H2/Pt/Ce0.9Gd0.1O1.95/Pt/O2 fuel cell operated in the intermediate temperature range 500 – 700°C

Ce_0.9Gd_0.1O_1.95 (GCO), is one of the potential candidate electrolytes for intermediate temperature Solid Oxide Fuel Cells (ITSOFC). GCO has high oxide ion conductivity in the intermediate temperature range (500 – 700 °C) compared to other Ce_1−yGd_yO_2-2/y compositions and the Gd³⁺ ion is the most appropriate dopant material compared to other rare earth materials such as Sm³⁺, Y³⁺, Zr³⁺, etc. Our results show that the fuel cell H₂/Pt/Ce_0.9Gd_0.1O_1.95/Pt/O₂ operated in the temperature range 500 – 700°C gives the maximum power densities 0.0049 W/cm² at 500 °C and 0.0126 W/cm² at 650 °C for cell voltages 0.6275 V and 0.6278 V, respectively, where the electrolyte was kept in 5% H₂ (+ Argon) for 12 hours before use in the fuel cell. Maximum power densities are 0.0038 W/cm² at 500 °C and 0.0270 W/cm² at 650 °C for cell voltages 0.5986 and 0.5913 V, respectively, where the electrolyte was kept in 2 % O₂ (+ Argon) for 12 hours before use in the fuel cell. Paper presented at the 2nd International Conference on Ionic Devices, Anna University, Chennai, India, Nov. 28–30, 2003.     

微结构对Eu掺杂Bi4Ti3O12铁电薄膜铁电性能的影响

采用金属有机物分解法在Pt/Ti/Si(111)基底上制备了退火温度分别为600℃,650℃,700℃的Bi_3.15Eu_0.85Ti₃O₁₂(BET)铁电薄膜,并对其结构及铁电性能进行了测试,再使用扫描探针显微镜对BET薄膜的电畴翻转进行了实时观测.BET薄膜c畴发生180°畴变的最小电压为+6V,而r畴由于其高四方性,即使极化电压增至+12V也不会发生翻转.薄膜的铁电性主要源于c畴的极化,随着退火温度的升高,c畴的区域面积增加,BET薄膜的剩余极化强度随之增大.退火温度为700℃的BET薄膜剩余极化强度达到84μC/cm². 关键词： 铁电薄膜 电畴翻转 扫描探针显微镜     

Effect of annealing treatment on the uniformity of CeO2/TiO2 bilayer resistive switching memory devices

Bilayer CeO₂/TiO₂ films with high-k dielectric property were prepared by rf magnetron sputtering technique at room temperature. Effect of annealing treatment on resistive switching (RS) properties of bilayer CeO₂/TiO₂ films in O₂ ambient at different temperature in the range of 350–550 °C was investigated. Our results revealed that the bilayer films had good interfacial property at 500 °C and this annealing temperature is optimum for different RS characteristics. Results showed that bilayer CeO₂/TiO₂ film perform better uniformity and reliability in resistive switching at intermediate temperature (i.e. 450 °C and 500 °C) instead of low and high annealing temperature (i.e. 350 °C and 550 °C) at which it exhibits poor crystalline structure with more amorphous background. Less Gibbs free energy of TiO₂ as compared to CeO₂ results in an easier re-oxidation of the filament through the oxygen exchange with TaN electrode. However, the excellent endurance property (>2500 cycles), data retentions (10⁵ s) and good cycle-to-cycle uniformity is observed only in 500 °C annealed devices. The plots of cumulative probability, essential memory parameter, show a good distribution of Set/Reset voltage.     

Solid state photoelectrochemical cells utilising graphite thin films counter electrode

This paper reports the use of graphite thin films as a counter electrode of a solid state photoelectrochemical cells of ITO/TiO₂/PVC-LiClO₄/graphite. The photoelectrochemical cells material was a screen-printed layer of titanium dioxide onto an ITO-covered glass substrate which was used as a working electrode of the device. The solid electrolyte used was PVC-LiClO₄ that was prepared by solution casting technique. The graphite films which serve as a counter electrode were prepared onto glass substrate by electron beam evaporation technique at substrate temperatures variation of 25, 50, 100, 150 and 200 °C. The dependence of sheet resistance and surface morphology of the graphite films on substrate temperature were studied. The films deposited at 25 °C shows the smoothest surface morphology and the smallest grain size. Bigger grain size, rougher surface morphology of graphite film counter electrode. The current-voltage characteristics of four devices utilising the graphite counter electrode with different substrate temperature in dark as well as under illumination of 100 mWcm⁻² light from a tungsten halogen lamp were recorded at room temperature and at 50 °C, respectively. It was found that the photovoltaic parameters of the device such as short-circuit current density, J_sc and open-circuit voltage, V_oc increases with the decreasing average grain size of the graphite counter electrode. The device whose graphite film counter electrode was deposited onto the glass substrate at 25 °C gave the highest J_sc of 0.32 μA/cm² and V_oc of 117 mV, respectively.     

Photoelectrochemical properties of texture‐controlled nanostructured α‐Fe2O3 thin films prepared by AACVD

Nanostructured α‐Fe₂O₃ thin film electrodes were deposited by aerosol‐assisted chemical vapour deposition (AACVD) for photoelectrochemical (PEC) water splitting on conducting glass substrates using 0.1 M methanolic solution of Fe(acac)₃. The XRD analysis confirmed that the films are highly crystalline α‐Fe₂O₃ and free from other iron oxide phases. The highly reproducible electrodes have an optical bandgap of ～2.15 eV and exhibit anodic photocurrent. The current–voltage characterization of the electrodes reveals that the photocurrent density strongly depended on the film morphology and deposition temperature. Scanning electron microscopy (SEM) analysis showed a change in the surface morphology with the change in deposition temperature. The films deposited at 450 °C have nanoporous structures which provide a maximum electrode/electrolyte interface. The maximum photocurrent density of 455 µA/cm² was achieved at 0.25 V vs. Ag/AgCl/3M KCl (～1.23 V vs. RHE) and the incident photon to electron conversion efficiency (IPCE) was 23.6% at 350 nm for the electrode deposited at 450 °C. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Low-temperature sintering effects on NASICON-structured LiSn<Subscript>2</Subscript>P<Subscript>3</Subscript>O<Subscript>12</Subscript> solid electrolytes prepared via citric acid-assisted sol-gel method

LiSn₂P₃O₁₂ with sodium (Na) super ionic conductor (NASICON)-type rhombohedral structure was successfully obtained at low sintering temperature, 600 °C via citric acid-assisted sol-gel method. However, when the sintering temperature increased to 650 °C, triclinic structure coexisted with the rhombohedral structure as confirmed by X-ray diffraction analysis. Conductivity–temperature dependence of all samples were studied using impedance spectroscopy in the temperature range 30 to 500 °C, and bulk, grain boundary and total conductivity increased as the temperature increased. The highest bulk conductivity found was 3.64?×?10^?5 S/cm at 500 °C for LiSn₂P₃O₁₂ sample sintered at 650 °C, and the lowest bulk activation energy at low temperature was 0.008 eV, showing that sintering temperature affect the conductivity value. The voltage stability window for LiSn₂P₃O₁₂ sample sintered at 600 °C at ambient temperature was up to 4.4 V. These results indicated the suitability of the LiSn₂P₃O₁₂ to be exploiting further for potential applications as solid electrolytes in electrochemical devices.     

Evaluation of a cobalt-free Ba0.5Sr0.5Fe0.9Nb0.1O3?δ cathode material for intermediate-temperature solid oxide fuel cells

A cobalt-free Ba_0.5Sr_0.5Fe_0.9Nb_0.1O_3??? (BSFNb) perovskite-type oxide was investigated as the cathode material for intermediate-temperature solid oxide fuel cells (IT-SOFCs) with Sm_0.2Ce_0.8O_1.9 (SDC) electrolyte. XRD results showed that BSFNb cathode was chemically compatible with the electrolyte SDC up to 1,000?°C. The maximum output of anode-supported thin-film SOFC reached 503?mW?cm^?2 at 650?°C when employing humidified H₂ as fuel and static air as oxidizer. The electrode polarization resistance was low as 0.078????cm² at 650?°C, and the activation energy of the electrode polarization resistance was 129.72?kJ?mol^?1. The experimental results indicated that the cobalt-free BSFNb was a promising cathode candidate for IT-SOFCs.     

Promising performances for a La<Subscript>0.6</Subscript>Sr<Subscript>0.4</Subscript>Co<Subscript>0.8</Subscript>Fe<Subscript>0.2</Subscript>O<Subscript>3-δ</Subscript> cathode with a dense interfacial layer at the electrode-electrolyte interface

As for the commonly studied La_0.6Sr_0.4Co_0.2Fe_0.8O_3-δ (6428), here, a very low area-specific resistance (ASR) was measured for La_0.6Sr_0.4Co_0.8Fe_0.2O_3-δ (6482) cathode deposited on a Ce_0.9Gd_0.1O_2-δ (GDC) electrolyte with addition of a thin (1 μm) dense LSCF film deposited by spin coating at the interface between the GDC electrolyte and a 40-μm-thick screen-printed electrode. The ASR ranged from 1 Ω.cm² at 500 °C, 0.11 Ω.cm² at 625 °C and value as low as 0.03 Ω.cm² at 700 °C. Impedance spectra collected in between 500 and 700 °C were carefully studied. They could all be modelled with two R//CPE in series which are likely associated to the oxygen reduction reaction itself (dissociation/adsorption/ionization) at low frequency and to the oxide ion transfer at the electrode/electrolyte interface at high frequency.     

Implantation doping of germanium with Sb,As, and P

The ions of Sb, As, and P have been implanted into germanium at energies ranging from 200 keV to 700 keV. Annealing was performed at 400°C, 550°C, and 650°C. The doping profile was determined by differentialCV-measurements. Strong outdiffusion (80%) and diffusion into the bulk material was observed after annealing. The remaining doping concentration and the diffusion constants were determined by a computer fit at 650°C. We foundD _Sb=1.8×10⁻¹³ cm²/s,D _As=9×10⁻¹⁴ cm²/s andD _P=4×10⁻¹⁴ cm²/s. Lower values of the diffusion constant were determined when the samples were covered with a SiO₂ layer.     

High-performance Zinc-Tin-Oxide thin film transistors based on environment friendly solution process

Zinc-Tin-Oxide (ZTO) thin films were fabricated using a simple and eco-friendly sol-gel method and their application in thin film transistors (TFTs) was investigated. Annealing temperature has a crucial influence on the structure and electrical properties of sol-gel ZTO thin films. The ZTO thin films annealed at 300–600?°C revealed smooth and uniform surfaces with amorphous state, in addition, a high optical transparency over 90% of the ZTO films in the visible range was obtained. The electrical performance of ZTO TFTs showed obvious dependence on annealing temperature. The ZTO TFTs annealed at 500?°C showed a high carrier mobility of 5.9?cm²/V, high on/off current ratio (I_on/off) of 10⁶-10⁷, and threshold voltage (V_th) of 1.03?V. To demonstrate the application of sol-gel ZTO films in low-power display fields, we also fabricated ZTO TFTs with a solution-processed high-permittivity (high-k) ZrTiO_x dielectric layer. The ZTO/ZrTiO_x TFTs showed high mobility of 17.9?cm²/V and I_on/off of 10⁵-10⁶?at a low operation voltage of 3?V, indicating that Indium-free ZTO thin films would be potential candidates for low cost, high performance oxide TFT devices.     

The growth temperatures dependence of optical and electrical properties of InN films

InN films grown on sapphire at different substrate temperatures from 550°C to 700°C by metalorganic chemical vapor deposition were investigated. The low-temperature GaN nucleation layer with high-temperature annealing (1100°C) was used as a buffer for main InN layer growth. X-ray diffraction and Raman scattering measurements reveal that the quality of InN films can be improved by increasing the growth temperature to 600°C. Further high substrate temperatures may promote the thermal decomposition of InN films and result in poor crystallinity and surface morphology. The photoluminescence and Hall measurements were employed to characterize the optical and electrical properties of InN films, which also indicates strong growth temperature dependence. The InN films grown at temperature of 600°C show not only a high mobility with low carrier concentration, but also a strong infrared emission band located around 0.7 eV. For a 600 nm thick InN film grown at 600°C, the Hall mobility achieves up to 938 cm²/Vs with electron concentration of 3.9 × 10¹⁸ cm⁻³. Supported by the National Basic Research Program of China (Grant No. 2006CB6049), the National Natural Science Foundation of China (Grant Nos. 6039072, 60476030 and 60421003), the Great Fund of the Ministry of Education of China (Grant No. 10416), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20050284004), and the Natural Science Foundation of Jiangsu Province of China (Grant Nos. BK2005210 and BK2006126)     

Effects of deposition temperature and post-annealing on structure and electrical properties in (La<Subscript>0.5</Subscript>Sr<Subscript>0.5</Subscript>)CoO<Subscript>3</Subscript> films grown on silicon substrate

(La_0.5Sr_0.5)CoO₃ (LSCO) thin films have been fabricated on silicon substrate by the pulsed laser deposition method. The effects of substrate temperature and post-annealing condition on the structural and electrical properties are investigated. The samples grown above 650°C are fully crystalline with perovskite structure. The film deposited at 700°C has columnar growth with electrical resistivity of about 1.99×10⁻³ Ω cm. The amorphous films grown at 500°C were post-annealed at different conditions. The sample post-annealed at 700°C and 10⁻⁴ Pa has similar microstructure with the sample in situ grown at 700°C and 25 Pa. However, the electrical resistivity of the post-annealed sample is one magnitude higher than that of the in situ grown sample because of the effect of oxygen vacancy. The temperature dependence of resistivity exhibits semiconductor-like character. It was found that post-annealing by rapid thermal process will result in film cracks due to the thermal stress. The results are referential for the applications of LSCO in microelectronic devices.     

Trap characterization for Bi4Ti3O12 thin films by thermally stimulated currents

Thermally stimulated current (TSC) measurements performed in the 100 K–400 K temperature range on Bi₄Ti₃O₁₂ (BiT) thin films annealed at 550 °C and 700 °C had revealed two trapping levels having activation energies of 0.55 eV and 0.6 eV. The total trap concentration was estimated at 10¹⁵ cm⁻³ for the samples annealed at 550 °C and 3×10¹⁵ cm⁻³ for a 700 °C annealing and the trap capture cross-section was estimated about 10⁻¹⁸ cm². From the temperature dependence of the dark current in the temperature range 20 °C–120 °C the conduction mechanism activation energy was found to be about 0.956–0.978 eV. The electrical conductivity depends not only on the sample annealing temperature but also whether the measurement is performed in vacuum or air. The results on the dark conductivity are discussed considering the influence of oxygen atoms and oxygen vacancies. Received: 28 January 1998 / Accepted: 8 January 1999 / Published online: 5 May 1999     

Effect of starting powder on screen-printed YSZ films used as electrolyte in SOFCs

Screen-printing technology was developed to fabricate dense YSZ electrolyte films onto NiO–YSZ porous anode substrates. A single fuel cell of Ni-YSZ/YSZ (31 μm)/LSM-YSZ was successfully prepared by screen-printing technology. Using humidified hydrogen as fuel and ambient air as oxidant, the fuel cell provided the maximum power densities of 0.18, 0.33, 0.58, 0.97 and 1.3 W/cm² at 650, 700, 750, 800 and 850 °C, respectively. The properties of the starting YSZ powder exerted a significant effect on the characteristics of the screen-printed YSZ electrolyte films. The aggregates of the powder could be partially broken by ball milling. The YSZ powder with a small particle size and a narrow particle size distribution helped to obtain dense YSZ films. The films prepared from the YSZ powder with high aggregates were very porous, which resulted in a low open circuit voltage, a high ohmic resistance, a high polarization resistance and thus a poor cell performance.     

Direct ammonia proton-conducting solid oxide fuel cells prepared by a modified suspension spray

A dense (BCSO) membrane was fabricated by a modified suspension spraying on porous NiO–BCSO anode support. In the process, the suspension was directly prepared by ball-milling the BaCO₃, CeO₂, and Sm₂O₃ powders in ethanol. A dense and uniform electrolyte layer in the thickness of 10 μm was successfully prepared on porous anode support by suspension spray process after co-sintering at 1,400 °C for 5 h. With (NSMO) cathode, a single cell was assembled and tested with hydrogen and ammonia as fuels, respectively. The hydrogen-fueled cell exhibits 1.01 V for open circuit voltage (OCV) and 560 mW/cm² for peak power density at 700 °C. In comparison, the cell in ammonia displays a similar performance (1.02 V for OCV and 530 mW/cm² for output), which indicates the liquid ammonia is a promising substitute for hydrogen. Moreover, the fuel cell displays good interface contacts. To sum up, ammonia-fueled solid oxide fuel cells prepared by this simple suspension spray is an alternative way to promote the commercialization.     

Reactive sputtering deposition and electrochemical characterisation of thin solid electrolyte membranes for solid oxide fuel cells

Solid oxide fuel cells directly convert the chemical energy of a fuel into electricity. To enhance the efficiency of the fuel cells, the thickness of the gastight solid electrolyte membranes should be as thin as possible. Y₂O₃-stabilised ZrO₂ (YSZ) electrolyte films were prepared by reactive sputtering deposition using Zr/Y targets in Ar/O₂ atmospheres. The films were 5 – 8 μm thin and were deposited onto anode substrates made of a NiO/YSZ composite. After deposition of a cathode with the composition La_0.65Sr_0.35MnO₃ the electrochemical properties of such a fuel cell were tested under operating conditions at temperatures between 600 °C and 850 °C. Current-voltage curves were recorded and impedance measurements were performed to calculate apparent activation energies from the fitted resistance data. The conductivity of the YSZ films varied between 4.6·10⁻⁶ S/cm and 2.2·10⁻⁵ S/cm at 400 °C and the fuel cell gave a reasonable power density of 0.4 W/cm² at 0.7 V and 790 °C using H₂ with 3 % H₂O as fuel gas. The gas compositions were varied to distinguish the electrochemical processes of the anode and cathode in the impedance spectra. Paper presented at the 8th EuroConference on Ionics, Carvoeiro, Algarve, Portugal, Sept. 16–22, 2001.     

Structural and electrochemical studies on thin film LiNi0.8Co0.2O2 by PLD for micro battery

Thin film of LiNi_0.8Co_0.2O₂ (LNCO) has been prepared by Pulsed Laser Deposition (PLD) technique at various post annealing temperatures. XRD results of LNCO thin film deposited on both Pt and Si substrates reveal relatively good crystalline nature at 500 °C which is in good agreement with the electrochemical results. ICP-AES composition analysis indicates 10 to 5% Li loss in the post annealed (400–700 °C) LNCO/Pt thin films; however the as prepared LNCO/Pt films show 17% excess of Li which are comparable with the LNCO target results. SEM analysis indicates phase separation at 600 °C and porous nature at 700–800 °C for LNCO/Pt films. Cyclic voltammetry (CV) scans of LiNi_0.8Co_0.2O₂ film post annealed at 500 °C show a pair of main cathodic and anodic peaks at 3.64 and 3.4 V, respectively with a narrow peak separation reveals good stability upon cycling. Whereas the LNCO films annealed at 600 °C and 700 °C indicate an additional anodic peak at lower potential besides a pair of major peaks which may be due to the phase separated morphology as evidenced from SEM analysis. Based on the structural and electrochemical results, a lithium-ion micro cell has been constructed with LNCO/Li_3.4V_0.6Si_0.4O₄(LVSO)/SnO configuration with the thickness of 1.535 µm and its electrochemical properties have been studied.     

Variety of LaSrMnO structures induced by growth conditions and laser irradiation

Crystallographic phase transitions in perovskite-like LaSrMnO metallic oxides are studied. The transitions are induced when internal stresses generated during film synthesis (at temperatures between 450 and 730°C) vary (decrease or increase) upon subsequent irradiation by a KrF laser emitting in the UV range. As the synthesis temperature T _s grows, the rhombohedral-to-orthorhombic phase transition occurs at 650–670°C. The resistivity is shown to be either temperature-independent, ρ(T)=const, at T<T _crit, or varies and reaches a maximum, ρ(T)=ρ_max, at the Curie temperature T _c. Optical transmission spectra taken at photon energies ℏω=0.5–2.5 eV exhibit both a high (0.8–0.9) and low (0.1–0.3) transmission coefficient t, depending on the synthesis temperature. As follows from X-ray diffraction data, the laser irradiation causes a phase transition only in LaSrMnO films grown at T _s<650°C. Phases of different size scales appear: the long-range-order orthorhombic matrix and mesoscopic-range-order rhombohedral clusters are observed in the films grown at T _s=450–550°C and the rhombohedral matrix with orthorhombic clusters, in the films grown at T _s=550–650°C.     

Capacity fading reason of LiNi0.5Mn1.5O4 with commercial electrolyte

The cycling performances of LiNi_0.5Mn_1.5O₄ (LNMO) were investigated and the reasons of capacity fading were discussed. The results show that LNMO can deliver about 115 mAh?g^?1 at 1C at different temperatures; however, it retains only 61.57 % of its initial capacity after 130th cycles at 60 °C, which is much lower than 94.46 % of LNMO at 25 °C, and the cycling performance at 1C is better than that at 0.5C. The reason of capacity fading of LNMO at 60 °C is mainly due to the lower decomposition voltage of 4.3 V with commercial electrolyte and the larger decomposition current, of which the electrolyte decomposes and interacts with active materials to lead to the larger irreversible capacity loss. While the worse cycling performance at low rate is attributed to the longer interaction time between the electrolyte with the decomposition voltage of 4.5 V and the active materials.     

Synthesis and electrical transport of SrHfO3 thin films grown on a SrTiO3 (001) substrate using a pulsed laser deposition

We report the deposition of epitaxial SrHfO₃ thin films on a SrTiO₃ (001) substrate in different substrate temperatures by using a pulsed laser deposition (PLD) method. We carried out X-ray diffraction (XRD), X-ray reflectivity (XRR), reciprocal space mapping (RSM), atomic force microscopy (AFM), resistivity, and Hall measurements to examine the crystallinity, morphology and electrical properties of these films. All films showed smooth and uniform morphology with small root mean square (RMS) roughness. While the SrHfO₃ sample grown at 750 °C is metallic, the films deposited at 600 °C, 650 °C, and 700 °C show an upturn at low temperatures. The temperature dependence of the metallic parts was analyzed based on the parallel resistor model that includes resistivity saturation. On the other hand, the low-temperature upturn was found to be well described by a weak localization mechanism. We also observed the possible emergence of non-Fermi liquid behavior when the upturn disappeared. All SrHfO₃ films have p-type charge carriers.