Thin films of vanadium oxide grown on vanadium metal: oxidation conditions to produce V2O5 films for Li‐intercalation applications and characterisation by XPS,AFM, RBS/NRA

Thin films of vanadium oxide were grown on vanadium metal surfaces (i) in air at ambient conditions, (ii) in 5 mM H₂SO₄ (aq), pH 3, (iii) by thermal oxidation at low oxygen pressure (10^?5 mbar) at temperatures between 350 and 550 °C and (iv) at near‐atmospheric oxygen pressure (750 mbar) at 500 °C. The oxide films were investigated by atomic force microscopy (AFM), X‐ray photoelectron spectroscopy (XPS), X‐Ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) and nuclear reaction analysis (NRA). The lithium intercalation properties were studied by cyclic voltammetry (CV). The results show that the oxide films formed in air at room temperature (RT), in acidic aqueous solution, and at low oxygen pressure at elevated temperatures are composed of V₂O₃. In air and in aqueous solution at RT, the oxide films are ultra‐thin and hydroxylated. At 500 °C, nearly atmospheric oxygen pressure is required to form crystalline V₂O₅ films. The oxide films grown at pO₂ = 750 mbar for 5 min are about 260‐nm thick, and consist of a 115‐nm outer layer of crystalline V₂O₅. The inner oxide is mainly composed of VO₂. For all high temperature oxidations, the oxygen diffusion from the oxide film into the metal matrix was considerable. The oxygen saturation of the metal at 450 °C was found, by XPS, to be 27 at.% at the oxide/metal interface. The well‐crystallized V₂O₅ film, formed by oxidation for 5 min at 500 °C and 750 mbar O₂, was shown to have good lithium intercalation properties and is a promising candidate as electrode material in lithium batteries. Copyright © 2005 John Wiley & Sons, Ltd.     

Band alignment and defect states in amorphous GaInZnO thin films grown on SiO2/Si substrates

The band alignment and defect states of GaInZnO thin films grown on SiO₂/Si via radio frequency (RF) magnetron sputtering were investigated by using X‐ray photoelectron spectroscopy, reflection electron energy loss spectroscopy, thermally stimulated exo‐electron emission and photo‐induced current transient spectroscopy.The band gap via reflection electron energy loss spectroscopy was 3.2 eV. The defect states via photo‐induced current transient spectroscopy and thermally stimulated exo‐electron emission were at 0.24, 0.53, 1.69 and 2.01 eV below the conduction band minimum of GIZO thin films, respectively. The defect states at 0.24 and 0.53 eV are related to the field‐effect mobility, and the defect stated at 1.69 and 2.01 eV is related to the oxygen vacancy defect. Copyright © 2016 John Wiley & Sons, Ltd.     

Development of cerium‐based conversion coatings on 2024‐T3 Al alloy after rare‐earth desmutting

The deposition of Ce‐based conversion coatings onto 2024‐T3 Al alloy sheet was studied using Rutherford backscattering spectroscopy, scanning electron microscopy, Auger electron spectroscopy, x‐ray photoelectron spectroscopy and atomic force microscopy. The Al sheet was pretreated with an alkaline clean followed by treatment in a Ce(IV) and H₂SO₄‐based desmutter. The Ce(IV)‐based conversion coating solution contained 0.1 M CeCl₃·7H₂O and 3% H₂O₂ and was acidified to pH 1.9 with HCl. Upon immersion, there was an induction period that included activation followed by aluminium oxide growth over the matrix and cerium oxide deposition onto cathodic intermetallic particles and along rolling marks on the surface. After the induction period cerium oxide deposited generally across the whole surface and thickened. The strongest anodic sites initially were adjacent to the intermetallic cathodes and resulted in aluminium dissolution but also oxide thickening. Copyright © 2004 John Wiley & Sons, Ltd.     

Nanostructural properties of zinc oxide thin films grown on non‐planar substrates

The crystallographic structure of zinc oxide thin films grown on optical fibres using single source chemical vapour deposition (SSCVD) was analysed using near edge X‐ray absorption fine structure (NEXAFS). Zinc diethyl carbamate was used as a precursor for the growth of highly conformal films in a one‐step deposition process without substrate rotation and at substrate temperatures of 400–575 °C. It was found that the growth temperatures greatly affected the crystallographic structure of the film with no preferred crystallographic orientation and negligible crystallinity at low temperatures and very high crystallinity with pure c‐axis orientation at high temperatures. Cross‐sectional analysis of the films by scanning electron microscopy (SEM) showed the presence of a film at all points around the fibre. These films generally consisted of densely packed columns that bore a strong resemblance to c‐axis‐oriented films grown on planar substrates. Copyright © 2005 John Wiley & Sons, Ltd.     

Growth,characterization and interfacial reaction of magnetron sputtered Pt/CeO2 thin films on Si and Si3N4 substrates

Growth of magnetron sputtered Pt/CeO₂ thin films on Si and Si₃N₄ were characterized by X‐ray diffraction (XRD), field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM) and X‐ray photoelectron spectroscopy (XPS). Interaction of Pt/CeO₂ films with Si on Si and Si₃N₄ substrates was extensively investigated by XPS. XRD studies show that films are oriented preferentially to (200) direction of CeO₂. XPS results show that Pt is mainly present in +2 oxidation state in Pt/CeO₂/Si film, whereas Pt⁴⁺ predominates in Pt/CeO₂/Si₃N₄ film. Concentration of Pt⁴⁺ species is more than four times on Si₃N₄ substrate as compared with that on Si. Ce is present as both +4 and +3 oxidation states in Pt/CeO₂ films deposited on Si and Si₃N₄ substrates, but concentration of Ce³⁺ species is more in Pt/CeO₂/Si film. Interfacial reaction between CeO₂ and Si substrate is controlled in the presence of Pt. Pt/Ce concentration ratio decreases in Pt/CeO₂/Si₃N₄ film upon successive sputtering, whereas this ratio decreases initially and then increases in Pt/CeO₂/Si film. Copyright © 2015 John Wiley & Sons, Ltd.     

Optimization of cryo‐XPS analyses for the study of thin films of a block copolymer (PS‐PEO)

The water‐induced surface reorganization of a thin film of a block copolymer [polystyrene‐b‐poly(ethylene oxide), PS‐PEO], was studied by cryogenic X‐ray photoelectron spectroscopy (cryo‐XPS). Experimental parameters were examined with a view to optimize the analysis. The absence of artifacts due to the low temperature of analysis was checked, and the influence of the procedure used for sample hydration before analysis was investigated. Adequate timing of the different steps of the analysis and temperature program was also established. With this optimized protocol, an important reorganization of the block copolymer was detected, showing more pronounced exposure of the PEO block at the outermost surface in hydrated compared to dry environment. As this type of polymer surface is prone to be used for biomedical applications, an accurate knowledge of the chemical composition of the outermost surface in aqueous environments is crucial. The development of this technique is therefore promising for related systems. Copyright © 2011 John Wiley & Sons, Ltd.     

Quantitative analysis of an organic thin film by XPS,AFM and FT‐IR

We report the characterization of Firpic (iridium(III)bis[4,6‐di‐fluorophenyl]‐pyridinato‐N,C²,]picolinate) organic thin film prepared by vacuum deposition to provide a systematic route to organic film quantification. To analyze the characteristics of thin Firpic films on a Si substrate, various techniques such as XPS, Fourier transform infra‐red (FT‐IR) spectrometer, and atomic force microscopy (AFM) are utilized. The Firpic films remain stable without surface morphological or compositional change during deposition and after exposure to X‐ray irradiation or atmospheric environment, for which qualities these films are believed to be an ideal platform as a pure organic thin film. The monotonic increases in FT‐IR and XPS intensities with film thickness are matching well with each other. In particular, from the XPS intensity analysis, the relative atomic sensitivity factors of the present system, electron attenuation length, and molecular density in the organic thin film can be evaluated. Copyright © 2011 John Wiley & Sons, Ltd.     

Microstructure analysis of sol‐gel‐derived nanocrystalline ITO thin films

The technique for ITO (Tin‐doped indium oxide) thin films by sol‐gel process is presented in this paper. After annealing at 500° for 15 min, ITO gel films get transformed into nanocrystallined indium tin oxide films. We studied the microstructure of ITO thin film which is closely related to optical and electrical properties. The microstructure of ITO thin film can be observed through high‐resolution transmission electronic spectroscopy (HRTEM) and the Fast Fourier Transform (FFT) technique. The film is nanocrystallite with grain sizes about 20 nm. Also, the surface chemical components were studied by XPS spectra. The transmission and the resistivity of ITO films is 97.0% and 3.5 × 10^?3 Ω?cm, respectively. Copyright © 2010 John Wiley & Sons, Ltd.     

Ion induced controlled modifications in structural and optical properties of indium oxide thin films – studies with 25‐keV Co− and N+ beam implantations

Two sets of indium oxide thin films (~150 nm) grown on quartz substrates using thermal evaporation technique were processed separately with 25‐keV Co^? and N⁺ ions with several fluences ranging from 1.0 × 10¹⁵ to 1.0 × 10¹⁶ ions/cm². The pristine and the ion implanted films were characterized by Rutherford backscattering spectroscopy (RBS), X‐ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and UV–Vis spectrometry. The RBS spectra reveal signature of only cobalt and nitrogen in accordance to their fluences confirming absence of any contamination arising due to ion implantation. An increase in the average crystallite size (from 13.7 to 15.3 nm) of Co^? ions implanted films was confirmed by XRD. On the other hand, the films implanted with N⁺ ions showed a decrease in the average crystallite size from 20.1 to 13.7 nm. The XRD results were further verified by SEM micrographs. As seen in AFM images, the RMS surface roughness of the samples processed by both ion beams was found to decrease a bit (29.4 to 22.2 nm in Co^? implanted samples and 24.2 to 23.3 nm in N⁺ implanted samples) with increasing fluence. The Tauc's plot deduced from UV–visible spectroscopy showed that the band gap decreases from 3.54 to 3.27 eV in Co^? implanted films and increases from 3.38 to 3.58 eV for films implanted with N⁺ ions. The experimental results suggest that the modifications in structural and optical properties of indium oxide films can be controlled by optimizing the implantation conditions. Copyright © 2017 John Wiley & Sons, Ltd.     

Structural and magnetic properties of thin manganite films grown on silicon substrates

Polycrystalline La_0.7Sr_0.3MnO₃ manganite thin films were grown on silicon substrates covered by SiO_x amorphous native oxide. Unusual splitting of the manganite layer was found: on the top of an intermediate layer characterised by lower crystalline order, a magnetic robust layer is formed. Curie temperatures of about 325 K were achieved for 70 nm thick films. A strong room temperature XMCD signal was detected indicating high spin polarisation near the surface.     

Effects of Ag doping on the photoluminescence of ZnO films grown on Si substrates

Silver (Ag) doped and undoped ZnO films were grown on Si (100) substrates by the sol-gel process. Photoluminescence (PL) of two kinds of samples as a function of the excitation intensity has been measured, and PL intensities have been fitted by a power law. It is found that Ag doping increases the intensity of free emission from ZnO and does not change the position and the full width at half-maximum of the free exciton emission. In PL spectra of two kinds of samples under various excitation powers, no visible emission bands related to the deep levels were observed. These results reveal that doped Ag in ZnO films only enhances emission efficiency from free exciton recombination, not giving rise to new emissions.     

Antibacterial and physicochemical properties of co‐sputtered CuSn thin films

Copper‐tin thin films (CT TFs) were deposited on p‐type Si(100) by radio frequency (RF) magnetron co‐sputtering method. The atomic ratio of Cu and Sn showed complementary tendency with various RF powers on metal targets. Antibacterial test was conducted with Gram‐negative Escherichia coli. The ratio of Cu and Sn ions and the contact time with E. coli affected the antibacterial efficiency. Increasing the ratio of Cu ions and contact time showed higher antibacterial activity. Cu₂₀Sn₆ called as bronze structure, metallic Cu, and copper oxide phases were identified from X‐ray diffraction data after sterilization. The lattice strain that was changed due to the substitution of Cu and Sn was also calculated. The surface morphology of CT TFs was entirely grown to round shape when the dominant element was Sn. But, as the content of Cu increased, the surface morphology was changed from ball shape to sharp column shape. When fixed contact time, the intensities of Cu 2p increased but the intensities of Sn 3d decreased as increasing the atomic ratio of Cu. The oxidation of Cu was more sharply progressed as the RF power on Cu target increased. When fixed CT TFs, the intensities of Cu 2p were consistent but the intensities of Sn 3d_3/2 decreased as increasing contact time between CT TF and E. coli.     

Theoretical and experimental analyses of the deposited silver thin films

The silver thin films have been prepared using magnetron DC‐sputtering. We discuss in detail the thin films AFM images and their properties in different sputtering times of 2 to 6 minutes. Despite the low thickness of the films, the roughness saturation amounts, W_s, are well separated. The surface data do not follow the normal Family‐Vicsek scaling, and we have the local growth exponent, β(W_s(t)∼t^β). We obtained the global roughness scaling exponent α=0.36 and growth exponent, β=0.50. We also obtain the fractal spectrum of the data, f(α). The results show that the spectrum is right‐hook like. It distinguishes between different film thicknesses even in small sizes of hundreds of nanometers. Furthermore, we measure the surface conductivities and compare them to the thin film roughnesses. We investigate the roughness and fractality of the AFM data, looking for their relations to width and conductivity of the silver thin film samples.     

Surface modification of ethylene‐co‐tetrafluoroethylene films by remote plasmas

The surface modifications of ethylene‐co‐tetrafluoroethylene (ETFE) surfaces by six plasmas (direct H₂, Ar, and O₂ plasmas and remote H₂, Ar, and O₂ plasmas) were investigated with two questions in mind: (1) what plasma could effectively modify ETFE surfaces and (2) which of the CF₂? CF₂ and CH₂? CH₂ components in ETFE was selectively modified? The plasma exposure led to a weight loss from the ETFE surfaces and changes in the chemical composition on ETFE surfaces. The weight‐loss rate showed a strong dependence on what plasma was used for the modification. The remote H₂ plasma led to the lowest rate of weight loss in the six plasma exposures, and the direct O₂ plasma led to the highest rate of weight loss. During exposure to the plasmas, defluorination occurred, and two new C_1s components [? CH₂? CHF? CH₂? and ? CH₂? CH(O? R)? CF_x? , and ? CH₂? CHF? CF₂? , ? CH₂? C(O)? CF_x? , and ? CF_x? C(O)? O? ] were formed on the modified ETFE surfaces. Defluorination was strongly influenced by what plasma was used for the modification. The remote H₂ and Ar plasmas showed high defluorinations of 55 and 51%, respectively. The remote O₂ plasma showed a low defluorination of only 25%. Conclusively, the remote H₂ and Ar plasma exposure effectively modified ETFE surfaces. With the exposure of these surfaces to the remote H₂ plasma, the CF₂? CF₂ component was predominantly modified, rather than the CH₂? CH₂ component. © 2002 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 40: 2871–2882, 2002     

Multi‐instrument characterization of the surfaces and materials in microfabricated,carbon nanotube‐templated thin layer chromatography plates. An analogy to ‘The Blind Men and the Elephant’

We apply a suite of analytical tools to characterize materials created in the production of microfabricated thin layer chromatography plates. Techniques used include X‐ray photoelectron spectroscopy (XPS), valence band spectroscopy, time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) in both positive and negative ion modes, Rutherford backscattering spectroscopy (RBS), and helium ion microscopy. Materials characterized include: the Si(100) substrate with native oxide: Si/SiO₂, alumina (35 nm) deposited as a diffusion barrier on the Si/SiO₂: Si/SiO₂/Al₂O₃, iron (6 nm) thermally evaporated on the Al₂O₃: Si/SiO₂/Al₂O₃/Fe, the iron film annealed in H₂ to make Fe catalyst nanoparticles: Si/SiO₂/Al₂O₃/Fe(NP), and carbon nanotubes (CNTs) grown from the Fe nanoparticles: Si/SiO₂/Al₂O₃/Fe(NP)/CNT. The Fe films and nanoparticles appear in an oxidized state. Some of the analyses of the CNTs/CNT forests appear to be unique: (i) the CNT forest appears to exhibit an interesting ‘channeling’ phenomenon by RBS, (ii) we observe an odd–even effect in the SIMS spectra of C_n^‐ species for n = 1 – 6, with the n ≥ 6 ions showing a steady decrease in intensity, and (iii) valence band characterization of CNTs using X‐radiation is reported. Initial analysis of the CNT forest by XPS shows that it is 100 at.% carbon. After one year, only ca. 0.25 at.% oxygen is observed. The information obtained from the combination of the different analytical tools provides a more complete understanding of our materials than a single technique, which is analogous to the story of ‘The Blind Men and the Elephant’. The raw XPS and ToF‐SIMS spectra from this study will be submitted to Surface Science Spectra for archiving. Copyright © 2013 John Wiley & Sons, Ltd.     

Surface-enhanced Raman scattering characteristics of 4-nitrobenzenethiol adsorbed on palladium and silver thin films

Palladium is an important catalytic metal, and it is desirable to develop a surface-enhanced Raman scattering (SERS) technique to investigate the reagent and product species adsorbed on its surface. Unfortunately, Pt-group metals, e.g., Pt and Pd, have been commonly considered as non- or weak-SERS-active substrates. In this work, Ag and Pd thin films were deposited very efficiently and evenly onto the surface of glass substrates by using only corresponding metal nitrate salts (AgNO₃ and Pd(NO₃)₂) with butylamine in ethanolic solutions. In this process, pure ethanol was used for Ag deposition, while an ethanol–water (8:2) mixture was used for Pd deposition. The as-prepared Ag and Pd films exhibited SERS activity over a large area. The surface-induced photoconversion capabilities of these Ag and Pd films were then tested on 4-nitrobenzenethiol by means of SERS. It was found that at least under visible laser irradiation, the surface-catalyzed photoreaction occurs more readily on a Ag film than on a Pd film for the conversion of 4-nitrobenzenethiol to 4-aminobenzenethiol, even though Pd is known to be an important transition metal with high catalytic activity.     

Formation and tribological properties of two‐component ultrathin ionic liquid films on Si

Several single‐component and two‐component imidazolium ionic liquids (ILs) ultrathin films were formed on Si substrates by a dip‐coating and heat treatment process. The formation and surface properties of the films were analyzed by means of ellipsometric thickness measurement, X‐ray photoelectron spectra and atomic force microscope. The adhesive and nanotribological behaviors of the films were evaluated by a homemade colloidal probe. A ball‐on‐plate tribometer was used to test the microtribological performances of these films. As a result, the two‐component ILs ultrathin film containing 80% solid‐like ILs phase shows more homogenous surface morphologies and optimal micro/nano‐tribological properties as compared to single‐component ILs films, which is ascribed to a synergic effect between the steady solid‐like ILs phase as the backbone and the proper amount of flowable liquid‐like ILs phase. By studying the influence of various solid/liquid ILs ratios on tribological properties of the two‐component ILs films, we might find the way to design ILs films with excellent comprehensive tribological properties. Copyright © 2010 John Wiley & Sons, Ltd.     

Electrochemical growth of CuInSe<Subscript>2</Subscript> thin film on different substrates from alkaline medium. Characterization of the films

The simultaneous electrodeposition of the system Cu–In–Se was investigated. The study was carried out at pH 8.5 using diethylentriamine as complexing agent for the Cu⁺² ion. The synthesis of CuInSe₂ semiconductor thin films was carried out by electrodeposition on different substrates [indium–tin oxide (ITO) on glass, aluminum and type 304 steel]. The simultaneous codeposition of the Cu, In, and Se was achieved by constant potential electrolysis technique in aqueous solutions containing the elements that conform this material. The deposits of CuInSe₂ were about 4 μm thick, which is thick enough for the photovoltaic effect to take place. The as-deposited films were characterized by atomic emission spectroscopy with inductive coupling plasm (AES-ICP) and scanning electronic microscopy (SEM). Annealed films were characterized X-ray diffraction, optical NIR spectroscopy, and photoelectrochemical studies The films were obtained with a well-defined composition, very close to the expected one. Homogeneous deposit with chalcopyrite structure was produced. A In₂O₃ phase was also observed. Annealing of the film improved the crystallinity of the films. Good photo response, an appropriate absorption coefficient, and a band gap of 1.09 eV were obtained.     

Studies of Cu‐doped ZnS thin films prepared by sputtering technique

Radio frequency magnetron sputtering technique has been used to deposit Cu‐doped ZnS thin films on glass and n‐type Si(100) substrates at room temperature. Crystalline structure, surface morphology, and elemental oxidation states have been studied by X‐ray diffraction, field emission scanning electron microscopy, atomic force microscopy, and X‐ray photoelectron spectroscopy. Ultraviolet–visible spectroscopy has been employed to measure the transmittance, reflectance, and absorbance properties of coated films. The deposited thin films crystallize in zinc blende or sphalerite phases as proved by X‐ray diffraction analysis. The intensity of diffraction peaks decreases with increasing the dopant concentrations. The predominant diffraction peak related to (111) plane of ZnS is observed at 28.52° along with other peaks. The peak positions are shifted to higher angles with an increase of Cu concentrations. X‐ray photoelectron spectroscopy studies show that Cu is present in +1 oxidation state. Transmittance, reflectance, and absorbance properties of the deposited films have a slight variation with dopant concentrations. Copyright © 2016 John Wiley & Sons, Ltd.