差示分光光度法测定硅铝铁合金中高硅

差示分光光度法测定硅铝铁合金中高硅李树伟，李凤丽（四川师范大学化学系成都，６１００６８）（成都航空发动机公司成都，６１００６６）关键词硅，合金，差示分光光度法硅铝铁合金在航空工业、机械工业领域有着广泛的应用。该合金中硅含量较高（硅含量１５－２０％），...     

高多孔度多孔硅自支撑膜的制备与表征

发光多孔硅由于在光电子学方面的应用前景而引起人们极大的关注[1]．最近多孔硅发光二极管的研究方面取得了重大进展[2]。但是，有关多孔硅的发光机制仍然存在着争论[1，3，4]，利由于消除了单晶硅衬底的影响，对脱离了硅衬底的多孔硅自支撑膜能够进行普通多孔硅所不能进行的一     

二氟硅杂环丙烯异构化反应的理论研究

近十几年来，硅烯（：SN小'一到作为活性中间体的研究引起化学界的广泛兴趣，形成了内容丰富的硅烯化学．1975年Ilass＊等研究了硅烯和乙炔的加成反应，指出该反应的中间体为硅杂环丙烯，硅杂环丙烯异构化为硅甲基乙炔．Boatz问等利用：j－ZIG（d）基组对金属杂环丙烯小［＊xZC     

凝胶中硅含量对SAPO-5分子筛合成及其性能的影响

通过改变反应物凝胶中的硅含量，用水热法合成了系列ＳＡＰＯ－５分子筛，并用ＸＲＤ、ＳＥＭ和ＭＡＳＮＭＲ分别研究了不同硅含量的分子筛结构和形貌．以正己烷的催化裂解为模型反应，用微反色谱研究了不同硅含量的ＳＡＰＯ－５分子筛的催化性能．结果表明，分子筛骨架中的硅含量随反应物中硅含量的增加而增加；硅开始进入ＳＡＰＯ－５分子筛骨架时，是以取代单个磷原子而进行的；当反应物中硅含量较高时，硅进入分子筛骨架是通过两个硅原子取代一对铝和磷原子，从而在ＳＡＰＯ－５中形成富硅区．硅进入分子筛骨架，虽然未改变分子筛的晶体结构，但改变了分子筛的晶形晶貌．ＳＡＰＯ－５分子筛中存在３种酸中心，即弱酸、中强酸和强酸中心．在正己烷催化裂解中，较低温度时，催化活性中心主要是中强酸中心；当反应温度较高时，弱酸中心也可充当活性中心．在强酸中心上易发生结炭现象．     

采用红外漫反射光谱研究纳米Si3N4的表面结构

采用付利叶红外漫反射光谱对激光法制取的具有不同化学组成的纳米Ｓｉ３Ｎ４粉（１５４－３０ｎｍ）的表面结构，室表面氧化及热稳定性进行了研究，结果表明新鲜的富氮粉体表面主要为硅胺基（Ｓｉ３－ｘＮＨｘ，ｘ＝１－３）结构，粉体暴露空气后硅胺基会与空气中的水分子反应形成硅醇基（ＳｉＯＨ）结构，具有不同组成的粉体随粉中氮含量的增大粒子表面硅胺基量也增加；富硅粉体表面硅胺基较少，其氧化主要为表面硅原子与空气中氧原     

硅钼黄—乙醇体系光化学还原硅钼蓝分光光度法测定硅

含０．８－２．０ｍｏｌ／Ｌ ＨＣｌ的硅钼黄－乙醇溶液体系在波长小于４６０ｎｍ的蓝紫光或紫外照射下，能够发生使硅钼黄定量还原为硅钼蓝的光化学反应。基于这一反应，研究建立了测试样品中硅含量的光化学还原硅钼蓝分光光度法。该法与化学还原硅钼蓝法相比，避免了因加入化学还原剂引起的干扰，重显性好，准确度高，操作简便，快速，测定结果的标准偏差≤０．０１２％，相对标准偏差≤１％。     

多孔硅跃迁特征的研究

采用表面光电压谱和光致荧光激发谱对多孔硅的能带结构和跃迁特性进行了系统研究，结果表明，多孔硅泊带隙明显大于单晶硅的带隙，在３００－５００ｎｍ区产观察到几个与制备条件有关的精细结构带，此构带为多孔硅中不同尺寸的硅线能级，这一发现恰与理论计算结果一致，从实验上支持了多孔硅的量子限域模型。     

恒电位电解法制备光致发光掺钬多孔硅

研究了一种新的多孔硅掺稀土的电化学方法———恒电位电解，以及稀土硝酸盐支持电解质有机溶剂的新电解体系。这一方法和体系的特点是通过采用适当外加电压来控制电解产物，提高掺入的稀土浓度，提高发光强度，同时避免生成导致发光不稳定的产物，提高发光稳定性。优化了阳极氧化制备多孔硅的条件和阴极还原制备掺钬多孔硅的条件（钬化合物浓度、溶剂、离子强度、电解电压、时间），获得光致发光强度高于多孔硅的掺钬多孔硅。对多孔硅和掺钬多孔硅的光致发光机制进行了讨论。     

化学氧化对多孔硅表面态和光致发光的影响

自1990年英国科学家Canham发现室温下多孔老（poroussilicon缩写为PS）的可见光区光致发光以来，在世界范围内迅速形成了一股强大的多孔硅研究热．硅是间接禁带半导体．禁带宽度为1．11eV，不可能在可见区发光．对于多孔硅在可见区的强烈荧光发射及其形成，Canham和Lehamm等分别建议可用量子线的尺寸限制效应未解释[1,2]．但Tsai和Hance等用FTIR研究经过后处理的多孔老样品[3]，认为多孔硅的发光与表面的硅氢化物相关，并提出硅的二氢化物SiH2的浓度与荧光强度相关．关于多孔硅的发光机制，还有非晶态发光[4]等说法．因止匕多孔硅的发…     

多孔硅的光电化学特性研究

研究了多孔硅的光电化学特性和溶液中的光致电荷转移机一，由Ｐ型单晶硅制备的多孔硅具有Ｐ型半导体的光电性质，且光电流响应高于单晶硅，由于多孔硅表面态能级对光致电荷的陷阱作用，多孔硅呈现了独特的光电流响应和光致电荷转移性质。     

A Gaussian-3 theoretical study of small silicon-lithium clusters: electronic structures and electron affinities of SinLi(-) (n = 2-8)

The molecular structures of neutral Si n Li ( n = 2-8) species and their anions have been studied by means of the higher level of the Gaussian-3 (G3) techniques. The lowest energy structures of these clusters have been reported. The ground-state structures of neutral clusters are "attaching structures", in which the Li atom is bound to Si n clusters. The ground-state geometries of anions, however, are "substitutional structures", which is derived from Si n+1 by replacing a Si atom with a Li (-). The electron affinities of Si n Li and Si n have been presented. The theoretical electron affinities of Si n are in good agreement with the experiment data. The reliable electron affinities of Si n Li are predicted to be 1.87 eV for Si 2Li, 2.06 eV for Si 3Li, 2.01 eV for Si 4Li, 2.61 eV for Si 5Li, 2.36 eV for Si 6Li, 2.21 eV for Si 7Li, and 3.18 eV for Si 8Li. The dissociation energies of Li atom from the lowest energy structures of Si n Li and Si atom from Si n clusters have also been estimated respectively to examine relative stabilities.     

Silicon monohydride clusters Si(n)H (n = 4-10) and their anions: structures, thermochemistry, and electron affinities

The molecular structures, electron affinities, and dissociation energies of the Si(n)H/Si(n)H- (n = 4-10) species have been examined via five hybrid and pure density functional theory (DFT) methods. The basis set used in this work is of double-zeta plus polarization quality with additional diffuse s- and p-type functions, denoted DZP++. The geometries are fully optimized with each DFT method independently. The three different types of neutral-anion energy separations presented in this work are the adiabatic electron affinity (EA(ad)), the vertical electron affinity (EA(vert)), and the vertical detachment energy (VDE). The first Si-H dissociation energies, D(e)(Si(n)H --> Si(n) + H) for neutral Si(n)H and D(e)(Si(n)H- --> Si(n)- + H) for anionic Si(n)H- species, have also been reported. The structures of the ground states of these clusters are traditional H-Si single-bond forms. The ground-state geometries of Si5H, Si6H, Si8H, and Si9H predicted by the DFT methods are different from previous calculations, such as those obtained by Car-Parrinello molecular dynamics and nonorthogonal tight-binding molecular dynamics schemes. The most reliable EA(ad) values obtained at the B3LYP level of theory are 2.59 (Si4H), 2.84 (Si5H), 2.86 (Si6H), 3.19 (Si7H), 3.14 (Si8H), 3.36 (Si9H), and 3.56 (Si10H) eV. The first dissociation energies (Si(n)H --> Si(n) + H) predicted by all of these methods are 2.20-2.29 (Si4H), 2.30-2.83 (Si5H), 2.12-2.41 (Si6H), 1.75-2.03 (Si7H), 2.41-2.72 (Si8H), 1.86-2.11 (Si9H), and 1.92-2.27 (Si10H) eV. For the negatively charged ion clusters (Si(n)H- --> Si(n)- + H), the dissociation energies predicted are 2.56-2.69 (Si4H-), 2.80-3.01 (Si5H-), 2.86-3.06 (Si6H-), 2.80-3.03 (Si7H-), 2.69-2.92 (Si8H-), 2.92-3.18 (Si9H-), and 2.89-3.25 (Si10H-) eV.     

A review of silicon and silicone determination in tissue and body fluids – a need for standard reference materials

The role of Si in nature is briefly described, especially the toxic properties of inorganic and organic Si for humans. The use of different forms of silicones in medicine and food industry is noted and potential consequences of their use are discussed. Since Si is an essential trace element there is need for establishment of the “normal” level of Si in blood, other body fluids and tissues and development of speciation of Si forms in biological samples. Numerous difficulties in the determination of Si are described and the need for SRM is stressed. The results of the determination of Si in blood of patients with Si breast implants and controls, Si in milk and blood of nursing mothers – with and without Si breast implants and extractable Si in capsules – are summarized. The obtained data reinforce the need for a reliable SRM.     

^29Si,^27AIMASNMR研究不同脱铝深度稀土 超稳Y沸石中Si、Al的分布

本文应用^29Si,^27AIMASNMR和XRD技术,测量了四种不同脱铝深度的稀土超稳Y沸石的骨架硅铝比,得到了一致的结果,并研究了稀土超稳Y沸石的脱铝过程和稀土离子和Y沸石骨架铝的机理.发现稀土离子存在时,Y沸石骨架中Si、Al的分布与相同硅铝比的ＨＹ不同,在浅、中度脱铝时,主要脱除的是Si(2Al)和Si(3Al)中的铝,深度脱铝时,主要是Si(1Al)和少量Si(2Al)中的铝,而Si(3Al)几乎不变,提出稀土离子最可能是位于方钠的Si(3Al)附近,平衡三个AlO 四面体上的负电荷,起到稳定Si(3Al)结构单元的作用.其次,稀土超稳Y沸石中总的非骨架铝(N~Al)~EF,随脱铝深度的增加而增加,仅只在REUSY-38的^27AIMAS NMR谱中观察到Al^3+非骨架铝的存在.^29Si,^27AIMASNMR     

Investigation of a‐Si (N+)/c‐Si (P) hetero‐junction solar cell through AFORS‐HET simulation

In this paper, a TCO/a‐Si(N⁺)/a‐Si(i)/c‐Si(P)/Al‐BSF(P⁺) structure hetero‐junction (HJ) cell model is developed. With AFORS‐HET V3.0, we investigate the influence of amorphous silicon (a‐Si) emitter and amorphous silicon (a‐Si)/crystalline silicon (c‐Si) interface defects on the HJ cell performance. Through modulating a‐Si(N⁺) emitter doping concentration and band offset at a‐Si/c‐Si interface, a maximum width value of 103 nm inversion layer is observed in the c‐Si(P) side. For 1 Ω.cm c‐Si (P) substrate, emitter doping of over 1 × 10²⁰ cm^?3 is necessary for achieving a high‐efficiency a‐Si/c‐Si HJ cell. Furthermore, defects at a‐Si(N⁺)/c‐Si(P) interface severely affect the open circuit voltage (Voc) and short circuit current density (Jsc) of the cell. Meanwhile, simulation indicates that Voc is more sensitive to interface defect density (Dit) than Jsc. A thin a‐Si(i) layer between a‐Si(N⁺) and c‐Si(P) does induce great improvement in Voc of TCO/a‐Si(N⁺)/a‐Si(i)/c‐Si(P)/Al‐BSF(P⁺) cell. As a result, high cell efficiency of 22.27% is achieved for a‐Si(N⁺)/c‐Si(P) HJ Cell with optimized parameters. Copyright © 2010 John Wiley & Sons, Ltd.     

Oxidation pattern of small silicon oxide clusters: structures and stability of Si6On (n = 1-12)

We have performed systematic ab initio calculations to study the structures and stability of Si(6)O(n)() clusters (n = 1-12) in order to understand the oxidation process in silicon systems. Our calculation results show that oxidation pattern of the small silicon cluster, with continuous addition of O atoms, extends from one side to the entire Si cluster. Si atoms are found to be separated from the pure Si cluster one-by-one by insertion of oxygen into the Si-O bonds. From fragmentation energy analyses, it is found that the Si-rich clusters usually dissociate into a smaller pure Si clusters (Si(5), Si(4), Si(3), or Si(2)), plus oxide fragments such as SiO, Si(2)O(2), Si(3)O(3), Si(3)O(4), and Si(4)O(5). We have also studied the structures of the ionic Si(6)O(n)(+/-) (n = 1-12) clusters and found that most of ionic clusters have different lowest-energy structures in comparison with the neutral clusters. Our calculation results suggest that transformation Si(6)O(n)+(a) + O --> Si(6)O(n+1)+(a) should be easier.     

Comparison of solar silicon feedstock

One of the major factors in reducing a cost of commercial solar cells is the lifetime of the photovoltaic material. In this work, a deterioration of Si generated by solvent metal gathering method (SMG) and Si removed from damaged solar cells is analyzed and compared with electronic grade Si. The differences in heating and cooling cycles on the DTA curves of different solar grade Si and Cu–Si mixtures are compared. A nonequilibrium exothermic reaction in Si generated by SMG method is recorded in samples aged in room atmosphere for 1 year. The outcomes of the cooling cycles after the DTA analyses for various solar grades Si were not significantly differentiated from the referred electronic grade Si indicating that recrystallization of aged Si diminishes the problem related to agglomeration of Cu and oxygen on the surface of Si solar grade particles. The DTA tests showed that recrystallized Si from the deteriorated solar cells can be recycled as feedstock materials for solar cells applications while Si generated by SMG method can be used for blending in order to achieve a long lifetime of Si solar cells.     

Structure and stability of oxygen adsorption on Si(n) (n = 5-10) clusters

The structures, binding energies, and electronic properties of one oxygen atom (O) and two oxygen atoms (2O) adsorption on silicon clusters Si(n) with n ranging from 5 to 10 are studied systematically by ab initio calculations. Twelve stable structures are obtained, two of which are in agreement with those reported in previous literature and the others are new structures that have not been proposed before. Further investigations on the fragmentations of Si(n)O and Si(n)O2 (n = 5-10) clusters indicate that the pathways Si(n)O --> Si(n-1) + SiO and Si(n)O2 --> Si(n-2) + Si2O2 are most favorable from thermodynamic viewpoint. Among the studied silicon oxide clusters, Si8O, Si9O, Si5O2 and Si8O2 correspond to large adsorption energies of silicon clusters with respect to O or 2O, while Si8O, with the smallest dissociation energy, has a tendency to separate into Si7 + SiO. Using the recently developed quasi-atomic minimal-basis-orbital method, we have also calculated the unsaturated valences of the neutral Si(n) clusters. Our calculation results show that the Si atoms which have the largest unsaturated valences are more attractive to O atom. Placing O atom right around the Si atoms with the largest unsaturated valences usually leads to stable structures of the silicon oxide clusters.     

High-resolution X-ray photoelectron spectroscopic studies of alkylated silicon(111) surfaces

Hydrogen-terminated, chlorine-terminated, and alkyl-terminated crystalline Si(111) surfaces have been characterized using high-resolution, soft X-ray photoelectron spectroscopy from a synchrotron radiation source. The H-terminated Si(111) surface displayed a Si 2p(3/2) peak at a binding energy 0.15 eV higher than the bulk Si 2p(3/2) peak. The integrated area of this shifted peak corresponded to one equivalent monolayer, consistent with the assignment of this peak to surficial Si-H moieties. Chlorinated Si surfaces prepared by exposure of H-terminated Si to PCl5 in chlorobenzene exhibited a Si 2p(3/2) peak at a binding energy of 0.83 eV above the bulk Si peak. This higher-binding-energy peak was assigned to Si-Cl species and had an integrated area corresponding to 0.99 of an equivalent monolayer on the Si(111) surface. Little dichloride and no trichloride Si 2p signals were detected on these surfaces. Silicon(111) surfaces alkylated with CnH(2n+1)- (n = 1 or 2) or C6H5CH2- groups were prepared by exposing the Cl-terminated Si surface to an alkylmagnesium halide reagent. Methyl-terminated Si(111) surfaces prepared in this fashion exhibited a Si 2p(3/2) signal at a binding energy of 0.34 eV above the bulk Si 2p(3/2) peak, with an area corresponding to 0.85 of a Si(111) monolayer. Ethyl- and C6H5CH2-terminated Si(111) surfaces showed no evidence of either residual Cl or oxidized Si and exhibited a Si 2p(3/2) peak approximately 0.20 eV higher in energy than the bulk Si 2p(3/2) peak. This feature had an integrated area of approximately 1 monolayer. This positively shifted Si 2p(3/2) peak is consistent with the presence of Si-C and Si-H surface functionalities on such surfaces. The SXPS data indicate that functionalization by the two-step chlorination/alkylation process proceeds cleanly to produce oxide-free Si surfaces terminated with the chosen alkyl group.     

Cycloaddition reaction of 1,3-butadiene with a symmetric Si adatom pair on the Si(111)7x7 surface

We first found experimentally a cycloaddition reaction of a molecule on a symmetry Si pair, 1,3-butadiene on the Si adatom pair of Si(111)7x7, while up to now only asymmetric Si pairs were reported to be involved in cycloaddition reactions on Si surfaces. As the symmetry of a Si pair is expected to influence significantly a cycloaddition product and a reaction pathway, the [4+2]-like cycloaddition product of 1,3-butadiene on the Si adatom pair is suggested to form through a concerted reaction pathway in comparison to a stepwise reaction pathway, which is favorable in the formation of the [4+2]-like cycloaddition product on the asymmetric Si pair (the Si adatom-restatom pair).