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1.
Colloidal ZnS quantum dots (QDs) are prepared by passing H2S gas through a solution of Zn(CH3COO)2 in acetonitrile. Photophysical properties are investigated using UV?CVisible and photoluminescence (PL) spectroscopy. The spectrum shows an absorption shoulder at 271 nm representing a band gap of 4.6 eV. The doping of ZnS QDs with Co, Cu, and a mixture of Co and Cu not only increased the band gap to 0.2 eV but also turns these otherwise colorless QDs to blue in color due to cobalt, and green due to Cu. The observed emission in the visible region suggests that the dopants may have induced additional excited states to the ZnS QDs. This absorbance in the visible region can be utilized in the optoelectronic applications.  相似文献   

2.
In this paper, 1D single-crystalline MnO2 nanowires have been successfully synthesized by hydrothermal method using KMnO4 and (NH4)2S2O8 as raw materials. X-ray diffraction patterns and high-resolution TEM images reveal pure tetragonal MnO2 phase with diameters of 15–20 nm. Photoluminescence studies exhibited a strong ultraviolet (UV) emission band at 380 nm, blue emission at 452 nm and an extra weak defect-related green emission at 542 nm. UV–visible spectrophotometery was used to determine the absorption behavior of nanostructured MnO2 and a direct optical band gap of 2.5 eV was acquired by Davis–Mott model. The magnetic properties of the products have been evaluated using vibrating sample magnetometer, which showed that MnO2 nanowires exhibited a superparamagnetic behavior at room temperature. The magnetization versus temperature curve of the as-obtained MnO2 nanowires shows that antiferromagnetic transition temperature is 99 K.  相似文献   

3.
We report on the synthesis of self-assembled hillock shaped MoO3 nanoparticles on thin films exhibiting intense photoluminescence (PL) by RF magnetron sputtering and subsequent oxidation. MoO3 nanocrystals of size ∼29 nm are self-assembled into uniform nanoparticles with diameter ∼174 nm. The mechanism of the intense PL behaviour from MoO3 nanoparticles is investigated and systematically discussed. The films exhibit two bands; a near-band-edge UV emission and a defect related deep level visible emission. The enhancement in PL intensity with annealing is not only by the improvement in crystallinity and grain size but also by the increase in the rms surface roughness and porosity of the films. The PL intensity is thermally activated with activation energy 1.07 and 0.87 eV respectively for the UV and visible emissions. The UV band exhibits a blue shift according to the band gap with increasing post-annealing temperatures, which suggests the possibility to tune the UV photoluminescence band by varying the oxidation temperature.  相似文献   

4.
ZnO thin films were prepared by RF magnetron sputtering. The photoluminescence dependence on the growth ambient and annealing temperatures and the atmosphere has been studied. Visible photoluminescence with blue, green, orange, and red emission bands has been demonstrated by controlling the preparation conditions. Complete suppression of the visible emission bands was also realized by annealing the O2-ambient-grown samples in N2 atmosphere at higher temperatures, which indicated the preparation of ZnO thin films with high optical quality.  相似文献   

5.
Single crystal ZnO nanowires with lengths and diameters ranging from 2 to 30 μm and 100 to 300 nm, respectively, have been grown by the vapor transport method on SiO2/Si substrates using Au as catalyst. Their Raman and emission properties under different excitation wavelengths have been studied at the nanoscale. Whereas Raman measurements on nanowires corroborate the well-known ZnO phonon characteristics, their photoluminescence spectra exhibit a very broad emission band, mainly in the visible region from 450 to 800 nm, which corresponds to different defect-related recombination processes. Spectrally resolved scanning near-field optical microscopy, SNOM, of single ZnO nanowires have also been performed for a direct imaging of the photoluminescence emission with high spatial resolution below 100 nm, establishing a relationship with the simultaneously acquired topography.  相似文献   

6.
Bi4Ti3O12 (BIT) nanoparticles with a narrow average particle size distribution in the range of 11–46 nm was synthesized via a metal-organic polymeric precursor process. The crystallite size and lattice parameter of BIT were determined by XRD analysis. At annealing temperatures >550 °C, the orthorhombic BIT compound with lattice parameters a = 5.4489 Å, b = 5.4147 Å, and c = 32.8362 Å was formed while at lower annealing temperatures orthorhombicity was absent. Reaction proceeded via the formation of an intermediate phase at 500 °C with a stoichiometry close to Bi2Ti2O7. The particle size and the agglomerates of the primary particles have been confirmed by FESEM and TEM. The decomposition of the polymeric gel was ascertained in order to evaluate the crystallization process from TG-DSC analysis. Raman spectroscopy was used to investigate the lattice dynamics in BIT nanoparticles. In addition, investigation of the dependence of the visible emission band around the blue–green color emission on annealing temperatures and grain sizes showed that the effect of grain size plays important roles, and that oxygen vacancies may act as the radiative centers responsible for the observed visible emission band.  相似文献   

7.
Undoped SnO2 thin films have been deposited on amorphous glass substrates with different precursor solution volume (10, 15, 20 and 25 ml) using simple and cost-effective nebulized spray pyrolysis technique. The influence of precursor solution on structural, optical, photoluminescence and electrical properties had been studied. The X-ray diffraction spectra prove the polycrystalline nature of SnO2 with tetragonal structure. All the films show a preferred growth orientation along (110) diffraction plane. The average transmittance of SnO2 thin films varied between 82 and 75% in the visible as well as IR region. The band gap energy decreases from 3.74 to 3.64 eV corresponding to direct transitions with the precursor solution volume had increased from 10 to 20 ml and then increased as 3.72 eV for 25 ml. SEM pictures demonstrated polyhedrons like grains. EDX confirmed the existence of Sn and O elements in all the prepared SnO2 thin films. Photoluminescence spectra at room temperature revealed that the four emission bands in all the samples such as sharp dominant peak at 361 nm with shoulder peak at 377 nm (UV region), a broad and low intensity peak at 492 nm (blue region) and 519 nm (green region). The electrical parameters were examined by Hall effect measurements, which demonstrated that the film prepared at 20 ml precursor solution volume possess minimum resistivity 2.76?×?10?3 Ω-cm with activation energy 0.10 eV and maximum figure of merit 1.54?×?10?2 (Ω/sq)?1.  相似文献   

8.
The Zn1−xYxO nanoparticles with good optical properties have been prepared by sol–gel method. The yttrium doping effect on the structures and optical properties were investigated by XRD, SEM, XPS and low temperature photoluminescence. The UV emission intensity of yttrium doped ZnO was over 300 times stronger than that of pure ZnO, which was an exciting result in enhancing the ultraviolet near band edge emission in photoluminescence from ZnO nanoparticles. The UV emission band of doped ZnO nanoparticles exhibits a red shift from 388 to 398 nm, indicating a shallow energy level near valence band has been formed due to the yttrium doping into ZnO lattices. The defect-related band is suppressed (ID/IUV = 1–0.83) considerably in Zn1−xYxO nanoparticles, revealing the quenching of the broad yellow-orange emission. The doping effect on the optical properties is investigated by temperature dependent photoluminescence. The experimental results indicated that the donor level of yttrium is deeper than that of undoped ZnO.  相似文献   

9.
As a new class of inorganic phosphor, orthophosphate phosphors materials have received great interest because of their potential applications in solid-state lightings and displays. In this article, we focus on current developments in the synthesis, crystal structure and luminescence properties of orthophosphate phosphors for solid-state lightings. We discuss the synthesis of a family of orthophosphate phosphor doped with europium (Eu2+ and Eu3+) by traditional and novel methods. In the fluorescent lamp, phosphor materials convert UV radiation into visible radiation. Lamp phosphors are mostly white in color and they should not absorb the visible radiation. New phosphors that can absorb excitation energy from blue or near ultraviolet (n-UV) LEDs and generate visible emissions efficiently are desired. The criteria of choosing the best phosphors, for blue (450–480 nm) and n-UV (380–400 nm) LEDs, strongly depends on the absorption and emission of the phosphors. Here, we will review the status of phosphors for solid-state lightings and prospect the future development. The impacts of doping of europium and photoluminescence properties on orthophosphate phosphors were investigated and we propose a feasible interpretation.  相似文献   

10.
The effect of annealing atmosphere, temperature and aging on the photoluminescence of pure and Li-doped ZnO thin films has been investigated. Annealing the pure ZnO in N2 and He above 800 °C results in green emission centered at ca. 500 nm; however annealing in air red-shifts the green emission to 527 nm. The visible emission of the Li-doped ZnO is found to be largely dependent on the annealing atmosphere. Warm-white photoluminescence with a broad emission band covering nearly the whole visible spectrum is obtained for the Li-doped ZnO films annealed in helium. The substitutional and interstitial extrinsic point defects created by lithium doping may mediate the relative concentration of the intrinsic defects and thereby tune the intrinsic-defect-related visible emission. The enhanced intensity ratio of near-band-edge ultraviolet emission to deep-level visible emission with aging time may be ascribed to both in-diffusion of oxygen from air and self-diffusion of oxygen interstitials to heal the oxygen vacancies during the aging process.  相似文献   

11.
Well-dispersed undoped and Mg-doped ZnO nanoparticles with different doping concentrations at various annealing temperatures are synthesized using basic chemical solution method without any capping agent. To understand the effect of Mg doping and heat treatment on the structure and optical response of the prepared nanoparticles, the samples are characterized using X-ray diffraction (XRD), energy-dispersive X-ray (EDX), UV–Vis optical absorption, photoluminescence (PL), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) measurements. The UV–Vis absorbance and PL emission show a blue shift with increasing Mg doping concentration with respect to bulk value. UV–Vis spectroscopy is also used to calculate the band-gap energy of nanoparticles. X-ray diffraction results clearly show that the Mg-doped nanoparticles have hexagonal phase similar to ZnO nanoparticles. TEM image as well as XRD study confirm the estimated average size of the samples to be between 6 and 12 nm. Furthermore, it is seen that there was an increase in the grain size of the particles when the annealing temperature is increased.  相似文献   

12.
Luminescent properties of ZnO nanorods covered with Ag nanoparticles are examined. Nanorods were synthesized on AAO templates using Atomic Layer Deposition (ALD) technique. Two types of the samples were prepared with different arrangement of ZnO nanorods and doping conditions. Nanorods of the second type were codoped with Al, to stimulate defect-related emissions. The ZnO material fills heterogeneously the interior of the AAO nanopores and has hexagonal, wurtzite structure. Both types of structures exhibit a broad defect-related emission at about 440 nm, most probably related to recombination at zinc interstitial (Zni) defects. This emission in samples with a random distribution of ZnO:Al nanorods and finer Ag nanoparticles is enhanced by factor of ~2.5 upon Ag deposition. The so-obtained material is interesting from the point of view of its application in blue range emitting diodes.  相似文献   

13.
Structural and optical properties of 1 at % Al-doped Zn1−xMgxO (x=0–8%) powders prepared by sol–gel method were systematically investigated by means of X-ray diffraction, scanning electron microscopy, ultraviolet–visible absorbance measurement, photoluminescence and Raman scattering spectra. All the powders retained the hexagonal wurtzite structure of ZnO. The band gap and near band emission energies determined from absorbance and photoluminescence spectra increased linearly with increasing Mg content, respectively, which implied that the Mg worked effectively on ZnO band gap engineering, irrespective of Al codoping. However, according to the PL and Raman scattering studies, for the sample of x=8%, the Al doping efficiency was decreased by higher Mg codoping. On the other hand, the effect of Mg codoping on photocatalytic degradation of methylene orange was explored experimentally. The substitution of Mg ions at Zn sites shifted the conduction band toward higher energies and then enhanced the photocatalytic activity, while the incorporation of interstitial Mg ions and decreased Al doping efficiency for higher Mg doping sample (x=8%) reduced the photocatalytic activity.  相似文献   

14.
Up-conversion (UC) is a photoluminescence process which converts few low energy photons to a higher energy photon. This process has more potential usages in many different fields like bioimaging, solar spectrum tuning, and security encoding. Nowadays, researches about UC mostly focusing on biomedical signory and synthesis of nanoparticles. The synthesis of NaYF4 nanoparticles executed under series of pH value condition results in different morphology and photoluminescence effect. Samples in low pH value created better consequent and quality than the specimen which had higher pH value. In addition, we observed NaYF4 samples of doping Li+, realizing that the action of distorting in the local symmetry around rare-earth ions is caused by Li+ doping. The NaYF4 microparticles which doped higher concentration of Li+ has strong fluorescence properties and intensities compared with their corresponding group of Li+-free, the blue emission 479 nm luminescence intensities and 454 nm luminescence intensities in NaYF4:Yb3+, Tm3+ microparticles doped 20 mol% Li+ are enhanced 3 and 8 times, separately. And violet emission luminescence intensities around 345 and 360 nm are about 10 and 7 times, respectively. The result indicated that the improved UC luminescence of NaYF4:Yb3+. Tm3+ microparticles with Li+ doping have potentially applications.  相似文献   

15.
《Current Applied Physics》2010,10(2):636-641
In this paper, a very simple procedure was presented for the reproducible synthesis of large-area SnO2 nanowires (NWs) on a silicon substrate by evaporating Sn powders at temperatures of 700, 750, and 800 °C. As-obtained SnO2 NWs were characterized by field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and Raman spectroscopy. They revealed that the morphology of the NWs is affected by growth temperature and the SnO2 NWs are single-crystalline tetragonal. The band gap of the NWs is in the range of 4.2–4.3 eV as determined from UV/visible absorption. The NWs show stable photoluminescence with an emission peak centered at around 620 nm at room-temperature. The sensors fabricated from the SnO2 NWs synthesized at 700 °C exhibited good response to LPG (liquefied petroleum gas) at an operating temperature of 400 °C.  相似文献   

16.
周小红  杨卿  邹军涛  梁淑华 《物理学报》2015,64(8):87803-087803
利用热氧化法在不同参数条件下生长了Ga掺杂范围较宽的ZnO薄膜, 研究了ZnO薄膜的表面微观结构和光致发光性能. 研究表明: Ga以Ga3+存在并掺入ZnO晶格取代Zn2+, Ga的掺入改变了ZnO薄膜中的缺陷类型及浓度、化学计量比、薄膜表面结晶质量, 进而影响了薄膜的光致发光性能. 随着热氧化温度升高, Ga掺杂量增大, ZnO薄膜的晶粒尺寸增大, 尺寸更均一, 紫外光与可见光强度比增大. 随着热氧化时间延长, Ga掺杂量降低, ZnO薄膜的晶粒尺寸均一性变差, 紫外光与可见光强度比减小.  相似文献   

17.
In this article, nanocrystalline silicon carbide (nc-SiC) and composite have been synthesized at an annealing temperature as low as 750 °C through the thermal reaction of Si/C/Si multilayers deposited on the Si(100) substrate by ultra-high-vacuum ion beam sputtering (UHV IBS) compared with the conventional thermal formation of crystalline SiC (c-SiC) nanostructures above 1,000 °C. The evolution of microstructure and reaction between C and Si was examined by Raman spectroscopy, Fourier transform infrared spectrometer (FTIR), high-resolution field emission scanning electron microscope (HR-FESEM), and high-resolution transmission electron microscopy. The c-SiC nanoparticles (np-SiC) of around 20–120 nm in diameter appeared on the top and bottom of the three-layer film with a particle density of around 2.63 × 1010 cm−2 after 750 °C annealing. The composite of nc-SiC and Si nanocrystals (nc-Si) size below 5 nm embedded in an amorphous SiC (a-SiC) matrix appeared at the interface between the Si and C layers. Efficient thermal energy is the driving force for the formation of nc-SiC and composite through interdiffusion between C and Si. The broad visible photoluminescence (PL) spectrum of 350–750 nm can be obtained from the annealed composite Si/C/Si multilayer and deconvoluted into four bands of blue (~430 nm), green (~500 nm), green–yellow (~550 nm), and orange (~640 nm) emission, corresponding to the emission origins from nc-SiC, sp2 carbon clusters, np-SiC, and nc-Si, respectively.  相似文献   

18.
Pyrochlore‐structured yttrium titanate phosphors activated by trivalent europium ions (Y2Ti2O7(YT):Eu3+), with spherical morphology, were synthesized at different pH values by a solvothermal process. From the structural and morphological measurements, the annealing temperature had no effect on the spherical morphology of the YT:Eu3+ sample. The photoluminescence excitation and emission spectra were taken by activating the Eu3+ ions in the YT host lattice as functions of Eu3+ ion concentration and annealing temperature. The optimal doping concentration was found to be 4 mol%, exhibiting an excellent orange–red emission due to the highest intensity of the 5D07F1 transition. When the YT:Eu3+ phosphor was mixed with YAG:Ce3+ phosphor, a brilliant white light emission was achieved. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

19.
UV excited photoluminescence from BaWO4 (BWO) single crystals has been investigated in the temperature range of 77-300 K. The presence of two emission bands in the UV and blue spectral regions is observed under excitation by 230 nm at room temperature. The observation of UV emission band at room temperature is a novel result. The thermal treatment at elevated temperatures under air or vacuum is observed to influence the optical and luminescence properties of the crystal. The changes brought about by annealing in air are found to be reversible. However, in vacuum annealed samples the UV emission is completely quenched.  相似文献   

20.
ZnO nanorods with uniform diameter and length have been synthesized on an indium-tin oxide (ITO) substrate by using a simple thermal evaporation method which is suitable to larger scale production and without any catalyst or additives. The samples were characterized with X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet-vis (UV-vis) absorption spectrum, photoluminescence (PL) spectrum and Raman spectrum. The single-phase ZnO nanorods grow well-oriented along the c-axis of its wurtzite structure on ITO substrate. The ZnO nanorods shows sharp and strong UV emission located at 380 nm without notable visible light emission in the PL spectrum, which suggests the good crystallinity of the nanorods, which was also testified by their Raman spectrum. The photodegradation of methylene orange (MO) in aqueous solution reveals that the well-arranged c-axis growth of ZnO nanorods possess evidently improved photocatalytic performance and these properties enable the ZnO nanorods potential application in UV laser.  相似文献   

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