Excitonic effects in the recombination radiation spectra of completely filled Landau levels of two-dimensional electrons

The recombination radiation spectra of two-dimensional electrons in an asymmetrically doped GaAs/AlGaAs quantum well are investigated at different temperatures and laser-excitation energies. At low temperatures and in high magnetic fields the recombination lines of the electrons from completely filled Landau levels are split into narrow sublevels. It is shown that this fine structure of the Landau levels is due to the presence of excitonic effects in the initial and final states of the photoexcited system. It is demonstrated that the recombination process is accompanied by the excitation of intersubband and cyclotron magnetoplasma modes. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 1, 38–43 (10 January 1997)     

Electron spin resonance on a two-dimensional electron gas in a single AlAs quantum well

Direct electron spin resonance (ESR) on a high mobility two-dimensional electron gas in a single AlAs quantum well reveals an electronic g factor of 1.991 at 9.35 GHz and 1.989 at 34 GHz with a minimum linewidth of 7 G. The ESR amplitude and its temperature dependence suggest that the signal originates from the effective magnetic field caused by the spin-orbit interaction and a modulation of the electron wave vector caused by the microwave electric field. This contrasts markedly with conventional ESR that detects through the microwave magnetic field.     

Observation of plasma and magnetoplasma resonances of two-dimensional electrons in a single MgZnO/ZnO heterojunction

The magnetoluminescence of the two-dimensional electron system in a single Mg _x Zn_{1 ? x} O/ZnO hetero-junction (x = 0.02) at a temperature of 0.3 K in magnetic fields up to 14 T has been studied. The concentration of two-dimensional electrons in the structure under study has been determined from the oscillations of the luminescence intensity as a function of the magnetic field. The value thus obtained is close to the one derived from transport measurements. The resonance corresponding to plasma excitations of two-dimensional electrons has been observed using optical detection of microwave absorption. In a magnetic field, the lower branch of magnetoplasma excitations, which corresponds to the propagation of edge magnetoplasmons in a structure with nearly square geometry, has been observed and investigated.     

Anomalous dephasing of two-dimensional electrons in an AlGaAs/GaAs parabolic quantum well structure

Magnetoconductivity measurements are performed on a parabolic quantum well structure. The weak localization effect is observed at a low magnetic field for both single-subband and double-subband occupation regimes. Applying weak-localization theory, we have extracted the dephasing rate. The extracted dephasing rate increases with increasing conductivity in the small-energy-transfer regime and shows a similar trend as the electron density is increased in the large-energy-transfer regime. This is in conflict with Fermi-liquid theory, and cannot be attributed to electron–phonon scattering.     

Kinetics of indirect electron-hole recombination in a wide single quantum well in a strong electric field

The kinetics of the indirect recombination of electrons and holes in wide single quantum wells in a strong electric field has been analyzed. It has been shown that the recombination time increases exponentially up to 20 μs due to the spatial separation of oppositely charged particles. The results of a theoretical model predicting the behavior of the recombination time as a function of the applied field are in good agreement with experimental data.     

Radiative carrier recombination dependent on temperature and well width of InGaN/GaN single quantum well

Photoluminescence (PL) spectra and time-resolved PL are measured from around 10 to 300 K for the InGaN/GaN single quantum wells (SQWs) with well widths of 1.5, 2.5, 4 and 5 nm. For the SQWs with the well widths of 1.5 and 2.5 nm, the peak position of PL exhibits an S-shaped shift with increasing temperature. The radiative recombination time τ_RAD begins to increase at the temperature for the position to change from the red-shift to the blue-shift. The steep increase of τ_RAD is observed beyond the temperature from the blue-shift to the red-shift. For the SQWs with the well widths of 4 and 5 nm, the peak position of PL exhibits a monotonic red-shift. τ_RAD decreases at first and then increases with temperature. It is about 100-times longer in the low temperature region and about 10-times longer at room temperature as compared with those of the SQWs with narrower widths.     

Excitonic spectrum of an undoped quantum well in electric field

The effect of the valence band coupling on the excitonic spectrum of an undoped GaAsAl_xGa_1−xAs quantum well subjected to a normal electric field is examined. The exciton states are split because of the spin-splitting of the hole subbands. The binding energies of the (00h) and (001) excitons are noticeably increased. The transition strength of the “forbidden” (01h) exciton is enhanced both by the electric field and the strong mixing of the hole states. The binding of the 001 exciton is further increased because it exhibits a Fano-like resonance with the electron-heavy hole continuum.