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1.
The effect of the ferromagnetic metal layer on tunnelling conductance and magnetoresistance in double magnetic planar junctions
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Based on the free-electron approximation,we investigate the effect of the ferromagnetic metal layer on the tunnelling magnetoresistance(TMR) and tunnelling conductance(TC)in the double magnetic tunnel junctions(DMTJs) of the structure NM/FM/I(S)/NM/I(S)/FM/NM,where FM,NM and I(S) represent the ferromagnetic metal,nonmagetic metal and insulator(Semiconductor),respectively,The FM,I(S)and inner NM layers are of finite thickness,while the thickness of the outer NM layer is infinite.The calculated results show that,due to the spin-dependent interfacial potential barriers caused by electronic band mismatch between the various magnetic and nonmagnetic layers,the dependences of the TMR and TC on the thicknesses of the FM layers exhibit oscillations,and a much higher TMR can be obtained for suitable thicknesses of FM layers. 相似文献
2.
Recently experiments and theories show that the tunnel magnetoresistance (TMR) does not only depend on the ferromagnetic metal electrodes but also on the insulator. Considering the rough-scattering effect and spin-flip effect in the insulator, this paper investigates the TMR ratio in a ferromagnet/insulator/ferromagnet (FM/I/FM) tunnelling junction by using Slonczewsik's model. A more general expression of TMR ratio as a function of barrier height, interface roughness and spin-flip effect is obtained. In lower barrier case, it shows that the TMR ratio depends on the roughscattering effect and spin-flip effect. 相似文献
3.
DONG Zheng-Chao 《理论物理通讯》2004,41(1):135-140
The tunneling conductance and tunneling magnetoresistance (TMR) are
investigated in ferromagnet/insulator/ferromagnet/insulator/d-wave
superconductor (FM/I/FM/I/d-wave SC) structures by applying an extended
Blonder-Tinkham-Klapwijk (BTK) approach. We study the effects of the
exchange splitting in the FM, the magnetic impurity scattering in the thin
insulator interface of FM/I/FM, and noncollinear magnetizations in adjacent
magnetic layers on the TMR. It is shown (1) that the tunneling conductance
and TMR exhibit amplitude-varying oscillating behavior with exchange
splitting, (2) that with the presence of spin-flip scattering in insulator
interface of FM/I/FM, the TMR can be dramatically enhanced, and (3)
that the TMR depends strongly on the angle between the magnetization of two
FMs. 相似文献
4.
S. Takahashi T. Yamashita H. Imamura S. Maekawa 《Journal of magnetism and magnetic materials》2002,240(1-3):100-102
The effect of spin relaxation on tunnel magnetoresistance (TMR) in a ferromagnet/superconductor/ferromagnet (FM/SC/FM) double tunnel junction is theoretically studied. The spin accumulation in SC is determined by balancing of the spin-injection rate and the spin-relaxation rate. In the superconducting state, the spin-relaxation time τs becomes longer with decreasing temperature, resulting in a rapid increase of TMR. The TMR of FM/SC/FM junctions provides a useful probe to extract information about spin-relaxation in superconductors. 相似文献
5.
Based on the nearly-free-electron approximation, the bias dependencies of electron transport properties of ferromagnet/ferromagnetic insulator (semiconductor)/ferromagnet junctions have been studied. Resonances appear in electron transmission probability. These resonances cause oscillations in the zero-temperature tunnel current and the resonances occur in tunnel conductance. Tunnel magnetoresistance (TMR) is an oscillatory function of bias. The TMR can reach a value as high as 100%. The bins dependencies of electron transport properties relate to the magnetic configurations of the junctions. 相似文献
6.
《Journal of magnetism and magnetic materials》2002,251(2):163-168
Taking into account the nonequilibrium spin accumulation, we apply a quantum-statistical approach to study the spin-polarized transport in a two-dimensional ferromagnet/semiconductor/ferromagnet (FM/SM/FM) double tunnel junction. It is found that the effective spin polarization is raised by increasing the barrier strength, resulting in an enhancement of the tunneling magnetoresistance (TMR). The nonequilibrium spin accumulation in SM may appear in both antiparallel and parallel alignments of magnetizations in two FMs, in particular for high bias voltages. The effects of spin accumulation and TMR on the bias voltage are discussed. 相似文献
7.
铁磁-超导隧道结中粗糙界面散射对直流Josephson电流的影响 总被引:2,自引:0,他引:2
通过求解Bogoliubov—de Gennes(BdG)方程得到铁磁超导共存态(FS)的自洽方程,在考虑结界面的粗糙情形下,由推广的Furusaki—Tsukada(FT)的电流公式计算了铁磁超导态/绝缘层/s波超导体(FS/I/S)结的直流Josephson电流,讨论了FS/I/S结的直流Josephson临界电流随磁交换能、温度的变化情况.研究表明:铁磁超导态中磁交换能和结界面的粗糙势垒散射均对FS/I/S结的直流Josephson电流有抑制作用. 相似文献
8.
运用拓展的BTK理论研究了拓扑绝缘层上铁磁/铁磁超导隧道结的磁效应和塞曼效应,同时考虑了铁磁体和铁磁超导体之间的费米能级错配效应.研究发现:在该系统中塞曼效应和邻近效应可以共存;铁磁体和铁磁超导体之间的费米能级错配效应能够增强系统中发生在eV=Δ处的Andreev谐振散射过程和邻近效应. 相似文献
9.
《Physics letters. A》2020,384(26):126641
We investigate the tunnel magnetoresistance (TMR) in an armchair phosphorene nanoribbon modulated by two ferromagnetic stripes. It is shown that large TMR can be achieved by applying a perpendicularly electric field to the phosphorene plane. We find that the TMR can be adjusted by an external gate voltage, and the TMR oscillates periodically from positive to negative by a slight change of the gate voltage. This characteristic can be observed in a wide region of exchange splitting values. Our findings open the way to design phosphorene-based spintronics nanodevices, and it may contribute to the future low power spintronic applications. 相似文献
10.
A recent theoretical estimation indicated that the NM/FI/FI/NM double spin-filter junction (DSFJ, here the NM and FI represent the nonmagnetic electrode and the ferromagnetic insulator (semiconductor) spacer, respectively) could have very high tunneling magnetoresistance (TMR) at zero bias. To meet the requirement in research and application of the magnetoresistance devices, we have calculated the dependences of tunneling magnetoresistance of DSFJ on the bias (voltage), the thicknesses of ferromagnetic insulators (semiconductors) and the average barrier height. Our results show that except its very high value, the TMR of DSFJ does not decrease monotonously and rapidly with rising bias, but increase slowly at first and decrease then after having reached a maximum value. This feature is in distinct contrast to the ordinary magnetic tunnel junction FM/NI/FM (FM and NI denote the ferromagnetic electrode and the nonmagnetic insulator (semiconductor) spacer, respectively), and is of benefit to the use of DSFJ as a magnetoresistance device. 相似文献
11.
12.
Strong anti-strain capacity of CoFeB/MgO interface on electronic structure and state coupling
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Electronic structure and spin-related state coupling at ferromagnetic material(FM)/MgO(FM = Fe, CoFe, CoFeB)interfaces under biaxial strain are evaluated using the first-principles calculations. The CoFeB/MgO interface, which is superior to the Fe/MgO and CoFe/MgO interfaces, can markedly maintain stable and effective coupling channels for majorityspin ?_1 state under large biaxial strain. Bonding interactions between Fe, Co, and B atoms and the electron transfer between Bloch states are responsible for the redistribution of the majority-spin ?_1 state, directly influencing the coupling effect for the strained interfaces. Layer-projected wave function of the majority-spin ?_1 state suggests slower decay rate and more stable transport property in the CoFeB/MgO interface, which is expected to maintain a higher tunneling magnetoresistance(TMR) value under large biaxial strain. This work reveals the internal mechanism for the state coupling at strained FM/MgO interfaces. This study may provide some references to the design and manufacturing of magnetic tunnel junctions with high tunneling magnetoresistance effect. 相似文献
13.
The electronic (quantum) transport in a NG/FB/FG tunnel junction (where NG, FB and FG are a normal graphene layer, a ferromagnetic barrier connected to a gate and a ferromagnetic graphene layer, respectively) is investigated. The motions of the electrons in the graphene layers are taken to be governed by the Dirac Equation. Parallel (P) and antiparallel alignment (AP) of the magnetizations in the barrier and in the ferromagnetic graphene are considered. Our work focuses on the oscillation of the electrical conductance (Gq), of the spin conductance (Gs) and of the tunneling magneto resistance (TMR) of this magnetic tunnel junction. We find that, the quantum modulation due to the effect of the exchange field in FB will be seen in the plots the conductance and of the TMR as functions of the thickness of ferromagnetic barrier (L). The period of two multiplied sinusoidal terms of the modulation are seen to be controlled by varying the gate potential and the exchange field of the FB layer. The phenomenon, a quantum beating, is built up with two oscillating spin conductance components which have different periods of oscillation related to the splitting of Dirac's energies in the FB region. The amplitudes of oscillations of Gq, Gs and TMR are not seen to decrease as the thickness increases. The decaying behaviors seen in the conventional transport through an insulator do not appear. 相似文献
14.
15.
Observation of minority spin character of the new electron doped manganite La0.7Ce0.3MnO3 from tunneling magnetoresistance 总被引:1,自引:0,他引:1
Mitra C Raychaudhuri P Dörr K Müller KH Schultz L Oppeneer PM Wirth S 《Physical review letters》2003,90(1):017202
We report the magnetotransport characteristics of a trilayer ferromagnetic tunnel junction built of an electron doped manganite (La0.7Ce0.3MnO3) and a hole doped manganite (La0.7Ca0.3MnO3). At low temperatures the junction exhibits a large positive tunneling magnetoresistance (TMR), irrespective of the bias voltage. At intermediate temperatures below T(C) the sign of the TMR is dependent on the bias voltage across the junction. The magnetoresistive characteristics of the junction strongly suggest that La0.7Ce0.3MnO3 is a minority spin carrier ferromagnet with a high degree of spin polarization, i.e., a transport half-metal. 相似文献
16.
采用自由能极小的方法研究了铁磁/反铁磁双层膜系统在外应力场下的一致进动自旋波性质,即铁磁共振现象. 本模型中铁磁层很薄可看成单畴结构,但具有单轴磁晶各向异性和立方磁晶各向异性;而反铁磁层仅具有单轴磁晶各向异性,但其厚度趋于半无穷. 推导出了该系统的铁磁共振频率和频谱宽度的解析式. 结果表明,外应力场和界面交换耦合或反铁磁磁强度仅在弱磁场下对系统的铁磁共振有影响,且系统的铁磁共振行为按磁场强度可分为两支,其区分弱磁场和强磁场的临界场依赖于外应力场的方向. 另一方面,应力场方向的改变可借助于反铁磁层磁畴变化对铁磁层磁晶各向异性轴有影响.
关键词:
铁磁/反铁磁双层膜
界面耦合强度
铁磁共振
应力场 相似文献
17.
The observed tunneling magnetoresistance (TMR) effect in La0.9Ba0.1MnO3 (LBMO)/Nb-doped SrTiO3 (Nb-STO) p+-n junctions is investigated and a possible mechanism responsible for the TMR generation is proposed by taking into account the dynamic spin accumulation and paramagnetic magnetization in the Nb-STO layer. Because of carrier diffusion across the dynamic domain boundaries in the Nb-STO layer and spin disordering in the LBMO layer, the tunneling resistance through the junction is high at zero magnetic field. The spin disordering is suppressed upon applying a non-zero magnetic field, which results in the spin-polarized tunneling in this ferromagnetic/depletion layer/dynamic ferromagnetic sandwiched structure and thus the observed TMR effect. The dependence of the TMR effect on the domain size in the LBMO layer, the tunneling current and temperature as well is explained, qualitatively consistent with the experimental observation. 相似文献
18.
A.S. Vasenko S. Kawabata A.A. Golubov M.Yu. Kupriyanov F.W.J. Hekking 《Physica C: Superconductivity and its Applications》2010,470(19):863-866
We investigate superconductor/insulator/ferromagnet/superconductor (SIFS) tunnel Josephson junctions in the dirty limit, using the quasiclassical theory. We consider the case of a strong tunnel barrier such that the left S layer and the right FS bilayer are decoupled. We calculate quantitatively the density of states (DOS) in the FS bilayer for arbitrary length of the ferromagnetic layer, using a self-consistent numerical method. We compare these results with a known analytical DOS approximation, which is valid when the ferromagnetic layer is long enough. Finally we calculate quantitatively the current–voltage characteristics of a SIFS junction. 相似文献
19.
Exchange anisotropy refers to the effect that an antiferromagnetic (AF)
layer grown in contact with a ferromagnetic (FM) layer has on the magnetic
response of the FM layer. The most notable changes in the FM hysteresis loop
due to the surface exchange coupling are a coercivity enhanced over the
value typically observed in films grown on a nonmagnetic substrate, and a
shift in the hysteresis loop of the ferromagnet away from the zero field
axis. A typical observation is that the thickness of the antiferromagnet
needs to exceed a critical value before exchange bias is observed. Here we
report on the exchange bias properties observed in an epitaxial Ni/NiO system where a thin NiO layer forms spontaneously and is observed after
annealing epitaxial Ni films MBE grown on MgO substrates. 相似文献
20.
利用氧化钽缓冲层对垂直各向异性钴铂多层膜磁性的影响,构想并验证了一种四态存储器单元.存储器器件包含两个区域,其中一区域的钴铂多层膜[Pt(3 nm)/Co(0.47 nm)/Pt(1.5 nm)]直接生长在热氧化硅衬底上,另一个区域在磁性膜和衬底之间沉积了一层氧化钽作为缓冲层[TaO x(0.3 nm)/Pt(3 nm)/Co(0.47 nm)/Pt(1.5 nm)],缓冲层导致两个区域的垂直磁各向异性不同.在固定的水平磁场下对器件施加与磁场同向的电流,由于电流引起的自旋轨道耦合力矩,两个区域的磁化取向均会发生翻转,且拥有不同的临界翻转电流.改变通过器件导电通道的电流脉冲形式,器件的磁化状态可以在4个态之间切换.本文器件的结构为设计自旋轨道矩存储器件提供了新的思路. 相似文献