Precise control over oxygen impurities in nano-crystalline silicon thin film processed with a low hydrogen dilution gas system at near room temperature

An atmosphere highly diluted with hydrogen is essential to increase the crystal fraction during formation of hydrogenated nano-crystalline (nc) or micro-crystalline (μc) silicon thin films via chemical vapor deposition (CVD). This hydrogen-rich process, however, hinders the ability for the material to find adequate use in micro-electronic devices due to contamination that results in oxygen-related problems such as donor-like doping, defect creation, or passivation. The use of neutral beam assisted chemical vapor deposition (NBaCVD), with a low hydrogen ratio (R = H₂/SiH₄) of 4, successfully deposits a highly-crystallized nc-silicon (HC nc-Si) thin film (TF) at near room temperature (<80 °C) and effectively reduces oxygen contamination by as much as 100 times when compared to conventional plasma enhanced CVD. During the formation of HC nc-Si TF via NBaCVD, energetic hydrogen atoms directly react with oxygen atoms near the surface of the nc-Si TF and remove the oxygen impurities. This is a completely different mechanism from the hydrogen-enhanced oxygen diffusion model. This technology meets the recent requirements of a high deposition rate and low temperature necessary for flexible electronics.     

Redox kinetics of NiO/YSZ for chemical-looping combustion and the effect of support on reducibility

This paper explores the reaction kinetics of NiO supported on YSZ (Yttria Stabilized Zirconia) as an oxygen carrier for chemical looping combustion. Nickel particles with size less than 1 μm mixed with YSZ nano-powders are used to prepare the solid mixture, with 45% mol of NiO. Redox reactivity and oxygen carrying capacity are measured in a laboratory scale fixed bed reactor in the temperature range 500–1000 °C with different concentrations of the reactive gasses. Samples are subjected to repeated redox cycles using synthetic air (O₂+Ar) for oxidation, and H₂/H₂O/Ar mixtures for reduction. NiO/YSZ demonstrates superb cyclic regenerability starting with the 2nd cycle, with full utilization of its oxygen carrying capacity. Compared to pure nickel, pronounced improvement is achieved in the kinetics and oxygen utilization. Full reduction is achieved, and the presence of H₂O does not affect the reduction rate. Reactivity is also determined as a function of conversion. Global models of redox conversion are developed, in which surface chemistry and solid diffusion are considered. Oxidation exhibits the characteristics of a shrinking-core model with internal reactions at the Ni/NiO interface being the rate limiting step, and it is weakly temperature dependent. Reduction with H₂ generally exhibits surface chemistry limitation (adsorption-desorption), with surface product formation being the rate limiting step. YSZ significantly enhances ionic transport during oxidation and reduction. Reaction rate dependencies on conversion during the two steps suggest an optimal range for the oxygen carrying capacity of the material.     

Formation of silicon nanodots from dysprosium-doped amorphous SiCxOy films grown by hot-filament assisted chemical vapor deposition of CH3SiH3 and Dy(DPM)3 gas jets

We report on Si nanodot formation by chemical vapor deposition (CVD) of ultrathin films and following oxidation. The film growth was carried out by hot-filament assisted CVD of CH₃SiH₃ and Dy(DPM)₃ gas jets at the substrate temperature of 600 °C. The transmission electron microscopy observation and X-ray photoelectron spectroscopy analysis indicated that ∼35 nm Dy-doped amorphous silicon oxycarbide (SiC_xO_y) films were grown on Si(1 0 0). The Dy concentration was 10-20% throughout the film. By further oxidation at 860 °C, the smooth amorphous film was changed to a rough structure composed of crystalline Si nanodots surrounded by heavily Dy-doped SiO₂.     

Surface morphology, growth rate and quality of diamond films synthesized in hot filament CVD system under various methane concentrations

Hot filament chemical vapor deposition (CVD) technique has been used to deposit diamond films on silicon substrate. In the present study, diamond films were grown at various vol.% CH₄ in H₂ from 0.5% to 3.5%, at substrate temperature and pressure of 850 °C and 80 torr, respectively. Scanning electron microscopy, X-ray diffraction and Raman spectroscopy were employed to analyze the properties of deposited films. The formation of methyl radicals as a function of vol.% CH₄ not only changes film morphology but also increase film growth rate. At low, intermediate and high vol.% CH₄, cluster, faceted cubes and pyramidal features growth, were dominant. By increasing vol.% CH₄ from 0.5% to 3.5%, as the growth rate improved from ∼0.25 μm/h to ∼2.0 μm/h. Raman studies features revealed high purity diamond films at intermediate range of vol.% CH₄ and grain density increased by increasing CH₄ concentration. The present study represents experimentally surface morphology, growth rate and quality of diamond films grown in hot filament CVD system at various CH₄ concentrations.     

Effect of oxide on carbon deposition behavior of CH4 fuel on Ni/ScSZ cermet anode in high temperature SOFCs

This work investigated the effect of oxide in Ni-zirconia cermets on the carbon deposition behavior in internal reforming SOFCs. Within 800–1000 °C, carbon deposition was found to decrease with increasing temperature on Ni/ScSZ cermet anodes at a low oxygen / carbon ratio (O / C = 0.03) during anodic oxidation of methane. On the contrary, an opposite trend was observed on Ni/YSZ under the same conditions, consisting with the temperature dependence of carbon deposition predicted by a thermodynamic equilibrium calculation. Results of temperature-programmed-reduction (TPR) of NiO mixed with YSZ or ScSZ indicated that interaction of Ni with ScSZ is stronger than that with YSZ. The stronger interaction was corroborated by observed tendency of inhibiting Ni agglomeration by both BET specific surface area analysis and SEM observation. It was also found that the dependence of CO₂ production rate monitored by GC on current density showed a similar dependence trend of the equilibrium CO₂ content on O / C ratio. A model in which H₂O_ad enrichment effects on Ni surface by anodic current depend on the interaction between Ni and the oxide in Ni cermet was proposed to explain the different carbon deposition behaviors between Ni/YSZ and Ni/ScSZ cermets.     

Temperature enhanced growth of ultralong multi-walled carbon nanotubes forest

This work demonstrates a method to synthesize ultralong multi-walled carbon nanotubes (MW-CNTs) forest with high growth rate using the three-zone temperature chemical vapor deposition (TZT-CVD). The effect of temperature difference in the TZT-CVD is to sustain the lifetime of the catalyst and hence increase the growth efficiency. By optimizing the growth variables, TZT-CVD produced MW-CNTs forest with a height up to 4.27 mm in 60 min. The CNT synthesis ratio, an ultimate figure of merit is 712 times and the carbon source consumption is 4% compared to that of single-zone temperature CVD.     

Deposition and growth kinetics studies of thin zirconium dioxide films by UVILS-CVD

We report the deposition of thin zirconium dioxide films on Si(1 0 0) by a technique of ultraviolet-assisted injection liquid source chemical vapor deposition (UVILS-CVD) by using ultraviolet with 222 nm radiation. The alkoxide zirconium(IV) tert-butoxide (Zr[OC(CH₃)₃]₄) was used as precursor while nitrous oxide was driven into the reaction chamber as an oxidizing agent. The ZrO₂ films were deposited under various conditions and characterized by ellipsometry, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction and scanning electron microscopy. The growth rate decreased with the increasing of substrate temperatures from 200 to 400 °C. Deposition rate of 20 nm/min was observed at a substrate temperature of 350 °C. There was a liner relation between the thicknesses of the films and deposition times. As a result the thicknesses can be accurately controlled by changing the number of drops of precursor introduced by the injection liquid source. The growth rate increased with the increasing concentrations of the precursor, nevertheless the trend stopped when the concentration exceeded 8.5%. The growth kinetics were also studied and the results were fit to a three-step kinetic model involving a photo chemical reaction, a reversible precursor absorption process and a following irreversible deposition reaction.     

N-methylpyrrolidine-based precursors for chemical vapor deposition of GaNx particles

An attempt to prepare a metalorganic precursor of gallium with reactivity at low temperature in chemical vapor deposition (CVD) systems was done by reacting N-methylpyrrolidine with metal gallium or gallium nitrate under mild conditions. The precursors were bubbled into a CVD assemblage and then reacted with ammonia at temperatures between 400 and 700 °C. The depositions onto silicon substrates were pyramidal particles of 100 nm width at the base and up to 55 nm in height. The rise in growth temperature increased particle density from 0.9 to 27.1 particles per square micron, but reduced the height from 50 to 10 or 2 nm. XPS spectra showed the presence of gallium and nitrogen. The intensity of the gallium spectrum decreased as the process temperature increased indicating that GaN_x particles were deposited rather than the stoichiometric gallium nitride (GaN). An additional N1s band of impurities appeared whose intensity increases with the reaction temperature. The lower impurity content corresponded to the sample prepared with Ga(NO₃)₃ at 400 °C.     

Characterization of Cd1−xFexS diluted magnetic semiconductors grown at near phase conversion temperature

Fe-based cadmium sulfide alloy thin films have been grown on c-plane sapphire substrates by a low-pressure metalorganic chemical vapor deposition technique at different growth temperatures. From X-ray diffraction and absorption spectra of the samples, the evolutions with growth temperature show an inflexion at the growth temperature of 300 ^°C. This was attributed to the phase transformation from zinc-blende to wurtzite. With increasing growth temperature from 270 ^°C to 360 ^°C, Fe concentration in the films increases monotonously. The electronic states of Cd_1−xFe_xS were investigated by X-ray photoelectron spectroscopy. Magnetic measurement shows Van Vleck paramagnetism of the Cd_1−xFe_xS thin film in the temperature region below 7 K.     

Photoactivity passivation of TiO<Subscript>2</Subscript> nanoparticles using molecular layer deposited (MLD) polymer films

Pigment-grade anatase TiO₂ particles (160 nm) were passivated using ultra-thin insulating films deposited by molecular layer deposition (MLD). Trimethylaluminum (TMA) and ethylene glycol (E.G) were used as aluminum alkoxide (alucone) precursors in the temperature range of 100–160 °C. The growth rate varied from 0.5 nm/cycle at 100 °C to 0.35 nm/cycle at 160 °C. Methylene blue oxidation tests indicated that the photoactivity of pigment-grade TiO₂ particles was quenched after 20 cycles of alucone MLD film, which was comparable to 70 cycles of Al₂O₃ film deposited by atomic layer deposition (ALD). Alucone films would decompose in the presence of water at room temperature and would form a more stable composite containing aluminum, which decreased the passivation effect on the photoactivity of TiO₂ particles.     

Synthesis of multi-walled carbon nanotubes for NH3 gas detection

It has been recently demonstrated that carbon nanotubes (CNTs) represent a new type of chemical sensor capable of detecting a small concentration of molecules such as CO, NO₂, NH₃.In this work, CNTs were synthesized by chemical vapor deposition (CVD) on the SiO₂/Si substrate by decomposition of acetylene (C₂H₂) on sputtered Ni catalyst nanoparticles. Their structural properties are studied by atomic force microscopy, high-resolution scanning electron microscopy (HRSEM) and Raman spectroscopy. The CNTs grown at 700 °C exhibit a low dispersion in size, are about 1 μm long and their average diameter varies in the range 25–60 nm as a function of the deposition time. We have shown that their diameter can be reduced either by annealing in oxygen environment or by growing at lower temperature (less than 600 °C).We developed a test device with interdigital Pt electrodes on an Al₂O₃ substrate in order to evaluate the CNTs-based gas sensor capabilities. We performed room temperature current–voltage measurements for various gas concentrations. The CNT films are found to exhibit a fast response and a high sensitivity to NH₃ gas.     

Synthesis of carbon nanotubes on Ni-alloy and Si-substrates using counterflow methane–air diffusion flames

We have conducted an experimental study to investigate the synthesis of multi-walled carbon nanotubes (CNTs) in counterflow methane–air diffusion flames, with emphasis on effects of catalyst, temperature, and the air-side strain rate of the flow on CNTs growth. The counterflow flame was formed by fuel (CH₄ or CH₄ + N₂) and air streams impinging on each other. Two types of substrates were used to deposit CNTs. Ni-alloy (60% Ni + 26% Cr + 14% Fe) wire substrates synthesized curved and entangled CNTs, which have both straight and bamboo-like structures; Si-substrates with porous anodic aluminum oxide (AAO) nanotemplates synthesized well-aligned, self-assembled CNTs. These CNTs grown inside nanopores had a uniform geometry with controllable length and diameter. The axial temperature profiles of the flow were measured by a 125 μm diameter Pt/10% Rh–Pt thermocouple with a 0.3 mm bead junction. It was found that temperature could affect not only the success of CNTs synthesis, but also the morphology of synthesized CNTs. It was also found, against previous general belief, that there was a common temperature region (1023–1073 K) in chemical vapor deposition (CVD) and counterflow diffusion flames where CNTs could be produced. CNTs synthesized in counterflow flames were significantly affected by air-side strain rate not through the residence time, but through carbon sources available for CNTs growth. Off-symmetric counterflow flames could synthesize high-quality CNTs because with this configuration carbon sources at the fuel side could easily diffuse across the stagnation surface to support CNTs growth. These results show the feasibility of using counterflow flames to synthesize CNTs for particular applications such as fabricating nanoscale electronic devices.     

BC2N薄膜的柱状生长及生长机理

应用热丝辅助等离子体化学气相沉积法(CVD)合成了表面呈柱状的BC₂N薄膜,X射线、红外及X射线电子能谱分析表明,薄膜的化学组分主要为BC₂N,B,C和N原子间互相结合成键.扫描电镜观察到,薄膜表面形貌呈排列整齐、取向一致的柱体,并且发现这种生长方式与沉积参数密切相关.最后从结合能方面讨论了柱状BC₂N的生长机理. 关键词： 2N')" href="#">BC₂N 柱状生长 CVD法     

Synthesis and characterization of GaN nanowires

In this work, GaN nanowires were fabricated on Si substrates coated with NiCl₂ thin films using chemical vapor deposition (CVD) method by evaporating Ga₂O₃ powder at 1100 °C in ammonia gas flow. X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscope (HRTEM) and photoluminescence (PL) spectrum are used to characterize the samples. The results demonstrate that the nanowires are single-crystal GaN with hexagonal wurtzite structure. The growth mechanism of GaN nanowires is also discussed.     

Effect of H2 dilution on a-CN:H films deposited by hot-wire chemical vapor deposition

Hydrogenated amorphous carbon nitride (a-CN:H) thin films were deposited by hot-wire chemical vapor deposition (HWCVD) using the gas mixture of CH₄, NH₃ and H₂ precursor gases. The structural and electronic environments studies of H₂ diluted a-CN:H films were carried out by Raman spectroscopy and X-ray photoelectron spectroscopy. The nitrogen content increases while the total carbon contents decreases with increase in H₂ flow rate from 0 sccm to 20 sccm in the a-CN:H films. Moreover, the detail analysis of the carbon core orbital, valence band and hole states of a-CN:H were discussed with different H₂ flow rate.     

SiH4/H2等离子体气相生长硅薄膜的动力学模型

在化学气相沉积微晶硅薄膜过程中,为了降低成本,必须提高生长速率,但薄膜的微观结构和光电性能则随之降低,原因是成膜先驱物在薄膜表面上的扩散长度降低了. 本文利用量子化学的反应动力学理论建立有关成膜先驱物SiH₃和H的反应平衡方程,求解薄膜生长速率和成膜先驱物的扩散长度,并找出影响生长速率与扩散长度的微观参数,发现生长速率不仅与流向衬底的SiH₃的通量密度有关,而且与H的通量密度有关;SiH₃的扩散长度与衬底温度和薄膜表面的硅氢键的形态有关,当     

In situ functionalized self-assembled monolayer surfaces for selective chemical vapor deposition of copper

Recent studies show that the self-assembled monolayer (SAM) is well suited to control the selectivity of chemical vapor deposition (CVD). Here, we reported the selective CVD for copper on the functionalized SAM surfaces (with -SH, -SS-, and -SO₃H terminal groups). The -SS- and -SO₃H terminal group surfaces were obtained through in situ chemical transformation of -SH terminal group surface of a 3-mercaptopropyltrimethoxysilane-SAM (MPTMS-SAM). As a result, the -SS- terminal group surface reduces copper deposition and the -SO₃H terminal group surface enhances copper deposition comparing to the -SH terminal group surface. In addition, the MPTMS-SAM was irradiated by UV-light through a photo mask to prepare SH-group and OH-group regions. Then, copper films were deposited only on the SH-group region of the substrate in chemical vapor deposition. Finally, patterns of copper films were formed in the way of UV-light irradiation. These results are expected for use of selective deposition of copper metallization patterns in IC manufacturing processes.     

Non-faradaic electrochemical modification of the catalytic activity for propane combustion of Pt/YSZ and Rh/YSZ catalyst-electrodes

The effect of non-faradaic electrochemical modification of catalytic activity (NEMCA effect) or electrochemical promotion (EP) was investigated in the total oxidation of propane on porous Pt and Rh catalyst-electrode films interfaced to 8 mol% Y₂O₃-stabilized-ZrO₂ (or YSZ), in the temperature range 425–520 °C and for sub-stoichiometric O₂ to propane ratios. Application of either positive or negative overpotentials resulted in non-faradaic increase of the catalytic rate, by up to a factor of 4 in the case of Rh and by up to a factor of 1350 in the case of Pt. The rate increase observed in the case of Pt is among the highest ones reported so far in NEMCA studies with oxygen ion conductors as active supports.     

Deposition of BN interphase coatings from B-trichloroborazine and its effects on the mechanical properties of SiC/SiC composites

Boron nitride thin films were deposited on silicon carbide fibers by chemical vapor deposition at atmospheric pressure from the single source precursor B-trichloroborazine (Cl₃B₃N₃H₃, TCB). The film growth and structure, as a function of deposition temperature, hydrogen gas flow rate, and deposition time, were discussed. The deposition rate reaches a maximum at 1000 °C, then decreases with the increasing of temperature, and the apparent activation energy of the reaction is 127 kJ/mol. Above 1000 °C, gas-phase nucleation determines the deposition process. The deposited BN films were characterized by Raman spectroscopy, X-ray diffraction (XRD) and scanning electron microscopy (SEM). The effect of BN interphase on the mechanical properties of the unidirectional SiC fiber-reinforced SiC matrix (SiC/SiC) composites was also investigated. The results show that the flexural strength of SiC/SiC composites with and without coating is 276 MPa and 70 MPa, respectively, which indicates that BN interphase coating deposited from B-trichloroborazine precursor can effectively adjust the fiber/matrix interface, thus causing a dramatic increase in the mechanical properties of the composites.     

MOCVD of zirconium oxide thin films: Synthesis and characterization

The synthesis of thin films of zirconia often produces tetragonal or cubic phases, which are stable at high temperatures, but that can be transformed into the monoclinic form by cooling. In the present study, we report the deposition of thin zirconium dioxide films by metalorganic chemical vapor deposition using zirconium (IV)-acetylacetonate as precursor. Colorless, porous, homogeneous and well adherent ZrO₂ thin films in the cubic phase were obtained within the temperature range going from 873 to 973 K. The deposits presented a preferential orientation towards the (1 1 1) and (2 2 0) planes as the substrate temperature was increased, and a crystal size ranging between 20 and 25 nm. The kinetics is believed to result from film growth involving the deposition and aggregation of nanosized primary particles produced during the CVD process. A mismatch between the experimental results obtained here and the thermodynamic prediction was found, which can be associated with the intrinsic nature of the nanostructured materials, which present a high density of interfaces.