Photoemission studies of Mn/ZnO(000‐1) interface

The O‐terminated ZnO(000‐1) surface and Mn/ZnO(000‐1) interface have been investigated by synchrotron radiation photoemission spectroscopy (SRPES), low energy electron diffraction (LEED) and X‐ray photoelectron spectroscopy (XPS) systematically. Our results show that ordered O‐polar ZnO(000‐1) surface can be prepared by annealing in an oxygen ambience and this polar surface expresses good chemical stability. At room temperature, metallic Mn film is deposited onto the cleaned ZnO(000‐1)surface and grows in a layer‐by‐layer mode. During the process of Mn film deposition a downward Fermi level movement is observed, and the final resultant Schottky barrier height is 1.07 ± 0.05 eV. High temperature annealing is performed and the interfacial reaction happens evidently. The interfacial chemical reaction and the effect of interfacial dipole layer have been briefly discussed. Copyright © 2007 John Wiley & Sons, Ltd.     

Growth of cerium tungstate epitaxial layers: influence of temperature

Thin films of cerium tungstate prepared in situ by cerium deposition in oxygen atmosphere onto the W(100) single‐crystal were investigated by means of photoelectron spectroscopy and low‐energy electron diffraction (LEED). The studied temperature range was 173–1073 K. It was found that the temperature necessary for the oriented growth of Ce₆WO₁₂(100) was 673 K, and at higher temperatures, the LEED pattern improved. Photoemission data revealed the partial formation of CeO₂ on the surface at preparation temperatures below 473 K due to limited diffusion of tungsten atoms from the substrate. Copyright © 2015 John Wiley & Sons, Ltd.     

Single crystal RuO2 (110): Surface structure

The surface structure of RuO₂ (110) has been studied with LEED, AES and XPS. The “as-grown” surface shows no LEED patterns and both AES and XPS indicate that the surface is depleted in oxygen in high vacuum. After extensive annealing in an O₂ atmosphere reproducible LEED patterns characteristic of the (110) surface were obtained. For the well-ordered surface the oxygen XPS results revealed oxygen associated with the bulk RuO₂, the presence of RuO₃ and oxygen bound to surface atoms.     

Scrutinizing Defects and Defect Density of Selenium‐Doped Graphene for High‐Efficiency Triiodide Reduction in Dye‐Sensitized Solar Cells

Understanding the impact of the defects/defect density of electrocatalysts on the activity in the triiodide (I₃^?) reduction reaction of dye‐sensitized solar cells (DSSCs) is indispensable for the design and construction of high‐efficiency counter electrodes (CEs). Active‐site‐enriched selenium‐doped graphene (SeG) was crafted by ball‐milling followed by high‐temperature annealing to yield abundant edge sites and fully activated basal planes. The density of defects within SeG can be tuned by adjusting the annealing temperature. The sample synthesized at an annealing temperature of 900 °C exhibited a superior response to the I₃^? reduction with a high conversion efficiency of 8.42 %, outperforming the Pt reference (7.88 %). Improved stability is also observed. DFT calculations showed the high catalytic activity of SeG over pure graphene is a result of the reduced ionization energy owing to incorporation of Se species, facilitating electron transfer at the electrode–electrolyte interface.     

Epitaxial BaTiO3(100) films on Pt(100): a low-energy electron diffraction, scanning tunneling microscopy, and x-ray photoelectron spectroscopy study

The growth of epitaxial ultrathin BaTiO(3) films on a Pt(100) substrate has been studied by scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and x-ray photoelectron spectroscopy (XPS). The films have been prepared by radio-frequency-assisted magnetron sputter deposition at room temperature and develop a long-range order upon annealing at 900 K in O(2). By adjusting the Ar and O(2) partial pressures of the sputter gas, the stoichiometry was tuned to match that of a BaTiO(3)(100) single crystal as determined by XPS. STM reveals the growth of continuous BaTiO(3) films with unit cell high islands on top. With LEED already for monolayer thicknesses, the formation of a BaTiO(3)(100)-(1 × 1) structure has been observed. Films of 2-3 unit cell thickness show a brilliant (1 × 1) LEED pattern for which an extended set of LEED I-V data has been acquired. At temperatures above 1050 K the BaTiO(3) thin film starts to decay by formation of vacancy islands. In addition (4 × 4) and (3 × 3) surface reconstructions develop upon prolonged heating.     

Surface properties of hydrosilylated polyolefins annealed in supercritical carbon dioxide

Two hydrosilylated polyolefin compounds are obtained by reacting polypropylene (PP) and polyethylene (PE) with di‐ and multi‐functional hydride‐terminated poly(dimethylsiloxane) (dH‐PDMS and mH‐PDMS), respectively. The PDMS‐rich surface layers on these two samples show different Si concentrations but similar thicknesses. Samples of these materials are annealed in supercritical carbon dioxide (scCO₂) at various temperatures and pressures for different periods of time. On the PP/dH‐PDMS sample, an increase in the annealing temperature does not affect the Si concentration up to 120°C. However, the Si concentration is sharply reduced at T = 150°C at which point the surface appears to be covered by SiO₂ particles. Annealing the PP/dH‐PDMS sample for short times leads to submicron scale SiO₂ particle formation on the surface. The particles form aggregated clusters that spread all over the surface uniformly when the annealing time is extended. However, Si concentration on the PE/mH‐PDMS sample surface is enhanced as the annealing temperature increases, reaching a maximum at an annealing temperature of 100°C. No particle formation is observed on the PE/mH‐PDMS sample surface. The contact angle of both samples is found to increase with annealing temperature. Increasing the scCO₂ pressure leads to a higher Si concentration on the surfaces of both samples. On the other hand, increasing the CO₂ pressure leads to opposite trends in contact angle with the PP/dH‐PDMS sample exhibiting an increasing contact angle and the PE/mH‐PDMS sample exhibiting a decreasing one. Copyright © 2007 John Wiley & Sons, Ltd.     

Structural and optical properties of thin silver films deposited on Si(111)

Silver films in the thickness range 3–12 nm were deposited on very clean Si(111) substrates at ambient temperature. The annealing up to temperatures of 650?°C was then studied using LEED/Auger, SEM and X-ray diffraction as well as resistivity and ellipsometry measurements. The films crack during annealing and silver islands are formed on the silicon surface. The coagulation results in a steep drop of the ellipsometric parameters Δ and Ψ in the temperature range 150–300?°C which can be attributed to the generation of surface plasmons and Mie plasmon polaritons, respectively.     

Surface cosegregation on Fe-3%V-C, Fe-3%V-C,N and Fe-15%Cr-N (110) single crystals

Surface cosegregation has been studied on (110) oriented Fe-3%V-C, Fe-3%V-C,N and Fe-15%Cr-N single crystals applying AES and LEED. The surface compounds VC,V(C,N) and CrN are formed upon annealing in the temperature range from 450 to 750° C depending on the alloy. The stoichiometries of the binary surface compounds correspond to VC_1.2 and approximately CrN_0.8 as determined by quantitative evaluation of Auger peak height ratios. The composition of the V(C,N) surface compound varies between V(C_0.6N_0.6) at 450° C and V(C_0.2N_1.0) at 640° C. Three-dimensional precipitates are not formed as indicated by Ar⁺ depth profiling. After short annealing times streaking LEED patterns are observed indicating partial disorder in one direction of the direct space. Upon sufficient annihilation of surface defects sharp (4 × 1) patterns appear. A missing and added row model is proposed for the surface compounds on bcc(110) substrate surfaces.     

Rapid quantitative analysis of fayalite and silica formed during decarburization of electrical steel

Subscales on surfaces are affected by the temperature and oxidation potential during decarburization annealing of electrical steel containing 3 wt% silicon. Knowledge of the structural and chemical properties of the surface oxide layer subscales permits the control of high‐temperature oxidation processes in the electrical steel. In the present work, the oxide layers were characterized by transmission electron microscopy (TEM), Fourier transform infrared (FTIR) spectrometry, and glow discharge optical emission spectrometry (GD‐OES). The main oxide compounds formed within the subscales during decarburization annealing of the electrical steel were fayalite (Fe₂SiO₄) and silica (SiO₂). The fayalite and silica contents were quantitatively determined by wet analysis via the galvanostatic electrolysis method, and these oxide content measurements were compared with the fayalite content determined by FTIR spectrometry and the silica determined by GD‐OES. The results determined by rapid methods and wet analysis showed good agreement. The present findings show that FTIR spectrometry and GD‐OES measurements may be used for the rapid quantitative analysis of fayalite and silica in surface oxide layers during the manufacture of electrical steel. Copyright © 2011 John Wiley & Sons, Ltd.     

AES and LEED study of well‐ordered oxide film grown on Cu–9at.%Al(111)

An alloy of Cu–9at.%Al(111) has been oxidized in a low‐energy electron diffraction (LEED)/AES and a scanning AES instrument at elevated temperatures. Dosing with 1300 L of oxygen at 995 K gives rise to well‐ordered oxide layer formation on the Cu–9at.%Al alloy. The structure of the ordered oxide confirmed by LEED is ( ) R30°. The chemical state of the oxide was Al₂O₃. The morphology of the surface observed with SEM in the scanning AES instrument revealed flat oxide growth with triangular defects of the same orientation. The possible epitaxy between the alloy substrate and alumina layer has been discussed. Copyright © 2003 John Wiley & Sons, Ltd.     

Sputter‐deposited Ni/Ti double‐bilayer thin film and the effect of intermetallics during annealing

In the present study, a double bilayer of a Ni/Ti thin film was investigated. A nanoscale NiTi thin film is deposited in a Ni–Ti–Ni–Ti manner to form a double‐bilayer structure on a Si(100) substrate. Ni and Ti depositions were carried out by using d.c. and r.f. power, respectively, in a magnetron sputtering chamber. Four types of bilayers are formed by varying the deposition time of each layer (i.e. 15, 20, 25, and 30 min). The as‐deposited amorphous thin films were annealed at 300, 400, 500, and 600 °C for 1 h to achieve the diffusion in between the layers. Microstructures were analyzed using field‐emission scanning electron microscope and high‐resolution transmission electron microscope. It was found that, with the increase in annealing temperature from 300 to 600 °C, the diffusion at the interface and atomic migration on the surface increase. Cross‐sectional micrographs exhibited the interdiffusion between the two‐layer constituents, especially at higher temperatures, which resulted in diffusion patches along the interface. Phase analyses, performed by grazing incidence X‐ray diffraction, showed the formation of intermetallic compounds with some silicide phases that enhance the mechanical properties. Nanoindentation and atomic force microscopy were carried out to know the mechanical properties and surface profiles of the films. The surface finish is better at higher annealing temperatures. It was found that for annealing temperatures varying from 300 to 600 °C, the increase in annealing temperature resulted in a gradual increase in atomic‐cluster coarsening with improved adatom mobility. Copyright © 2016 John Wiley & Sons, Ltd.     

Development of Nonenzymatic Benzoic Acid Detection on PdSn/GCE/Vulcan XC‐72R Prepared via Polyol Method

In this study a PdSn based sensor was developed for the determination of benzoic acid (BA) in foods. A carbon (Vulcan XC‐72R) supported PdSn catalyst was prepared via polyol method and its surface electronic and chemical properties were investigated by advanced surface analytical techniques such as scanning electron microscopy (SEM), X‐ray diffraction spectroscopy (XRD), X‐ray Photoelectron Spectroscopy (XPS), temperature‐programmed reduction with H₂ (TPR‐H₂) and transmission electron microscopy (TEM). Electrochemical measurements were performed by employing cyclic voltammetry (CV) and differential pulse voltammetry (DPV) techniques on PdSn/GCE/Vulcan XC‐72R electrode. The developed sensor showed a wide linear range up to 10 mM with a 0.77 μM low limit of detection (LOD) as well as high stability. Further experiments were performed on food samples containing BA to achieve real sample measurements. For real sample measurements, PdSn/GCE/Vulcan XC‐72R electrode was used for the determination of BA in different kinds of samples such as mayonnaise, ketchup and carbonated beverages.     

Nanostructuring at the surface of low‐energy lead‐implanted silicon by electron beam annealing

Low‐energy lead ion implantation and high‐temperature electron beam annealing were used to study the potential of producing Pb nanostructures on Si. Pb⁺ ions were implanted at high dose into p‐type (100) Si to the depth of 8.0 nm. The implanted samples were annealed under high vacuum conditions with an electron beam at 200–700 °C for 15 s. Rutherford Backscattering Spectrometry (RBS) shows rapid out‐diffusion of Pb atoms above 400 °C. However, some Pb atoms are still present in the near‐surface region after annealing the implanted samples at 700 °C. Lead nanostructures were found on samples annealed above 300 °C. Annealing the samples at 450 °C causes the formation of nanostructures as tall as 4.1 ± 0.1 nm. Many of these are arranged in ‘web‐like’ strings that extend over micrometer distances. Occasionally, much larger nano‐features (as wide as 500 nm in diameter, average height of 1.5 nm) appear in the centre of the strings. Annealing samples well above the melting point of lead results in randomly distributed small nanometer‐sized Si nano‐dots. Copyright © 2008 John Wiley & Sons, Ltd.     

Cathodoluminescence study of defects in thermal treatment of zinc titanate thin films deposited by a cosputtering process

The effects of thermal treatment of polycrystalline ZnO–TiO₂ systems on their luminescence emission and phase properties were investigated using ex situ cathodoluminescence and backscattering electron microscopy. The main features of the spectrum are a blue band at 2.75 eV for the phase of TiO and a complex visible band at 2.18 eV for the phase of ZnO, whose peak intensity depends on the annealing temperature. The spectrum intensity is dominated by the ZnO phase when annealing temperature was 720°C, which is attributed to abnormal grain growth. Competition is observed between the broad band peaked at 2.18 eV and visible band peaked at 2.75 eV as the annealing temperature changed (820°C‐920°C). The cathodoluminescence density is gradually governed by the TiO₂ phase, and the emission in polychromatic and monochromatic imaging is stronger equally at 920°C. The nucleation of the TiO₂ and ZnO grains is present in the backscattering electron images as well.     

Crack‐Free Periodic Porous Thin Films Assisted by Plasma Irradiation at Low Temperature and Their Enhanced Gas‐Sensing Performance

Homogenous thin films are preferable for high‐performance gas sensors because of their remarkable reproducibility and long‐term stability. In this work, a low‐temperature fabrication route is presented to prepare crack‐free and homogenous metal oxide periodic porous thin films by oxygen plasma irradiation instead of high temperature annealing by using a sacrificial colloidal template. Rutile SnO₂ is taken as an example to demonstrate the validity of this route. The crack‐free and homogenous porous thin films are successfully synthesized on the substrates in situ with electrodes. The SnO₂ porous thin film obtained by plasma irradiation is rich in surface OH groups and hence superhydrophilic. It exhibits a more homogenous structure and lower resistance than porous films generated by annealing. More importantly, such thin films display higher sensitivity, a lower detection threshold (100 ppb to acetone) and better durability than those that have been directly annealed, resulting in enhanced gas‐sensing performance. The presented method could be applied to synthesize other metal oxide homogenous thin films and to fabricate gas‐sensing devices with high performances.     

Facetting of Fe-15% Cr-N, Fe-3% V-C and Fe-3% V-C,N (111) surfaces

Summary Auger electron spectroscopy (AES), low energy electron diffraction (LEED) and scanning electron microscopy (SEM) have been used to study the surface chemistry of crystallographically open bcc (111) surfaces of Fe-15% Cr-N, Fe-3% V-C and Fe-3% V-C,N alloys. The binary and ternary surface phases CrN, VC and V(C,N) were formed at temperatures ranging from 450 to 750°C depending on the alloy. On Fe-15% Cr-30ppmN (111) two-dimensional surface compounds CrN were formed at temperatures above 600°C according to the bulk phase diagram of the Fe-Cr-N system, whereas on Fe-15% Cr-N samples with nitrogen contents of more than about 100 ppm the precipitation of three-dimensional CrN took place at temperatures below 600°C. Optical and SEM micrographs as well as oxidation experiments at room temperature indicated that the substrate surfaces are inhomogeneously covered by the surface phases. Facetting of the bcc (111) surfaces induced both by cosegregation of the solutes and by surface precipitation was observed in real space (SEM) as well as in reciprocal space (LEED). It is shown that the surface phases are epitaxially arranged on (100) facets of the substrate.     

Characterization of the interfacial structure and perpendicular magnetic anisotropy in CoFeB‐MgO structures with different buffer layers

In this study, we describe the deposition of Hf and Mo metal layers individually on Ta to compose new buffer layers, ie, Ta/Hf and Ta/Mo, where CoFeB/MgO stacks are deposited using magnetron sputtering. The synthesised Ta/Hf buffer has higher surface roughness, while the Ta/Mo buffer has lower surface roughness as compared with the Ta buffer. The surface roughness of the buffer appears to influence the interface of the subsequently deposited layers, resulting in rougher or smoother CoFeB/MgO interfaces. Additionally, we present a report on the magnetic properties of Ta, Ta/Hf, and Ta/Mo buffer samples. As the annealing temperature is below 200 °C, the saturation magnetisation (Ms) values for all buffer layers increase at similar rates, whereas the effective magnetic anisotropy energy (K_eff) values increase at varying rates. After annealing at 350 °C, K_eff reaches its maximum value for Ta/Hf and Ta/Mo buffer layers, whereas the CoFeB/MgO interface width decreases to a minimum value. The width increases as the annealing temperature is increased over 350 °C, and K_eff gradually decreases with increase in the annealing temperature. The CoFeB/MgO interface width is primarily dependent on the buffer/CoFeB interface width, which is a critical parameter to obtain high perpendicular magnetic anisotropy (PMA) and high‐quality films. This work provides perspectives for understanding and controlling PMA from the viewpoint of interfacial structure.     

Ultrathin metals films on W(221): Structure, electronic properties and reactivity

Nanoscale pyramidal facets with (211) faces are formed when W(111) surface is covered by monolayer film of certain metals (including Pt, Pd and Au) and annealed to T ≥ 750 K. In the present work, we focus on the structure, electronic properties and reactivity of planar W(211) covered by ultrathin films of platinum and palladium. The measurements include soft X-ray photoelectron spectroscopy using synchrotron radiation, Auger electron spectroscopy, low energy electron diffraction (LEED) and thermal desorption spectroscopy. The metal film growth and evolution during annealing has been investigated for coverages ranging from 0 to 8 monolayers. The films grow initially in a layer-by-layer mode at 300 K. LEED, Auger, and Surface Core Level Shift (SCLS) measurements reveal that for coverages of one monolayer, the films are stable up to temperatures at which desorption occurs. In contrast, at higher coverages, SCLS data indicate that surface alloys are formed upon annealing films of Pt and Pd; surface alloy formation is not seen for Au overlayers. These findings are discussed in terms of structural and electronic properties of these bimetallic systems. Relevance to catalytic properties for acetylene cyclization over Pd/W(211) is also discussed.     

The interfacial properties of MgCl(2) thin films grown on Si(111)7 x 7

Photoelectron spectroscopy with synchrotron radiation and low energy electron diffraction (LEED) were used in order to study the MgCl(2)Si(111) system. At submonolayer coverage of MgCl(2), a new LEED pattern was observed corresponding to a (sqr rt 3 x sqr rt 3)R30 degrees overlayer superimposed on the underlying reconstructed Si(111)7 x 7. The surface species at this stage are mainly molecular MgCl(2) and MgCl(x) (x<2) or MgO(x)Cl(y) attached to the Si substrate through Cl bridges coexisting with monodentate SiCl. The interfacial interaction becomes more pronounced when the submonolayer coverage is obtained by annealing thicker MgCl(2) layers, whereby desorption of molecular MgCl(2) is observed leaving on the nonreconstructed silicon surface an approximately 0.2 ML thick MgCl(x) layer which again forms the (sqr rt 3 x sqr rt 3 )R30 degrees superstructure.     

My Research History on the Chemical Standpoint—From Molecular Structure to Surface Science

The structure of molecules using gas electron diffraction (GED) was my graduate study. However, I was making a new apparatus for precise measurements by GED and formulated a scheme for the least‐squares analysis for a smooth continuous curve of scattering intensity. My research was completely shifted to the solid surface after moving to Gakushuin University, where I briefly studied the liquid structure of CCl₄ molecules, and I then moved to the Institute for Solid State Physics, the University of Tokyo. My studies of surface science were focused on the electronic properties and related phenomena, and various experimental methods were developed. The plasmon dispersions elucidated the initial oxidation of aluminum and one‐dimensional metal on Si(001)2 × 1–K. Irreversible phase transition was discovered on MgO(001) using the LEED Kikuchi pattern. The electronic structure of the dislocation was observed on MgO(001) by the electron time‐of‐flight method. The phase transition on Si(001) and the rotational epitaxy in a K monoatomic layer on Cu(001) were found. Next, I changed to studies of the dynamical phenomena on the surface, where very low energy reactive ion scattering on metal surfaces and laser‐induced desorption caused by electronic transition of NO and CO molecules from metal surfaces were observed, and the hydrogen atom location at the surface and interface was measured with a high depth resolution using a resonance nuclear reaction of ¹H + ¹⁵N²⁺ at 6.385 MeV. Finally, I moved to the University of Electro‐Communications and studied thin single‐crystal oxide layers on transition metals, in which the band‐gap narrowing was found, and then a Pt monoatomic layer was prepared on the α‐Al₂O₃ film.