Cathodoluminescence spectra of Cd1−x Zn x Te solid solutions

An investigation is made of the cathodoluminescence, electrical properties, and structural features of crystals of Cd_1−xZn_xTe solid solutions with composition x ranging from 0.02 to 0.20 mole fraction as compared with CdTe and ZnTe. The main bands of the cathodoluminescence spectra are identified within the range 500–2700 nm. The role of oxygen in Cd_1−xZn_xTe cathodoluminescence is shown. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 67, No. 1, pp. 96–100, January–February, 2000.     

Properties of Hg implanted Hg1−x Cd x Te infrared detectors

Experimental performance parameters of Hg implanted Hg_1?x Cd _x Te photovoltaic detectors are analyzed. At 77K, for 8–14 μm band, a comparison is made between performances and theoretical ultimate diffusion limits in low frequency direct detection. Experimental features are well-explained by a model based on the Auger band-to-band process for carrier recombination. Peak detectivities exceeding 10¹¹ cm Hz^1/2W^?1, external quantum efficiencies as high as 90%, and zero-bias resistance-area products better than 1 Ω·cm² have been achieved in devices with 12 μm cutoff wavelengths. In the 3–5 μm band performances are far from the diffusion limit. Notwithstanding, at 77K zero-bias resistance-area products are better than 10⁴Ω·cm² and detectivities of the order of 10¹² cm Hz^1/2W^?1 were observed at 5 μm. Predominant generation-recombination contribution are present at room temperature in 1–1.3 μm photodiodes whose detectivities, primarily limited by the Johnson noise, at 1.3 μm are higher than 10¹¹ cm Hz^1/2W^?1 at 300 K. The high frequency response of the photodiodes is also discussed. Response times as low as 0.5 ns are reached despite some limitations arising from the implanted layer sheet resistance.     

Laser radiation of Cd x Zn1−x S semiconductor targets of the gas diode

The experimental results on the study of radiation of Cd _x Zn_1?x S semiconductor targets (STs) of the gas diode (GD) for the pressure variation from 10^?1 Torr to the atmospheric pressure are presented. Pulses 0.5–1 ns long with an amplitude to 200 kV were applied to the GD cathode. Laser radiation (509 nm) was generated in the ST under a beam of accelerated runaway electrons to a pressure of 2.5 Torr. At atmospheric pressure, generation in the ST was observed in discharge channels when the streamer moved from one ST surface to another. In this case, as the electric fields strength increased, radiation sequentially arose at three spectral lines, 509, 480, and 469 nm. Possible causes of the observed phenomena are considered.     

Magnetism of colossal magnetoresistance material Fe1−x Cd x Cr2S4

The magnetism of the colossal magnetoresistance material FeCr₂S₄ was studied through substitution by nonmagnetic element Cd. With the increase of Cd content, the high-field magnetization measured at 5 K increases, demonstrating a ferromagnetic Cr–Cr interaction in CdCr₂S₄. As comparing with the anti-ferromagnetic material ZnCr₂S₄, it is deduced that the ferromagnetic interaction in CdCr₂S₄ is favored by its larger Cr–Cr distance. On the other hand, due to Cd substitution, the low-field magnetization irreversibility between zero-field-cooling and field-cooling magnetization weakens with the increase of Cd content and disappears at last when x = 1 in the Fe_1?x Cd _x Cr₂S₄ (0 ≤ x ≤ 1.0) system. By taking account of the single-ion anisotropy of the ferrous ion on the tetrahedral site, the picture of irreversible magnetic behavior induced by magnetic anisotropy is examined.     

Optical coefficients of Hg1 − x − y Cd x Eu y Se crystals

Optical properties of Hg_{1 ? x ? y} Cd _x Eu _y Se crystals grown by the Bridgman method have been investigated based on the independent reflectance and transmittance measurements, which were performed on a Nicolet 6700 spectrometer at T = 300 K in the wavelength range 0.9 ≤ λ ≤ 26.6 μm. The values of refractive index n, absorption index k, and absorption coefficient α have been determined for the crystals studied. Based on the dependences α = f(hν), the presence of direct allowed interband optical transitions in the crystals is established and the band-gap values are determined. The influence of temperature on the transmittance and band gap are investigated in the range T = 114–300 K.     

Electronic structure of ordered ferro- and antiferromagnetic phases of Cd1−x Mn x Te semimagnetic semiconductor

Self-consistent, spin-polarized SDF band structure calculations for the ordered ferromagnetic and antiferromagnetic phases of Cd_0.5Mn_0.5Te and MnTe are reported. The electronic structure, the spin-ordering-dependent hybridization mechanism and the nature of optical excitations are discussed. Also, striking differences between cubic and hexagonal phases of MnTe are discussed and explained.     

Studies on the synthesis and characterization of Zn1− x Cd x S and Zn1− x Cd x S:Mn2+ semiconductor quantum dots

Quantum dots (3–4?nm) of Zn_{1? x} Cd _x S (both free of Mn²⁺ and with Mn²⁺ incorporated) were synthesized through a novel solvothermal-microwave irradiation technique. Detailed structural analysis of the Zn_{1? x} Cd _x S and Zn_{1? x} Cd _x S:Mn²⁺ (x?=?0, 0.25, 0.5, 0.75 and 1) materials was carried out using powder X-ray diffraction technique. For all the compositions, the crystallite size was controlled to less than 1.5?nm. The optical energy gap for Zn_{1? x} Cd _x S was found to vary from 3.878 to 2.519?eV and for Zn_1?x Cd _x S:Mn²⁺ it varies from 3.830 to 2.442?eV when x is increased from 0 to 1. Overall, the optical energy gap could be tuned from a minimum of 2.442?eV to a maximum of 3.878?eV. DC conductivity analysis (from 40°C to 150°C) and electrical energy gap analysis for all the compositions were also performed. The dc conductivity for Zn_{1? x} Cd _x S solid solutions varies from 0.3840?×?10^?10 to 8.7782?×?10^?10?mho/m at 150°C and for Zn_{1? x} Cd _x S:Mn²⁺ it varies from 0.5751?×?10^?10 to 9.8078?×?10^?10 mho /m at 150°C (for x?=?0 to x?=?1). The method of synthesis and the results observed in this investigation may assist in the fabrication of optical devices when the required operational performance falls under the range observed in the study.     

Photoluminescence properties of Eu3+-doped Cd1−x Zn x S quantum dots

Eu³⁺-doped Cd_1−x Zn _x S (0 ≤ x ≤ 0.5) quantum dots (QDs) have been synthesized using wet chemical precipitation method. X-ray diffraction and transmission electron microscope have been used for the crystallographic and morphological characterization of synthesized nanomaterials. In order to understand the spectral characteristics of doped QDs, N₂-laser induced time resolved spectra have been recorded. Excited state lifetime values for dichromatic emission (red and violet) attributed to ⁵D₀ → ⁷F_J (J = 1, 2) transitions of Eu³⁺ and host lattice transitions have been calculated from the recorded luminescence decay curves. Decay time dependence on the dopant concentration (0.01–10 at. wt% of Cd²⁺) has been studied in detail.     

EXAFS Studies of the Local Structure Around Zn in Cd1−x Zn x Te

X-ray absorption spectroscopy has been used to obtain information on the local structure around Zn atoms in CdTe. The Zn–Te distance is 5% smaller than the Cd–Te bond-length in the bulk, but slightly larger than in pure ZnTe. A similar effect is predicted by FLAPW calculations. This revised version was published online in September 2006 with corrections to the Cover Date.     

Ion-plasma treatment of Cd1 ? x Zn x Te (x ～ 0.04) single crystals and application of antireflection diamond-like carbon films

The influence of ion-plasma treatment of Cd_{1 ? x} Zn _x Te (x ?? 0.04) single crystals, which precedes the deposition of an antireflection coating (a diamond-like a-C: H: N film) on the optical properties of the resulting structure, is investigated. Treatment is carried out in an argon, nitrogen, and hydrogen plasma. As follows from the optical properties of the a-C: H: N/Cd_{1 ? x} Zn _x Te, the structure treated in an argon plasma offers the highest transmission. A model of the optical system is proposed that takes into account the formation of transition layers after ion-plasma treatment and the effect of the type of ion on their characteristics. The absorption spectra of the a-C: H: N/Cd_{1 ? x} Zn _x Te system are analyzed, and bands assigned to the stretching and bending vibrations of C-H bonds, as well as to C-C and C=O bonds, are revealed. The presence of these bonds should be taken into account in designing and synthesizing these optical coatings.     

Factors determining the morphology of Cd x Hg1−x Te films in the course of molecular beam epitaxy

Using atomic force microscopy, the dependence of the micromorphology of CdHgTe(301) films grown by molecular beam epitaxy on growth conditions and micromorphology of the buffer CdTe layer is studied. Transmission and high-resolution electron microscopy were used to reveal the interrelation between the micromorphology and microstructure of CdHgTe(301) films. It is found that the roughness of the surface of buffer CdTe layers is inherited during growth of CdHgTe films and initiates the capture of excess tellurium by macrosteps under non-optimal growth conditions, thereby leading to nucleation of growing-in macrodefects. In CdHgTe(301) films grown at the elevated temperature, a periodic wave-like profile and associated lateral modulation of the composition in the [1?03] direction normal to the direction of profile lines [010] are observed. According to the model suggested in the study, formation of a wave-like profile and lateral modulations of the composition are caused by the character of distribution of stresses in the CdHgTe(301) film at the stage of pseudomorphic growth on the buffer CdTe layer.     

Intracenter luminescence of Mn2+ in Cd1−x MnxTe and Cd1−x−y MnxMgyTe under intense optical pumping

A comparative analysis of the kinetic properties of intracenter 3d luminescence of Mn²⁺ ions in the dilute magnetic superconductors Cd_1?x Mn_xTe and Cd_1?x?y Mn_xMg_yTe is carried out. The influence of relative concentrations of the cation components on the position of the intracenter luminescence peak indicates that the introduction of magnesium enhances crystal field fluctuations. As a result, the processes facilitating nonlinear quenching of luminescence are suppressed. The kinetics of 3d-luminescence quenching in Cd_1?x Mn_xTe are accelerated considerably upon elevation of optical excitation level due to the evolution of cooperative processes in the system of excited manganese ions.     

Variations of the band gap of Hg1 ? x Cd x Te solid solutions in response to a magnetic field

The optical transmission spectra of Hg_{1 ? x} Cd _x Te epitaxial layers with a magnetization gradient have been investigated experimentally. The magnetization gradient has been artificially created by the opposite arrangement of the poles of the magnets. The possibility of transforming the shape of the spectral dependences of the optical transmission of the HgCdTe films after their exposure to a magnetic field has been demonstrated. Assumptions about the mechanism underlying this phenomenon have been made.     

Mechanism of charge transfer in injection photodiodes based on the In-n +-CdS-n-CdS x Te1 − x -p-Zn x Cd1 − x Te-Mo structure

Photosensitive In-n ⁺-CdS-n-CdS _x Te_{1 ? x} -p-Zn _x Cd_{1 ? x} Te-Mo film structures based on II–VI semiconductors and operating in the wavelength range λ = 0.490–0.855 μm have been fabricated. These structures in the forward current direction at high bias voltages operate as injection photodiodes and exhibit a high integrated sensitivity S _int ≈ 700 A/lm (14500 A/W) at room temperature. It has been found that, in the fabricated structures at low illuminance levels and low forward bias voltages (0.05–0.50 V), the diffusion and drift fluxes of nonequilibrium charge carriers are directed toward each other. This effect leads to the sign reversal of the photocurrent, which makes it possible on the basis of these structures to create selective photodetectors with injection properties. In the reverse direction of the photocurrent, these structures also operate in the mode of internal amplification of the primary photocurrent, but the integrated sensitivity in this mode is considerably less than that in the forward current direction.     

Supertransferred Hyperfine Magnetic Fields at 111Cd Impurity Sites in Cd x Fe3−x O4 and Zn x Fe3−x O4

The hyperfine magnetic field at ¹¹¹Cd impurities substituting iron in the mixed spinels Cd _x Fe_3−x O₄ and Zn _x Fe_3−x O₄ has been determined by means of the Perturbed Angular Correlation technique. Compounds with different concentrations x were investigated as a function of temperature. The possibility of determining the lattice location of probes at octahedral or tetrahedral sites through the magnitude of the electric field gradient is analyzed. The measured hyperfine magnetic field at impurities in tetrahedral sites is discussed in terms of the populations of magnetic ions in the nearest neighbor sites. This revised version was published online in September 2006 with corrections to the Cover Date.     

Orthorhombic symmetry of valence-band states in CdTe/Cd1−x MnxTe quantum wells

A study is reported of the anisotropy in magnetic-field-induced linear polarization in (001) CdTe/Cd_1−x Mn_xTe quantum wells. The observed limiting anisotropy is shown to be due to the low C _2v symmetry of the quantum well. The relations obtained for the C _2v point group are in a good agreement with experiment. Considered on the microscopic scale, the effect is associated with the heavy-hole g-factor anisotropy in the well plane. Fiz. Tverd. Tela (St. Petersburg) 41, 903–906 (May 1999)     

Elastic constants of the alloys Cd1−x Zn x (x<0.3%) and their temperature dependence

The temperature dependence of elastic constants of Cd_1–x Zn _x alloys, havingx=0.021, 0·042 and 0·233 at.%, has been measured in the temperature range from 4·2 to 300 K by the pulse-echo-overlap ultrasonic method. The adiabatic compressibilities and the Debye temperatures have been calculated. All elastic constants with the exception ofc ₄₄ increase slightly with the growing concentration of Zn.The summary of this paper was presented on the 7^th Conference on Ultrasonic Methods in ilina, September 11^th–13^th, 1980.     

57Fe Mössbauer and infrared studies of the system Co1−x Cd x Fe2O4

Mössbauer and infrared studies were made on samples of the ferrite system Co_1–xCd_xFe₂O₄ x=0.0, 0.1, 0.3, 0.5, 0.7, 0.9 and 1. Mössbauer spectra were taken at room temperature. The spectra of the samples withx0.7 showed well defined Zeeman patterns and they have been analyzed with two components, one due to A-site Fe³⁺ ions, and the other due to B-site Fe³⁺ and Fe²⁺ ions. The pattern due to B-site appeared to be composite and an explanation is given. The spectra withx=0.9 and 1 showed only a quadrupole splitting. The effect of cadmium substitution on the various hyperfine interactions has been discussed and the cationic distribution has been deduced for all values ofx. Far infrared spectra of the ferrite samples in the range 200–700 cm^–1 were reported. Four bands were observed: the high frequency bandv ₁ is assigned to tetrahedral complexes, and the low frequency bandv ₂ to octahedral complexes, a small bandv ₃ is due to Co²⁺-O^2– complexes andv ₄ is assigned to the lattice vibration of the system. The splitting occurred in thev ₁ andv ₂ bands atx=0.9 and inv ₂ atx=1, indicating the presence of Fe²⁺ ions in octahedral sites.