CMOS图像传感器在质子辐照下热像素的产生和变化规律

应用于空间的图像传感器在辐射影响下产生的热像素严重影响空间光电探测性能,本文通过质子辐照试验研究了热像素的产生和变化规律。首先,使用3 MeV和10 MeV两种能量的质子对图像传感器进行辐照,分析不同能量、不同注量的质子辐照产生热像素的性质;其次,再对辐照后的器件进行退火试验,分析热像素的退火规律。对于相同注量辐照,3 MeV质子辐照下热像素产生率大约是10 MeV质子辐照下的2.3倍,但是10 MeV质子辐照产生热像素的灰度值高于3 MeV质子;辐照过程中热像素的数量都是随着注量的增加线性增加。退火过程中,热像素数量都不断减少,而3 MeV质子辐照产生的热像素相比于10 MeV质子,退火更为显著。结果表明,质子辐照下每个质子与器件之间的作用过程及产生缺陷的机制是相对独立的,不同质子的作用过程之间没有相关性。不同能量的质子辐照产生缺陷的类型不同,导致热像素具有不同特性。     

高能质子引起器件单粒子效应的研究方法

简略介绍了高能质子在半导体芯片中引起单粒子效应的实验测量和理论分析方法,包括核反应分析方法、半经验方法,介绍了质子和重离子翻转截面间的关系,并用重离子实验数据预测器件在质子环境下的翻转率. This article introduces briefly the experimental and theoretical methods that have been used to study high energy proton induced single event effect in semiconductor devices. The theoretical methods including nuclear reaction analysis method and semi empirical method are presented. The relationship of upset cross section between proton and heavy ions is described. Finally, on orbit proton upset rates are predicted by using the heavy ion test data.     

用12C离子模拟质子引起的单粒子效应

在理论分析的基础上 ,提出了一种利用兰州重离子加速器提供的高能12C离子模拟质子引起单粒子效应的途径 .在保证核反应机制是引起单粒子效应主要机制的前提下,用高能12C离子可以模拟质子在功率金属 -氧化物 -半导体场效应晶体管中引起的单粒子烧毁以及单粒子栅极击穿 ,获得质子单粒子效应的饱和截面 ,定性研究质子单粒子效应的角度效应 ,还可以作为高能质子单粒子效应实验前的预备实验 .该方法拓展了兰州重离子加速器加速的轻的重离子在单粒子效应实验研究方面的应用 ,对现阶段国内开展质子单粒子效应实验研究具有重要意义. The mechanisms for proton and heavy ion induced single event effect (SEE) are discussed and a method to simulate proton induced SSEE (PSEE) with high energy 12 C is proposed in this paper. The experiments which can be done by using this method include single event burnout (SEB) and single event gate rupture in power MOSFET, single event upset (SEU) and single event transient (SET) in less sensitive device and angle effect. The experimets with high energy ...     

8T-全局曝光CMOS图像传感器单粒子翻转及损伤机理

针对卫星轨道上空间辐射环境引起的光学相机性能退化问题,采用8晶体管(8T)-全局曝光互补金属氧化物半导体(CMOS)图像传感器进行重离子辐照实验。实验结果显示,不同功能模块寄存器发生单粒子翻转,导致输出图像出现不同的异常模式,主要表现为输出图像"卡零"、若干相邻列输出异常、整幅图像"花屏"等。结合器件的不同子电路功能、工艺结构和工作原理,分析重离子入射器件微观作用过程对宏观图像异常模式的影响,深入探讨器件不同功能模块单粒子翻转的敏感性和损伤机理。研究结果可为CMOS图像传感器加固设计、单粒子地面模拟实验方法及标准和评估技术的建立提供重要参考。     

高能质子单粒子翻转效应的模拟计算

在分析质子与硅反应的基础上,提出质子单粒子翻转截面理论计算模型,建立了模拟计算方法.计算得到了不同能量的高能质子在存储单元的灵敏区内沉积的能量.指出高能质子主要通过与硅反应产生的重离子在存储单元灵敏区内沉积能量,产生电荷,导致单粒子效应,得到了单粒子翻转截面与质子能量以及随临界电荷变化的关系.并将计算得到的单粒子翻转截面与实验数据进行了比较.     

基于高速CMOS图像传感器的空间瞬态光探测

(以CMOS图像传感器LUPA-1300-2为对象,研究了多斜率积分功能)在空间瞬态光探测系统中的应用.以ACTEL公司APA600 Flash型FPGA为硬件载体,分析设计了其驱动控制,验证了LUPA-1300-2的易操作性,结果表明,该功能可以降低系统的复杂程度和提高系统观测的动态范围,有利于观测瞬态光点周围的瞬间变化,从而提高系统的可靠性和信息收集能力.     

铁电存储器中高能质子引发的单粒子功能中断效应实验研究

利用中国原子能科学研究院的中高能质子实验平台,针对两款商用铁电存储器开展了中高能质子单粒子效应实验研究,发现其中一款器件在质子辐照下发生了单粒子翻转和单粒子功能中断.本文主要针对单粒子功能中断效应展开了后续实验研究.首先通过改变质子能量对器件进行辐照,发现单粒子功能中断截面随质子能量的提高而增加.为进一步研究器件发生单粒子功能中断的机理,利用激光微束平台开展了辅助实验,对铁电存储器的单粒子功能中断效应的敏感区域进行了定位,最后发现铁电存储器单粒子功能中断是由器件外围电路发生的微锁定导致的.     

电荷耦合器件在质子辐照下的粒子输运仿真与效应分析

应用蒙特卡洛方法计算了质子在科学级电荷耦合器件(charge-coupled device, CCD) 结构中的能量沉积, 并结合该CCD的质子辐照试验及退火试验数据, 分析了器件的辐射损伤机理. 仿真计算体硅内沉积的位移损伤剂量和栅氧化层的电离损伤剂量, 辐照与退火试验过程中主要考察暗信号、电荷转移效率两个参数的变化规律. 研究结果显示, 暗信号和电荷转移效率的变化规律与位移、电离损伤剂量一致; 退火后暗信号大幅度降低, 辐照导致的表面暗信号增加占总暗信号增加的比例至少为80%; 退火后电荷转移效率恢复较小, 电荷转移效率降低的原因主要为体缺陷. 通过总结试验规律, 推导出了电荷转移效率退化程度的预估公式及其损伤因子k_damage.     

半导体器件单粒子效应的加速器模拟实验

着重描述了应用加速器开展半导体器件的单粒子效应实验研究的方法。采用金箔散射法可以降低加速器束流几个量级,从而满足半导体器件单粒子效应实验的要求。研制的弱流质子束流测量系统和建立的质子注量均匀性测量方法解决了质子注量的准确测量问题。实验测得静态随机存取存储器的质子单粒子翻转截面为10-7 cm2·bit-11量级,单粒子翻转重离子LET阈值为4～8MeV·cm2/mg,重离子单粒子翻转饱和截面为10-7 cm2·bit-1量级。     

半导体器件单粒子效应的加速器模拟实验

 着重描述了应用加速器开展半导体器件的单粒子效应实验研究的方法。采用金箔散射法可以降低加速器束流几个量级，从而满足半导体器件单粒子效应实验的要求。研制的弱流质子束流测量系统和建立的质子注量均匀性测量方法解决了质子注量的准确测量问题。实验测得静态随机存取存储器的质子单粒子翻转截面为10^-7 cm²·bit^-11量级，单粒子翻转重离子LET阈值为4～8MeV·cm²/mg，重离子单粒子翻转饱和截面为10^-7 cm²·bit^-1量级。     

Single event effect in a ferroelectric-gate field-effect transistor under heavy-ion irradiation

The single event effect in ferroelectric-gate field-effect transistor （FeFET） under heavy ion irradiation is investigated in this paper. The simulation results show that the transient responses are much lower in a FeFET than in a conventional metal-oxide-semiconductor field-effect transistor （MOSFET） when the ion strikes the channel. The main reason is that the polarization-induced charges （the polarization direction here is away from the silicon surface） bring a negative surface po- tential which will affect the distribution of carders and charge collection in different electrodes significantly. The simulation results are expected to explain that the FeFET has a relatively good immunity to single event effect.     

Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors

We investigate the angular dependence of proton-induced single event transient (SET) in silicon-germanium heterojunction bipolar transistors. Experimental results show that the overall SET cross section is almost independent of proton incident angle. However, the proportion of SET events with long duration and high integral charge collection grows significantly with the increasing angle. Monte Carlo simulations demonstrate that the integral cross section of proton incident events with high ionizing energy deposition in the sensitive volume tends to be higher at larger incident angles, which is associated with the angular distribution of proton-induced secondary particles and the geometry of sensitive volume.     

New insight into the parasitic bipolar amplification effect in single event transient production

In this paper, a new method is proposed to study the mechanism of charge collection in single event transient (SET) production in 90 nm bulk complementary metal oxide semiconductor (CMOS) technology. We find that different from the case in the pMOSFET, the parasitic bipolar amplification effect (bipolar effect) in the balanced inverter does not exist in the nMOSFET after the ion striking. The influence of the substrate process on the bipolar effect is also studied in the pMOSFET. We find that the bipolar effect can be effectively mitigated by a buried deep P⁺-well layer and can be removed by a buried SO₂ layer.     

New insight into the parasitic bipolar amplification effect in single event transient production

In this paper,a new method is proposed to study the mechanism of charge collection in single event transient (SET) production in 90 nm bulk complementary metal oxide semiconductor (CMOS) technology.We find that different from the case in the pMOSFET,the parasitic bipolar amplification effect (bipolar effect) in the balanced inverter does not exist in the nMOSFET after the ion striking.The influence of the substrate process on the bipolar effect is also studied in the pMOSFET.We find that the bipolar effect can be effectively mitigated by a buried deep P+-well layer and can be removed by a buried SO 2 layer.     

纳米静态随机存储器质子单粒子多位翻转角度相关性研究

器件特征尺寸的减小带来单粒子多位翻转的急剧增加, 对现有加固技术带来了极大挑战. 针对90 nm SRAM(static random access memory, 静态随机存储器)开展了中高能质子入射角度对单粒子多位翻转影响的试验研究, 结果表明随着质子能量的增加, 单粒子多位翻转百分比和多样性增加, 质子单粒子多位翻转角度效应与质子能量相关. 采用一种快速计算质子核反应引起单粒子多位翻转的截面积分算法, 以Geant4中Binary Cascade模型作为中高能质子核反应事件发生器, 从次级粒子的能量和角度分布出发, 揭示了质子与材料核反应产生的次级粒子中, LET(linear energy transfer)最大, 射程最长的粒子优先前向发射是引起单粒子多位翻转角度相关性的根本原因. 质子能量、临界电荷的大小是影响纳米SRAM器件质子多位翻转角度相关性的关键因素. 质子能量越小, 多位翻转截面角度增强效应越大; 临界电荷的增加将增强质子多位翻转角度效应.     

单粒子瞬变中的双极放大效应研究

采用三维数值模拟的方法对比研究了单个NMOS晶体管和反相器链中的单粒子瞬变（single event transient,SET）电流脉冲,发现深亚微米工艺下双极放大电流在单管的SET电流脉冲中占主要成分,而在反相器链的SET模拟中不明显,分析二者的区别解释了源/体结偏压的形成过程和放大机理,并证明了双极放大效应受源/体结偏压影响的结论.在此基础上分析了NMOS管中源极的正向电流及其机理,发现台阶区的源极正向电流主要是由扩散作用形成的. 关键词： 单粒子瞬变 双极放大 混合模拟 台阶区电流     

Experimental verification of the parasitic bipolar amplification effect in PMOS single event transients

The contribution of parasitic bipolar amplification to SETs is experimentally verified using two P-hit target chains in the normal layout and in the special layout. For PMOSs in the normal layout, the single-event charge collection is composed of diffusion, drift, and the parasitic bipolar effect, while for PMOSs in the special layout, the parasitic bipolar junction transistor cannot turn on. Heavy ion experimental results show that PMOSs without parasitic bipolar amplification have a 21.4% decrease in the average SET pulse width and roughly a 40.2% reduction in the SET cross-section.     

纳米静态随机存储器低能质子单粒子翻转敏感性研究

针对65, 90, 250 nm三种不同特征尺寸的静态随机存储器基于国内和国外质子加速器试验平台, 获取了从低能到高能完整的质子单粒子翻转截面曲线. 试验结果表明, 对于纳米器件1 MeV以下低能质子所引起的单粒子翻转截面比高能质子单粒子翻转饱和截面最高可达3个数量级. 采用基于试验数据和器件信息相结合的方法, 构建了较为精确的复合灵敏体积几何结构模型, 在此基础上采用蒙特卡罗方法揭示了低能质子穿过多层金属布线层, 由于能量岐离使展宽能谱处于布拉格峰值的附近, 通过直接电离方式将能量集中沉积在灵敏体积内, 是导致单粒子翻转截面峰值的根本原因. 并针对某一轨道环境预估了低能质子对空间质子单粒子翻转率的贡献.     

4H-SiC NMOS电子、质子辐照数值模拟

分析了高能电子、质子对4H-SiC的损伤机理,建立了4H-SiC NMOS器件物理模型。电子、质子辐照效应模型。应用ISE-TCAD软件进行数值模拟计算,得出在能量为2.5 MeV、注量为5×1013 cm-2的电子辐照及能量为6.5 MeV、注量为2×1014 cm-2的质子辐照下,4H-SiC NMOS转移特性曲线和亚阈值漏电流曲线变化的初步规律。数值模拟结果与相同条件下Si NMOS实验结果吻合较好。     

Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation

Nitrogen plasma passivation （NPP） on （111） germanium （Ge） was studied in terms of the interface trap density, roughness, and interfacial layer thickness using plasma-enhanced chemical vapor deposition （PECVD）. The results show that NPP not only reduces the interface states, but also improves the surface roughness of Ge, which is beneficial for suppressing the channel scattering at both low and high field regions of Ge MOSFETs. However, the interracial layer thickness is also increased by the NPP treatment, which will impact the equivalent oxide thickness （EOT） scaling and thus degrade the device performance gain from the improvement of the surface morphology and the interface passivation. To obtain better device performance of Ge MOSFETs, suppressing the interfacial layer regrowth as well as a trade-off with reducing the interface states and roughness should be considered carefully when using the NPP process.