共查询到20条相似文献,搜索用时 15 毫秒
1.
D.M. Bubb B. Toftmann R.F. Haglund Jr. J.S. Horwitz M.R. Papantonakis R.A. McGill P.W. Wu D.B. Chrisey 《Applied Physics A: Materials Science & Processing》2002,74(1):123-125
Thin films of the biodegradable polymer poly(DL-lactide-co-glycolide) (PLGA) were deposited using resonant infrared pulsed
laser deposition (RIR-PLD). The output of a free-electron laser was focused onto a solid target of the polymer, and the films
were deposited using 2.90 (resonant with O-H stretch) and 3.40 (C-H) μm light at macropulse fluences of 7.8 and 6.7 J/cm2, respectively. Under these conditions, a 0.5-μm thick film can be grown in less than 5 min. Film structure was determined
from infrared absorbance measurements and gel permeation chromatography (GPC). While the infrared absorbance spectrum of the
films is nearly identical with that of the native polymer, the average molecular weight of the films is a little less than
half that of the starting material. Potential strategies for defeating this mass change are discussed.
Received: 22 August 2001 / Accepted: 23 August 2001 / Published online: 17 October 2001 相似文献
2.
Daniel C. Mayo Omari Paul Idemudia J. Airuoyo Zhengda Pan Kenneth E. Schriver Sergey M. Avanesyan Hee K. Park Richard R. Mu Richard F. Haglund Jr. 《Applied Physics A: Materials Science & Processing》2013,110(4):923-928
The successful development of flexible, high performance thin films that are competitive with silicon-based technology will likely require fabricating films of hybrid materials that incorporate nanomaterials, glasses, ceramics, polymers, and thin films. Resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) is an ideal method for depositing organic materials and nanoparticles with minimal photochemical or photothermal damage to the deposited material. Furthermore, there are many nonhazardous solvents containing chemical functional groups with infrared absorption bands that are accessible using IR lasers. We report here results of recent work in which RIR-MAPLE has been employed successfully to deposit thin films of TiO2 nanoparticles on Si substrates. Using an Er:YAG laser (λ=2.94 μm), we investigated a variety of MAPLE matrices containing –OH moieties, including water and all four isomers of butyl alcohol. The alcohol isomers are shown to provide effective and relatively nontoxic solvents for use in the RIR-MAPLE process. In addition, we examine the effects of varying concentration and laser fluence on film roughness and surface coverage. 相似文献
3.
Recently, we proposed an alternative arrangement to traditional on- or off-axis PLD geometries, termed inverse PLD (IPLD) that is capable of producing films of improved surface morphology. Two configurations of this new target-substrate arrangement were developed, namely static and co-rotating IPLD. In the static IPLD configuration, the substrate is stationary with respect to the ablated spot; while in the co-rotating IPLD configuration the substrate is fixed to the target surface and rotates simultaneously with the target, hence offering an appealingly simple approach to homogenize film properties.Here we report the growth of CNx and Ti films, simultaneously deposited in the co-rotating and static IPLD arrangements. The homogeneity of the co-rotating films is described by a thickness inhomogeneity index, which allows for the comparison of films of different lateral dimension. A semi-analytical, semi-numerical model is proposed to derive the radial variation of the growth rate of co-rotating IPLD films from the lateral growth rate distributions measured along the symmetry axes of static IPLD films. The laterally averaged growth rate, LAGR is used to describe how the ambient pressure affects growth in the 0.5-50 Pa domain. As an example, the absolute error between the measured and calculated radial growth rate variation, obtained at 5 Pa, was less than 3%, while the LAGR of CNx layers grown by co-rotating IPLD was predicted with 20% accuracy. 相似文献
4.
Hee K. Park Kenneth E. Schriver Richard F. HaglundJr. 《Applied Physics A: Materials Science & Processing》2011,105(3):583-592
Polymers find a number of potentially useful applications in optoelectronic devices. These include both active layers, such
as light-emitting polymers and hole-transport layers, and passive layers, such as polymer barrier coatings and light-management
films. This paper reports the experimental results for polymer films deposited by resonant infrared matrix-assisted pulsed
laser evaporation (RIR-MAPLE) and resonant infrared pulsed laser deposition (RIR-PLD) for commercial optoelectronic device
applications. In particular, light-management films, such as anti-reflection coatings, require refractive-index engineering
of a material. However, refractive indices of polymers fall within a relatively narrow range, leading to major efforts to
develop both low- and high-refractive-index polymers. Polymer nanocomposites can expand the range of refractive indices by
incorporating low- or high-refractive-index nanoscale materials. RIR-MAPLE is an excellent technique for depositing polymer-nanocomposite
films in multilayer structures, which are essential to light-management coatings. In this paper, we report our efforts to
engineer the refractive index of a barrier polymer by combining RIR-MAPLE of nanomaterials (for example, high refractive-index
TiO2 nanoparticles) and RIR-PLD of host polymer. In addition, we report on the properties of organic and polymer films deposited
by RIR-MAPLE and/or RIR-PLD, such as Alq3 [tris(8-hydroxyquinoline) aluminum] and PEDOT:PSS [poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate)]. Finally, the
challenges and potential for commercializing RIR-MAPLE/PLD, such as industrial scale-up issues, are discussed. 相似文献
5.
Jeffrey C. De Vero Glaiza Rose S. Blanca Jaziel R. Vitug Wilson O. Garcia Roland V. Sarmago 《Physica C: Superconductivity and its Applications》2011,471(11-12):378-383
Films of Y-doped Bi-2212 were successfully grown on MgO (1 0 0) substrates by infrared pulsed laser deposition (IR-PLD). With post-heat treatments, smooth and highly c-axis oriented films were obtained. The average compositions of the films have the same stoichiometry as the target. Y content is also preserved on the grown films at all doping levels. The electrical properties of the grown Y-doped Bi-2212 films exhibit the expected electrical properties of the bulk Y-doped Bi-2212. This is attributed to the stoichiometric transfer of material by IR-PLD. 相似文献
6.
A.P. Caricato G. Leggieri A. Luches F. Romano D. Valerini Y.M. Soifer L. Meda 《Applied Surface Science》2007,253(19):8037-8040
We report on the growth and characterization of gold nitride thin films on Si 〈1 0 0〉 substrates at room temperature by reactive pulsed laser ablation. A pure (99.95%) Au target was ablated with KrF excimer laser pulses in nitrogen containing atmosphere (N2 or NH3). The gas ambient pressure was varied in the range 0.1-100 Pa. The morphology of the films was studied by using optical, scanning electron and atomic force microscopy, evidencing compact films with RMS roughness in the range 3.6-35.1 nm, depending on the deposition pressure. Rutherford backscattering spectrometry and energy dispersion spectroscopy (EDS) were used to detect the nitrogen concentration into the films. The EDS nitrogen peak does not decrease in intensity after 2 h annealing at 250 °C. Film resistivity was measured using a four-point probe and resulted in the (4-20) × 10−8 Ω m range, depending on the ambient pressure, to be compared with the value 2.6 × 10−8 Ω m of a pure gold film. Indentation and scratch measurements gave microhardness values of 2-3 GPa and the Young's modulus close to 100 GPa. X-ray photoemission spectra clearly showed the N 1s peak around 400 eV and displaced with respect to N2 phase. All these measurements point to the formation of the gold nitride phase. 相似文献
7.
P. Bílková B. Mitu V. Marotta G. Mattei S. Orlando A. Santagata 《Applied Physics A: Materials Science & Processing》2004,79(4-6):1061-1065
Zinc oxide thin films have been obtained by reactive pulsed laser ablation of a Zn target in O2 atmosphere (gas pressure 2 Pa) using a doubled frequency Nd:YAG laser (532 nm) which was also assisted by a 13.56 MHz radiofrequency (rf) plasma. The gaseous species have been deposited on Si(100) substrates positioned in on-axis configuration and heated from RT up to 500 °C. The obtained thin films have been compared to those produced in the same conditions by ablation of a ZnO target. The deposited thin films have been characterized by scanning electron microscopy, X-ray diffraction, Raman and infrared spectroscopy techniques. The influence of the rf plasma on the morphological and structural characteristics of these thin films is also briefly discussed. PACS 81.15.Fg; 68.55.Jk; 78.30.j 相似文献
8.
Nanostructured titanium oxide thin films have been grown by nanosecond UV pulsed laser deposition (PLD) performed in a reactive background atmosphere. We exploited laser ablation of a Ti target at different pressures of pure oxygen and Ar:O2 mixtures to show that film growth can be tuned at the nanoscale from compact and dense to columnar and to porous, leading to different morphology, density and structure (oxidized fraction and degree of crystallinity). We observed that the position of the substrate relative to the time integrated visible plume front is fundamental in the determination of film structure and morphology. Film growth and film properties can be related to a non-dimensional parameter L which is the ratio between the target-to-substrate distance and the visible plume length. In particular, surface morphology and degree of structural order are strictly related to L irrespective of the oxygen content, while the latter mainly affects the oxidized fraction in the film. 相似文献
9.
H. Minami D. Manage Y.Y. Tsui R. Fedosejevs M. Malac R. Egerton 《Applied Physics A: Materials Science & Processing》2001,73(5):531-534
We have compared the quality of carbon films deposited with magnetically guided pulsed laser deposition (MGPLD) and conventional
pulsed laser deposition (PLD). In MGPLD, a curved magnetic field is used to guide the plasma but not the neutral species to
the substrate to deposit the films while, in conventional PLD, the film is deposited with a mixture of ions, neutral species
and clusters. A KrF laser pulse (248 nm) was focused to intensities of 10 GW/cm2 on a carbon source target and a magnetic field strength of 0.3 T was used to steer the plasma around a curved arc to the
deposition substrate. Electron energy loss spectroscopy was used in order to measure the fraction of sp3 bonding in the films produced. It is shown that the sp3 fraction, and hence the diamond-like character of the films, increased when deposited only with the pure ion component by
MGPLD compared with films produced by the conventional PLD technique. The dependence of film quality on the laser intensity
is also discussed.
Received: 7 December 2000 / Accepted: 20 August 2001 / Published online: 2 October 2001 相似文献
10.
Jaroslav Bruncko Andrej Vincze Marie Netrvalova Pavol Sutta Miroslav Michalka Frantisek Uherek 《Applied Physics A: Materials Science & Processing》2013,110(4):877-882
Alloyed ZnO:Al thin films were prepared by a pulsed laser deposition by the altering of two pure targets (ZnO and Al) during the deposition process. Two deposition temperatures (?197 °C and 400 °C) were applied and differences of diffusion dynamics were compared. As-grown layered films were annealed and aluminium distribution was homogenized. The results revealed that the amorphous structure (samples grown at ?197 °C) of ZnO provide more positive conditions for efficient Al diffusion in comparison with crystalline structure (samples grown at 400 °C). A detailed investigation by SIMS depth profiling confirmed a homogeneous chemical composition of annealed and recrystallized films which exhibited a porous nature and wurtzite crystalline structure. 相似文献
11.
Lithium fluoride (LiF) films have been prepared on LaAlO3 (LAO), MgO, Si and TiN buffered Si substrates using a pulsed laser deposition (PLD) technique. Their surface morphology and structural qualities were studied by using scanning electron microscopy (SEM) and X-ray diffractometry (XRD). Those films deposited on (100)MgO and (100)TiN buffered Si exhibited (200)LiF||(200)MgOand(200)LiF||(200)TiN||(200)Si epitaxial relationships, respectively. These results suggest that LiF films can be epitaxially grown on lattice match substrates and, for the first time, on (100)Si via a buffer layer. LiF grown on bare (100)Si and (100)LAO substrates, however, yielded films of (100) preferred orientation only. Lattice mismatch and thermal effects are invoked to explain these observations. The surfaces of the LiF films are very rough and covered with large globules due to splashing of molten droplets from the target. In order to remedy such deficiencies we used a shadow mask to reduce both the size and the number of these globules while maintaining the heteroepitaxial properties. As a result optically smooth LiF films of excellent structural quality are produced. PACS 78.55.FV; 81.15.FG; 68.55.JK 相似文献
12.
N. D. Scarisoreanu F. Craciun A. Chis R. Birjega A. Moldovan C. Galassi M. Dinescu 《Applied Physics A: Materials Science & Processing》2010,101(4):747-751
Na0.5Bi0.5TiO3-BaTiO3 (NBT-BT) thin films grown by pulsed laser deposition have been investigated by X-ray diffraction, scanning electron microscopy,
and dielectric spectroscopy in order to clarify the role of substrate temperature on crystalline structure, grain morphology,
and dielectric properties. We have shown that the structural and dielectric properties of NBT-BT thin films with composition
at morphotropic phase boundary (6% BT) critically depend on the substrate temperature: small variations of this parameter
induce structural changes, shifting the morphotropic phase boundary toward tetragonal or rhombohedral side. Higher deposition
temperature (1000 K) favor the formation of rhombohedral phase, films deposited at 923 K and 973 K have tetragonal symmetry
at room temperature. Grains morphology depends also on the deposition temperature. Atomic force micrographs show grains with
square or rectangular shape in a compact structure for films grown at lower temperatures, while grains with triangular shape
in a porous structure are observed for films grown at 1000 K. Dielectric spectroscopy measurements evidenced the phase transition
between ferroelectric and antiferroelectric phase at 370 K. Films grown at 1000 K shown low electrical resistivity due to
their porous structure. High dielectric constant values (about 800 at room temperature and 2700 at 570 K) have been obtained
for films grown at temperatures up to 973 K. 相似文献
13.
ZrC thin films were grown on (0 0 1)Si, (1 1 1)Si and (0 0 0 1)sapphire substrates by the pulsed laser deposition (PLD) technique. X-ray diffraction, X-ray reflectivity and Auger electron spectroscopy investigations were used to characterize the structure and composition of the deposited films. It has been found that films grown at temperatures higher than 700 °C under very low water vapor pressures were highly textured. Films deposited on (0 0 1)Si grew with the (0 0 1) axis perpendicular to the substrate, while those deposited on (1 1 1)Si and (0 0 0 1)sapphire grew with the (1 1 1) axis perpendicular to the substrate. Pole figures investigations showed that films were epitaxial, with in-plane axis aligned to those of the substrate. 相似文献
14.
HgCdTe thin films have been deposited on Si(1 1 1) substrates at different substrate temperatures by pulsed laser deposition (PLD). An Nd:YAG pulsed laser with a wavelength of 1064 nm was used as laser source. The influences of the substrate temperature on the crystalline quality, surface morphology and composition of HgCdTe thin films were characterized by X-ray diffraction (XRD), selected area electron diffraction (SAED), atomic force microscopy (AFM) and energy dispersive X-ray spectroscopy (EDS). The results show that in our experimental conditions, the HgCdTe thin films deposited at 200 °C have the best quality. When the substrate temperature is over 250 °C, the HgCdTe film becomes thermodynamically unstable and the quality of the film is degraded. 相似文献
15.
Effect of temperature on pulsed laser deposition of ZnO films 总被引:1,自引:0,他引:1
M. Liu 《Applied Surface Science》2006,252(12):4321-4326
ZnO thin films have been deposited on Si(1 1 1) substrates at different substrate temperature by pulsed laser deposition (PLD) of ZnO target in oxygen atmosphere. An Nd:YAG pulsed laser with a wavelength of 1064 nm was used as laser source. The influences of the deposition temperature on the thickness, crystallinity, surface morphology and optical properties of ZnO films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), selected area electron diffraction (SAED), photoluminescence (PL) spectrum and infrared spectrum. The results show that in our experimental conditions, the ZnO thin films deposited at 400 °C have the best surface morphology and crystalline quality. And the PL spectrum with the strongest ultraviolet (UV) peak and blue peak is observed in this condition. 相似文献
16.
Joseph Lik Hang Chau Min-Chieh Yang Takahiro Nakamura Shunichi Sato Chih-Chao Yang Chung-Wei Cheng 《Optics & Laser Technology》2010,42(8):1337-1339
The growth of ZnO thin films on sapphire substrate using the femtosecond PLD technique is reported. The effect of substrate temperature and oxygen pressure on the structural properties of the films was studied. Highly c-axis oriented ZnO films can be grown on sapphire substrates under vacuum conditions using the femtosecond PLD process. There is an optimum substrate temperature for the pulsed laser deposition of ZnO film that enhances the thermodynamic stability and allows the formation of well-crystallized thin films. The crystal quality of the films can be further improved by increasing the deposition time and introducing oxygen during the pulsed laser deposition process. 相似文献
17.
Bin Xiao Yinzhu Zhang Yujia Zeng Liping Zhu Binghui Zhao 《Applied Surface Science》2006,253(2):895-897
p-Type ZnO thin films have been realized via doping Li as acceptor by using pulsed laser deposition. In our experiment, Li2CO3 was used as Li precursor, and the growth temperature was varied from 400 to 600 °C in pure O2 ambient. The Li-doped ZnO film prepared at 450 °C possessed the lowest resistivity of 34 Ω cm with a Hall mobility of 0.134 cm2 V−1 s−1 and hole concentration of 1.37 × 1018 cm−3. X-ray diffraction (XRD) measurements showed that the Li-doped ZnO films grown at different substrate temperatures were of completely (0 0 2)-preferred orientation. 相似文献
18.
F. Di Fonzo D. Tonini A. Li Bassi C. S. Casari M. G. Beghi C. E. Bottani D. Gastaldi P. Vena R. Contro 《Applied Physics A: Materials Science & Processing》2008,93(3):765-769
Alumina is technologically exploited in several forms, ranging from compact hard films as protective coatings to open microstructures
of high specific area as supports for catalysts. Currently, various production processes are used to deposit the different
forms. PLD has the potential of obtaining not only the different forms, but also a continuous modulation of properties, by
tuning of the process parameters. This work investigates the relationship between the process parameters and the resulting
film morphology, structure and properties for PLD performed with an alumina target in a background oxygen atmosphere. Three
distinct growth regimes are found, leading, respectively, to compact homogeneous films, columnar structures and open microstructures.
These structures are quantitatively characterized, and the ranges of the process parameters corresponding to the three regimes
are identified. An empirical scaling law is proposed, which can be exploited as a guide for the design of growth processes
aimed at obtaining specific film properties. 相似文献
19.
20.
Zirconium(Zr) thin films deposited on Si(100) by pulsed laser deposition(PLD) at different pulse repetition rates are investigated. The deposited Zr films exhibit a polycrystalline structure, and the X-ray diffraction(XRD) patterns of the films show the α Zr phase. Due to the morphology variation of the target and the laser–plasma interaction, the deposition rate significantly decreases from 0.0431 /pulse at 2 Hz to 0.0189 /pulse at 20 Hz. The presence of droplets on the surface of the deposited film, which is one of the main disadvantages of the PLD, is observed at various pulse repetition rates. Statistical results show that the dimension and the density of the droplets increase with an increasing pulse repetition rate. We find that the source of droplets is the liquid layer formed under the target surface. The dense nanoparticles covered on the film surface are observed through atomic force microscopy(AFM). The root mean square(RMS) roughness caused by valleys and islands on the film surface initially increases and then decreases with the increasing pulse repetition rate.The results of our investigation will be useful to optimize the synthesis conditions of the Zr films. 相似文献