Dispersion of electrogyration in sillenite crystals

In this paper we report on the dispersion of the electrogyration of the sillenite crystals Bi₁₂SiO₂₀, Bi₁₂GeO₂₀, and Bi₁₂TiO₂₀ over the visible spectrum. We measure the electrogyration coefficient from the rotation of the polarization plane of the transmitted beam due to the externally applied electric field. Both light transmission and electric field direction are parallel to the [111] crystallographic direction in which the influence of the electrooptic effect is diminished. In all cases the electrogyratory coefficient is found to be between 0.5–3.75×10^-13 m/V and has the same dispersion pattern like optical activity and refractive index. PACS 78.20.Ek; 78.20.Jq; 42.70.Nq     

Dispersion of electro-optic coefficients in sillenite crystals

The photorefractive crystals of the sillenite family (Bi₁₂SiO₂₀ or BSO, Bi₁₂GeO₂₀ or BGO, and Bi₁₂TiO₂₀ or BTO) that belong to the cubic 23 point group are optically active, and exhibit the piezoelectric, elasto-optic, electro-optic and electrogyration effect. In this paper we measure the dispersion of the electro-optic coefficient for all the crystals of the sillenite family in the visible spectral range (500–800 nm). For this we measure by ellipsometry the polarization properties of a beam transmitted in the transverse configuration under the action of an externally applied field. The experimental data are fitted with an analytical expression of the beam polarization to find the electro-optic coefficient. The results show a normal dispersion of the electro-optic coefficient in all three sillenite crystals, similarly to other electro-optic crystals.     

Electro-optic coefficient and wavelength dispersion in sillenite crystals

We report on the measurement of the electro-optic or Pockels coefficient of titanosillenite crystals and show that there is no sensible wavelength dispersion, at least in the explored 510–650 nm wavelength range. This result is in close agreement with a previous paper by Papazoglou et al.: Appl. Phys. B 65, 499–503 (1997) for titanosillenites but in contradiction with a recent paper by Efremidis et al.: Appl. Phys. B 95, 467–473 (2009) reporting on a large dispersion for sillenite crystals. We stress on the fact that photoinduced space-charge electrical polarization may be at the origin of a misleading apparent wavelength dependence of the electro-optic coefficient.     

Temperature dependence of the ground state splitting of Mn2+ in some scheelite type crystals

The EPR spectrum of Mn²⁺ in CaMoO₄, CdMoO₄, CaWO₄ and SrWO₄ has been investigated in the temperature range from 4.2–380 K. Results are given for the Spin-Hamiltonian parametersb ₂ ⁰ andb ₄ ⁰ . They are completed by data forb ₂ ⁰ of Mn²⁺ in SrMoO₄ [1] and discussed with respect to resonant vibrations.     

Temperature dependence of EPR spectrum of Mn2+ doped in ammonium iodide single crystals

EPR of Mn²⁺ doped in ammonium iodide single crystal has been studied at X-band in the temperature range 573–577 K. The observed temperature dependence of line widths and spin Hamiltonian parameter b₂⁰ below room temperature is related to the structural transformations in the crystal. The coexistence of high temperature phase (NaCl) and low temperature phase (CsCl) is attributed to the large thermal hysteresis in line widths and b₂⁰. The dissociation of ion vacancy pairs occurs near 500 K and is reflected in the reversible change of an anisotropic EPR spectrum in an isotropic sextet near this temperature. The ion vacancy pair models for NaCl and CsCl phases are discussed along with the effects of thermal processing of the samples. Heating the crystals above 500 K leads to expulsion of Mn²⁺ impurity from the crystal.     

Temperature dependence of the space charge in alkali halide crystals

Conclusions A theoretical analysis of the mechanism for space-charge formation in ionic crystals must take into account the nature of the crystal defects, the carrier mobility, and the temperature dependence of this mobility. We believe that Eq. (1) best reflects the process of space-charge formation, since it agrees with the experimental results.As the temperature increases, the space charge increases, in agreement with the temperature dependences of the conductivity, the dielectric constant, the capacitance, and the dielectric loss of ionic crystals. The anomalous behavior of the emf corresponding to high-voltage polarization requires a special study.Divalent substitutional cations in alkali halide crystals are not centers for space-charge formation in a polarization layer. They affect the magnitude of the space charge by increasing thenumber of cationic vacancies which enter the crystal along with the impurity and become distributed throughout the lattice.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No. 1, pp. 132–134, January, 1970.In conclusion the authors thank Professor E. K. Savadovskii, D. Sc., for guidance in this study.     

Orientationally polarized dependence of image contrast in doped lithium niobate crystals

In lithium niobate crystals doped with photorefractive iron and copper admixtures when lightening objects with broadband incoherent radiation one can observe typical orientation and polarized dependences of image contrast. The record does not realize at orientation of light bands in the image parallel to the polar axis of the crystal.     

Temperature dependence of ferromagnetic anisotropy energy in cubic crystals

The magnetic anisotropy constant K₁ for cubic ferromagnetic crystals has been discussed based on the general expressions derived by Yang for hexagon crystals. By matching the experimental data, we obtained

$\text{K}{}_1\text{(T,H)}\text{K}{}_1\text{(0,0)}\text{=?6.14}\text{I}\text{?}{}_{\mathrm{<mtext>5</mtext><mtext>2</mtext>}}\text{(T,H) + 3.36}\text{I}\text{?}\text{9}\text{2}\text{(T,H) + 4.88m}{}^2\text{(T,H) ?1.10[}\text{I}\text{?}\text{5}\text{2}\text{(T,H)]}{}^2$

for nickel, and $\text{K}{}_1\text{(T,H)/K}{}_1\text{(0,0)=I}{}_{\mathrm{<mtext>9</mtext><mtext>2</mtext>}}$ for iron, where Î_{$\text{5}\text{2}$} and Î_{$\text{9}\text{2}$} are the hyperbolic bessel functions of order 2 and 4 respectively and m is the reduced magnetization. Both expressions have a theoretical basis.     

Temperature dependence of trap luminescence of CdS doped glasses

The temperature dependence of the optical absorption edge and integrated luminescence of CdS semiconductor doped glasses, having similar characteristics but manufactured by different manufactures like Corning 373 and Schott 1743 has been investigated. Transmission Electron Microscope (TEM) analysis is presented for these samples to understand the contribution of the inhomogeneous distribution of nanocrystal size. The energy gap shrinkage coefficient (α) and effective phonon energy (θ) have been derived from the temperature dependence of the energy gap. The activation energy of thermal photoluminescence (PL) quenching has been derived from the temperature dependence of luminescence intensity. An anomalous behaviour of the luminescence intensity and of bandwidth in the temperature range 50-10 K has been discussed using configuration co-ordinate model. The difference in the behaviour of different samples in the range 50-10 K has been suggested to arise from the inhomogeneous size distribution, which is supported by TEM analysis.     

Temperature dependence of young's modulus for alkali-halide crystals

This apparatus gives readings for Young's modulus E and for the velocity of sound c as functions of temperature t. It is found that — dE/dt for the halides of Na and K increases with the lattice energy in a regular fashion.I am indebted to Professor A. A. Vorob'ev for direction and assistance in this work.     

Temperature dependence of electron properties of Sn doped nanobelts

This paper reports on the measurements of transport properties of high crystalline quality Sn doped In₂O₃ nanobelts. The samples presented metallic conduction in a large range of temperatures; however, at low temperatures, the resistivity showed a slight increase and the current–voltage curves showed a tendency to saturate even in the low-voltage range. From these observations, we discuss some arguments on the possibility of low dimensional conducting channels as the main responsible for the conduction at low temperatures. Additionally, we present an alternative technique for production of low resistance ohmic contacts, which can be further used in devices’ construction.