Computational study on fluorine atom reaction with silane molecule (SiH4)

The fluorine atom’s reaction with silane molecule (SiH₄) is investigated in this work. Two reaction channels which form SiH₃+HF and SiH₃F+H are discussed in the microscopic level. The analyses of transition states show that the SiH₃+HF channel proceeds through a direct hydrogen abstract mechanism and the SiH₃F+H channel could take place via the substitution mechanism. The energetic information of the potential energy surface has been obtained using high-level ab initio molecular orbital theory. A dual-level direct dynamics method is employed to calculate the rate constants of the title reaction. The rate constants of the hydrogen abstraction channel are much larger than the substitution channel. The calculated rate constants are in best agreement with available experimental result.     

Counter-ion effect in the nucleophilic substitution reactions at silicon: a G2M(+) level theoretical investigation

Three identity nucleophilic substitution reactions at tetracoordinated silicon atom with inversion and retention pathways: Nu + SiH₃Cl → Nu + SiH₃Cl[Nu = (1)Cl⁻, (2) LiCl, and (3) (LiCl)₂], are investigated using the G2M(+) theory. Our results show that changing the nucleophile can shift the mechanism (favorable pathway), stepwise from a single-well PES for reaction 1, via a double-well PES for reaction 2, to a triple-well PES for reaction 3, indicating the importance of steric and electronic effects on the S_N2@Si. Electronic Supplementary Material The online version of this article (doi:) contains supplementary material, which is available to authorized users.     

Crossed Beams Study on the Dynamics of F Atom Reaction with 1,2-Butadiene

We have investigated the dynamics of the F+C₄H₆ reaction using the universal crossed molecular beam method. The C₄H₅F+H reaction channel was observed in this experiment. Angular resolved time-of-flight spectra have been measured for the C₄H₅F product. Product angular distributions as well as kinetic energy distributions were determined for this product channel. Experimental results show that the C₄H₅F product is largely backward scattered with considerable forward scattering signal, relative to the F atom beam direction. This suggests that the reaction channel mainly proceeds via a long-lived complex formation mechanism, with possible contribution from a direct SN₂ type mechanism.     

The time-resolved LMR method as used to measure elementary reaction rates of CI atoms and SiH3 radicals in pulse photolysis of S2Cl2 in the presence of SiH4

The time-resolved laser magnetic resonance (LMR) method has been applied to kinetic measurements for the first time. An intracavity spectrometer based on a CO₂ laser with resonant modulation of the magnetic field and with phase-sensitive detection of the signal has been used. Kinetic curves of generation and disappearance of CI atoms and SiH₃ radicals were obtained in the pulse photolysis of a mixture of S₂Cl₂ + SiH₄ under the fourth harmonic of a Nd laser (265 nm, 0.5 mJ, 12.5 Hz) at a total pressure of 520–980 Pa (he as diluent) and a temperature of 326 K. The reagent concentrations were: [S₂Cl₂ = (2.0?10.2)×10¹⁴ cm^?3, [SiH₄ = (2.4?17.4)×10¹³ cm^?3. To remove the transition saturation, 5.3×10¹⁵ cm^?3 CCl₄ was introduced into the reactor. The fraction of dissociated S₂Cl₂ was 1‰ Rate constants of the reactions (I) Cl+S₂Cl₂ → products, (II) Cl+SiH₄ → HCl+SiH₃ and a preliminary rate constant of the reaction (III) SiH₃ + S₂Cl₂ → products were obtained: k₁ ≤ (4.3±1.2)×10^?12 cm³/s, k₂ = (2.3±0.5)×10^?10 cm³/s, k₃ = (2.4±0.5)×10^?11 cm³/s. At a signal-to-noise ratio of 1:1, 1000 pulses and a 12 cm long detection zone the sensitivity to Cl atoms and to SiH₃ radicals was 4×10¹⁰ cm^?3 and = 10¹¹ cm^?3, respectively. The time resolution of the method was 4 μs. The method is shown to be promising for kinetic investigations and experiments on fast processes.     

Mass spectrometric determination of the heats of formation of the silane bromides

The reaction of SiBr₄(g) with H₂(g) in the temperature range 900–1143 K has been studied by a mass spectrometric method. Second and third law reaction enthalpies were obtained for SiBr₄(g) + H₂(g) = SiHBr₃(g) + HBr(g), SiHBr₃(g) + H₂(g) = SiH₂Br₂(g) + HBr(g), and SiH₂Br₂(g) + H₂(g) = SiH₃Br(g) + HBr(g). From the heats of reaction, third-law ΔH_£298 values of ?72.5 ± 1, ?43.2 ± 1.5 and ?15.3 ± 0.5 kcal/mole were obtained for SiHBr₃(g), SiH₂Br₂(g), and SiH₃Br(g), respectively.     

Theoretical study of the molecular ions SiH−5 and SiH−3

Ab initio HF and Cl calculations were performed to determine the equilibrium geometry of SiH^?₅ and SiH^?₃, the barrier for internal rotation (SiH^?₅) and inversion (SiH^?₃) and the stability of SiH^?₅ and further to study the effect of electron correlation on reaction energies. The gaussian-type basis included d and f functions on Si and a p set on II. The D_3h structures of SiH^?₅ is lower in energy than the C_4v structure by 2.9(3.2) kcal/mol (corresponding HF results in parentheses). SiH^?₃ has C_3v structure, the inner-ion barrier computed is 26.2 (27.3) kcal/mol. SiH^?₅ turns out to be stable with respect to SiH₄ + H^? by 20.3 (13.8) kcal/mol, but it is unstable with respect to SiH^?₃ ← H₂ by 6.3 (5.6) kcal/mol. These results show that electron correlation has a small effect on barriers of inversion (SiH^?₃) or pseudorotation (SiH^?₅), but may have a pronounced effect on reaction energies even if all systems involved have closed shells. The correlation energy contributions are analyzed in terms of intrapair and interpair terms in order to get a better understanding of the influence of correlation on reaction and activation energies.     

Theoretical study and rate constants calculation for the reactions of SiH3 radical with SiH3CH3 and SiH2(CH3)2

The multiple‐channel reactions SiH₃ + SiH₃CH₃ → products and SiH₃ + SiH₂(CH₃)₂ → products are investigated by direct dynamics method. The minimum energy path (MEP) is calculated at the MP2/6‐31+G(d,p) level, and energetic information is further refined by the MC‐QCISD method. The rate constants for individual reaction channels are calculated by the improved canonical variational transition state theory (ICVT) with small‐curvature tunneling (SCT) correction over the temperature range of 200–2400 K. The theoretical three‐parameter expression k₁(T) = 2.39 × 10⁻²³T^4.01exp(−2768.72/T) and k₂(T) = 9.67 × 10⁻²⁷T^4.92exp(−2165.15/T) (in unit of cm³ molecule⁻¹ s⁻¹) are given. Our calculations indicate that hydrogen abstraction channel from SiH group is the major channel because of the smaller barrier height among eight channels considered. © 2009 Wiley Periodicals, Inc. J Comput Chem 2010     

Monte Carlo simulation of O(1D) + H2 and O(1D) + HCl — rotational excitation of product OH radicals

Experimental studies with molecular beam and LIF techniques have independently shown that the reaction O(¹D) + H₂ → OH + H passes through a long-lived complex and gives products with small translational and large rotational excitation. We have previously published a statistical algorithm, based on ordinary RRKM theory with angular momentum restrictions included, which was designed to simulate molecular beam experiments. It has now been modified and applied to simulate the experimental rotational OH distributions from O(¹D)+H₂, measured by Luntz et al. The present study also includes simulation of similar results by Luntz for O(¹D) + HCI → OH + Cl. The purely statistical algorithm successfully simulates the apparently non-statistical experimental rotational distributions. For these reactions the total angular momentum conservation. which is applied at the transition state, proves to be decisive for the product energy distributions.     

Gas‐Phase Kinetics of Chlorosilylene Reactions II. ClSiH + C2H4: Absolute Rate Measurements and Quantum Chemical and RRKM Calculations for the Prototype π Addition Reaction

Time‐resolved studies of chlorosilylene, ClSiH, generated by the 193 nm laser flash photolysis of 1‐chloro‐1‐silacyclopent‐3‐ene, are carried out to obtain rate constants for its bimolecular reaction with ethene, C₂H₄, in the gas‐phase. The reaction is studied over the pressure range 0.13–13.3 kPa (with added SF₆) at five temperatures in the range 296–562 K. The second order rate constants, obtained by extrapolation to the high pressure limits at each temperature, fitted the Arrhenius equation: log(k^∞/cm³ molecule^?1 s^?1)=(?10.55±0.10) + (3.86±0.70) kJ mol^?1/RT ln10. The Arrhenius parameters correspond to a loose transition state and the rate constant at room temperature is 43 % of that for SiH₂ + C₂H₄, showing that the deactivating effect of Cl‐for‐H substitution in the silylene is not large. Quantum chemical calculations of the potential energy surface for this reaction at the G3MP2//B3LYP level show that, as well as 1‐chlorosilirane, ethylchlorosilylene is a viable product. The calculations reveal how the added effect of the Cl atom on the divalent state stabilisation of ClSiH influences the course of this reaction. RRKM calculations of the reaction pressure dependence suggest that ethylchlorosilylene should be the main product. The results are compared and contrasted with those of SiH₂ and SiCl₂ with C₂H₄.     

Relative rate studies for silylene

The photochemical decomposition of gaseous phenylsilane has been investigated at 206 nm and at 298 K. Observation of benzene and phenyldisilane, with and without added oxygen, indicate that formation of C₆H₆ + SiH₂ is an important primary process. Photolysis in the presence of added Me₃SiH, C₂H₄, C₂H₂, CH₃CCCH₃ and O₂ yielded rate cons- tants for reaction of SiH₂ with these species relative to phenylsilane. The results show SiH₂ to be a highly reactive and undiscrimi- nating species, except in its reaction with oxygen. No reaction with CH₄ was observed. The possibility of reaction with H₂ is discussed.