基于Mie散射理论对砷化镓光子晶体安德森定域化研究

 基于Mie散射理论和低浓度近似,对砷化镓作为散射体光子晶体中的安德森定域化参量进行了理论计算,并分析了影响定域化现象的各种因素。结果表明:在散射体体积分数为10%,相对折射率大于3.8时,远红外区50~65 μm范围内出现严格的定域化现象;随着散射体半径的增大,定域化区向长波方向移动,且定域化参量先增大后减小。     

类Opal光子晶体红外区安德森定域化理论研究

本文根据Mie散射理论和低浓度近似下,对在中红外区高折射率半导体材料AlP等做为散射体的类Opal光子晶体的安德森定域化进行了理论研究,发现在浓度为10%,折射率比值大于3.8,无吸收状态下,此类晶体将出现两个定域化区.同时为此类晶体的定域化研究提供了一个比较理想的处理方法.     

中红外区二氧化钛反蛋白石光子晶体的光子定域化研究

为了得到二氧化钛反蛋白石光子晶体中影响光子定域化的规律,基于Mie散射理论和低浓度近似,对光子定域化参量进行了数值计算与理论分析,发现在该氧化物的剩余射线区内,入射波长和散射体大小对光子定域化有明显的影响.结果表明,在散射体浓度为10%,相对折射率大于3.8时,在中红外区13.3~15.3 μm范围内出现了光子定域化现象,并随着散射体半径的增大,定域化区向长波方向移动;同时,定域化参量先增大后减小.研究结果为实验上在该类光子晶体中实现光子定域化现象提供了理论参考.     

中红外区二氧化钛反蛋白石光子晶体的光子定域化研究

为了得到二氧化钛反蛋白石光子晶体中影响光子定域化的规律,基于Mie散射理论和低浓度近似,对光子定域化参量进行了数值计算与理论分析,发现在该氧化物的剩余射线区内,入射波长和散射体大小对光子定域化有明显的影响.结果表明,在散射体浓度为10%,相对折射率大于3.8时,在中红外区13.3～15.3 μm范围内出现了光子定域化现...     

红外区金属氧化物反蛋白石光子晶体的安德森定域化研究

根据Mie散射理论,在低浓度近似下,对中红外区由金属氧化物构成的反蛋白石光子晶体的禁带的存在区域,即光子定域化区进行了研究。发现在浓度为10%,此类晶体在中红外区将出现多个光子禁带区域,并且计算了影响定域化区域的各种因素。由此可知利用材料在剩余射线带内折射率小于1的特性,我们可以制备出中红外区和远红外区存在禁带的光子晶体。这一结果为反蛋白石晶体的研究提供了理论方法。     

迈克耳孙干涉实验

描述了迈克耳孙干涉仪的结构、原理和调节方法,对非定域干涉和定域干涉的成像过程和干涉条纹特点进行了分析,实现了氦氖激光波长和透明玻璃薄片折射率的测量实验,并对透明玻璃薄片折射率测量实验的调节方法和实验现象进行了详细讨论.     

含金属散射体的中红外无序介质的光子定域化理论研究

基于Mie散射理论发现,各种金属在中红外区的各个频率点上的散射行为均极为相近,是一种在中红外区反照率高但散射效率较低的散射体.在浓度为10%时,介质的定域化参量最小只能达到6.6,并且与体系的常用基质材料无关.数值研究揭示了这种金属散射体系统与低吸收、高折射率散射体系统间的内在联系 关键词： 光子定域化 无序介质 中红外 Mie散射 金属     

晶体电光和非线性光学效应的离子基团理论(Ⅳ) 钙钛矿、钨青铜型、LiNbO_3型晶体线性极化率计算

本文再次采用氧八面体基团模型及定域化轨道波函数的方法系统地计算了九种钙钛矿、钨青铜型和LiNbO_3型晶体的折射率。在未引入任何可调整参量的情况下,计算值与实验值之差仅10%左右。由此可见,氧八面体基团模型及定域化轨道波函数的计算方法不但能在定量上阐明这两种类型材料的电光和非线性光学效应的机理,同时也能阐明光频线性极化率的各种性质。本文的计算还表明,虽然奇次项晶格场是晶体产生电光和非线性光学效应的决定因素,但对线性极化率的影响恰非常小。最后,就定域化轨道方法的可靠性作了某些讨论。     

非定域量子Noether恒等式及应用

基于高阶微商奇异拉氏量系统的相空间生成泛函,导出了定域和非定域变换下的量子正则Noether恒等式;对高阶微商规范不变系统,导出了位形空间中定域和非定域变换下的量子Noether恒等式.指出在某些情形下,由量子Noether恒等式可导致系统的量子守恒律.这种求守恒律的程式与量子Noether(第一)定理不同.用于高阶微商非AbelChern-Simons(CS)理论,求出某些非定域等变换下的量子守恒量.     

半导体中定域模,准定域模晶格振动的光谱研究

本文讨论了用光学方法研究杂质诱发定域化振动模的理论模型,分门别类地论述了半导体中杂质诱发的定域模、禁带模、共振模和准定域模晶格振动及非晶态半导体的晶格振动谱,给出了它们的综合结果。半导体中杂质诱发定域模已被人们广为研究,作者主要以自己的结果阐述了禁带模、共振模、准定域模和非晶态半导体振动谱研究在近年来取得的重要进展。除以较多篇幅研究各种定域化振动模的位置外,本文还从键—电荷模型出发讨论了杂质诱发振动吸收带的强度。     

Photon localization in amorphous photonic crystal

The photon localization in disordered two-dimensional photonic crystal is studied theoretically. It is found that the mean transmission coefficient in the photonic band decreases exponentially as the disorder degree increases, reflecting the occurrence of Anderson localization. The strength of photon localization can be controlled by tuning the disorder degree in the photonic crystal. We think the variation regular of the transmission coefficient in our disordered system is equivalent to that of the scaling theory of localization. PACS 42.70.Qs; 41.20.Jb; 42.25.Dd     

Anomalous Minimum and Scaling Behavior of Localization Length Near an Isolated Flat Band

Using one‐dimensional tight‐binding lattices and an analytical expression based on the Green's matrix, we show that anomalous minimum of the localization length near an isolated flat band, previously found for evanescent waves in a defect‐free photonic crystal waveguide, is a generic feature and exists in the Anderson regime as well, i.e., in the presence of disorder. Our finding reveals a scaling behavior of the localization length in terms of the disorder strength, as well as a summation rule of the inverse localization length in terms of the density of states in different bands. Most interestingly, the latter indicates the possibility of having two localization minima inside a band gap, if this band gap is formed by two flat bands such as in a double‐sided Lieb lattice.     

Disorder-induced localization of light near edges of nonlinear photonic lattices

We investigated the influence of edges and corners on the Anderson localization of light in disordered two-dimensional photonic lattices that are optically induced in nonlinear saturable photorefractive media. A systematic quantitative study of gradual transition from corner to bulk Anderson localization in truncated two-dimensional photonic lattices was carried out. We analyzed numerically the localization at several corners and edges of the square and triangular photonic lattices and compared them with the localization in bulk medium. We found that, for strong disorder, corners and edges effectively suppress Anderson localization, as compared to the bulk, but to a varying degree.     

Order to disorder optical phase transition in random photonic crystals

Transition process of optical modal properties induced by the introduction of randomness into random photonic crystals is investigated by a computational method. We analyze an impulse response of two-dimensional triangular photonic crystals, in which the positions of the air holes are slightly deviated to random directions. It is shown that the appropriate degree of random departure from a perfect crystal state gives rise to multiple scattering of low group velocity band-edge modes and supports their strong Anderson localization. The achieved confinement efficiency of light exceeds the one obtained in the perfect photonic crystal state.     

Ray Modes in Random Gap Systems

A disordered photonic crystal with spectral degeneracies in the form of Dirac nodes is considered. Disorder can create a random gap at the Dirac nodes, which leads to the formation of random edge modes. We study the distribution of these edge modes and find from symmetry considerations that the discrete anisotropy of the photonic crystal is spontaneously broken for the propagation of photons from a local photon source. This effect can be understood as the spontaneous creation of a ray mode or as the creation of a one‐dimensional waveguide in a two‐dimensional photonic crystal through strong random scattering. The phenomenon must be distinguished from Anderson localization of photons in a single band crystal and can be considered as angular localization, since it creates geometric states rather than confining the photons to an area of the size of the localization length. The propagation of the photon intensity is described by a Fokker‐Planck equation, whose drift term is determined by the spectrum of the photonic crystal near the Dirac node.     

Localization of optical pulses in guided wave structures with only fourth order dispersion

Inspired by the recent realization of pure-quartic solitons (Blanco-Redondo et al. (2016) [1]), in the present work we study the localization of optical pulses in a similar system, i.e., a silicon photonic crystal air-suspended structure with a hexagonal lattice. The propagation of ultrashort pulses in such a system is well described by a generalized nonlinear Schrödinger (NLS) equation, which in certain conditions works with near-zero group-velocity dispersion and third order dispersion. In this case, the NLS equation has only the fourth order dispersion term. In the present model, we introduce a quasiperiodic linear coefficient that is responsible to induce the localization. The existence of Anderson localization has been confirmed by numerical simulations even when the system presents a small defocusing nonlinearity.