单层SiO2物理膜与化学膜激光损伤机理的对比研究

采用离子束溅射沉积技术和溶胶-凝胶技术在K9基片上镀制了厚度相近的SiO2单层介质膜,用表面热透镜技术对两类膜层分别进行了热吸收及实时动态热畸变实验测试,结合散射光阈值测试及实验前后膜层的显微观测,对相同基底、相同膜层材料而采用不同方法镀制的光学膜层,发现化学膜的强激光损伤阈值远高于相应物理膜;从热力学响应及膜层特性差异的角度揭示了化学膜层的强激光损伤阈值远高于相应物理膜层的微观机理,即物理膜具有高吸收下的致密膜层快传导的基底热冲击效应,而化学膜则有低吸收下的疏松空隙填充慢传导的延缓效应,大量的实验数据及现象都证实了这一结论.     

溶胶-凝胶SiO2酸性膜与碱性膜的激光损伤行为

 采用溶胶-凝胶技术分别在K9基片上镀制了光学厚度相近的单层SiO₂酸性膜和碱性膜。测试了两类薄膜的激光损伤阈值;分别采用透射式光热透镜技术、椭偏仪、原子力显微镜、扫描电镜和光学显微镜研究了两类薄膜的热吸收、孔隙率、微观表面形貌、激光辐照前薄膜的杂质和缺陷状况以及激光辐照后薄膜的损伤形貌。实验结果表明：相对于碱性膜,酸性膜有更大的热吸收和更小的孔隙率,因此其激光损伤阈值较小;两类薄膜不同的损伤形貌与薄膜的热吸收系数与微观结构有关。     

物理法和化学法制备的单层ZrO2膜的激光损伤行为差异

 分别采用电子束热蒸发技术和溶胶-凝胶技术在K9基片上镀制了光学厚度相近的ZrO₂单层薄膜,测试了两类薄膜的激光损伤阈值。分别采用透射式光热透镜技术、椭偏仪、原子力显微镜和光学显微镜研究了两类薄膜的热吸收、孔隙率、微观表面形貌、激光辐照前薄膜的杂质和缺陷状况以及激光辐照后薄膜的损伤形貌。实验结果表明：两类薄膜的不同损伤形貌与薄膜的热吸收与微观结构有关， 物理法制备的ZrO₂膜结构致密紧凑，膜层的杂质和缺陷多；化学法制备的ZrO₂膜结构疏松多孔，膜层纯净杂质少，激光损伤阈值达26.9 J/cm²；因物理法制备的ZrO₂膜拥有更大的热吸收(115.10×10^-6)和更小的孔隙率(0.20)，其激光损伤阈值较小(18.8 J/cm²)，损伤主要为溅射和应力破坏，而化学法制备的ZrO₂膜的损伤主要为剥层。理论上对实验结果进行了解释。     

杂质对溶胶-凝胶SiO2薄膜激光损伤的影响

采用溶胶-凝胶法制备了含有吸收性杂质和非吸收性杂质的SiO2增透膜,采用波长为1 064 nm的激光对其进行了小光斑激光预处理,对比研究了预处理前后的激光损伤差异,研究表明：激光预处理对于洁净的SiO2薄膜影响不大;含10 μm SiO2颗粒杂质的样品微透镜效应很明显,容易成为损伤起始的种子,激光预处理后情况有所改善;含有CeO2颗粒杂质的样品表现出了很强的吸收性质,损伤阈值降低到不足洁净样品的一半。所有样品激光预处理后损伤形貌未发生变化,透光率峰值均有约50 nm的蓝移。     

SiO2/HfO2高反射膜的研制

主要讨论了电子束蒸发SiO2/HfO2薄膜的面形控制和损伤性能。研究了电子束蒸发工艺参数对薄膜应力以及面形的影响;分析了制备工艺对薄膜吸收、节瘤缺陷密度的影响,测量了制备薄膜的损伤阈值。研究结果表明：调整SiO2蒸发时的氧分压可以有效地将薄膜的应力控制在-250~-50 MPa。同时采用金属Hf蒸发可以显著地将节瘤缺陷密度从12.6 mm-2降低至2.7 mm-2,同时将损伤阈值从30 J/cm2提高至55 J/cm2。

     

SiO2/HfO2高反射膜的研制

主要讨论了电子束蒸发SiO2/HfO2薄膜的面形控制和损伤性能。研究了电子束蒸发工艺参数对薄膜应力以及面形的影响;分析了制备工艺对薄膜吸收、节瘤缺陷密度的影响,测量了制备薄膜的损伤阈值。研究结果表明:调整SiO2蒸发时的氧分压可以有效地将薄膜的应力控制在-250~-50 MPa。同时采用金属Hf蒸发可以显著地将节瘤缺陷密度从12.6 mm-2降低至2.7 mm-2,同时将损伤阈值从30 J/cm2提高至55 J/cm2。     

脉冲激光辐照TiO2/SiO2薄膜热效应研究

 采用1.06 μm单脉冲激光在不同能量密度下辐照特殊光电系统中典型薄膜光学元件，理论分析了激光辐照薄膜元件产生的温度场和热应力场，在此基础上建立了激光辐照多层薄膜的物理模型，计算软件使用ANSYS软件的热分析模块对激光辐照薄膜元件产生的温度场和热应力场进行了模拟，分别给出不同激光能量密度下薄膜表面光斑中心的温度场、径向温度场和轴向温度场分布；同时给出不同能量密度下薄膜的轴向、径向和环向热应力分布。并对激光辐照薄膜元件产生的温度场、热应力场进行了分析，阐明了原因。     

脉冲激光辐照TiO2/SiO2薄膜热效应研究

采用1.06 μm单脉冲激光在不同能量密度下辐照特殊光电系统中典型薄膜光学元件,理论分析了激光辐照薄膜元件产生的温度场和热应力场,在此基础上建立了激光辐照多层薄膜的物理模型,计算软件使用ANSYS软件的热分析模块对激光辐照薄膜元件产生的温度场和热应力场进行了模拟,分别给出不同激光能量密度下薄膜表面光斑中心的温度场、径向温度场和轴向温度场分布;同时给出不同能量密度下薄膜的轴向、径向和环向热应力分布。并对激光辐照薄膜元件产生的温度场、热应力场进行了分析,阐明了原因。     

HfO2/SiO2高反射膜的缺陷及其激光损伤

用原子力、Normaski和扫描电子显微镜等分析仪器,对高损伤阈值薄膜常采用的HfO2光损伤所形成的孔洞,与镀制过程中形成的孔洞形貌相似,激光再损伤能力也相似。低能量密度的激光把节瘤缺陷变为孔洞缺陷是激光预处理提高薄膜损伤阈值的原因之一。     

HfO2/SiO2高反射膜的缺陷及其激光损伤

用原子力、Normaski和扫描电子显微镜等分析仪器,对高损伤阈值薄膜常采用的HfO2光损伤所形成的孔洞,与镀制过程中形成的孔洞形貌相似,激光再损伤能力也相似。低能量密度的激光把节瘤缺陷变为孔洞缺陷是激光预处理提高薄膜损伤阈值的原因之一。     

Influences of CO2 laser annealing on mechanical and laser-induced damage properties of ZrO2 thin films

Zirconium dioxide (ZrO₂) thin films were deposited on BK7 glass substrates by the electron beam evaporation method. A continuous wave CO₂ laser was used to anneal the ZrO₂ thin films to investigate whether beneficial changes could be produced. After annealing at different laser scanning speeds by CO₂ laser, weak absorption of the coatings was measured by the surface thermal lensing (STL) technique, and then laser-induced damage threshold (LIDT) was also determined. It was found that the weak absorption decreased first, while the laser scanning speed is below some value, then increased. The LIDT of the ZrO₂ coatings decreased greatly when the laser scanning speeds were below some value. A Nomarski microscope was employed to map the damage morphology, and it was found that the damage behavior was defect-initiated both for annealed and as-deposited samples. The influences of post-deposition CO₂ laser annealing on the structural and mechanical properties of the films have also been investigated by X-ray diffraction and ZYGO interferometer. It was found that the microstructure of the ZrO₂ films did not change. The residual stress in ZrO₂ films showed a tendency from tensile to compressive after CO₂ laser annealing, and the variation quantity of the residual stress increased with decreasing laser scanning speed. The residual stress may be mitigated to some extent at proper treatment parameters.     

Analysis of material modifications induced during laser damage in SiO2 thin films

The damage mechanisms in silica thin films exposed to high fluence 1064 nm nano-second laser pulses are investigated. The thin films under study are made with different techniques (evaporation and sputtering, with and without ion assistance) and the results are compared. The material morphological, optical and structural modifications are locally analyzed with optical microscopy and profilometry, photoluminescence and absorption microscopies. These observations are made for fluences near and above the laser damage threshold, and also in the case of multiple pulse irradiations. An increase in absorption in and around the damages is observed, as well as the generation of different defects that we spatially resolve with absorption and luminescence mappings.     

杂质对溶胶-凝胶SiO2薄膜激光损伤的影响

 采用溶胶-凝胶法制备了含有吸收性杂质和非吸收性杂质的SiO₂增透膜,采用波长为1 064 nm的激光对其进行了小光斑激光预处理,对比研究了预处理前后的激光损伤差异,研究表明：激光预处理对于洁净的SiO₂薄膜影响不大;含10 μm SiO₂颗粒杂质的样品微透镜效应很明显,容易成为损伤起始的种子,激光预处理后情况有所改善;含有CeO₂颗粒杂质的样品表现出了很强的吸收性质,损伤阈值降低到不足洁净样品的一半。所有样品激光预处理后损伤形貌未发生变化,透光率峰值均有约50 nm的蓝移。     

Preparation of sol-gel ZrO2-SiO2 highly reflective multilayer films and laser-induced damage threshold characteristic

Sol-gel (ZrO₂/SiO₂)¹² ZrO₂ films were prepared by spin coating method. The reflectivity spectrum of the films was measured with a Lambda 900 spectrometer. In order to investigate laser-induced damage threshold (LIDT) characteristic of highly reflective films, one-layer ZrO₂ and SiO₂ films, two-layer ZrO₂/SiO₂ and SiO₂/ZrO₂ films were also prepared by spin coating method. LIDT of each film was measured. Damage morphology after laser irradiation was characterized by optical microscopy (Nikon E600K). The experimental results showed that the reflectivity of (ZrO₂/SiO₂)¹² ZrO₂ film at 1064 nm and 355 nm wavelength is 99.7%. The LIDT results decreases as the number of layer of films increases. All the films have similar damage morphology. The experimental results are explained by the different temperature profiles of the films.     

Damage performance of TiO2/SiO2 thin film components induced by a long-pulsed laser

In order to study the long-pulsed laser induced damage performance of optical thin films, damage experiments of TiO₂/SiO₂ films irradiated by a laser with 1 ms pulse duration and 1064 nm wavelength are performed. In the experiments, the damage threshold of the thin films is measured. The damages are observed to occur in isolated spots, which enlighten the inducement of the defects and impurities originated in the films. The threshold goes down when the laser spot size decreases. But there exists a minimum threshold, which cannot be further reduced by decreasing the laser spot size. Optical microscopy reveals a cone-shaped cavity in the film substrate. Changes of the damaged sizes in film components with laser fluence are also investigated. The results show that the damage efficiency increases with the laser fluence before the shielding effects start to act.     

同步辐射光激励的二氧化硅薄膜刻蚀研究

利用热氧化法在硅晶片上生长SiO₂薄膜，结合光刻和磁控溅射技术在SiO₂薄膜表面制备接触型钴掩模，通过掩模方法在硅表面开展了同步辐射光激励的表面刻蚀研究，在室温下制备了SiO₂薄膜的刻蚀图样.实验结果表明：在同步辐射光照射下，通入SF₆气体可以有效地对SiO₂薄膜进行各向异性刻蚀，并在一定的气压范围内，刻蚀率随SF₆气体浓度的增加而增加，随样品温度的下降而升高；如果在同步辐射光照射下，用SF₆和O₂的混合气体作为反应气体，刻蚀过程将停止在SiO₂/Si界面，即不对硅刻蚀，实现了同步辐射对硅和二氧化硅两种材料的选择性刻蚀；另外，钴表现出强的抗刻蚀能力，是一种理想的同步辐射光掩模材料. 关键词： 同步辐射刻蚀 接触型钴掩模 二氧化硅薄膜     

溶胶-凝胶ZrO2-TiO2高折射率光学膜层的抗激光损伤性能研究

采用溶胶-凝胶方法制备了ZrO₂-TiO₂(Ti含量为0—100mol%)高折射率光学薄膜. 借助激光动态光散射技术研究溶胶微结构. 采用傅里叶变换红外光谱、原子力显微镜、薄膜光学常数分析仪、漫反射吸收光谱及强激光辐照实验，对膜层的结构、光学性能及抗激光损伤性能进行了系统表征. 结果显示，溶胶-凝胶工艺可以在部分牺牲折射率的情况下，使膜层的抗激光损伤性能得到大幅度提升. 随Ti含量从0mol%增加至100mol%，膜层的平均损伤阈值呈下降趋势，当Ti含量从0mol%增加至60mol%时，平均损伤阈值从57.1J/cm²下降到21.1J/cm²(辐照激光波长为1053nm，脉冲宽度为10ns，“R/1”测试模式)，当Ti含量从60mol%增加至100mol%时，平均损伤阈值变化很小. 综合溶胶微结构、膜层光学性能和损伤实验结果可以推断，强激光诱导多光子吸收是引起膜层损伤的主要原因. 不同配比的复合膜之间光学带隙的显著差异导致相同辐照激光情况下多光子吸收的概率发生变化，从而导致损伤阈值的规律性变化. 关键词： 2-TiO₂薄膜')" href="#">ZrO₂-TiO₂薄膜 溶胶-凝胶 激光诱导损伤 光学带隙     

渐变折射率Ta_2O_5/SiO_2薄膜多脉冲激光损伤特性

采用离子束溅射(IBS)的方式,制备了1064nm高反射Ta2O5/SiO2渐变折射率光学薄膜。对其光学性能和在基频多脉冲下抗损伤性能进行了分析。通过渐变折射率的设计方式,很好地抑制了边带波纹,增加了1064nm反射率。通过对损伤阈值的分析发现,随着脉冲个数的增加,损伤阈值下降明显;但是在20个脉冲数后,损伤阈值(维持在22J/cm2左右)几乎保持不变直到100个脉冲数。通过Leica显微镜对损伤形貌的观察,发现损伤诱因是薄膜表面的节瘤缺陷。通过扫描电镜(SEM)以及聚集离子束(FIB)对薄膜表面以及断面的观察,证实了薄膜的损伤起源于薄膜表面的节瘤缺陷。进一步研究得出,渐变折射率薄膜在基频光单脉冲下损伤主要是由初始节瘤缺陷引起的,在后续多脉冲激光辐照下初始节瘤缺陷引起烧蚀坑的面积扩大扫过薄膜上的其他节瘤缺陷,引起了其他节瘤缺陷的喷射使损伤加剧,造成损伤的"累积效应"。