在HT-7托卡马克上密度扫描实验中的边界湍流和输运

在HT-7托卡马克上密度扫描实验中使用一个快速扫描气动朗缪尔探针来研究边界湍流和输运。随着中心弦平均等离子体密度的增加，在等离子体边界观察到径向电场剪切增强，径向电场的增强能够解释边界输运的减小和全局粒子约束的改善。粒子约束时间的增加和垂直扩散系数的减小证明粒子输运降低了。在等离子体边界区域发现电离和辐射驱动湍流的特征，表明电离和辐射在湍流驱动过程中具有重要性。     

Superconductivity in CuIr2-xAlxTe4 telluride chalcogenides

The relationship between charge-density-wave (CDW) and superconductivity (SC), two vital physical phases in condensed matter physics, has always been the focus of scientists' research over the past decades. Motivated by this research hotspot, we systematically studied the physical properties of the layered telluride chalcogenide superconductors CuIr$_{2-x}$Al$_{x}$Te$_{4}$ ($0 \leqslant x \leqslant 0.2$). Through the resistance and magnetization measurements, we found that the CDW order was destroyed by a small amount of Al doping. Meanwhile, the superconducting transition temperature ($T_{\rm c}$) kept changing with the change of doping amount and rose towards the maximum value of 2.75 K when $x=0.075$. The value of normalized specific heat jump ($\Delta C/\gamma T_{\rm c}$) for the highest $T_{\rm c}$ sample CuIr$_{1.925}$Al$_{0.075}$Te$_{4}$ was 1.53, which was larger than the BCS value of 1.43 and showed the bulk superconducting nature. In order to clearly show the relationship between SC and CDW states, we propose a phase diagram of $T_{\rm c}$ vs. doping content.     

Study of impurity behaviour in non-coronal equilibrium state

A physical model of analysing the behaviour of impurities out of coronal equilibrium in tokamak plasmas has been proposed. Through solving the time-dependent rate equations including the effects of atomic processes and the particle transport losses, the ionization state distribution is obtained for a range of low Z impurities such as helium, carbon, oxygen and argon. By using the ionization state distribution of these impurities, the radiation rate coefficients and the mean charge state changing with plasma temperature are calculated. The results show that the mean charge state （Z） is sensitively dependent on the parameter neT, and this is the reason why the radiation power of impurities under non-coronal equilibrium conditions is several orders of magnitude higher than that under coronal equilibrium condition.[第一段]     

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为进一步提高HL-2A装置的放电参数和优化等离子体位形，给出了三种可能的主机改造途径：保留真空室，去掉并调整真空室内部分多极场线圈的局部改造方案；保留真空室，重新布局极向场线圈的中等规模改造方案；重新设计真空室和极向场线圈系统的大规模改造方案。对三种改造方案对放电参数和位形的影响和改造工程的可行性进行了分析比较，重新设计真空室和极向场线圈系统的大规模改造方案是最佳选择。     

Effect of substrate temperature on the growth and properties of boron-doped microcrystalline silicon films

Highly conductive boron-doped hydrogenated microcrystalline silicon (\mu c-Si:H) films are prepared by very high frequency plasma enhanced chemical vapour deposition (VHF PECVD) at the substrate temperatures $T_{\rm S})$ ranging from 90$^\circ$C to 270$^\circ$C. The effects of $T_{\rm S}$ on the growth and properties of the films are investigated. Results indicate that the growth rate, the electrical (dark conductivity, carrier concentration and Hall mobility) and structural (crystallinity and grain size) properties are all strongly dependent on $T_{\rm S}$. As $T_{\rm S}$ increases, it is observed that 1) the growth rate initially increases and then arrives at a maximum value of 13.3 nm/min at $T_{\rm S}$=210$^\circ$C, 2) the crystalline volume fraction ($X_{\rm c})$ and the grain size increase initially, then reach their maximum values at $T_{\rm S}$=140$^\circ$C, and finally decrease, 3) the dark conductivity ($\sigma _{\rm d})$, carrier concentration and Hall mobility have a similar dependence on $T_{\rm S}$ and arrive at their maximum values at $T_{\rm S}$=190$^\circ$C. In addition, it is also observed that at a lower substrate temperature $T_{\rm S}$, a higher dopant concentration is required in order to obtain a maximum $\sigma _{\rm d}$.     

Computational Study of MHD Equilibrium of Noncircular Tokamak Reactor Plasmas

The MHD equilibrium and stability of noncircular tokamak plasmas limited by a separatrix is studied for reactor size systems. A typical example with a plasma current of 15.8 MA and major radius of 8.1 is presented. The required vertical field is generated by a set of discrete external coils and no conducting shell is included. The detailed equilibrium shape is calculated numerically for a vertical elongated plasma with two stagnation points symmetrically located above and below the midplane as would be required for a system with a poloidal divertor. The plasma height to width ratio is 2, the plasma shape factor is 1.6 and poloidal ? is 2.2. The plasma is locally stable. The general stability criteria with respect to quasi-rigid motions (special kink modes) are calculated numerically and found to be satisfied. Size scaling and the engineering constraints are discussed.     

Superconducting properties of the C15-type Laves phase ZrIr2 with an Ir-based kagome lattice

We report systematic studies on superconducting properties of the Laves phase superconductor ZrIr$_2$. It crystallizes in a C15-type (cubic MgCu$_2$-type, space group $Fd\overline{3}m$) structure in which the Ir atoms form a kagome lattice, with cell parameters $a=b=c=7.3596(1)$ Å. Resistivity and magnetic susceptibility measurements indicate that ZrIr$_2$ is a type-II superconductor with a transition temperature of 4.0 K. The estimated lower and upper critical fields are 12.8 mT and 4.78 T, respectively. Heat capacity measurements confirm the bulk superconductivity in ZrIr$_2$. ZrIr$_2$ is found to possibly host strong-coupled s-wave superconductivity with the normalized specific heat change $\Delta C_{\rm e}/\gamma T_{\rm c} \sim 1.86$ and the coupling strength $\Delta_0/k_{\rm B}T_{\rm c} \sim 1.92$. First-principles calculations suggest that ZrIr$_2$ has three-dimensional Fermi surfaces with simple topologies, and the states at Fermi level mainly originate from the Ir-5d and Zr-4d orbitals. Similar to SrIr$_2$ and ThIr$_2$, spin--orbit coupling has dramatic influences on the band structure in ZrIr$_2$.     

The transfer of the quantum correlation from two-mode nonclassical state field to the supercurrents in two distant SQUID rings

We have considered two distant mesoscopic superconducting quantum interference device (SQUID) rings A and B in the presence of two-mode nonclassical state fields and investigated the correlation of the supercurrents in the two rings using the normalized correlation function $C_{\rm AB}$. We show that when the parameter $\alpha$ is very small for the separable state with the density matrix $\hat {\rho } = (\left| {\alpha , - \alpha } \right\rangle \left\langle {\alpha , - \alpha } \right| + \left| { - \alpha ,\alpha } \right\rangle \left\langle { - \alpha ,\alpha } \right|) / 2$ and entangled coherent state (ECS) $\left| u \right\rangle = N_1 (\left| {\alpha , - \alpha } \right\rangle + \left| { - \alpha ,\alpha } \right\rangle )$ fields, the dynamic behaviours of the normalized correlation function $C_{\rm AB}$ are similar, but it is quite different for the entangled coherent state $\left| {u}' \right\rangle = N_2 (\left| {\alpha , - \alpha } \right\rangle - \left| { - \alpha ,\alpha } \right\rangle )$ field. When the parameter $\alpha $ is very large, the dynamic behaviours of $C_{\rm AB}$ are almost the same for the separable state, entangled coherent state $\left| u \right\rangle $ and $\left| {u}' \right\rangle $ fields. For the two-mode squeezed vacuum state field the maximum of $C_{\rm AB}$ increases monotonically with the squeezing parameter $r$, and as $r \to \infty $, $C_{\rm AB} \to 1$. This means that the supercurrents in the two rings A and B are quantum mechanically correlated perfectly. It is concluded that not all the quantum correlations in the two-mode nonclassical state field can be transferred to the supercurrents; and the transfer depends on the state of the two-mode nonclassical state field prepared.     

The effects of interstitial oxygen on superconducting electronic phases in strontium and oxygen co-doped La1.937Sr0.063CuO4＋δ

Strontium and oxygen co-doped La1.937Sr0.063CuO4＋δ superconductor with Tc≈ 40K, which is obtained by oxidizing strontium-doped starting ceramic sample La1.937Sr0.063CuO4 in NaC10 solution, is annealed under different conditions to allow interstitial oxygen to redistribute. The evolution of the intrinsic superconducting property with the oxygen redistribution is studied in detail by magnetic measurements in various fields. It is found that there occurs the electronic phase separation from the single superconducting phase with Tc ≈ 40 K into two coexisting superconducting states with values of Tc： 15 and 40K or of 15 and 35 K in this system, depending on annealing condition. Our results indicate that the 15, 35 and 40 K superconducting phases associated with the excess oxygen redistribution are all thermodynamically meta-stable intrinsic states in this Sr/O co-doped cuprate.     

HL-2A单零偏滤器的位形特征

利用积分方法对多种电流剖面下HL2A装置单零偏滤器位形特征进行了计算研究。积分方法的优点是可以在任意电流剖面下求解具有X-点的自由边界的Grad-Shafranov方程。对HL2A装置而言,大体上可以在合理设定的分界面形状下,经几次叠代计算出各组极向场线圈(垂直场,三对多极场和多极补偿场以及水平场)中的电流。HL-2A的单零偏滤器位形基本上是圆截面加上在X-点附近的局部形变。对刮离区和偏滤器靶板区磁力线特性进行了分析以确定偏滤器的品质。     

Study of the FCNH Coupling with Boosted Higgs at LHC*

We present a study about the flavor changing coupling of the top quark with the Higgs boson through the channel $pp\to H t/\bar{t}$ with $H\to b\bar{b}$ at LHC. The final states considered for the such process are $l^\pm+\mathbb{E}_{T}+3b$. We focus on the boosted region in the phase space of the Higgs boson. The backgrounds and events are simulated and analyzed. The sensitivities for the FCNH couplings are estimated. It is found that it is more sensitive for $y_{\rm tu}$ than $y_{\rm tq}$ at LHC. The upper limits of the FCNH couplings can be set at LHC with 3000 ${\rm fb}^{-1}$ integrated luminosity as $\vert y_{\rm tu}\vert^2=1.1\times10^{-3}$ and $\vert y_{\rm tc}\vert^2=7.2\times 10^{-3}$ at 95% C.L.     

托卡马克极向场线圈的优化方法

托卡马克等离子体的三角形变和拉长比对约束和磁流体稳定性有很强的影响，因此在托卡马克装置极向场设计中，在基于物理和工程考虑所预先选定的等离子体平衡位形几何参数下，如何优化确定外部极向场线圈位置和电流，是一个具有重要实际意义的研究课题.为优化确定托卡马克极向场线圈，给出了一个有效的多变量平衡优化方法，能以事先规定的等离子体平衡位形的一些几何参数为目标函数，优化确定极向场线圈位置和电流.并应用它于HT-7U平衡位形计算，得到了所需的结果. 关键词： 等离子体平衡 极向场线圈 优化     

Generation of Schrodinger cat state of a single trapped cold ion

The fidelity of the generated Schrdinger Cat state(SCS) of a single trapped ion in the Lamb-Dicke approximation is discussed.The results show that the fidelity significantly decreases with the values of Lamb-Dicke parameter η and coherent state amplitude α increasing.For η = 0.20 and α = 3,the typical values of experimental parameters,the fidelity is rather low(30%).A scheme for generating the SCS is proposed without making the Lamb-Dike approximation in laser-ion interaction,and the fidelity of the generated SCS is about 99% for the typical values of experimental Lamb-Dicke parameters.     

Deposition and characterization of YBCO/CeO2/YSZ/CeO2 multilayers on biaxially textured Ni substrates

CeO2/YSZ/CeO2 buffer layers were deposited on biaxially textured Ni substrates by pulsed laser deposition. The influence of the processing parameters on the texture development of the seed layer CeO2 was investigated. Epitaxial films of YBCO were then grown in situ on the CeO2/YSZ （yttria-stabilized ZrO2）/CeO2-buffered Ni substrates. The resulting YBCO conductors exhibited self-fleld critical current density Jc of more than 1 MA/cm^2 at 77K and superconducting transition temperature Tc of about 91K.     

用H-W-ECR CVD系统实现氢化非晶硅薄膜在氢气环境下同时进行化学热退火和光诱导退火的研究

为了研究氢化非晶硅薄膜的稳定性，我们设计了一个在原子氢气氛中热退火的同时进行光诱导退火的实验(TLAH)。实验装置是由传统的微波电子回旋共振化学气相沉积系统改造而成为热丝辅助微波电子回旋共振化学气相沉积系统。为了对这一退火方法进行比较，对样品还进行了热退火、热退火同时进行光诱导退火。同时，为了定量地分析光电导衰退，我们假设光电导衰退遵循扩展指数规律：1/σph=1/σs-(1/σs-1/σ0)exp[-(t/τ)β]，这里扩展指数参数β 和时间常数 τ 可从与 lnt 的线性关系中截距和斜率得到, 式中光电导饱和值σs可以通过在对数坐标系中表示的光电导和光照时间关系进行高斯拟合得到。实验结果显示：TLAH 方法可以提高氢化非晶硅薄膜的稳定性、改善其微结构和光电特性，同时还发现，光学带隙明显减小、荧光光谱显著地朝着低能方向移动。     

Magnetic field induced phase branches of the superconducting transition in two-dimensional square π-loop arrays

Based on the results of explicit forms of free energy density for each possible arrangement of magnetization fluxes in large-scale two-dimensional （2D） square π-loop arrays given by Li et al [2007 Chin. Phys. 16 1450], the field-cooled superconducting phase transition is further investigated by analysing the free energy of the arrays with a simplified symmetrical model. Our analytical result is exactly the same as that obtained in Li＇s paper by means of numerical calculations. It is shown that the phase transition splits into two branches with either ferromagnetic or anti-ferromagnetic flux ordering, which depends periodically on the strength of external magnetic flux φe through each loop and monotonically on the screen parameter β of the loops in the arrays. In principle, the diagram of the phase branches is similar to that of its one-dimensional counterpart. The influence of thermal fluctuation on the flux ordering during the transition from normal to superconducting states of the π-loop arrays is also discussed.     

Magnetic field induced phase branches of the superconducting transition in two-dimensional square π-loop arrays

Based on the results of explicit forms of free energy density for each possible arrangement of magnetization fluxes in large-scale two-dimensional (2D) square $\pi $-loop arrays given by Li \textit{et al} [2007 {\em Chin. Phys.} {\bf 16} 1450], the field-cooled superconducting phase transition is further investigated by analysing the free energy of the arrays with a simplified symmetrical model. Our analytical result is exactly the same as that obtained in Li's paper by means of numerical calculations. It is shown that the phase transition splits into two branches with either ferromagnetic or anti-ferromagnetic flux ordering, which depends periodically on the strength of external magnetic flux $\phi_{\e}$ through each loop and monotonically on the screen parameter $\beta $ of the loops in the arrays. In principle, the diagram of the phase branches is similar to that of its one-dimensional counterpart. The influence of thermal fluctuation on the flux ordering during the transition from normal to superconducting states of the $\pi $-loop arrays is also discussed.     

The role of hydrogen in hydrogenated microcrystalline silicon film and in deposition process with VHF-PECVD technique

The role of hydrogen in hydrogenated microcrystalline silicon ($\mu $c-Si:H) thin films in deposition processes with very high frequency plasma-enhanced chemical vapour deposition (VHF-PECVD) technique have been investigated in this paper. With \textit{in situ} optical emission spectroscopy (OES) diagnosis during the fabrication of $\mu $c-Si:H thin films under different plasma excitation frequency $\nu _{\rm e }$ (60MHz--90MHz), the characteristic peak intensities ($I_{{\rm SiH}^*}$, $I_{{\rm H}\alpha^*}$ and $I_{{\rm H}\beta ^*}$) in SiHVHF-PECVD技术 氢化微晶硅 光发射光谱 薄膜学VHF-PECVD technique, hydrogenated microcrystalline silicon, role of hydrogen, optical emission spectroscopyProject supported by the Natural Science Foundation of Guangdong Province, China (Grant No 05300378), the State Key Development Program for Basic Research of China (Grant Nos G2000028202 and G2000028203) and the Program on Natural Science of Jinan University, Guangzhou, China (Grant No 51204056).2005-11-252005-11-252006-01-05The role of hydrogen in hydrogenated microcrystalline silicon （μc-Si：H） thin films in deposition processes with very high frequency plasma-enhanced chemical vapour deposition （VHF-PECVD） technique have been investigated in this paper. With in situ optical emission spectroscopy （OES） diagnosis during the fabrication of μc-Si：H thin films under different plasma excitation frequency Ve （60MHz-90MHz）, the characteristic peak intensities （IsiH＊, IHα＊ and IHβ＊ ） in SiH4＋H2 plasma and the ratio of （IHα＊ ＋ IHβ＊ ） to IsiH＊ were measured; all the characteristic peak intensities and the ratio （IHα＊ ＋ IHβ＊ ）/IsiH＊ are increased with plasma excitation frequency. It is identified that high plasma excitation frequency is favourable to promote the decomposition of SiH4＋H2 to produce atomic hydrogen and SiHx radicals. The influences of atomic hydrogen on structural properties and that of SiHx radicals on deposition rate of μc-Si：H thin films have been studied through Raman spectra and thickness measurements, respectively. It can be concluded that both the crystalline volume fraction and deposition rate are enhanced with the increase of plasma excitation frequency, which is in good accord with the OES results. By means of FTIR measurements, hydrogen contents of μc-Si：H thin films deposited at different plasma excitation frequency have been evaluated from the integrated intensity of wagging mode near 640 cm^-1. The hydrogen contents vary from 4% to 5%, which are much lower than those of μc-Si：H films deposited with RF-PECVD technique. This implies that μc-Si：H thin films deposited with VHF-PECVD technique usually have good stability under light-soaking.     

Central black hole mass determination for blazars

In this paper, we use a method to determine some basic parameters for the $\gamma$-ray loud blazars. The parameters include the central black mass ($M$), the boosting factor ($\delta$), the propagation angle (${\it {\it\Phi}}$), the distance along the axis to the site of the $\gamma$-ray production ($d$). A sample including 32 $\gamma$-ray loud blazars with available variability time scales has been used to discuss the above properties. In this method, the $\gamma$-ray energy, the emission size and the property of the accretion disc determine the absorption effect. If we take the intrinsic $\gamma$-ray luminosity to be $\lambda$ times the Eddington luminosity, i.e. $L_{\gamma}^{\rm in}=\lambda{L_{\rm Edd}}$, then we have the following results: the mass of the black hole is in the range of $(0.59-67.99)\times10^{7}M_{\odot} \ (\lambda=1.0)$ or $(0.90-104.13)\times10^{7}M_{\odot} \ (\lambda=0.1)$; the boosting factor ($\delta$) in the range of In this paper, we use a method to determine some basic parameters for the $\gamma$-ray loud blazars. The parameters include the central black mass ($M$), the boosting factor ($\delta$), the propagation angle (${\it {\it\Phi}}$), the distance along the axis to the site of the $\gamma$-ray production ($d$). A sample including 32 $\gamma$-ray loud blazars with available variability time scales has been used to discuss the above properties. In this method, the $\gamma$-ray energy, the emission size and the property of the accretion disc determine the absorption effect. If we take the intrinsic $\gamma$-ray luminosity to be $\lambda$ times the Eddington luminosity, i.e. $L_{\gamma}^{\rm in}=\lambda{L_{\rm Edd}}$, then we have the following results: the mass of the black hole is in the range of $(0.59-67.99)\times10^{7}M_{\odot} \ (\lambda=1.0)$ or $(0.90-104.13)\times10^{7}M_{\odot} \ (\lambda=0.1)$; the boosting factor ($\delta$) in the range of In this paper, we use a method to determine some basic parameters for the $\gamma$-ray loud blazars. The parameters include the central black mass ($M$), the boosting factor ($\delta$), the propagation angle (${\it {\it\Phi}}$), the distance along the axis to the site of the $\gamma$-ray production ($d$). A sample including 32 $\gamma$-ray loud blazars with available variability time scales has been used to discuss the above properties. In this method, the $\gamma$-ray energy, the emission size and the property of the accretion disc determine the absorption effect. If we take the intrinsic $\gamma$-ray luminosity to be $\lambda$ times the Eddington luminosity, i.e. $L_{\gamma}^{\rm in}=\lambda{L_{\rm Edd}}$, then we have the following results: the mass of the black hole is in the range of $(0.59-67.99)\times10^{7}M_{\odot} \ (\lambda=1.0)$ or $(0.90-104.13)\times10^{7}M_{\odot} \ (\lambda=0.1)$; the boosting factor ($\delta$) in the range of In this paper, we use a method to determine some basic parameters for the $\gamma$-ray loud blazars. The parameters include the central black mass ($M$), the boosting factor ($\delta$), the propagation angle (${\it {\it\Phi}}$), the distance along the axis to the site of the $\gamma$-ray production ($d$). A sample including 32 $\gamma$-ray loud blazars with available variability time scales has been used to discuss the above properties. In this method, the $\gamma$-ray energy, the emission size and the property of the accretion disc determine the absorption effect. If we take the intrinsic $\gamma$-ray luminosity to be $\lambda$ times the Eddington luminosity, i.e. $L_{\gamma}^{\rm in}=\lambda{L_{\rm Edd}}$, then we have the following results: the mass of the black hole is in the range of $(0.59-67.99)\times10^{7}M_{\odot} \ (\lambda=1.0)$ or $(0.90-104.13)\times10^{7}M_{\odot} \ (\lambda=0.1)$; the boosting factor ($\delta$) in the range of In this paper, we use a method to determine some basic parameters for the $\gamma$-ray loud blazars. The parameters include the central black mass ($M$), the boosting factor ($\delta$), the propagation angle (${\it {\it\Phi}}$), the distance along the axis to the site of the $\gamma$-ray production ($d$). A sample including 32 $\gamma$-ray loud blazars with available variability time scales has been used to discuss the above properties. In this method, the $\gamma$-ray energy, the emission size and the property of the accretion disc determine the absorption effect. If we take the intrinsic $\gamma$-ray luminosity to be $\lambda$ times the Eddington luminosity, i.e. $L_{\gamma}^{\rm in}=\lambda{L_{\rm Edd}}$, then we have the following results: the mass of the black hole is in the range of $(0.59-67.99)\times10^{7}M_{\odot} \ (\lambda=1.0)$ or $(0.90-104.13)\times10^{7}M_{\odot} \ (\lambda=0.1)$; the boosting factor ($\delta$) in the range of $0.16-2.09(\lambda=1.0)$ or $0.24-2.86\ (\lambda=0.1)$; the angle (${\it\Phi}$) in the range of $9.53^{\circ}-73.85^{\circ}\ (\lambda=1.0)$ or $7.36^{\circ}-68.89^{\circ}\ (\lambda=0.1)$; and the distance ($d/R_{\rm g}$) in the range of $22.39-609.36\ (\lambda=1.0)$ or $17.54-541.88\ (\lambda=0.1)$.     

全超导托卡马克极向场超导线圈的失超检测

EAST装置做为全超导托卡马克装置,其纵场和极向场线圈全部由超导磁体组成,所以进行安全,准确,有效的超导线圈的失超保护是装置安全运行的首要环节.由于等离子体电流的建立必须由极向场线圈系统提供极快速的磁通变化,随之产生较高的交流损耗使得极向场线圈很容易发生失超.如何对快速交变脉冲磁场下的超导线圈进行有效的失超检测,这在世界上也无先例可循.EAST装置的失超检测系统经过几十轮单饼超导线圈实验及多轮装置正式放电实验后逐步建立和完善起来,并已通过工程验收满足了装置实验运行要求.本文主要介绍了EAST装置失超检测系统的基本结构和检测原理,重点阐述了极向场超导磁体失超检测的设计方法及实验结果。