Determination of the cubic to hexagonal structure transition in the metastable system TiN-AlN

Structural transitions of metastable Ti_1–xAl_xN coatings on technically relevant substrates were determined as a function of the Ti/Al ratio. Ti_1–xAl_xN films with different Ti/Al ratios were deposited on high speed steel (HSS) substrates at substrate temperatures of 300?° and 500?°C by means of reactive magnetron sputtering ion plating (MSIP). A Ti/Al compound target was used as well as a cluster arrangement of one Ti and one Al target for comparison. The composition of the films was determined by electron probe microanalysis (EPMA), the crystallographic structure by thin film X-ray diffraction (XRD). The analyses revealed that films deposited with Ti/Al ratios of 44/56 and 36/64 had grown in cubic NaCl structure, a film with a Ti/Al ratio of 32/68 was two-phase, and a Ti/Al ratio of 25/75 led to a hexagonal film in wurtzite structure. Only small differences of the lattice parameters could be observed in dependence of temperature: At 300?°C the lattice parameters of the cubic structure corresponded exactly to Vegard‘s law, whereas they slightly decreased in the films deposited at 500?°C. The application of a cluster arrangement instead of a compound target resulted in nearly the same lattice parameters and peak shapes.     

Oxidation Behaviour of PACVD-(Ti,Al)N Wear Resistance Layers

 Sputtered (Ti,Al)N hard coatings are successfully used for dry high speed cutting. These films show a lower oxidation rate than TiN or TiC coatings. In our work (Ti,Al)N films were deposited on WC-6%Co substrates at a temperature of 490°C by plasma-assisted chemical vapour deposition (PACVD) using a gas mixture of TiCl₄/AlCl₃/N₂/Ar/H₂. Investigation of microstructure, crystalline structure and chemical composition was carried out using SEM, WDXS, TEM, AES and XRD techniques. The chemical composition of the deposited films showed a Al to Ti ratio of 1.33. The film thickness was 5.5 μm. Films showed a fine crystalline size, the metastable fcc crystal structure and a columnar growth. The film surface was under low compressive stress up to several 100 MPa. For (Ti,Al)N/WC-Co compounds the oxidation behaviour up to 1100°C (high temperature range) was studied. Therefore, samples were annealed or rapidly heated in air and under high vacuum condition using the laser shock method. The results show decomposition of the (Ti,Al)N structure to the TiN and the AlN phases at temperature values above 900°C. Heating in air causes growing of a thin aluminum oxide layer at the film surface, which is a barrier for further oxygen diffusion to the alumina-film boundary. Additionally, at temperatures above 900°C oxidation of the WC-6%Co substrate surface was obtained in regions of opened cracks and film delamination.     

Effect of Molybdenum (Mo) Addition on Phase Composition,Microstructure, and Mechanical Properties of Pre-Alloyed Ti6Al4V Using Spark Plasma Sintering Technique

The effect of molybdenum additions on the phases, microstructures, and mechanical properties of pre-alloyed Ti6Al4V was studied through the spark plasma sintering technique. Ti6Al4V-xMo (where x = 0, 2, 4, 6 wt.% of Mo) alloys were developed, and the sintered compacts were characterized in terms of their phase composition, microstructure, and mechanical properties. The results show that the equiaxed primary alpha and Widmänstatten (alpha + beta) microstructure in pre-alloyed Ti6Al4V is transformed into a duplex and globular model with the increasing content of Mo from 0 to 6%. The changing pattern of the microstructure of the sample strongly influences the properties of the material. The solid solution hardening element such as Mo enhances mechanical properties such as yield strength, ultimate tensile strength, ductility, and hardness compared with the pre-alloyed Ti6Al4V alloy.     

Insight into Al existing form and its role on microstructure and properties of Cr1−xAlxN films

A series of Cr_1?xAl_xN (where x denotes the atom fraction of Al in Cr_1?xAl_xN film) films with different Al contents have been deposited by unbalanced reactive magnetron sputtering technique. The chemical composition, microstructure, surface morphology, cross‐sectional structure, mechanical properties, thermal stability and tribological properties of the deposited films were studied by means of different techniques. It is found that with the increase of Al doping, the Al atoms either substitute the Cr atoms or occupy the interstitial sites in the CrN crystal lattice firstly, and when the Al doping content exceeds the solid solubility, superfluous Al atoms then exist in the form of amorphous or nanocrystal state in the films. Meanwhile, the grain size becomes smaller, and the microstructure gets denser because the Al doping leads to multiple crystal orientations and inhibits the grain growth. The Al doping induced solid solution hardening and grain boundary effects contribute to the high hardness of CrAlN films, and the dense structure as well as interstitial solid solution of Al, which can block the diffusion channel, endows the CrAlN films good oxidation resistance. Besides, a small amount of free Al existing in the films is favorable to improve the thermal stability without obvious loss of hardness. Finally, the relatively high hardness and good thermal stability make the Cr_0.29Al_0.71N film has relatively good tribological properties than CrN film under a wide temperature range, which extends the operating temperature of the CrN films in some fields. Copyright © 2015 John Wiley & Sons, Ltd.     

Preparation and Studies of ZnO:Al Films and Powders

ZnO:Al (0–10 at% Al) films and powders were produced using acac-modified methoxy-ethoxide precursors, obtained from Zn(C₂H₅)₂ and Al₄(OPr ⁱ )₁₂. The conversion to oxide powders was monitored with TGA and DSC, and the phase development was investigated with XRD, FT-IR spectroscopy, and TEM-EDS. The gels obtained by air-hydrolysis contained ca 0.5 acac/(Zn + Al) and a small amount of water and hydroxyls. All residual groups were removed to yield ZnO:Al by heating to ca 400°C. The powders obtained at 400 and 500°C were elementally homogeneous, and consisted of hex-ZnO:Al as ca 3–5 (10 at% Al) or 20–30 (3 at% Al) nm sized crystalline particles. Spin-coating on quartz, Si/SiO₂, and window glass, followed by heating to 500°C resulted in 150–200 nm thick films of hex-ZnO:Al. 500 nm thick films were obtained by repeating the deposition and heat-treatment twice. The films were visually very clear and the measured transmittance high over the 400–800 nm range (91–93% at 800 nm) for ca 300 nm thick films.     

Composition and Structure of Anodic Oxide Films on Titanium–Aluminum Alloys by Fast Electron Reflection Diffraction, Rutherford Backscattering, and Secondary Neutral Particle Mass Spectrometry

Anodic oxide films on some Ti–Al alloys are studied using fast-electron reflection diffraction, Rutherford backscattering, and secondary neutral-particle mass spectrometry. The films are amorphous, with a small amount of crystalline phases, and comprise a mixture of TiO₂ and Al₂O₃. The Ti/Al ratio in an anodic film corresponds to that in the alloy matrix. Constants of anodic oxidation of the alloys are determined.     

Effect of Annealing on the Electrical Properties of CuxS Thin Films

Copper sulphide CuS was deposited on three substrates; glass, Indium Tin Oxide (ITO) and Ti by using spray pyrolysis deposition (SPD). After depositing CuS thin films on the substrates at 200 °C, they were annealed at 50, 100, 150, and 200 °C for 1 hour. Structural measurements revealed covellite CuS and chalcocite Cu₂S phases for thin films before and after annealing at 200 °C with changes in intensities, and only covellite CuS phase for thin films after annealing at 50, 100, and 150 °C. Morphological characteristics show hexagonal-cubic crystals for the CuS thin film deposited on glass substrate and plates structures for films deposited on ITO and Ti substrates before annealing, these crystals became bigger in size and there were be oxidation and some agglomerations in some regions with formation of plates for CuS on glass substrate after annealing at 200 °C. For Hall Effect measurements, thin films sheet resistivity and mobility increased after annealing while the carrier concentration decreased. Generally, the thin film deposited on ITO substrate had the lowest resistivity and the highest carrier concentration before and after annealing. The thin film deposited on Ti substrate had the highest mobility before and after annealing, which makes it the best thin film for device performance. The objective of this research is to show the improvement of thin films electrical properties especially the mobility after annealing those thin films.     

Structural and nanomechanical properties of sol–gel prepared (K,Na)NbO3 thin films

Perovskite (K, Na)NbO₃ (KNN) thin films (~100 nm) were prepared by sol–gel/spin coating process on Pt/SiO₂/Si substrates and annealed at 650 °C. The structural properties of KNN films were confirmed by X‐ray diffraction analysis (XRD), Raman spectroscopy and scanning electron, transmission electron and atomic force microscopy (SEM, TEM and AFM) analysis. Pure perovskite phase of K_0.65Na_0.35NbO₃ in nonstoichiometric composition with monoclinic symmetry in film was revealed. Uniform homogeneous microstructure of KNN film with the roughness (~6.9 nm) contained spherical particles (~50–90 nm). Nanoindentation technique was used to characterize the mechanical properties of KNN films. Elastic modulus and hardness of Pt, SiO₂ and KNN thin films were calculated from their composite values of KNN/Pt/SiO₂/Si film/substrate system. The modulus and hardness of KNN film (71 and 4.5 GPa) were lower in comparison with SiO₂ (100 and 7.5 GPa). Pt film (~30 nm) did not influence the composite modulus, but had effect on hardness of KNN film. Copyright © 2015 John Wiley & Sons, Ltd.     

Microstructural and chemical transformation of thin Ti/Pd and TiD<Subscript><Emphasis Type="BoldItalic">y</Emphasis></Subscript>/Pd bilayer films induced by vacuum annealing

Using a combination of scanning electron microscopy, transmission electron microscopy (TEM), X-ray diffraction and X-ray photoelectron spectroscopy (XPS), we made a comparative study of the high-temperature annealing impact on thin titanium deuteride (TiD _y ) films covered by an ultrathin Pd layer, and on Ti/Pd bilayer films. The bilayer films were prepared under ultrahigh vacuum conditions and were in situ annealed using the same annealing procedure. It was found that the surface and the bulk morphology of both films undergo different annealing-induced transformations, leading to an extensive intermixing between the Ti and Pd layers and the formation of a new PdTi₂ bimetallic phase. Energy-filtered TEM imaging and energy-dispersive X-ray spectrometry analysis, as well as XPS depth profiling all provided evidence of a different distribution of Pd and Ti in the annealed TiD _y /Pd film compared with the annealed Ti/Pd film. Our results show that thermal decomposition of TiD _y , as a consequence of annealing the TiD _y /Pd film, modifies the intermixing process, thereby promoting Ti diffusion into the Pd-rich top layer of the TiD _y film and thus providing a more likely path for the formation of the PdTi₂ phase than in an annealed Ti/Pd film. Figure Figure Microstructural and chemical characterisation of thin TiDy/Pd film after annealing     

Chemical solution processing and characterization of Ba(Zr,Ti)O<Subscript>3</Subscript>/LaNiO<Subscript>3</Subscript> layered thin films

Ba(Zr,Ti)O₃/LaNiO₃ layered thin films have been synthesized by chemical solution deposition (CSD) using metal-organic precursor solutions. Ba(Zr,Ti)O₃ thin films with smooth surface morphology and excellent dielectric properties were prepared on Pt/TiO _x /SiO₂/Si substrates by controlling the Zr/Ti ratios in Ba(Zr,Ti)O₃. Chemically derived LaNiO₃ thin films crystallized into the perovskite single phase and their conductivity was sufficiently high as a thin-film electrode. Ba(Zr,Ti)O₃/LaNiO₃ layered thin films of single phase perovskite were fabricated on SiO₂/Si and fused silica substrates. The dielectric constant of a Ba(Zr_0.2Ti_0.8)O₃ thin film prepared at 700°C on a LaNiO₃/fused silica substrate was found to be approximately 830 with a dielectric loss of 5% at 1 kHz and room temperature. Although the Ba(Zr_0.2Ti_0.8)O₃ thin film on the LaNiO₃/fused silica substrate showed a smaller dielectric constant than the Ba(Zr_0.2Ti_0.8)O₃ thin film on Pt/TiO _x /SiO₂/Si, small temperature dependence of dielectric constant was achieved over a wide temperature range. Furthermore, the fabrication of the Ba(Zr,Ti)O₃/LaNiO₃ films in alternate thin layers similar to a multilayer capacitor structure was performed by the same solution deposition process.     

Effect of substrate on phase formation and surface morphology of sol-gel lead-free KNbO3, NaNbO3, and K0.5Na0.5NbO3 thin films

Environmentally acceptable lead-free ferroelectric KNbO₃ (KN) or NaNbO₃ (NN) and K_0.5Na_0.5NbO₃ (KNN) thin films were prepared using a modified sol-gel method by mixing potassium acetate or sodium acetate or both with the Nb-tartrate complex, deposited on the Pt/Al₂O₃ and Pt/SiO₂/Si substrates by a spin-coating method and sintered at 650°C. X-ray diffraction (XRD) analysis indicated that the NN and KNN films on the Pt/SiO₂/Si substrate possessed a single perovskite phase, while NN and KNN films on the Pt/Al₂O₃ substrate contained a small amount of secondary pyrochlore phase, as did KN films on both substrates. Scanning electron microscopic (SEM) and atomic force microscopic (AFM) analyses confirmed that roughness R _q of the thin KNN/Pt/SiO₂/Si film (?? 7.4 nm) was significantly lower than that of the KNN/Pt/Al₂O₃ film (?? 15 nm). The heterogeneous microstructure composed of small spherical and larger needle-like or cuboidal particles were observed in the KN and NN films on both substrates. The homogeneous microstructure of the KNN thin film on the Pt/SiO₂/Si substrate was smoother and contained finer spherical particles (?? 50 nm) than on Pt/Al₂O₃ substrates (?? 100 nm). The effect of different substrates on the surface morphology of thin films was confirmed.     

Investigation of the amorphous to crystalline phase transition of chemical solution deposited Pb(Zr0.3Ti0.7)O3 thin films by soft X-ray absorption and soft X-ray emission spectroscopy

Chemical solution deposited (CSD) complex oxide thin films attract considerable interest in various emerging fields as for example, fuel cells, ferroelectric random access memories or coated conductors. In the present paper the results of soft-X-ray spectroscopy between 280 and 560 eV on the amorphous to crystalline phase transition of ferroelectric Pb(Zr_0.3Ti_0.7)O₃ (PZT) thin films are presented. Five CSD samples derived from the same wafer coated with a PZT film pyrolyzed at 350 °C were heat treated at different temperatures between 400 and 700 °C. At first the samples were morphologically and electrically characterized. Subsequently the soft-X-ray absorption and emission experiments were performed at the undulator beamline 8.0 of the Advanced Light Source of the Lawrence Berkeley National Laboratory. Soft-X-ray absorption spectra were acquired for the Ti L _2,3-, O K-, and C K-edge thresholds by using simultaneously the total electron yield (TEY) and total fluorescence yield (TFY) detection methods. For two samples, annealed at 400 and 700 °C, respectively, the resonant inelastic soft-X-ray spectroscopy (RIXS) was applied for various excitation energies near the Ti L-, O K-edges. We observed clear evidence of a rutile phase at untypically low temperatures. This rutile phase transforms into the perovskite phase upon increasing annealing temperature. These results are discussed in the framework of current microscopic models of the PZT (111) texture selection.     

The structure and tribological properties of aluminum/carbon nanocomposite thin films synthesized by reactive magnetron sputtering

Hydrogenated nanocomposite aluminum/carbon thin films (Al/a‐C:H) were fabricated on stainless steel and silicon wafer substrates via unbalanced reactive magnetron sputtering from an Al target in CH₄/Ar plasma. The composition and structure of Al/a‐C:H films were investigated by high‐resolution transmission electron microscope (HRTEM), XPS and micro‐Raman spectroscopy. Nanoindenter, interferometer and ball‐on‐disc tribometer were carried out to evaluate the hardness, internal stress and tribological properties of Al/a‐C:H films. HRTEM observations confirmed that the metallic Al nanocrystallites were uniformly dispersed in the amorphous carbon matrix. XPS and Raman analyses indicated that the sp² content increased with the increase of Al content in the films. Nanoindenter and interferometer tests exhibited that the uniform incorporation of Al nanocrystallites can diminish drastically the magnitude of internal stress with maintaining the higher hardness of as‐deposited films. Especially, the ball‐on‐disc tribometer measurements revealed that the nanocomposite film with 2.3 at.% Al content exhibited relatively better wear resistance and self‐lubrication performance with a friction coefficient of 0.06 and wear rate of 3.1 × 10^?16 m³/ N·m under ambient air, which can be attributed to the relatively higher hardness, the formation of continuous graphitized transfer film on counterface and the reduced reaction of oxygen with carbon. Copyright © 2010 John Wiley & Sons, Ltd.     

Preparation of nanostructured titania thin films by sol–gel technology

This study is concerned with the preparation of hydrolytically active heteroligand complex [Ti(OC₄H₉)_3.61(O₂C₅H₇)_0.39] from titanium butoxide and acetylacetone and with the gel formation kinetics in a solution of this complex upon hydrolysis and polycondensation. Single-layer and double-layer thin films of a solution of this precursor were coated on polished silicon substrates using the dip-coating method. The crystallization of nanostructured titania films during the heat treatment of these xerogel coatings was studied using various protocols; the anatase–rutile phase transition temperature was found to depend on the film thickness. The effects of the precursor solution viscosity on the film thickness and crystallite size were determined.     

Influence of thermal annealing on the microstructure,hardness and corrosion behavior of TiAlSiCuN nanocomposite films

Nanocomposite TiAlSiCuN films were deposited on high speed steels by filtered magnetic arc ion plating. Detailed properties of the films annealed at various temperatures are studied. After thermal annealing at different temperatures ranging from 400 to 800 °C, changes in the film micro‐structure, chemical and phase composition, surface morphology, hardness and polarization curve properties were systematically characterized by X‐ray diffraction, X‐ray photoelectron spectroscopy, scanning electron microscopy, nano‐indenter and electrochemical workstation, respectively. It was found that the TiAlSiCuN films could be fully oxidized at 800 °C, Al and Ti atoms all diffused outwards and formed dense protective Al₂O₃ and TiO₂ layer. Simultaneously, the TiAlN phase gradually disappeared. The films annealed at 400 °C obtained the highest hardness because of the certain grain growth and little generated oxides. Besides, the certain formation of dense protective Al₂O₃ layer made the TiAlSiCuN film annealed at 600 °C present the least corrosion current density and the corrosion voltage. Copyright © 2016 John Wiley & Sons, Ltd.     

Electro-less plating nickel-phosphorus of low carbon steel using various pretreatments and an external magnetic field

Electro-less plating nickel-phosphorus (EPNP) subject to various pretreatments and an external magnetic field, are prepared onto low carbon steel (LCS). The surface hardness (SH), fatigue life (FL) and corrosion behavior (CB) of Ni-P coated are respectively obtained using a nano-indenter and a high strain low cycle fatigue life (HSLCFL) and polarization test. The experimental outcome reveals that LCS substrates that are pretreated using the proposed acid mixture (25% H₂SO₄ + 5% HCl) roughening and activation allow good Ni-P films to be deposited. In terms of EPNP, as the P content decreases, the SH and FL increase. Specimens that a coated in a Ni–P film using an external magnetic field have better mechanical performance than those that are not produced in an external magnetic field. As the external magnetic field intensity is increased, the film thickness, SH and FL increase, the concentration of P decreases and thin grains are formed on the film surface. The specimens without using an external magnetic field that are coated with a Ni–P film exhibit better resistance to corrosion than the uncoated sample of LCS. However, the Ni–P film that is coated using an external magnetic field has higher SH, so it exhibits increased resistance to corrosion.     

SEM and AES depth profile studies of thin titanium and titanium oxide films covered by nanoscale evaporated Au layers

Thin titanium and titanium oxide films, both covered by ultra-thin gold layers, have been compared with titanium films after analysis, using a combination of SEM and AES. The Ti films were prepared under UHV conditions by evaporation on a glass substrate. The Ti oxide layers were prepared in situ by precisely controlled oxygen sorption at 298 K on Ti film. Both Ti and Ti oxide films were then covered in situ by a very thin Au layer. Analysis was performed in a separate system after long-term exposure of the films to air. SEM analysis revealed a much smaller size grain on the Au coated Ti films than on Ti films not coated with a Au layer. The thin gold layers covering the Ti surface prevent an extensive air interaction with Ti film. The analysis of the features of the Ti Auger spectra during the sputter profile measurements allow to characterise the chemical nature of Ti-oxide formed in Ti/Au interface region. Received: 7 September 1998 / Revised: 14 January 1999 / Accepted: 2 February 1999     

A Novel Approach by Spark Plasma Sintering to the Improvement of Mechanical Properties of Titanium Carbonitride-Reinforced Alumina Ceramics

Ti(C,N)-reinforced alumina-zirconia composites with different ratios of C to N in titanium carbonitride solid solutions, such as Ti(C_0.3,N_0.7) (C:N = 30:70) and Ti(C_0.5,N_0.5) (C:N = 50:50), were tested to improve their mechanical properties. Spark plasma sintering (SPS) with temperatures ranging from 1600 °C to 1675 °C and pressureless sintering (PS) with a higher temperature of 1720 °C were used to compare results. The following mechanical and physical properties were determined: Vickers hardness, Young’s modulus, apparent density, wear resistance, and fracture toughness. A composite with the addition of Ti(C_0.5,N_0.5)n nanopowder exhibited the highest Vickers hardness of over 19.0 GPa, and its fracture toughness was at 5.0 Mpa·m^1/2. A composite with the Ti(C_0.3,N_0.7) phase was found to have lower values of Vickers hardness (by about 10%), friction coefficient, and specific wear rate of disc (Ws_d) compared to the composite with the addition of Ti(C_0.5,N_0.5). The Vickers hardness values slightly decreased (from 5% to 10%) with increasing sintering temperature. The mechanical properties of the samples sintered using PS were lower than those of the samples that were spark plasma sintered. This research on alumina–zirconia composites with different ratios of C to N in titanium carbonitride solid solution Ti(C,N), sintered using an unconventional SPS method, reveals the effect of C/N ratios on improving mechanical properties of tested composites. X-ray analysis of the phase composition and an observation of the microstructure was carried out.     

Synthesis and characterization of Ti and N binary‐doped ɑ‐C films deposited by pulse cathode arc with ionic source assistant

Using ionic source assistant, Ti and N co‐doped amorphous C (α‐C:N:Ti) thin films were prepared by pulse cathode arc technique. Microstructure, composition, elemental distribution, morphology, and mechanical properties of α‐C:N:Ti films were investigated in dependence of nitrogen source, pulse frequency, and target current by Raman spectroscopy, X‐ray diffraction, scanning electron microscopy, X‐ray photoelectron spectroscopy, atomic force microscopy, nanoindentation, and surface profilometer. The results show the presence of titanium carbide and nitride in a‐C:N:Ti films. The α‐C:N⁺:Ti film (6 Hz, 60 A) shows the smaller size and the higher disordering degree of Csp² clusters. The α‐C:N⁺:Ti films present smoother surface and smaller particle size than for α‐C:N₂:Ti films. N ions facilitate the formation of N‐sp³C bonds in the α‐C:N⁺:Ti films, and α‐C:N⁺:Ti (10 Hz, 80 A) film possesses the more graphite‐like N bonds. Higher hardness and lower residual stress present in the α‐C:N₂:Ti (10 Hz, 80 A) film.     

Combinatorial study of WInZnO films deposited by rf magnetron co-sputtering

The compositional dependence of co-sputtered tungsten indium zinc oxide (WInZnO) film properties was first investigated by means of a combinatorial technique. Indium zinc oxide (IZO) and WO₃ targets were used with different target power. W composition ratio [W/(In+Zn+W)] was varied between 3 and 30 at% and film thickness was reduced as the sample position moved toward WO₃ target. Furthermore, the optical bandgap energy increased gradually, which might be affected by the reduction in film thickness. All the WInZnO films showed an amorphous phase regardless of the W/(In+Zn+W) ratio. As the W/(In+Zn+W) ratio in WInZnO films increased, the carrier concentration was restricted, causing the increase in electrical resistivity. W cations worked as oxygen binders in determining the electronic properties, resulting in suppressing the formation of oxygen vacancies. Consequentially, W metal cations were effectively incorporated into the WInZnO films as a suppressor against the oxygen vacancies and the carrier generation by employing the combinatorial technique.