预沉积Ge对Si(111)衬底上SSMBE外延生长SiC薄膜的影响

利用固源分子束外延(SSMBE)生长技术, 在Si(111)衬底上预沉积不同厚度(0、0.2、1 nm)Ge, 在衬底温度900 ℃, 生长SiC单晶薄膜. 利用反射式高能电子衍射仪(RHEED)、原子力显微镜(AFM)和傅立叶变换红外光谱(FTIR)等实验技术, 对生长的样品进行了研究. 结果表明, 预沉积少量Ge(0.2 nm)的样品, SiC薄膜表面没有孔洞存在, AFM显示表面比较平整, 粗糙度比较小, FTIR结果表明薄膜内应力比较小. 这说明少量Ge的预沉积抑制了孔洞的形成, 避免衬底Si扩散, 因而SiC薄膜的质量比较好. 没有预沉积Ge的薄膜, 结晶质量比较差, SiC薄膜表面有孔洞且有Si存在. 然而预沉积过量Ge (1 nm) 的样品, 由于Ge的岛状生长,导致生长的SiC表面粗糙度变大, 结晶质量变差, 甚至导致多晶产生.     

Formation of alkanethiol monolayer on Ge(111).

Alkanethiols, CH3(CH2)(n-1)SH, are shown to react readily with HF-treated Ge(111) surface at room temperature to form a high-quality monolayer. The resulting films are characterized by using contact angle analysis (CAA), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry (SE), and high-resolution electron energy loss spectroscopy (HREELS). The octanethiol and octadecanethiol films on Ge(111) both exhibit 101 degrees and 40 degrees water and hexadecane contact angles, respectively. These values indicate that the thiol surface coverage is relatively high, and that the films possess a high degree of orientational ordering. The angle-resolved XPS analysis supports that thiols are bound to the Ge surface by Ge-S bonds at the monolayer/Ge interface. The film thickness values obtained by XPS and SE agree well with the earlier reported values on alkyl monolayers on Ge(111) prepared by Grignard reaction. On the basis of HREEL spectra taken after thermal annealing steps, the monolayers are found to be thermally stable up to 450 K. The thermal stability provides further evidence that thiols are covalently bonded to Ge(111).     

Growth of Ge nanofilms using electrochemical atomic layer deposition, with a "bait and switch" surface-limited reaction

Ge nanofilms were deposited from aqueous solutions using the electrochemical analog of atomic layer deposition (ALD). Direct electrodeposition of Ge from an aqueous solution is self-limited to a few monolayers, depending on the pH. This report describes an E-ALD process for the growth of Ge films from aqueous solutions. The E-ALD cycle involved inducing a Ge atomic layer to deposit on a Te atomic layer formed on Ge, via underpotential deposition (UPD). The Te atomic layer was then reductively stripped from the deposit, leaving the Ge and completing the cycle. The Te atomic layer was bait for Ge deposition, after which the Te was switched out, reduced to a soluble telluride, leaving the Ge (one "bait and switch" cycle). Deposit thickness was a linear function of the number of cycles. Raman spectra indicated formation of an amorphous Ge film, consistent with the absence of a XRD pattern. Films were more stable and homogeneous when formed on Cu substrates, than on Au, due to a larger hydrogen overpotential, and the corresponding lower tendency to form bubbles.     

Effects of gold‐induced crystallization process on the structural and electrical properties of germanium thin films

Gold‐induced (Au‐) crystallization of amorphous germanium (α‐Ge) thin films was investigated by depositing Ge on aluminum‐doped zinc oxide and glass substrates through electron beam evaporation at room temperature. The influence of the postannealing temperatures on the structural properties of the Ge thin films was investigated by employing Raman spectra, X‐ray diffraction, and scanning electron microscopy. The Raman and X‐ray diffraction results indicated that the Au‐induced crystallization of the Ge films yielded crystallization at temperature as low as 300°C for 1 hour. The amount of crystallization fraction and the film quality were improved with increasing the postannealing temperatures. The scanning electron microscopy images show that Au clusters are found on the front surface of the Ge films after the films were annealed at 500°C for 1 hour. This suggests that Au atoms move toward the surface of Ge film during annealing. The effects of annealing temperatures on the electrical conductivity of Ge films were investigated through current‐voltage measurements. The room temperature conductivity was estimated as 0.54 and 0.73 Scm⁻¹ for annealed samples grown on aluminum‐doped zinc oxide and glass substrates, respectively. These findings could be very useful to realize inexpensive Ge‐based electronic and photovoltaic applications.     

Electrochemical and atomic force microscopy study of carbon surface modification via diazonium reduction in aqueous and acetonitrile solutions

Electrochemical reduction of the diazonium salts of 4-nitrobenzene and 4-nitroazobenzene-4'- has been investigated in aqueous acid and acetonitrile media at carbon surfaces. Using pyrolyzed photoresist films as the substrate, we have examined the deposited films using electrochemistry and atomic force microscopy (AFM). Film thicknesses were measured by scratching through the film with an AFM tip. The procedure employed two AFM cantilevers with different lengths, located on the one device. When the shorter cantilever engages the surface in tapping mode, the longer cantilever (which is not resonating) imbeds into the surface with a constant force. For both modifiers and modification media, film thicknesses increase with deposition time to a limiting value. With equivalent modification conditions, films prepared in aqueous acid medium have lower limiting thicknesses than those prepared in acetonitrile. For nitrophenyl (NP) films, the same trends are found when calculating surface coverages from the charge associated with the reduction of surface -Ar-NO2 groups. Lower limiting film thicknesses and surface coverages for films prepared in aqueous conditions is attributed to growth of inherently more blocking films and is supported by examination of the response of the Fe(CN)6(3-/4-) couple at NP-modified surfaces. Combination of voltammetrically determined surface coverage and film thickness data yields a surface coverage of -Ar-NO2 groups of (2.5 +/- 0.5) x 10(-10) mol cm(-2) for a film thickness equivalent to a monolayer of NP groups.     

Dewetting Behavior of Hydrogen Bonded Polymer Complex Film under Hydrothermal Condition

Hydrogen-bonded polymer complex films with the thickness ranging from 50 nm to 2400 nm were prepared by layer-by-layer (LbL) assembly of poly(2-ethyl-2-oxazoline) (PEOX) and poly(acrylic acid) (PAA). The dewetting behavior of PEOX/PAA films under hydrothermal condition was investigated. It was found that the dewetting occurred at solid-liquid interface, and the typical morphologies such as holes, irregular cellular structure, and droplets were observed. Atomic force microscopy (AFM) revealed the initial rupture of the film. Microscopic Raman and infrared (IR) imaging demonstrated that the PEOX and PAA chains remained association during the dewetting process.     

Multilayer nitroazobenzene films covalently attached to carbon. An AFM and electrochemical study

Nitroazobenzene films have been grafted to pyrolyzed photoresist films by electrochemical reduction of the corresponding diazonium salt in acetonitrile solution. Two component films were also prepared by electrochemically grafting methylbenzene layers to preformed NAB films. Voltammetric investigation of the films in aqueous acid medium and the measurement of film thickness using atomic force microscopy (AFM) lead to new insights into film structure. In aqueous acid solution, the azobenzene groups have no detectable electroactivity and not all nitro groups in the films can be reduced. These findings point to a compact film structure in which proton diffusion is limited. There may also be spatial inhibition of the conformational changes that accompany azobenzene reduction. For increasingly thick NAB films, the peak for reduction of the nitro groups moves to more negative potentials and the peaks become more asymmetric in shape. These changes are interpreted in terms of the dielectric properties and the rate of proton diffusion in the films. Film thickness was measured by ploughing through the film with an AFM tip. When an NAB film prepared in acetonitrile solution is reduced in aqueous acid, the film thickness decreases by more than 50%. The changes can be partially reversed by treatment in acetonitrile-electrolyte solution and hence are attributed to ion-solvent induced swelling and shrinking. Thus, the large decrease in thickness detected by AFM after treatment of the film in aqueous acid is consistent with the compact film structure revealed by electrochemistry.     

Al-induced crystallization of amorphous ge and formation of fractal ge micro-/nanoclusters

Results on Al-induced crystallization of amorphous Ge (a-Ge) deposited by vacuum thermal evaporation techniques under thermal annealing in N(2) atmosphere are presented in detail. The a-Ge crystallization and fractal Ge pattern formation on the free surface of annealed Al/Ge bilayer films deposited on single-crystal Si (100) substrates were investigated by using scanning electron microscopy (SEM), X-ray diffraction (XRD), atomic force microscopy (AFM), energy dispersive X-ray spectrometry (EDS), and Raman spectra. It is found that the temperature field effects play an extremely crucial role in a-Ge crystallization and fractal Ge formation process. The open branched structure of fractal Ge clusters in Al/Ge bilayer films was effectively prepared by Al-induced crystallization when they were annealed at 400 °C for 60 min. These films with fractal Ge clusters exhibit charming noninteger dimensional nanostructures, which differ from those of conventional integer dimensional materials such as one-dimensional nanowires/nanorods, nanotubes, nanobelts/nanoribbons, two-dimensional heterojunctions, thin films, and zero-dimensional nanoparticles. The SEM image shows that a big Al grain was found located near the center of a fractal Ge cluster after the films were annealed at 400 and 500 °C for 60 min. This suggests that the grain boundaries of polycrystalline Al films are the initial nucleation sites of a-Ge. It also validates the preferred nucleation theory of a-Ge at triple-point grain boundaries of polycrystalline Al at the interface. This discovery may be explained by the metal-induced nucleation (MIN) mechanism.     

Study of the growth process of in situ polyaniline deposited films

Polyaniline (PAni) thin films were deposited onto BK7 glass substrates using the in situ deposition technique. The control of the time and the aniline concentration in the PAni polymerization reaction on the film deposition allowed us to prepare films with different thickness, down to approximately 25 nm. The film growth process was monitored by measuring the UV-vis spectra and the AFM height profiles of the film surface. The curves of adsorption kinetics were analyzed with the Avrami's model, yielding an exponent n=3, thus indicating nucleation of spheroids at the initial stages of polymerization that grow through a diffusion process. AFM images of the surface height profiles corroborate this hypothesis, with spheroids growing with no preferred orientation during the in situ deposition.     

Electrochemically induced atom-by-atom growth of ZnS thin films: a new approach for ZnS co-deposition

Ultrathin films of ZnS were grown on Au (111) substrates using a novel, simple co-deposition method and characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and UV-visible spectroscopy. Cyclic voltammograms were used to determine approximate deposition potentials for co-deposition. XRD shows that the material growth is highly preferential with (111) orientation. Both AFM and XRD data indicate that the ZnS growth mechanism starts by the formation of rounded nanoparticles at the surface and then continues by lateral and vertical growth to form flat square crystallites of ZnS. UV-vis spectra taken for the ZnS thin films with various thicknesses, which is related to deposition time, shows that the band gap of the ZnS decreases as the film thickness increases.     

Surface morphology and electrical properties of copper thin films prepared by MOCVD

Thin copper films have been grown in a vertical MOCVD (Metal-Organic Chemical Vapor Deposition) reactor using bis(2,2,6,6-tetramethyl-3,5-heptanedionato) copper(II), Cu(thd)₂, as precursor. Deposition has been carried out in a pure hydrogen atmosphere (pressure: 3, 20 mbar) at different substrate temperatures (350–750 ° C). The films have been investigated by profilometry, four-point resistivity measurements, ESCA, AES, XRD, AFM, and Normarsky microscopy. An unusual dependence of the film thickness with deposition time has been observed. Rapid growth occurred in the first minutes resulting in badly conducting films (thickness below 1000 Å). Good electrical resistivities have been obtained above 2000 Å. AFM has been used to gain information about the surface morphology of the films with different thicknesses. The grain size and surface roughness increased with increasing film thickness. Small grains grew in the beginning and the electrical properties have been governed by the highly Ohmic bridges between the individual grains.     

Molecular and morphological characterization of bis benzimidazo perylene films and surface-enhanced phenomena

Thin solid films of bis benzimidazo perylene (AzoPTCD) were fabricated using physical vapor deposition (PVD) technique. Thermal stability and integrity of the AzoPTCD PVD films during the fabrication ( approximately 400 degrees C at 10(-6) Torr) were monitored by Raman scattering. Complementary thermogravimetric results showed that thermal degradation of AzoPTCD occurs at 675 degrees C. The growth of the PVD films was established through UV-vis absorption spectroscopy, and the surface morphology was surveyed by atomic force microscopy (AFM) as a function of the mass thickness. The AzoPTCD molecular organization in these PVD films was determined using the selection rules of infrared absorption spectroscopy (transmission and reflection-absorption modes). Despite the molecular packing, X-ray diffraction revealed that the PVD films are amorphous. Theoretical calculations (density functional theory, B3LYP) were used to assign the vibrational modes in the infrared and Raman spectra. Metallic nanostructures, able to sustain localized surface plasmons (LSP) were used to achieve surface-enhanced resonance Raman scattering (SERRS) and surface-enhanced fluorescence (SEF).     

Facile measurement of polymer film thickness ranging from nanometer to micrometer scale using atomic force microscopy

As many properties of polymer thin films critically depend on their thickness, a convenient and cost‐effective method for precise measurement of film thickness in a wide range is highly desirable. Here, we present a method which enables polymer film thickness, ranging from nanometer to micrometer scale, to be facilely determined by measuring the height of an artificially created film step on smooth substrates with atomic force microscopy (AFM). Three polymeric films (polystyrene, poly(methyl methacrylate) and poly(styrene–ethylene/butylene–styrene) films), spin‐coated on either mica or quartz substrate with thickness ranging from 5.7 nm to 4.4 µm, were employed to demonstrate the procedure and feasibility of our method. The proposed method is particularly suitable for thicker polymer films, thus complementing the traditional AFM ‘tip‐scratch’ method which is generally limited to polymer films of no more than 100 nm thickness. Copyright © 2010 John Wiley & Sons, Ltd.     

Surface structure and photoluminescence properties of AZO thin films on polymer substrates

Al‐doped zinc oxide (AZO) thin films were deposited on indium tin oxide (ITO) coated polyethylene terephthalate (PET) substrates by radio frequency (RF) magnetron sputtering method at room temperature. The effects of film thickness on the surface structure and the photoluminescence properties of the films were investigated by atomic force microscopy (AFM), secondary ion mass spectroscopy (SIMS) and room temperature photoluminescence (PL). AFM analysis showed that the surface of all films was extremely flat and uniform at nanoscale. Root mean square (RMS) value of the surface roughness which scanned the surface area of 3 µm by 3 µm and grain size increased with increasing the film thickness. Thus, the surface morphology of the films became rough because of the coarse grains. The depth profile of AZO layers was analyzed by SIMS. It was found that the thickness of the AZO layer is almost same with the desired film thickness. The PL intensity of the dominant peak decreased and shifted slightly towards the shorter wavelengths with increasing the film thickness. According to the relationships between luminescence intensity and crystalline characteristics, it was observed that the intensity of the peak decreased by the increased surface area of the grains. Copyright © 2014 John Wiley & Sons, Ltd.     

Effect of applied potential on arylmethyl films oxidatively grafted to carbon surfaces

Arylmethyl films have been grafted to glassy carbon surfaces and to pyrolyzed photoresist films (PPFs) by electrochemical oxidation of 1-naphthylmethylcarboxylate and 4-methoxybenzylcarboxylate. Atomic force microscopy (AFM) and electrochemistry were used to characterize the as-prepared films and to monitor changes induced by post-preparation treatments. Film thickness was measured by depth profiling using an AFM tip to remove film from the PPF surface. Surface coverage of electroactive modifiers was estimated from cyclic voltammetry, and monitoring the response of a solution-based redox probe at grafted surfaces gave a qualitative indication of changes in film properties. For preparation of the films, the maximum film thickness increased with the potential applied during grafting, and all films were of multilayer thickness. The apparent rate of electron transfer for the Fe(CN)(6)3-/Fe(CN)(6)4- couple was very low at as-prepared films. After film-grafted electrodes were transferred to pure acetonitrile-electrolyte solution and subjected to negative potential excursions, the response of the Fe(CN)(6)3-/Fe(CN)(6)4- couple changed and was consistent with faster electron-transfer kinetics, the film thickness decreased and the surface roughness increased substantially. Applying a positive potential to the treated film reversed changes in film thickness, but the voltammetric response of the Fe(CN)(6)3-/Fe(CN)(6)4- couple remained kinetically fast. After as-prepared films were subjected to positive applied potentials in acetonitrile-electrolyte solution, the apparent rate of electron transfer for the Fe(CN)(6)3-/Fe(CN)(6)4- couple remained very slow and the measured film thickness was the same or greater than that before treatment at positive potentials. Mechanisms are considered to explain the observed effects of applied potential on film characteristics.     

Round‐robin test for the measurement of layer thickness of multilayer films by secondary ion mass spectrometry depth profiling

An international round‐robin test (RRT) was performed to investigate a method to determine the interface location and the layer thickness of multilayer films by secondary ion mass spectrometry (SIMS) depth profiling as a preliminary study to develop a new work item proposal in ISO/TC‐201. Two types of reference materials were used in this RRT. A SiGe alloy (Si_52.4Ge_47.6) reference film was used to determine the relative sensitivity factors of Si and Ge. A Si/Ge multilayer reference film was used to determine the relative sputtering rates of the Si and Ge layers. The layer thicknesses were measured from the interfaces determined by a 50 atomic percent definition. Seven laboratories from 5 countries participated in this international RRT. The RRT reference expanded uncertainties for Si and Ge layers in a Si/Ge multilayer with similar thicknesses as the reference film were 0.76 and 1.17 nm, respectively. However, those in a thinner Si/Ge multilayer film were slightly larger at 1.04 and 1.59 nm, respectively. Most of the thickness ratios in the 2 Si/Ge multilayer films were consistent with the RRT reference value within their expanded uncertainties.     

聚(ε-己内酯)薄膜结晶形貌及分子取向研究

用匀胶机通过溶液铸膜方法在硅片和铝箔基板上分别制备具有不同厚度的聚(ε-己内酯)(PCL)薄膜. 通过原子力显微镜(AFM)和偏光衰减全反射傅里叶红外光谱(ATR-FTIR)对薄膜中PCL的结晶形貌、 片晶生长方式及分子链取向进行了研究. AFM结果表明, 在200 nm或更厚的薄膜中, PCL主要以侧立(edge-on)片晶的方式生长; 对于厚度小于200 nm的薄膜, PCL片晶更倾向于以平躺(flat-on)的方式生长. 这种片晶生长方式的改变在硅片和铝箔基板上都表现出同样的倾向. 此外, 在15 nm或更薄的薄膜中, PCL结晶由通常的球晶结构变为树枝状晶体. 偏光ATR-FTIR结果表明, 当膜厚小于200 nm时, 薄膜结晶中PCL分子链沿垂直于基板表面方向取向, 并且膜越薄, 取向程度越高, 与AFM的观测结果一致.     

Vibrational Fingerprinting of Defects Sites in Thin Films of Zeolitic Imidazolate Frameworks

Surface-mounted metal–organic frameworks (SURMOFs) are crystalline films of MOFs and have garnered a great deal of attention in the past years. So far, thin-film MOF research has been mainly focused on the synthesis and the exploration of potential applications of these materials, while a detailed understanding of their growth is still lacking. In this report evidence is provided for the inter-grown nature of surface-mounted thin films of Zn-ZIF-8 (SURZIF-8; ZIF=zeolitic imidazolate framework). Two distinct SURZIF-8 thin films have been made through layer-by-layer (LBL) growth after applying 20 and 50 LBL cycles. They have been characterized with atomic force microscopy (AFM) and Raman micro-spectroscopy. A detailed analysis of the Raman mapping data, inter alia using principal component analysis (PCA), revealed the existence of phase boundaries within the 20-cycle thin film, while the 50-cycle thin film is chemically more homogeneous. To further analyze these chemical heterogeneities, density functional theory (DFT) calculations were performed of three theoretical models providing spectroscopic fingerprints of the molecular vibrations associated with the Zn-ZIF-8 thin films. Based on these calculations and the experimental data distinct vibrational markers indicative for the presence of defects sites were identified.     

Scanning angle Raman spectroscopy measurements of thin polymer films for thickness and composition analyses

Scanning angle (SA) Raman spectroscopy was used to measure the thickness and composition of polystyrene films. A sapphire prism was optically coupled to a sapphire substrate on which 6–12% (w/v) polystyrene in toluene was spin coated. Raman spectra were collected as the incident angle of the p-polarized, 785-nm excitation laser was varied from 56 to 70°. These angles span above and below the critical angle for a sapphire/polystyrene interface. The thickness of the polystyrene film was determined using a calibration curve constructed by calculating the integrated optical energy density distribution as a function of incident angle, distance from the prism interface and polymer thickness. The calculations were used to determine the incident angle where waveguide modes are excited within the polymer film, which is the angle with the highest integrated optical energy density. The film thicknesses measured by SA Raman spectroscopy ranged from less than 400 nm to 1.8 μm. The average percent uncertainty in the SA Raman determinations for all films was 4%, and the measurements agreed with those obtained from optical interferometery within the experimental uncertainty for all but two films. For the 1270-nm and 580-nm polystyrene films, the SA Raman measurements overestimated the film thickness by 5 and 18%, respectively. The dependence of the calibration curve on excitation polarization and composition of the polymer and bulk layers was evaluated. This preliminary investigation demonstrates that scanning angle Raman spectroscopy is a versatile method applicable whenever the chemical composition and thickness of interfacial polymer layers needs to be measured.     

Piezoelectricity of ZnO Films Prepared by Sol-Gel Method

"ZnO piezoelectric thin films were prepared on crystal substrate Si(111) by sol-gel technology, then characterized by scanning electron microscopy, X-ray diffraction and atomic force microscopy (AFM). The ZnO films characterized by X-ray diffraction are highly oriented in (002) direction with the growing of the film thickness. The morphologies, roughness and grain size of ZnO film investigated by AFM show that roughness and grain size of ZnO piezoelectric films decrease with the increase of the film thickness. The roughness dimension is 2.188-0.914 nm. The piezoelectric coeocient d33 was investigated with a piezo-response force microscope (PFM). The results show that the piezoelectric coeocient increases with the increase of thickness and (002) orientation. When the force reference is close to surface roughness of the films, the piezoelectric coefficient measured is inaccurate and fluctuates in a large range, but when the force reference is big, the piezoelectric coeocient d33 changes little and ultimately keeps constant at a low frequency."