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1.
A phosphate compound, BaMgP2O7 was co-doped with Eu2+ and Mn2+ for making a red-emitting phosphor. The phosphor was prepared by a solid-state reaction at high temperature. The photoluminescence properties were investigated under ultraviolet (UV) ray excitation. From a powder X-ray diffraction (XRD) analysis, the formation of single-phased BaMgP2O7 with a monoclinic structure was confirmed. In the photoluminescence spectra, the BaMgP2O7:Eu,Mn phosphor emits two distinctive colors: a blue band centered at 409 nm originating from Eu2+ and a red band at 615 nm caused by Mn2+. Also, efficient energy transfer from Eu2+ to Mn2+ in the BaMgP2O7:Eu,Mn system was verified by observing that the excitation spectra of BaMgP2O7:Eu,Mn emitted at 409 and 615 nm by Eu2+ emission and Mn2+ emission, respectively, are almost the same as that of BaMgP2O7:Eu monitored at 409 nm. The optimum concentration of Eu2+ ions in BaMgP2O7:0.015Eu excited at 309 nm wavelength is 1.5 mol%. With an increase of Mn2+ content up to 17.5 mol%, a systematic decline in the intensity of the excitation spectrum by Eu2+ and a gradual growth in the intensity of emission band by Mn2+ were observed. Accordingly, the optimum concentration of Mn2+ in BaMgP2O7:0.015Eu,Mn is 17.5 mol%. The maximum spectral overlap between emission of Eu2+ and excitation of Mn2+ is achieved in a composition of BaMgP2O7:0.015Eu,0.175Mn, resulting in considerable red-emission at 615 nm.  相似文献   

2.
The Eu2+-doped Ba3Si6O12N2 green phosphor (EuxBa3−xSi6O12N2) was synthesized by a conventional solid state reaction method. It could be efficiently excited by UV-blue light (250-470 nm) and shows a single intense broadband emission (480-580 nm). The phosphor has a concentration quenching effect at x=0.20 and a systematic red-shift in emission wavelength with increasing Eu2+ concentration. High quantum efficiency and suitable excitation range make it match well with the emission of near-UV LEDs or blue LEDs. First-principles calculations indicate that Ba3Si6O12N2:Eu2+ phosphor exhibits a direct band gap, and low band energy dispersion, leading to a high luminescence intensity. The origin of the experimental absorption peaks is clearly identified based on the analysis of the density of states (DOS) and absorption spectra. The photoluminescence properties are related to the transition between 4f levels of Eu and 5d levels of both Eu and Ba atoms. The 5d energy level of Ba plays an important role in the photoluminescence of Ba3Si6O12N2:Eu2+ phosphor. The high quantum efficiency and long-wavelength excitation are mainly attributed to the existence of Ba atoms. Our results give a new explanation of photoluminescence properties and could direct future designation of novel phosphors for white light LED.  相似文献   

3.
Photoluminescence (PL) enhancement of SrSi2O2N2:Eu and the resultant color improvement of white-light were investigated via co-doping Mn with Eu. We observed that a unique absorption of host lattice of SrSi2O2N2 and its visible band emission peaked at around ∼550 nm for SrSi2O2N2:Mn2+ in the wavelength range of 450-600 nm. This highly eye-sensitive ∼550 nm-peaked band emission of SrSi2O2N2 doped with Mn2+ happens to overlap the 535 nm-peaked band emission of SrSi2O2N2 doped with Eu2+, resulting in an intensified photoluminescence in a maximum by 355%. By combining this as-prepared Mn intensified SrSi2O2N2:Eu phosphor with blue InGaN chip, the quality of white-light was improved to 93.3% for color rendering index and 3584 K for correlated color temperature.  相似文献   

4.
Europium doped LaMgAl11O19 phosphor was prepared by the combustion method. The as-prepared and post-treated (1350 °C 10 h 5% H2+95% N2) phosphors were investigated by X-ray diffraction (XRD), Fourier transform infrared (FT-IR), scanning electron microscopy (SEM), photoluminescence (PL) and electron paramagnetic resonance (EPR) techniques. XRD patterns show that LaMgAl11O19:Eu phosphors have hexagonal structure. FT-IR spectrum exhibits absorption bands corresponding to the stretching vibration of AlO4 and AlO6. Morphological studies reveal that this phosphor has faceted plates of varying sizes and shapes. The as-prepared LaMgAl11O19:Eu phosphor consists of both Eu3+ and Eu2+ ions. The phosphor exhibits a bright blue emission at 450 nm (4f65d→4f7 transition of Eu2+). On post-treating the phosphor we are able to enhance the blue emission efficiency by 330%. The process was detected from the evolution of excitation, emission and EPR spectra and the results are discussed.  相似文献   

5.
A series of yellow-green (Sr, Ca)3B2O6:Eu phosphors have been synthesized using precursors prepared via a facile sol-gel route. The solid-solution phases crystallized to materials with the formula of Sr3−xyCaxEuyB2O6 with varied Ca2+ and Eu2+ contents. The emission peak centered at 540 nm under near-UV excitation exhibited a broad-band distribution in the range of 450-650 nm. The dependences of the luminescence intensity on the contents of Ca2+ substitution and Eu2+ dopant were also investigated. The composition in the host lattice sensitively affected the chromaticity index. Sr1.21Ca1.7Eu0.09B2O6 (SCB:0.09Eu) was shown to possess the highest intensity and broadest emission band. Calcining temperature was shown to greatly influence the luminescent properties of SCB:0.09Eu. It is concluded that SCB:0.09Eu can be used as an efficient yellow-green phosphor for white light-emitting diodes (white LEDs) applications.  相似文献   

6.
Nanosized barium aluminate materials was doped by divalent cations (Ca2+, Sr2+) and Eu2+ having nominal compositions Ba1−xMxAl12O19:Eu (M=Ca and Sr) (x=0.1-0.5), were synthesized by the combustion method. These phosphors were characterized by XRD, scanning electron microscopy-energy-dispersive spectrometry (SEM-EDS) and photoluminescence measurement. The photoluminescence characterization showed the presence of Eu ion in divalent form which gave emission bands peaking at 444 nm for the 320 nm excitation (solid-state lighting excitation), while for 254 nm it gave the same emission wavelength of low intensity (1.5 times) compared to 320 nm excitation. It was also observed that alkaline earth metal (Ca2+ and Sr2+) dopants increase the intensity of Eu2+ ion in BaAl12O19 lattice, thus this phosphor may be useful for solid-state lighting.  相似文献   

7.
The optical properties of SrSi2AlO2N3 doped with Eu2+ and Yb2+ are investigated towards their applicability in LEDs. The Eu2+-doped material shows emission in the green, peaking around 500 nm. The emission is ascribed to the 4f65d1–4f7 transition on Eu2+. In view of the too low quantum efficiency and the considerable thermal quenching of the emission at the operation temperature of high power LED (>1W/mm2) this phosphor is only suitable for application in low power LEDs. The Yb2+ emission shows an anomalously red-shifted emission compared to Eu2+, which is characterized by a larger FWHM, a larger Stokes shift and lower thermal quenching temperature. The emission is ascribed to self-trapped exciton emission. The Yb2+ activated phosphor is found to be unsuitable for the use in any phosphor-converted LEDs.  相似文献   

8.
A new orange–red Ba3P4O13:Eu3+ phosphor has been synthesized by solid-state technique, and its photoluminescence properties were investigated. X-ray powder diffraction (XRD) analysis indicates that doping Eu3+ does not change the lattice of Ba3P4O13. Field-emission scanning electron microscope (FE-SEM) images illustrate that microstructure of the phosphor consists of oval grains with average diameter of 1 μm and heavy agglomerate phenomenon. The excitation spectra indicate the phosphor can be effectively excited by near ultraviolet (NUV) light, making it attractive as conversion phosphor for LED applications. The phosphor exhibits a bright orange–red emission excited by 394 nm light. The CIE chromaticity can be varied slightly by adjusting the content of Eu3+, which is attributed to the different lattice sites occupied by Eu3+ in Ba3P4O13 host. The photoluminescence studies indicate that Ba3P4O13:Eu3+ is a potential orange–red phosphor for near-ultraviolet InGaN-based white light-emitting diodes (WLEDs).  相似文献   

9.
Eu2+-doped BaSi2O5 film phosphors on quartz substrates are fabricated by radio-frequency magnetron sputtering thermal diffusion. The BaSi2O5: Eu2+ phosphor crystals have some preferred orientations that are lattice-spacing matched with the crystallized β- SiO2 crystals, and they show pore and grain boundary-free morphology with a rod-like shape fused into the crystallized β- SiO2 crystals. The BaSi2O5: Eu2+ film phosphor has a high transparency, with a transmittance of about 30% in visible light. The BaSi2O5: Eu2+ film phosphor shows 510 nm green emission from the f–d transition of the Eu2+ ions, and in particular the best sample shows a green photoluminescence brightness of about 5% of a BaSi2O5: Eu2+ powder phosphor screen. These excellences in optical properties can be explained by less optical scattering at pores or grain boundaries, and less reflection at the continuously index-changed interface.  相似文献   

10.
The phosphor, BaMgAl10O17:Eu2+, showing a blue emission band at about 450 nm was prepared by a normal solid-state reaction using BaCO3, Al2O3, MgO and Eu2O3 as starting materials with AlF3 as a flux. The study of combined Rietveld refinement and photoluminescence spectra was carried out to determine the structural parameters, such as lattice constants, the valence state of Eu, the site preference of Mg and site fractions of Mg and Eu. The occupancies of Eu and Mg were 0.022 and 0.526, respectively. The valence state of Eu was the divalent state because there was only one broad line at about 450 nm in the photoluminescence spectrum. The site preference of Mg atoms was the tetrahedral site of Al atoms surrounded by oxygen atoms in the spinel block. Lattice parameters decreased due to the difference of two ionic radii, Eu2+(1.09 Å) and Ba2+(1.34 Å), compared with those of BaMgAl10O17.  相似文献   

11.
A phosphor-converted light-emitting diode (LED) was realized by coating BaMg2Al16O27:Eu2+·Mn2+ and (SrCaPO4)·B2O3:Eu2+·Na+ phosphors onto an n-ZnO/i-MgO/p-GaN heterojunction diode. Two emission bands at around 450 and 520 nm were observed in the phosphor-converted LED under the injection of continuous current. By analyzing the optical properties of the heterojunction diode and phosphors, it is concluded that the emission at 450 nm comes from (SrCaPO4)·B2O3:Eu2+·Na+ phosphor, while the one at 520 nm comes from BaMg2Al16O27:Eu2+·Mn2+ phosphor under the excitation of the light emitted from the n-ZnO/i-MgO/p-GaN heterojunction diode. The results reported in this paper may provide a route to ZnO-based phosphor-converted LEDs for future lighting or displaying purpose.  相似文献   

12.
The blue-emitting CaAl2B2O7:Eu2+ phosphor was prepared at 800 °C by a modified solid-state reaction. The results of X-ray powder diffraction (XRD) analysis confirmed the formation of CaAl2B2O7:Eu2+. Photoluminescence (PL) spectroscopy showed that the phosphor could be excited efficiently by UV-vis light from 250 to 410 nm, and exhibit blue emission (460 nm). The emission intensity of CaAl2B2O7:Eu2+ phosphor varies with the increase of Eu2+concentration. The mechanism of resonance-type energy transfer from Eu2+ to Eu2+ was established to be electric multipole-multipole interaction. TEM images showed that the grain size of CaAl2B2O7:Eu2+ is about 45 nm, which is in full agreement with the theoretical calculation data from the XRD patterns.  相似文献   

13.
Sr6BP5O20:Eu2+ phosphor was prepared by the solid-state reaction method under a weak reductive atmosphere and the photoluminescence properties were studied systematically. The bluish-green emission band of Sr6BP5O20:Eu2+ phosphor is peaking at 475 nm, and the excitation bands are broad with peaks at about 290 and 365 nm with a shoulder around 390 nm, respectively. By combining with Ga(In)N-based near-ultraviolet LEDs, a bluish-green LED was fabricated based on the Sr6BP5O20:Eu2+ phosphor, and a novel intense white LED was fabricated based on the bluish-green phosphor Sr6BP5O20:Eu2+ and the red phosphor (Sr,Ca)5(PO4)3Cl:Eu2+,Mn2+. When this two-phosphor white LED is operated under 20-mA forward-bias current at room temperature, the Commission Internationale de l’Eclairage(CIE) chromaticity coordinates (x,y), the correlated color temperature Tc, and the color rendering index Ra are calculated to be (0.3281,0.3071), 5687 K, and 87.3, respectively. The dependence of the bluish-green and two-phosphor white LEDs on different forward-bias currents from 5 mA to 50 mA shows a similar behavior. As the current increases, the relative intensity simultaneously increases. The CIE chromaticity coordinates (x,y) of the two-phosphor white LED tend to decrease. Consequently, the correlated color temperature Tc increases from 3800 K to 9400 K and the color rendering index Ra of the two-phosphor white LED increases from 83.4 to 91.8 simultaneously. PACS 07.60.-j; 42.70.-a; 71.55.Eq  相似文献   

14.
Rare-earth doped oxyfluoride 75SiO2:25PbF2 nano-structured phosphors for white-light-emitting diodes were synthesized by thermal treatment of precursor sol–gel derived glasses. Room temperature luminescence features of Eu3+, Sm3+, Tb3+, Eu3+/Tb3+, and Sm3+/Tb3+ ions incorporated into low-phonon-energy PbF2 nanocrystals dispersed in the aluminosilicate glass matrix and excited with UV light emitting diode were investigated. The luminescence spectra exhibited strong emission signals in the red (600, 610, 625, and 646 nm), green (548 and 560 nm), and blue (485 nm) wavelength regions. White-light emission was observed in Sm/Tb and Eu/Tb double-doped activated phosphors employing UV-LED excitation at 395 nm. The dependence of the luminescence emission intensities upon annealing temperature and rare-earth concentration was also examined. The results indicated that there exist optimum annealing temperature and activator ion concentration in order to obtain intense visible emission light with high color rendering index. The study suggests that the nanocomposite phosphor based upon 75SiO2:25PbF2 host herein reported is a promising contender for white-light LED applications.  相似文献   

15.
Phosphors of nanoparticles LaSrAl3O7:RE3+(REEu, Tb) have been prepared by a sol–gel method. The structure and luminescent properties of LaSrAl3O7:Eu3+ and LaSrAl3O7:Tb3+ phosphors were characterized by X-ray diffraction and atomic force microscopy (AFM), photoluminescence excitation and emission spectra were utilized. From X-ray diffraction (XRD) patterns, it is indicated that the phosphor LaSrAl3O7 forms without impurity phase at 900 °C. From atomic force microscopy (AFM) images, it is shown that the crystal size of the phosphores are about 60–80 nm. Upon excitation with UV irradiation, it is shown that there is a strong emission at around 617 nm corresponding to the forced electric dipole 5D07F2 transition of Eu3+, and at around 545 nm corresponding to the 5D47F5 transition of Tb3+. The dependence of photoluminescence intensity on Eu3+(or Tb3+) concentration and annealing temperature were also studied in detail.  相似文献   

16.
Eu3+-doped LiGd(MoO4)2 red phosphor was synthesized by solid-state reaction, and its photoluminescent properties were measured. The effect of Eu3+ doping concentration on PL intensity was investigated, and the optimum concentration of Eu3+ doped in LiGd(MoO4)2 was found to be 30 mol%. Compared with Y2O2S:0.05Eu3+, Na0.5Gd0.5MoO4:Eu3+ and KGd(MoO4)2:Eu3+, the LiGd(MoO4)2:Eu3+ phosphor showed a stronger excitation band around 395 nm and a higher intensity red emission of Eu3+ under 395 nm light excitation. For the first time, intensive red light-emitting diodes (LEDs) were fabricated by combining phosphor and a 395 nm InGaN chip, confirming that the LiGd(MoO4)2:Eu3+ phosphor is a good candidate for LED applications.  相似文献   

17.
Sodium europium double tungstate [NaEu(WO4)2] phosphor was prepared by the solid-state reaction method. Its crystal structure, photoluminescence properties and thermal quenching characteristics were investigated aiming at the potential application in the field of white light-emitting diodes (LEDs). The influences of Sm doping on the photoluminescence properties of this phosphor were also studied. It is found that this phosphor can be effectively excited by 394 or 464 nm light, which nicely match the output wavelengths of near-ultraviolet (UV) or blue LED chips. Under 394 or 464 nm light excitation, this phosphor exhibits stronger emission intensity than the Y2O2S:Eu3+ or Eu2+-activated sulfide phosphor. The introduction of Sm3+ ions can broaden the excitation peaks at 394 and 464 nm of the NaEu(WO4)2 phosphor and significantly enhance its relative luminance under 400 and 460 nm LEDs excitation. Furthermore, the relative luminance of NaEu(WO4)2 phosphor shows a superior thermal stability compared with the commercially used sulfide or oxysulfide phosphor, and make it a promising red phosphor for solid-state lighting devices based on near-UV or blue LED chips.  相似文献   

18.
Changyu Shen  Yi Yang  Huajun Feng 《Optik》2010,121(1):29-32
The shift of the emission band to longer wavelength (yellow-orange) of the Ba2MgSi2−xAlxO7: 0.1Eu2+ phosphor under the 350-450 nm excitation range has been achieved by adding the codoping element (Mn2+) in the host. The single-host silicate phosphor for WLED, Ba2MgSi2−xAlxO7: 0.1Eu2+, 0.1Mn2+ was prepared by high-temperature solid-state reaction. It was found experimentally that, its three-color emission peaks are situated at 623, 501 and 438 nm, respectively, under excitation of 350-450 nm irradiation. The emission peaks at 438 and 501 nm originate from the transition 5d to 4f of Eu2+ ions that occupy the two Ba2+ sites in the crystal of Ba2MgSi2−x AlxO7, while the 623 nm emission is attributed to the energy transfer from Eu2+ ions to Mn2+ ions. The white light can be obtained by mixing the three emission colors of blue (438 nm), green (501 nm) and red (623 nm) in the single host. When the concentrations of the Al3+, Eu2+ and Mn2+ ions were 0.4, 0.1 and 0.1 mol, respectively, the sample presented intense white emission. The addition of Al ion to the host leads to a substantial change of intensity ratio between blue and green emissions. White light could be obtained by combining this phosphor with 405 nm light-emitting diodes. The near-ultraviolet GaN-based Ba2MgSi1.7 Al0.3O7: 0.1Eu2+, 0.1Mn2+ LED achieves good color rendering of over 85.  相似文献   

19.
Xi Chen 《Journal of luminescence》2011,131(12):2697-2702
In this work, we report preparation, characterization and luminescent mechanism of a phosphor Sr1.5Ca0.5SiO4:Eu3+,Tb3+,Eu2+ (SCS:ETE) for white-light emitting diode (W-LED)-based near-UV chip. Co-doped rare earth cations Eu3+, Tb3+ and Eu2+ as aggregated luminescent centers within the orthosilicate host in a controlled manner resulted in the white-light phosphors with tunable emission properties. Under the excitation of near-UV light (394 nm), the emission spectra of these phosphors exhibited three emission bands: one broad band in the blue area, a second band with sharp lines peaked in green (about 548 nm) and the third band in the orange-red region (588-720 nm). These bands originated from Eu2+ 5d→4f, Tb3+5D47FJ and Eu3+5D07FJ transitions, respectively, with comparable intensities, which in return resulted in white light emission. With anincrease of Tb3+ content, both broad Eu2+ emission and sharp Eu3+ emission increase. The former may be understood by the reduction mechanism due to the charge transfer process from Eu3+ to Tb3+, whereas the latter is attributed to the energy transfer process from Eu2+ to Tb3+. Tunable white-light emission resulted from the system of SCS:ETE as a result of the competition between these two processes when the Tb3+ concentration varies. It was found that the nominal composition Sr1.5Ca0.5SiO4:1.0%Eu3+, 0.07%Tb3+ is the optimal composition for single-phased white-light phosphor. The CIE chromaticity calculation demonstrated its potential as white LED-based near-UV chip.  相似文献   

20.
A novel synthesis method was developed for the efficient red phosphor, Eu2+-activated Sr2Si5N8, by employing the strontium acetate as both the reducing agent and strontium source. The phase purity of final product was strongly dependent on the heating rate of the precursors. Sr2Si5N8:Eu2+ (2 at%) phosphor presented a broadband excitation spectrum in the range 300–500 nm, matching well with the blue emission (400/460 nm) of current InGaN light-emitting diodes (LEDs). The red emission peaking at 619 nm gave the relatively high (about 155%) intensity compared with the Y3Al5O12 (YAG) (P46-Y3) standard phosphor. In addition, the saturated chromatic coordinates (0.638, 0.359) allowed it a promising candidate as a red phosphor in white LEDs application for illumination or display.  相似文献   

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