基于SSH模型拓扑边界态和角态的实现

拓扑光子学的研究在光学通信领域具有重要的研究意义。为了实现拓扑边界态和角态,基于Su-Schrieffer-Heeger(SSH)模型,构建了二维正方形光子晶体结构,通过有限元软件仿真计算了该结构的能带,分析了对应的模式和拓扑相位。在此基础上实现了具有拓扑保护性质的边界态和角态,产生了相对带隙宽度为35%的较宽带隙,并通过频域仿真,验证了拓扑边界态具有单向传输特性和抗干扰的能力,拓扑角态能够把光波约束在角点的位置。结果表明：基于SSH模型设计的光子晶体结构能够实现高性能的拓扑边界态和角态,具有设计简单,容易实现的特点。     

二维声学系统中的拓扑相变及边界传输

拓扑声学的发现产生了一种可以有效抑制反射的声学边界传输态,不仅让人们重新认识了声传输现象,也扩展了声学新原理功能器件的研究领域。文章将介绍二维系统中拓扑声学的基本概念以及一些拓扑非平庸体系。主要关注利用背景流体构造的声类量子霍尔效应,利用共振耦合环形波导构造Floquet拓扑绝缘体,声类量子自旋霍尔效应以及声谷霍尔效应等。     

磁场中的拓扑绝缘体边缘态性质

用数值方法研究了拓扑绝缘体薄膜体系在外加垂直磁场 作用下其边缘态的性质. 磁场的加入通过耦合k+eA, 即Peierls势替换关系和 该作用导致的Zeeman交换场体现在哈密顿量中. 考虑窄条圆环状结构的二维InAs/GaSb/AlSb薄膜量子阱材料, 当其处于拓扑非平庸状态, 即量子自旋霍尔态时, 会出现受时间反演对称性保护的两支简并边缘态, 而在垂直磁场的作用下, 时间反演对称性被破坏, 这时能带将形成一条条的朗道能级, 原来简并的两支边缘态也会分开到朗道能级谱线的两侧, 从电子态密度的空间分布情况则可以看到边缘态分别局域在材料的两个边界. 随着磁场的增大, 位于同一边界上的不同 自旋极化的边缘态将出现分离: 一支仍然局域在边缘, 另一支则随外加磁场的增加而有逐渐演化到材料内部的趋势. 文中还计算了同一边界上的两支边缘态之间的散射, 结果表明由于两个边缘态在空间发生分离, 相互之间的散射被很大的压制, 得到了其散射随磁场增加没有明显变化的结论, 所以磁场并不会增强散射过程, 也没有破坏体拓扑材料的性质, 说明了量子自旋霍尔态在没有时间反演对称的情况下也可以有较强的稳定性.     

基于复合蜂窝结构的宽带周期与非周期声拓扑绝缘体

具有良好可重构性、良好缺陷兼容性及紧凑型的声学拓扑结构可能成为声学发展中一个有前景的方向.本文设计了一种可调谐、应用于空气声的二维宽带复合蜂窝形晶格结构,其元胞拥有两个变量:一个是中心圆的缩放参数s,另一个是"花瓣"图案围绕其质心的旋转角度q.研究发现当s为1.2, q为±33°时,在结构的布里渊区中心点出现四重简并态.在±33°两侧,能带会发生反转,体系经历拓扑相变;同时,结构的相对带隙宽带逐渐增加,其中q为0°和60°时,相对带宽分别为0.39和0.33.本研究还计算了由这两种转角的声子晶体组成的拼合结构的投影能带,发现在其体带隙中存在着边界态并验证了此拓扑边界的缺陷免疫特性.最后通过变化s,构建了一种非周期性双狄拉克锥型的声拓扑绝缘体并验证了其缺陷免疫性.本研究的体系相对带宽显著超过已知体系,将为利用声拓扑边界的声波器件微型化打下良好的基础.     

三聚化非厄密晶格中具有趋肤效应的拓扑边缘态

近年来,探索新的拓扑量子结构、深入分析各种多聚化拓扑晶格中的新奇物理性质已经成为热点.并且,多聚化拓扑模型在量子光学等领域的研究也愈发深入,拥有广阔的发展前景.本文聚焦于研究三聚化非厄密晶格中的新奇拓扑特性.首先,若晶胞内最近邻正反向耦合不相等,三聚化模型中的体态和边缘态出现趋肤效应.其中,随着最近邻耦合正反系数差的增大,拓扑保护的边缘态的宽度和简并度均可被调制,边缘态数量也会减少.其次,当在考虑次近邻耦合的影响时,随着次近邻耦合系数在适当范围内变化,系统本征能谱的上下能隙及其中具有趋肤效应的边缘态也会发生不对称的变化.此外,当适当改变两种耦合系数,三聚化非厄密模型的体态和边缘态的局域程度也会随之发生变化.     

空间盘绕型声学超材料的亚波长拓扑谷自旋态

声子晶体的Dirac线性色散关系,使其具有奇特的声拓扑特性,在声波控制领域具有良好的应用前景.目前,声子晶体的拓扑边缘态主要基于Bragg散射所产生的能带结构,难以实现低频声波的受拓扑保护单向边缘传输.本文引入空间盘绕结构,设计了具有C_(3v)对称性的空间盘绕型声学超材料,并研究其布里渊区高对称点(K/K'点)的亚波长Dirac锥形线性色散.接着,通过旋转打破空间盘绕型声学超材料的镜像对称性,使其Dirac简并锥裂开而产生亚波长拓扑相变和亚波长拓扑谷自旋态.最后,采用拓扑相位互逆的声学超材料构造拓扑界面,实现声拓扑谷自旋传输.空间盘绕型声学超材料的亚波长Dirac线性色散与亚波长拓扑谷自旋态突破了声子拓扑绝缘体的几何尺寸限制,为声拓扑稳健传输在低频段的应用提供理论基础.     

二维光/声学拓扑态

文章主要介绍光/声学拓扑态的基本概念和研究背景,评述了这一领域中二维体系研究的进展。首先简要回顾了霍尔效应及其与贝利曲率和对称性的关系,接着综合分析了不同对称性条件下的光和声拓扑态,包括光/声量子霍尔效应、Floquet拓扑绝缘体、量子自旋霍尔效应的相关工作,最后讨论了该领域可能的发展方向和前景。     

二维光子拓扑绝缘体研究进展

受凝聚态拓扑绝缘体研究的启发,整数量子霍尔效应、量子自旋霍尔效应、拓扑半金属、高阶拓扑绝缘体等拓扑物理相继在光学系统中实现.光子系统因能带干净,样品设计简单且制作精度高等优势,逐渐成为研究物理拓扑模型和新型拓扑效应的重要平台.拓扑光子学提供了全新的调控光场和操控光子的方法,其拓扑保护的边界态可实现光子对材料杂质缺陷免疫...     

超构材料中的光学拓扑态

拓扑态是当前凝聚态物理中的研究热点,是一种由于整体拓扑效应所导致的全新电子态。近年来,大量理论和实验工作表明,由于拓扑态本质上是一种单粒子波动行为,因此可以在光学体系中找到类比,于是开启了光学拓扑态这一新兴研究方向。光子晶体、光学耦合腔阵列等体系成为重要的拓扑态模拟平台。文章主要以一维Dirac方程体系和二维p波超导体系为例,介绍超构材料(Metamaterials)中的光学拓扑态特性,包括能带翻转、边界态、畴壁、涡旋零能态等典型拓扑行为。     

拓扑近藤绝缘体SmB6中的奇异电子性质

拓扑近藤绝缘体是一种本征的强关联拓扑电子体系,其体能隙来源于近藤关联效应。自2010年拓扑近藤绝缘体的理论概念被提出后,六硼化钐(SmB6) 作为第一种被预测为拓扑近藤绝缘体的材料在这十多年中被多种实验手段反复研究验证,被广泛接受认为是第一种拓扑近藤绝缘体。在这篇综述中,我们回顾了关于SmB6 的一些重要实验结果,比如电输运测量,角分辨光电子能谱(ARPES), 表面形貌分析(STM) 等,并论述了如何通过这些关键的实验证据证实SmB6 的拓扑近藤绝缘物相。同时,我们也展示了SmB6 这一关联电子体系的其他奇异物性,包括中间价态在表面和体内的分离现象,以及量子振荡发现的体振荡信号等等。这些性质表明我们对SmB6 这一材料的理解仍然不充分,其中还有更为丰富的物理值得挖掘。     

Transport features of topological corner states in honeycomb lattice with multihollow structure

Higher-order topological phase in 2-dimensional (2D) systems is characterized by in-gap corner states, which are hard to detect and utilize. We numerically investigate transport properties of topological corner states in 2D honeycomb lattice, where the second-order topological phase is induced by an in-plane Zeeman field in the conventional Kane–Mele model. Through engineering multihollow structures with appropriate boundaries in honeycomb lattice, multiple corner states emerge, which greatly increases the probability to observe them. A typical two-probe setup is built to study the transport features of a diamond-shaped system with multihollow structures. Numerical results reveal the existence of global resonant states in bulk insulator, which corresponds to the resonant tunneling of multiple corner states and occupies the entire scattering region. Furthermore, based on the well separated energy levels of multiple corner states, a single-electron source is constructed.     

Topological states at exceptional points

We consider an N-level non-Hermitian Hamiltonian with an exceptional point of order N. We define adiabatic equivalence in such systems and explore topological phase. We show that the topological exceptional states appear at the interface of topologically distinct systems. We discuss that topological states appear even in closed systems. We explore dynamical robustness of exceptional edge states.     

Topological states in quasicrystals

With the rapid development of topological states in crystals, the study of topological states has been extended to quasicrystals in recent years. In this review, we summarize the recent progress of topological states in quasicrystals, particularly focusing on one-dimensional (1D) and 2D systems. We first give a brief introduction to quasicrystalline structures. Then, we discuss topological phases in 1D quasicrystals where the topological nature is attributed to the synthetic dimensions associated with the quasiperiodic order of quasicrystals. We further present the generalization of various types of crystalline topological states to 2D quasicrystals, where real-space expressions of corresponding topological invariants are introduced due to the lack of translational symmetry in quasicrystals. Finally, since quasicrystals possess forbidden symmetries in crystals such as five-fold and eight-fold rotation, we provide an overview of unique quasicrystalline symmetry-protected topological states without crystalline counterpart.     

Topological surface states of Bi2Te2Se are robust against surface chemical modification

The robustness of the Dirac‐like electronic states on the surfaces of topological insulators (TIs) during materials process‐ing is a prerequisite for their eventual device application. Here, the (001) cleavage surfaces of crystals of the topological insulator Bi₂Te₂Se (BTS) were subjected to several surface chemical modification procedures that are common for electronic materials. Through measurement of Shubnikov–de Hass (SdH) oscillations, which are the most sensitive measure of their quality, the surface states of the treated surfaces were compared to those of pristine BTS that had been exposed to ambient conditions. In each case – surface oxidation, deposition of thin layers of Ti or Zr oxides, or chemical modification of the surface oxides – the robustness of the topological surface electronic states was demonstrated by noting only very small changes in the frequency and amplitude of the SdH oscillations. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Topological Lifshitz transition and novel edge states induced by non-Abelian SU(2) gauge field on bilayer honeycomb lattice

We investigate the SU(2) gauge effects on bilayer honeycomb lattice thoroughly. We discover a topological Lifshitz transition induced by the non-Abelian gauge potential. Topological Lifshitz transitions are determined by topologies of Fermi surfaces in the momentum space. Fermi surface consists of N = 8 Dirac points at π-flux point instead of N = 4 in the trivial Abelian regimes. A local winding number is defined to classify the universality class of the gapless excitations. We also obtain the phase diagram of gauge fluxes by solving the secular equation. Furthermore, the novel edge states of biased bilayer nanoribbon with gauge fluxes are also investigated.     

Topological nature of in‐gap bound states in disordered large‐gap monolayer transition metal dichalcogenides

We propose a physical model based on disordered (a hole punched inside a material) monolayer transition metal dichalcogenides (TMDs) to demonstrate a large‐gap quantum valley Hall insulator. We find an emergence of bound states lying inside the bulk gap of the TMDs. They are strongly affected by spin–valley coupling, rest‐ and kinetic‐mass terms and the hole size. In addition, in the whole range of the hole size, at least two in‐gap bound states with opposite angular momentum, circulating around the edge of the hole, exist.Their topological insulator (TI) feature is analyzed by the Chern number, characterized by spacial distribution of their probabilities and confirmed by energy dispersion curves (energy vs. angular momentum). It not only sheds light on overcoming low‐temperature operating limitation of existing narrow‐gap TIs, but also opens an opportunity to realize valley‐ and spin‐qubits. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Topological charge pump by surface acoustic waves

Quantized electron pumping by the surface acoustic wave across barriers created by a sequence of split metal gates is interpreted from the viewpoint of topology.The surface acoustic wave serves as a one-dimensional periodical potential whose energy spectrum possesses the Bloch band structure.The time-dependent phase plays the role of an adiabatic parameter of the Hamiltonian which induces a geometrical phase.The pumping currents are related to the Chern numbers of the filled bands below the Fermi energy.Based on this understanding,we predict a novel effect of quantized but nonmonotonous current plateaus simultaneously pumped by two homodromous surface acoustic waves.     

Topological properties of one-dimensional hardcore Bose-Fermi mixture

We study the topological properties of a one-dimensional （1D） hardcore Bose-Fermi mixture using the exact diagonalization method. We firstly add a hardcore boson to a fermionic system and by examining the edge states we find that the quasi-particle manifests the topological properties of the system. Then we study a mixture with 7 fermions and 1 boson. We find that the mixture also exhibits topological properties and its behaviors are similar to that of the corresponding fermionic system. We present a qualitative explanation to understand such behaviors using the mapping between a hardcore boson and a spinless fermion. These results show the existence of topological properties in a 1D hardcore Bose-Fermi mixture and may be realized using cold atoms trapped in optical lattices experimentally.