Photoluminescence and the structure of heterointerfaces of (311)A-and (311)B-oriented GaAs/AlAs superlattices

GaAs/AlAs superlattices grown simultaneously on GaAs substrates with the (311)A and (311)B orientations have been studied by photoluminescence and high-resolution transmission electron microscopy with a Fourier analysis of images. A periodic interface corrugation is observed for (311)B superlattices. A comparison of the structure of (311)A and (311)B superlattices indicates that the corrugation occurs in both cases and its period along the $[01\overline 1 ]$ direction is equal to 3.2 nm. The corrugation is less pronounced in (311)B superlattices, wherein it exhibits an additional modulation (long-wavelength disorder) with the characteristic lateral size exceeding 10 nm. The vertical correlation of regions rich in GaAs and AlAs, which is well observed in (311)A superlattices, is weak in (311)B superlattices due to the occurrence of long-wavelength disorder. The optical properties of (311)B superlattices are similar to those of (100) ones and differ radically from those of (311)A superlattices. As distinct from (311)B, strong photoluminescence polarization anisotropy is observed for (311)A superlattices. It is shown that it is the interface corrugation rather than the crystallographic (311) surface orientation that determines the optical properties of (311)A corrugated superlattices with thin GaAs and AlAs layers.     

利用TCD法研究非周期超晶格薄膜系统光透率

透明元抽杀方法通过对透明组元抽杀从而简化了非周期序列,不必进行复杂的计算就可以得出一维非周期超晶格薄膜系统光透率的主要特性。采用TCD方法研究了B类广义Thue-Morse[FBGTM（m）]非周期超晶格薄膜系统的光透射性质,直接得到了在中心波长处的光透射系数,所得结果和以前发表的结果完全一致。     

Active mode-coupling phenomena in pulsed and continuous lasers

An optical modulator inside a laser cavity, if driven at the cavity c/2L frequency or a harmonic, will produce a variety of mode-coupled short-pulse and FM-laser phenomena. This paper reviews the kinds of CW and transient mode-coupling phenomena hat can occur in CW lasers and in selected lower-power pulsed lasers using either an active optical modulator or in some cases passive saturable absorbers.     

Nano structure of low crystallinity carbon materials analyzed by using high energy X-ray diffraction

In this study, we tried to characterize a kind of low crystallinity carbon materials. The structure of polyparaphenylene(PPP)-based carbon was analyzed by means of high energy X-ray diffraction using the apparatus of SPring-8. The experimental results revealed the existence of basic structural units (BSU) in the highly disordered materials like PPP-based carbon. It is thought that the PPP-based carbons consist of small turbostratic particles, which have a few piled up poly-aromatic layers. The structure of the PPP-based carbon which seemed to be amorphous was estimated to have hexagonal carbon layers with the size of up to 1 nm. The pores in the PPP-based carbon seem to be clearances formed among the BSUs and amorphous carbon. The pore size of PPP-based carbon was estimated from the result of N₂ absorption measurement. The experimental results suggested that the lithium ion charge mechanism in the PPP-based carbon differs from that in graphite.      

Mechanisms of self-organization of Ge/Si(0 0 1) quantum dots

The effect of vertical ordering in superlattices of self-assembled Ge/Si(0 0 1) quantum dots was investigated by a combination of structural and optical characterizations via in situ reflection high-energy electron diffraction, transmission electron microscopy, atomic force microscopy and photoluminescence spectroscopy. We show that the vertical ordering observed in quantum-dot superlattices is characterized not only by the alignment of islands along the growth direction but also by a reduction of the critical thickness. The better the vertical ordering is, the more pronounced the reduction of the critical thickness will be. Such an evolution of the critical thickness could be explained by elastic strain fields induced by buried islands and propagated through the spacer layers. An important result issued from this work is the realization of superlattices in which dots can have equal size in all layers. On the other hand, experiments performed on the transformation of the island shape versus the spacer layer thickness suggest that preferential nucleation induced by surface roughness may be the main mechanism responsible for the vertical ordering observed in quantum-dot superlattices.     

EFFECTIVE-MASS THEORY FOR InAs/GaAs STRAINED SUPERLATTICES

By using the recently developed exact effective-mass envelope function theory, the electronic structures of InAs/GaAs strained superlattices grown on GaAs (100) oriented substrates are studied. The electron and hole subband structures, distribution of electrons and holes along the growth direction, optical transition matrix elements, exciton states, and absorption spectra are calculated. In our calculations, the effects due to the different effective masses of electrons and holes in different materials and the strain are included. Our theoretical results are in agreement with the available experimental data.     

Software support of the technology of substrates for multilayer interference structures

A computer-aided machining (CAM) system for nanoscale polishing of cylindrical optical elements with a flat, parabolic, elliptic, or table-defined generatrix we developed is described. This system is one of the key components of the fabrication of templates for producing substrates of 2D optical systems based on multilayer interference structures. The field of application of this software can be easily extended to production of various 3D surfaces.     

用光波导方法测量Ⅱ—Ⅵ族半导体的光学非线性和光学双稳

本文报道利用光波导方法在ＧａＡｓ衬底上制备的Ⅱ－Ⅵ族半导体单晶薄膜和超晶格中所观测到的光学吸收,光学非线性和瞬态光学双稳的实验结果。     

Transmission resonances in magnetic-barrier structures

Quantum transport properties of electrons in simple magnetic-barrier (MB) structures and in finite MB superlattices are investigated in detail. It is shown that there exists a transition of transmission resonances, i.e., from incomplete transmission resonances in simple MB structures consisting of unidentical blocks, to complete transmission resonances in comparatively complex MB structures (, n is the number of barriers). In simple unidentical block arrangements in double- and triple-MB structures we can also obtain complete transmission by properly adjusting parameters of the building blocks according to k_y-value (k_y is the wave vector in y direction). Strong suppression of the transmission and of the conductance is found in MB superlattices which are periodic arrangements of two different blocks. The resonance splitting effect in finite MB superlattices is examined. It is confirmed that the rule (i.e., for n-barrier tunneling the splitting would be (n-1)-fold) obtained in periodic electric superlattices can be extended to periodically arranged MB superlattices of identical blocks through which electrons with tunnel, and it is no longer proper for electrons with k _y <0 to tunnel. Received: 18 August 1997 / Revised: 20 September 1997 / Accepted: 13 October 1997     

Optical properties of antiferromagnetic/ion-crystal superlattices

Transmission, refraction and absorption properties of an antiferromagnetic/ion-crystal superlattice are investigated. The transmission spectra based on FeF₂/TlBr superlattices reveal that there exist two intriguing guided modes in a wide stop band. Additionally, FeF₂/TlBr superlattices possess either the negative refraction or the quasi left-handedness, or even simultaneously hold them at certain frequencies of two guided modes, which require both negative magnetic permeability of antiferromagnetic layers and negative permittivity of ion-crystal layers. Frequency regimes of the guided modes will be dependent on the magnitude of the external magnetic field. Therefore, handedness and refraction properties of the system can be manipulated by modifying the external magnetic field. Absorption spectra exhibit that absorption corresponding to guided modes is noticeable.     

Infrared spectroscopy of intraband transitions in Ge/Si quantum dot superlattices

We report the study of infrared spectroscopy of intraband transitions in Ge/Si quantum dot superlattices. The superlattices, which were grown on (001) oriented Si substrates by a solid source molecular beam epitaxy system, are composed mainly of 20 or 30 periods of Ge dot layers and Si spacer films. The structural properties of them and of the uncapped Ge dots grown on the surfaces of some of them were tested by cross-sectional transmission electron and atomic force microscopes, respectively. It is found that the Ge quantum dots have flat lens-like shapes. Infrared absorption signals peaking in the mid-infrared range were observed using Fourier transform infrared and Raman scattering spectroscopy techniques. Experimental and theoretical analysis suggests that the mid-infrared response be attributed to intraband transitions within the valence band of the Ge quantum dots in the superlattices. The fact that the intraband absorption is strongly polarized along the growth axis of the superlattices signifies that the Ge quantum dots with flat lens-like shapes perform as Ge/Si-based quantum wells. This study demonstrates the application potential of these kinds of Ge/Si quantum dot superlattices for developing mid-infrared photodetectors.     

Infrared Thermal Emission,Reflection, and Transmission of GaAs Periodic Microstructures

Experimental and theoretical study of thermal emission, transmission, and reflection from bare and coated one-dimensional (1D) and two-dimensional (2D) grating structures on GaAs substrates was carried out. Our experiments have revealed strong correlation between the spectra of thermal emission and the microstructure dimensions. The emissivity enhancement and diminution depends on the groove depth and the spectral range (below or above Rayleigh wavelength). The effects can be attributed to diverse mechanisms: emission escape due to emerging diffraction-order beams, vertical-cavity modes, enhanced optical transmission phenomenon, and electron plasma effect.     

一维有限超晶格的电子态与透射问题的转移矩阵方法研究

采用转移矩阵方法,研究了一维有限超晶格的电子态与透射问题.计算了一维有限超晶格含单个缺陷层或少量缺陷层的透射谱和波函数,以及当电子被束缚在一维有限超晶格中电子的本征值和相应的定态本征函数.给出的方法对于研究电子通过任意排列的一维有限超晶格的输运具有普适性.     

Close spaced ultra-short bound solitons from DI-NOLM Figure-8 fiber laser

Ultra-short soliton pulses of 72 fs without any pedestal and CW components are observed from Figure-8 passively mode-locked fiber laser, which is incorporated with a dispersion-imbalanced nonlinear optical loop mirror (DI-NOLM). Bound states of asymmetrical solitons with pulse width of 103 fs and separation of 585.5 fs are also observed. The bound soliton separation and pulsewidth remain unchanged even after passing through 1.2 km single mode fiber (SMF) transmission.     

ZnSe-ZnS应变超晶格的Raman散射

本文报导了Znse—ZnS应变超晶格的Raman光学声子谱.我们观测到,随着应变大小的改变,ZnSe和ZnS的纵向光学声子发生频移.ZnSe层中纵向光学声子可发生较大的蓝移,也可发生较小的红移;ZnS层中的纵向光学声子发生较大的红移.这些现象为“应变场下的光学模理论”所解释.文中还报导了在波数为110cm-1处观测到一很强的散射峰,并把它归结为超晶格表面层单斜Se所引起的散射;在其它地方还观测到非晶态Se、三角Se引起的散射峰.     

The influence of surfaces and interfaces on coherent phonons in semiconductors

Experiments have shown that ultrafast optical excitation of semiconductors can produce oscillating changes in the optical properties of the material. The frequency of the oscillations in transmission or reflection usually matches one of the phonon modes, typically theq = 0 optical mode. These oscillations are known as coherent phonons. We discuss the role of surfaces and interfaces on the coherent phonon signal. We show that: (1) the coherent phonon signal can be used as a probe of the surface depletion field and (2) multiple interfaces as in a superlattice, can drastically alter the coherent phonon spectrum: screening of the modes in the superlattices is reduced and acoustic modes can now be excited.     

Rb原子滤波器的实验研究

本文用热Rb原子进行了光学滤波的研究。将一束激光调谐到Rb原子D2线的F=1→F′=2共振吸收线上,使其泵浦Rb原子,实现原子布居极化(即将Rb原子制备到能级F=2上)。当一束信号光反向穿过该介质时,若信号光频率调谐到原子"吸收窗口"(D1线F=2→F′=2),该介质对信号光大量吸收,信号光透射率仅为0.14%;若信号光频率调谐到原子"透明窗口"(D1线F=1→F′=2),信号光透射率高于47.4%。这种极化的原子介质可以用来做光学滤波器。     

Measuring local optical properties: near-field polarimetry of photonic block copolymer morphology

Ultrahigh molecular weight polystyrene-b-polyisoprene block copolymers (BCs), noted for their photonic behavior, were imaged using transmission near-field scanning optical microscopy (NSOM) and NSOM polarimetry. Our improved scheme for polarization modulation (PM) polarimetry, which accounts for optical anisotropies of the NSOM aperture probe, enables mapping of the local diattenuation and birefringence (with separately aligned diattenuating and fast axes) in these specimens with subdiffraction limited resolution. PM-NSOM micrographs illuminate the mesoscopic optical nature of these BC specimens by resolving individual microphase domains and defect structures.     

Phase,zeros and poles of the transmission in quantum waveguides with an attached resonator and waveguide superlattices

This work reports on a study of electron transport in two-dimensionally-defined waveguide superlattices modeled by a lateral quantum waveguide with different numbers of attached quantum stubs. It is found that for the system with a single stub, the transmission amplitude exhibits pairs of zeros and poles in the complex-energy plane and the phase of the transmission coefficient drops sharply by π when the transmission passes a zero. This co-occurrence phenomenon of the transmission zero and the phase discontinuity is identical to the feature observed in a recent double-slit-like experiment by Schusteret al.[Nature385, 417 (1997)]. When two or more quantum stubs are attached to the quantum waveguide, each transmission zero seen in the single-stub structure develops into a group of zeros and the phase of the transmission coefficient shows, in correspondence to the group of zeros, a multiple-drop structure. However, not all poles of the waveguide superlattices are found to be paired with zeros and poles that are not paired with zeros are found to be located, in the complex energy plane, at the two sides of a multiple-zero region.     

GexSi1-x/Si应变层超晶格的分子束外延生长及其特性研究

在Si(100)衬底上用分子束外延在不同的温度下生长了不同组份的Ge_xSi_1-x/Si应变层超晶格。用反射式高能电子衍射、X射线双晶衍射、卢瑟福背散射、透射电子显微镜以及Raman。散射等测试方法研究了Ge_xSi_1-x/Si超晶格的生长及其结构特性。结果表明,对不同合金组份的超晶格,其最佳生长温度不同。x值小,生长温度高;反之,则要求生长温度低。对于x为0.1—0.6,在400—600℃的生长温度范围能够长成界面平整、 关键词：