Anomalies of the static dielectric constant of Pb1−x Ge x Te

The static dielectric constant of Pb_1–x Ge _x Te (0x0.05) has been determined from differential capacitance measurements on Schottky-barriers in the temperature range of 4.2–300 K. A comparison with data deduced from the phonon frequencies via the Lyddane-Sachs-Teller relation shows substantial discrepancies which are attributed to lattice defects.Work supported by Jubiläumsfonds der Österreichischen Nationalbank     

Anomalies of the refractive index and the optical energy gap of ferroelectric Pb1−x Ge x Te

The refractive index and the optical energy gap of Pb_1–x Ge _x Te (0x0.11) have been determined from transmission- and reflectivity measurements in the temperature range from 4.2 K to 300 K. At the ferroelectric phase transition a change of the temperature coefficient of both quantities is observed. A two bandk·p model calculation demonstrates a correlation of the optical energy gap with the high frequency dielectric constant. For higher values ofx (x=0.09) a splitting of absorption edge and birefringence have been observed.     

Influence of C on Ge incorporation in the growth of Ge-rich Ge1−x−ySixCy alloys on Si (100)

Amorphous carbon nitride powders are successfully produced by ammonothermal synthetic routes. The existence of the chemical bonding of C≡N in the powders is confirmed by Raman and infrared spectra. Raman spectra of various samples show that the G-band frequency shifts to higher energies, and the intensity ratio I_D/I_G decreases as the N content increases. The Knoop hardness of the sintering sample is up to 1200 kgf/mm². The hardness of the sample increases with increasing of the N content. Received: 24 May 2000 / Accepted: 26 May 2000 / Published online: 2 August 2000     

The electronic structure of the mixed 5f system UC x N1−x

We present results of electronic structure calculations for UC _x N_1–x obtained with the relativistic Korringa-Kohn-Rostocker Greens function (RKKR-GF) method. While on the anion sites the disorder is treated within the Coherent Potential Approximation (CPA) the small change in the cation potential upon alloying is accounted for in the averaget-matrix approximation (ATA). The presence of strong local spin fluctuations forx0.6 restricts our treatment to the carbon rich phase, and even there we find that the observed linear specific heat coefficient is much enhanced over the bandstructure value. The computed X-ray photoemission spectra vary smoothly with composition the main change consisting in the melting away of the side peak at –3 eV binding energy seen in pure UC with the adjunction of nitrogen.     

Photoelectric properties of Pb1−x−y Sn x Ge y Te:In epitaxial films

Pb_1–x–y Sn _x Ge _y Te:In epitaxial films are examined in a wide temperature interval and at various background fluxes. These films have high sensitivity to infrared radiation in the spectral range <20m. The lifetime depends exponentially on temperature and varies from several seconds at T=10 K to 10^–2 s at T=20 K. The two-electron model of Jahn-Teller centers is proposed to explain the results. Multielement photoresistors based on these films are fabricated and D*=1.7×10¹³ cm Hz^1/2 W^–1 at T=25 K is achieved. Noise of the photoresistors is independent of background flux when it varies from 10¹² cm^–2 s^–1 to 10¹⁸ cm^–2 s^–1. As compared with Si:Ga and Ge:Hg photoresistors, the responsitivity is several orders larger at the operating temperature 25–30 K.     

Dynamics of the phase transitions in the system of nonequilibrium charge carriers in quantum-dimensional Si1 − x Ge x /Si structures

The dynamics of the phase transition from an electron-hole plasma to an exciton gas is studied during pulsed excitation of heterostructures with Si_{1 ? x} Ge _x /Si quantum wells. The scenario of the phase transition is shown to depend radically on the germanium content in the Si_{1 ? x} Ge _x layer. The electron-hole system decomposes into a rarefied exciton and a dense plasma phases for quantum wells with a germanium content x = 3.5% in the time range 100–500 ns after an excitation pulse. In this case, the electron-hole plasma existing in quantum wells has all signs of an electron-hole liquid. A qualitatively different picture of the phase transition is observed for quantum wells with x = 9.5%, where no separation into phases with different electronic spectra is detected. The carrier recombination in the electron-hole plasma leads a gradual weakening of screening and the appearance of exciton states. For a germanium content of 5–7%, the scenario of the phase transition is complex: 20–250 ns after an excitation pulse, the properties of the electron-hole system are described in terms of a homogeneous electron-hole plasma, whereas its separation into an electron-hole liquid and an exciton gas is detected after 350 ns. It is shown that, for the electron-hole liquid to exist in quantum wells with x = 5–7% Ge, the exciton gas should have a substantially higher density than in quantum wells with x = 3.5% Ge. This finding agrees with a decrease in the depth of the local minimum of the electron-hole plasma energy with increasing germanium concentration in the SiGe layer. An increase in the density of the exciton gas coexisting with the electron-hole liquid is shown to enhance the role of multiparticle states, which are likely to be represented by trions T ⁺ and biexcitons, in the exciton gas.     

Calculation of the temperature dependence of the thermal emf in amorphous alloys CaxAl1−x and AuxNi1−x

The temperature dependence of the thermal emf of Ca_xAl_1–x and Au_xNi_1–x for four different concentrations of the components of the alloys is calculated on the basis of the concept of dynamic concentrated excitations in amorphous metal systems. It is shown that increasing x from 0.15 to 0.50 in Au_xNi_1–x raises the thermal emf, and a further increase in the Au concentration from 0.50 to 0.80 lowers S(T). For Ca_xAl_1–x the dependence S(T) is calculated in the interval of Ca concentrations from 0.55 to 0.75. In this concentration interval the thermal emf decreases as x is increased. It is shown that for both types of alloys the S(T) curve bends abruptly at a temperature near 10T₀ (where T₀ is the concentration-dependent characteristic temperature of amorphous alloys separating the ranges of strong and weak scattering of electrons by dynamic concentration excitations). The so-called S(T) knee shifts toward lower temperatures when the thermal emf increases with increasing x and toward higher temperatures when S(T) decreases with increasing x. The results agree with experimental data.Institute of Physics of Strength and Materials Science, Siberian Branch, Russian Academy of Sciences. State University, Tomsk. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 43–48, August, 1994.     

Characterisation of GaN–In x Ga1−x N quantum-well lasers

An efficient analytical model to calculate the optical gain of the quantum-well laser of the GaN–In _x Ga_1?x N material system is used in this paper. Based on the anisotropic effective mass theories, empirical formulas delineating the relations between optical gain, emission wavelength, well width and material compositions are obtained for such a quantum-well lasers.     

Chromium mask for plasma-chemical etching of Al x Ga1 − x N layers

The influence of the mask material used for formation of GaN mesa-structures using plasma-chemical etching in a BCl₃ : Ar : N₂ atmosphere is studied. It is shown that a bilayer SiO₂/Cr mask in which the thickness of the chromium layer is six to seven times smaller than a desired etch depth provides effective protection of the surface and allows the formation of structures with a flat surface for an etch depth of up to 2.5 μm. When the mask is produced by conventional lithography, the slope of the side walls is no more than 10° and decreases when liftoff lithography is applied.     

On the magnetic susceptibility of Pd1−x Ag x in the range 0.5≦x≦1

The weak variation of the magnetic bulk susceptibility of Pd_1–x Ag _x with temperature T and silver mole fractionx within 0.5x1 has been investigated in the range 5KT400K. Experimental evidence can be given for an intersection point of the susceptibility isotherms (T=const,x) atx=0.55. The observed dependence of on T andx is interpreted by means of a semiphenomenological alloy susceptibility function (T,x).     

Spin-wave resonance in [Co x Ni1 − x ]N and [Co x P1 − x ]N gradient films

Gradient films of ferromagnetic 3d metals with prescribed magnetic potential profile along the film thickness are obtained. It is found that the spin-wave resonance spectrum in these films is characterized by anomalous dependences of resonance fields of spin-wave modes H _r on the mode number: H _r(n) ～ n, H _r(n) ～ n ^2/3.     

Features of the plasma sputtering of polycrystalline Pb1 − x Sn x S films

The processes of the sputtering and modification of surfaces of polycrystalline films of the ternary solid solution Pb_{1 ? x} Sn _x S (x = 0.9–1.0) in a high-density Ar plasma of high-frequency low-pressure inductive discharge are studied. Films with thicknesses of 1–4 μm are grown on glass substrates using the “hot-wall” method and consist of plate-like crystallites. It is established that the sputtering rate for lead-tin sulfide films does not exceed 2.0 nm/s, which is determined by the presence of oxygen-containing compounds on the surfaces. In the case of plate-like crystallites with nanodimensional thicknesses, the effect of smoothing of the developed surfaces of the polycrystalline Pb_{1 ? x} Sn _x S layers during plasma treatment is observed; this is important for fabricating multilayer device structures.     

Surface effect on the reverse current of Al x Ga1−x Sbp−n structures

The effect of an invertedp-region along the free surface ofn-Al _x Ga_1−x Sb on the reverse current ofp−n structures from the given solid solution is analyzed. Expressions which describe “collection” of the inverted layer current on the cylindrical surface of ann-region are discussed. The contribution of the near-surface and bulk components to the reverse current ofp−n structures with a semi-infiniten-region is estimated. For structures with a two-layern-region of finite thickness we have calculated the dependence of the near-surface current on the voltage across thep−n structure, the thickness of then-region, and its composition and doping level. We have compared the calculated current-voltage characteristics with experiment using a Al_0.15Ga_0.85Sbp−n structure as an example. Tomsk State University, Tomsk. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, Vol. 42, No. 1, pp. 34–40, January, 1999.     

Optical properties of GaAs1−x N x alloys grown by molecular beam epitaxy

Optical properties of GaAs_1?x N _x alloys grown by molecular beam epitaxy using GaAs (001) as the substrate have been studied. These include photoluminescence (PL), cathodoluminescence (CL), photocurrent and photomemory effects. The low-temperature (77?K) PL characteristics were measured on samples with 0–0.105% N content. The wide emission band indicates the defective nature of the materials. The widening of the band for materials with increasing nitrogen concentration also suggested that the concentration of defect states in these materials dramatically increased with increasing nitrogen content. The PL and CL spectra for GaAs_1?x N _x layer 1854 did not show identical characteristics. Some layers showed a very sharp fall in photocurrent at low temperatures, indicating a very sharp photoquenching and an interaction between antisite, interstitial and vacancy defects. The photomemory effect, which causes photoquenching and the transition from the EL2 to the EL2? metastable state, was strongly influenced by the optical exposure and thermal history of the sample.     

Subsurface localization of charge carriers in Si/SiO2/Si x Ge1 − x nanostructures

Analysis of the capacitance-voltage (C-V) characteristics reveals an elevated concentration of charge carriers under the surface of a silicon substrate due to the formation of elastically stressed regions induced in the substrate by Si _x Ge_{1 ? x} nanoislands grown on the preliminarily oxidized Si surface. The C-V characteristics exhibit charge density peaks at a depth from 700 to 1000 nm for Si/SiO₂/Si _x Ge_{1 ? x} structures with various thicknesses of the SiO₂ layer. The results of theoretical calculations of the electron density distribution in the bulk of the silicon substrate correspond on the whole to the C-V characteristics. The state of the interfaces in the structures with different thicknesses of the oxide layer, which determines the effects of surface and interfacial recombination as well as charge carrier scattering, is studied by analyzing the kinetics of decay of a photo-emf signal and the photo-emf distribution over the surface of the structure. The results can be used in the development of various devices based on SiGe with inclusions of oxide layers.     

Spin states of cobalt and the thermodynamics of Sm1 − x Ca x CoO3 − δ solid solutions

In the rare-earth SmCoO₃ perovskite, Co³⁺ ions at low temperatures appear to be in the low-spin state with S = 0, t _2g ² e _g ⁰ . If Ca²⁺ ions partially substitute Sm³⁺ ions, oxygen deficient Sm_{1 ? x} Ca _x CoO_{3 ? δ} solid solutions with δ = x/2 appear. The oxygen deficiency leads to the formation of pyramidally coordinated cobalt ions Co _pyr ³⁺ in addition to the existing cobalt ions Co _oct ³⁺ within the oxygen octahedra. Even at low temperatures, these ions have a magnetic state, either S = 1, t _2g ⁵ e _g ¹ or S = 2, t _2g ⁴ e _g ² . At low temperatures, the magnetization of Sm_{1 ? x} Ca _x CoO_{3 ? δ} is mainly determined by the response of Co _pyr ³⁺ ions. Owing to the characteristic features of the crystal structure of the oxygen deficient perovskite, these ions form a set of nearly isolated dimers. At high temperatures, the magnetization of Sm_{1 ? x} Ca _x CoO_{3 ? δ} is mainly determined by the response of Co _oct ³⁺ ions, which exhibit a tendency to undergo the transition from the S = 0, t _2g ⁶ e _g ⁰ state to the S = 1, t _2g ⁵ e _g ¹ or S = 2, tt _2g ⁴ e _g ² state. In addition, the magnetization and specific heat of the solid solutions under study include the contribution from the rare-earth subsystem, which undergoes a magnetic ordering at low temperatures.     

Enhancement of the colossal magnetoresistance in Eu1 − x Ca x B6

The transport and magnetic properties of single crystal samples of substitutional solid solutions Eu_{1 ? x} Ca _x B₆ (0 ≤ x ≤ 0.26) have been studied at temperatures 1.8–300 K in magnetic fields up to 80 kOe. It has been shown that an increase in the calcium concentration results in the suppression of the charge transport accompanied by an increase in the amplitude of the colossal magnetoresistance (CMR) up to the value (ρ(0) ? ρ(H))/ρ(H) ≈ 7 × 10⁵ detected for x = 0.26 at liquid-helium temperature in a field of 80 kOe. The transition from the hole-like conductivity to the electron-like conductivity has been observed in the Eu_0.74Ca_0.26B₆ solid solution in the CMR regime at T < 40 K. The Hall mobility values μH = 200?350 cm²/(V s) estimated for charge carriers in the strongly disordered matrix of the Eu_0.74Ca_0.26B₆ solid solution are comparable with the charge carrier mobility μH = 400?600 cm²/(V s) for the undoped EuB₆ compound. The anomalous behavior of the transport and magnetic parameters of the Eu_{1 ? x} Ca _x B₆ solid solutions is discussed in terms of a metal-insulator transition predicted within the double exchange model for this system with low carrier density.     

Lattice distortion in the solid solutions of UAsxSe1−x

The solid solutions of UAs_xSe_1−x for x = 0.10−0.40 were studied by X-ray diffraction at the temperature region 130–200 K. A rhomboedrical distortion of the crystal structure below T_c was observed. A dependence of an intersitial angle and coefficient of spontaneous magnetostriction on the temperature or the composition of samples was determined.