,n=1;2Pr,n=0].通过元素分析、1HNMR、13CNMR和MS确证了配合物的结构,在THF溶液中重结晶获得配合物4的单晶,x射线衍射证明晶体结构为二聚体,4为单斜晶系,空间群为P21/c,晶体学数据a=1.2982(3)nm,b=1.2269(3)nm,c=1.3681(2)nm,β=96.79(2)°,V=2.162(1)nm3,Z=2,Dx=1.53g/cm3,偏差因子R=0.068.  相似文献   

7.
于220℃水热晶化下制备了高结晶度的γ-ZrP,合成了3种γ-苄基膦酸-磷酸锆层状化合物Zr(PO4).(H2PO4)0.15(C6H5CH2PO3H)0.85·0.4H2O(1,d=1.86nm),Zr(PO4)(H2PO4)0.30(C6H5CH2PO3H)0.70·0.6H2O(2,d=1.78nm)和Zr(PO4)(H2PO4)0.50(C6H5CH2PO3H)0.50·0.7H2O(3,d=1.66nm).用X射线粉末衍射和31P固态核磁共振等手段表征其结构,并研究了其与α-苯乙胺的插层性能.  相似文献   

8.
设计合成了2个一维链状铬酸根桥连的配位聚合物(NH4)2[Cu(NH3)2(CrO4)2](1)和(NH4)2·[Ni(NH3)2(CrO4)2](2), 并对其进行了X射线单晶结构分析、 热重-差热分析和多种磁学测试. 晶体结构分析表明, 2个配合物的晶体均属于三斜晶系, 空间群均为P1. 配合物1的晶胞参数为: a=0.59090(12)nm, b=0.6929(3) nm, c=0.73740(15) nm, α=107.03(4)°, β=92.79(3)°, γ=112.44(2)°; 配合物2的晶胞参数为: a=0.56987(7)nm, b=0.69972(9) nm, c=0.73335(8)nm, α=104.929(3)°, β=96.121(3)°, γ=112.325(4)°. 热重分析结果表明, 配合物1和2均在150 ℃左右开始分解, 生成H2Cr2CuO5和H2Cr2NiO5, 在410 ℃以上继续分解, 脱水得到相应的氧化物. 配合物的变温磁化率测试结果表明, 相邻Cu(Ⅱ)离子(配合物1)或Ni(Ⅱ)离子(配合物2)之间存在较弱的反铁磁相互作用; 低温变场和交流磁化率测试结果表明, 2个配合物均为反铁磁体.  相似文献   

9.
室温下合成了硫酸根和碳酸根桥联的双核铁()配合物{2[(TPA)2Fe2O(SO4)](ClO4)2·1.5H2O(1),[(TPA)2Fe2O(CO3)](ClO4)2·CH3OH(2)},并用X射线衍射测定了其晶体结构.结果表明,配合物1为单斜晶系,空间群为P21/c,a=1.150(2)nm,b=2.659(5)nm,c=2.933(5)nm,β=99.40(3)°,R=0.0564,wR=0.1106.配合物2为单斜晶系,空间群为P21/c,a=1.1368(3)nm,b=1.8280(5)nm,c=2.0542(5)nm,β=94.867(5)°,R=0.0567,wR=0.1362.研究了室温下的紫外-可见光谱性质.  相似文献   

10.
合成了一种新的双核稀土配合物[REL3(phen)]2(RE=La,Ce,Pr,Nd,Sm,Eu,L=反式CH3CHC(CH3)COO-,phen=phenanthroline),并且用红外光谱、紫外光谱、核磁共振谱和元素分析等进行了表征,其中测定了[LaL3phen]2的晶体结构.晶体属单斜晶系,P21/n空间群,Z=2,晶胞参数a=1.2962(4)nm,b=1.3283(4)nm,c=1.5485(5)nm,β=95.45(2)°,最终偏差因子R=0.033,RW=0.040.配合物分子为一个中心对称的双核分子,镧离子由两个双齿羧基和两个μ2-O羧基桥联,La…La*距离为0.4094nm.中心离子为九配位,形成畸变的三帽三棱柱配位多面体.La-O和La-N的键长范围分别为0.2460~0.2756nm和0.2718~0.2760nm.  相似文献   

11.
采用光辅助金属有机物化学气相沉积(MOCVD)法,在生长有CeO2/YSZ/Y2O3(YSZ为Y稳定的ZrO2)缓冲层的双轴取向Ni衬底上进行了YBa2Cu3O7-x(YBCO)外延膜生长,并与LaAlO3(100)[LAO(100)]单晶衬底上的YBCO外延膜生长进行了对比.发现在Ni衬底上c轴取向YBCO外延膜的生长温度比LAO衬底上的生长温度低约30℃,但生长速度更快.经分析认为,这种差别主要是由于Ni衬底的热导率比LAO衬底高造成的.Ni衬底及LAO衬底上生长的c轴取向YBCO外延膜的超导极限电流密度(Jc)分别约为0.5 MA/cm2及1.8 MA/cm2.  相似文献   

12.
The oxygen ion conductivity of YSZ (ZrO(2) + 9.5 mol% Y(2)O(3))/Y(2)O(3) multilayer systems is measured parallel to the interfaces as a function of temperature between 350 and 700 degrees C. The multilayer samples are prepared by pulsed laser deposition (PLD). The film thicknesses, the crystallinity, the texture and the microstructure are investigated by SEM, XRD, HRTEM and SAED. To separate the interface contribution of the total conductivity from the bulk contribution the thickness of the YSZ and Y(2)O(3) layers is varied systematically. The total conductivity of the YSZ films increases when their thickness is decreased from 0.53 microm to 24 nm. It depends linearly on the reciprocal thickness of the individual layers, thus on the number of YSZ/Y(2)O(3) interfaces. This behaviour results from the parallel connection between individual conduction paths in the bulk and the interfacial regions. The activation energy for the ionic conductivity decreases from 1.13 to 0.99 kJ mol(-1) by decreasing the thicknesses of the individual YSZ layers. HRTEM studies show that the YSZ/Y(2)O(3) interfaces are semicoherent. The correlation between interface structure and ionic conduction is discussed.  相似文献   

13.
Multilayer samples of the type (YSZ|Sc2O3) × n with layer thicknesses between 8 nm (n=100) and 250 nm (n=5) were prepared on (0001) sapphire substrates by pulsed laser deposition (PLD). The samples were characterised using X-ray diffraction (XRD), scanning electron microscopy (HRSEM) and transmission electron microscopy (TEM/HRTEM, SAED (selected-area electron diffraction) and quantitative EELS (electron energy-loss spectroscopy)). The polycrystalline layers show a columnar microstructure, which is typical for the used preparation technique. The layers are highly textured and only one axial orientation relation is found between yttria-stabilised zirconia (YSZ), scandium oxide and the substrate: (0001) Al2O3‖(111) Sc2O3‖(111) YSZ. A preferred orientation relationship also exists for the azimuthal rotation of the crystallites, which was demonstrated by SAED, XRD pole figure measurements and fast Fourier transformation (FFT) of HRTEM micrographs. The interfaces between YSZ, Sc2O3 and the substrate are sharp and do not contain diffuse transition regions. Dislocations appear not to be arranged in regular arrays. With increasing interface density (thinner individual layers in the multilayer), the conductivity of the multilayers decreases. We relate this to the negative nominal misfit present at the YSZ|Sc2O3 interfaces (compressive stress in YSZ at the phase boundaries). This observation agrees well with the previously investigated case of YSZ|Y2O3 (A. Peters et al., Phys. Chem. Chem. Phys., 2008, 10, 4623), where tensile misfit strain was present in YSZ at the phase boundaries, leading to a conductivity increase.  相似文献   

14.
高折射率高透明性半脂环聚酰亚胺的合成与性能   总被引:1,自引:0,他引:1  
采用脂环二酐单体2,3,5-三羧基环戊烷基乙酸二酐(TCAAH)分别与两种含硫芳香族二胺单体,4,4′-双(4-氨基苯硫基)二苯硫醚(3SDA)与2,7-双(4-氨基苯硫基)噻蒽(APTT)通过两步法制备了两种半脂环聚酰亚胺(PI).制备的PI薄膜在可见光波长范围内(400~700 nm)具有优良的透明性,400 nm处的透过率超过85%.此外,该系列薄膜还具有良好的耐热稳定性,氮气中的起始热分解温度超过480℃,玻璃化转变温度超过250℃.PI薄膜在632.8 nm处的折射率大于1.68,双折射小于0.006.为了进一步提高PI薄膜的折射率,初步考察了PI前体溶液聚酰胺酸(PAA)与高折射率无机TiO2纳米粒子的复合工艺.结果表明,PI-TiO2薄膜同样具有良好的透明性,632.8 nm处的折射率达到1.76.  相似文献   

15.
Y2O3 nanoparticulate thin films have been prepared using an emulsion liquid membrane (water-in-oil-in-water (W/O/W) emulsion) system, consisting of Span 83 (sorbitan sesquioleate) as a surfactant and VA-10 (2-methyl-2-ethylheptanoic acid) as an extractant (cation carrier). Yttrium ions were extracted from the external water phase and stripped into the internal water phase to make precursor oxalate nanoparticles. Y2O3 nanoparticulate thin film was prepared by casting the W/O emulsion, separated from the external phase and containing the Y oxalate nanoparticles, on a Si substrate, followed by calcination in air. Well-arranged thin-layer nanoparticulate film, consisting of Y2O3 nanoparticles smaller than 20 nm, was obtained via spin coating of the W/O emulsion. A multilayer nanoparticulate thin film was also fabricated via a simple procedure of repeated coating and subsequent calcination.  相似文献   

16.
用俄歇能谱仪对比研究了添加0.2%Y对高硅不锈钢在93%H2SO4介质中所形成的钝化膜中各元素浓度分布的影响,添加0.2%Y增大了SiO2在不锈钢钝化膜中的比例,从而使合金中Si可充分形成富SiO2的钝化膜。  相似文献   

17.
改性Ag/α-Al_2O_3催化丙烯气相环氧化反应   总被引:1,自引:0,他引:1  
制备了以分子氧为氧化剂,对丙烯气相环氧化具有较好催化性能的改性负载银催化剂,并利用氧气程序升温脱附(O2-TPD)技术研究了氧在其表面上的脱附行为.实验结果表明:Ag/α-Al2O3催化剂只能使丙烯完全氧化成二氧化碳和水;当该催化剂用K2O改性后,可获得少量的环氧丙烷;Y2O3改性的Ag/α-Al2O3催化剂,可获得极少量的丙醛和丙酮;将0.1%(w)Y2O3添加到Ag-K2O/α-Al2O3后,可以显著提高催化剂的丙烯环氧化性能.在0.1MPa、245℃、20%C3H6/8%O2/72%N2和气体空速2000h-1的反应条件下,通过20%(w)Ag-0.1%Y2O3-0.1%K2O/α-Al2O3催化剂时,丙烯转化率为4.0%,环氧丙烷的选择性为46.8%.O2-TPD研究表明,少量的Y2O3、K2O或Y2O3-K2O作为助剂添加到20%Ag/α-Al2O3催化剂中时,减少了高温区与丙烯完全氧化有关的吸附氧物种的量,低温区余下的吸附氧物种量不变,有利于丙烯环氧化反应,提高了环氧丙烷的选择性.  相似文献   

18.
We present an atomistic simulation study on the size dependence of dopant distribution and the influence of nanoscale film thickness on carrier transport properties of the model oxide-ion conductor yttria stabilized zirconia (YSZ). Simulated amorphization and recrystallization approach was utilized to generate YSZ films with varying thicknesses (3-9 nm) on insulating MgO substrates. The atomic trajectories generated in the molecular dynamics simulations are used to study the structural evolution of the YSZ thin films and correlate the resulting microstructure with ionic transport properties at the nanoscale. The interfacial conductivity increases by 2 orders of magnitude as the YSZ film size decreases from 9 to 3 nm owing to a decrease in activation energy barrier from 0.54 to 0.35 eV in the 1200-2000 K temperature range. Analysis of dopant distribution indicates surface enrichment, the extent of which depends on the film thickness. The mechanisms of oxygen conductivity for the various film thicknesses at the nanoscale are discussed in detail and comparisons with experimental and other modeling studies are presented where possible. The study offers insights into mesoscopic ion conduction mechanisms in low-dimensional solid oxide electrolytes.  相似文献   

19.
Single-phase delafossite CuAlO2 thin films are deposited successfully on Al2O3 (001) and YSZ (100) substrates using the chemical solution method. X-ray diffraction data present that the CuAlO2 film on the Al2O3 (001) substrate is epitaxial, whereas that on YSZ (100) is c-axis oriented; the same is also demonstrated by the HRTEM images and SAED patterns. Optical transmittance spectra exhibit that both films have high transparency in the visible region. However, in this region, the optical transmittance of the CuAlO2 thin film deposited on (001) Al2O3 is inferior to that deposited on (100) YSZ. This optical anomaly can be attributed to surface scattering. Electrical transport measurements show that the resistivity of the film on (001) Al2O3 is one order lower than that on (100) YSZ, suggesting that in-plane orientation is significant in improving hole mobility.  相似文献   

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