共查询到19条相似文献,搜索用时 52 毫秒
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嵌入硅基多孔氧化铝中的荧光染料的发光性质研究 总被引:3,自引:0,他引:3
3种不同的荧光染料被分别嵌入硅基多孔氧化铝模板中,并且在室温下得到了蓝光、绿光和红光波长的荧光发射.实验中同时观测到上述荧光光谱的蓝移现象.研究结果表明,荧光染料沉积在不同的模板(如硅基多孔氧化铝、多孔硅)中,其相互作用的机理是不同的.模板发光机制的差异将直接影响荧光染料的发光性质. 相似文献
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硅基超薄多孔氧化铝膜的制备 总被引:2,自引:0,他引:2
将二次阳极氧化法应用于硅基铝膜的制备, 在草酸溶液中得到了厚度可控的硅基超薄多孔氧化铝膜(PAM), 厚度小于100 nm. 实验中记录了氧化电流随时间的实时变化曲线, 发现硅衬底的氧化电流在大幅下降前有一小幅波动. 对应于Al/Si界面的氧化过程中, 孔洞底部之间的残留铝岛被优先氧化, 可将此作为终止铝氧化的标志. 扫描电镜(SEM)观察表明, 二次氧化提高了孔洞分布的均匀性, 使得孔在一定的区域内呈现有序六角分布.这种模板可进一步用于硅基纳米器件和纳米结构的制备. 相似文献
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Co nanowire arrays were prepared by anodic alumina oxide template,which formed during DC superposed pulse source anodization process. The structure of porous alumina template and properties of optical polarization of Co nanowire arrays are studied with the help of the scanning electron microscope, X-ray diffraction and infrared spectroscopy. The results showed that Co nanowire arrays have an excellent polarization property in near infrared region in 2700nm. We also found that the properties of optical polarization can also be controlled by adulterating kinds of electrodepositing metal and its alloys, by controlling length of nanowire, and by changing incidence angle. 相似文献
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利用Ag离子与Br离子之间的化学沉积作用在孔隙中充满明胶的阳极氧化铝(AAO)模板中制备了AgBr/AAO纳米介孔复合材料.材料选择性曝光后,利用原位显影液对其进行化学显影,在AAO模板中选择性得到Ag纳米线阵列.实验结果表明:Ag纳米线是连续的、致密的,且具有多晶结构,充满了曝光部分的模板孔隙.本文还对影响Ag纳米线选择性生长的因素进行了简单讨论. 相似文献
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将电子束蒸发在硅衬底(P型,〈100〉晶向,0-5 Ω·cm) 上厚度400 nm 、纯度99-99 %的铝膜,浸入具有中等溶解能力的15 wt% H2SO4 中,DC恒压60 V、恒温0 ℃条件下,进行多孔型过度阳极氧化处理,从而在Si 基上得到包含空隙层的多孔氧化铝膜.通过对样品TEM 平面形貌、SEM 横断面形貌观察以及AES深度剖析,研究了样品的多层结构,并初步讨论了由此揭示出的硅基多孔氧化铝膜的生长过程 相似文献
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多孔硅在室温下发出光致荧光展现了硅用作光电子材料和显示技术材料的前景。掺入希土元素可以改善硅的发光性能。本文首次报道多孔硅掺希土的一种新的电化学掺杂方法——恒电位电解,和一种希土硝酸盐-支持电解质-有机溶剂的新电解体系。这一方法和体系的特点是通过采用适当外加电压来控制电解产物,提高掺入的希土浓度,提高发光强度;同时可避免析出使发光不稳定的产物,提高发光稳定性。优化了阳极氧化制备多孔硅的条件和阴极还原制备掺镨多孔硅的条件(镨化合物浓度、溶剂、离子强度、电解电压、时间),获得了光致发光强度高于多孔硅的掺镨多孔硅,并讨论了多孔硅和掺镨多孔硅的光致发光机制。 相似文献
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多孔硅跃迁特征的研究 总被引:1,自引:2,他引:1
采用表面光电压谱和光致荧光激发谱对多孔硅的能带结构和跃迁特性进行了系统研究,结果表明,多孔硅泊带隙明显大于单晶硅的带隙,在300-500nm区产观察到几个与制备条件有关的精细结构带,此构带为多孔硅中不同尺寸的硅线能级,这一发现恰与理论计算结果一致,从实验上支持了多孔硅的量子限域模型。 相似文献
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硅基多孔氧化铝膜的整体发光及其化学修饰 总被引:3,自引:0,他引:3
利用电子束蒸发技术在硅衬底上沉积了500nm厚的铝膜,分别在硫酸、磷酸和 草酸中通过阳极氧化技基多孔氧化铝模板通过透射电镜(TEM)观测了形貌,并测 定了它们的光致发光光谱(PL).结果表明利用不同的酸性质得到的多孔氧化铝模 板的发光现象是不完全相同的.基于这种思路,采用了其它的酸性电解质磺基水杨 酸或在酸性电解质中预先加人有机荧光物质罗丹明6G,得到了不同发光特性的硅基 多孔氧化铝膜.结合过去的理论,对上述荧光光谱的来源以及变化进行了讨论.多 孔氧化铝的发光一般都来自于与氧空位有关的缺陷态F~+,但它的复合过程会受到 体系中质能级或其它发光物质的影响.来自电解质中的物质在阳极氧化的过程中会 参与氧化铝膜的形成,进而改变氧化铝膜的成分,并影响其发光过程. 相似文献
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电化学法制备硅纳米线 总被引:1,自引:0,他引:1
Silicon nanowires were synthesized from nanometer silicon dioxide powder under potentiostatic electrolysis at -1.20 V (vs Pt reference) for 4 h in molten CaCl2 at 900 ℃. The morphology, structure and chemical composition of the samples prepared by electroreduction method were characterized by field-emission scanning electron microscopy(FE-SEM), High-resolution transmission electron microscopy(HRTEM) coupled with electron energy dispersive spectroscopy(EDS), laser Raman and X-ray diffraction(XRD). The results revealed that silicon nanowires were crystalline with a diamond cubic structure, the diameter was distributed from 50 nm to 80 nm and the length was generally several micrometers. The formed nanowires basically consisted of silicon monocrystalline and amorphous oxide sheath. 相似文献
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Luminescence Property and Synthesis of Sulfur-doped ZnO Nanowires by Electrochemical Deposition 下载免费PDF全文
"Sulfur-doped zinc oxide (ZnO) nanowires were successfully synthesized by an electric field-assisted electrochemical deposition in porous anodized aluminum oxide template at room temperature. The structure, morphology, chemical composition and photoluminescence properties of the as-synthesized ZnO:S nanostructures were investigated. X-ray diffraction and the selected area electron diffraction results reveal that the as-ynthesized products are single phase with hexagonal wurtzite structure with a highly preferential orientation in the (101) direction. Transmission electron microscopy observations indicate that the nanowires are niform with an average diameter of 70 nm and length up to several tens of micrometers. X-ray photoelectron pectroscopy further reveals the presence of S in the ZnO nanowires. Room-temperature photoluminescences observed in the sulfur-doped ZnO nanowires which exhibits strong near-band-edge ultraviolet peaks at 378 and 392 nm and weak green emissions at 533 and 507 nm. A blue emission at 456 nm and violet emissions at around 406, 420, and 434 nm were also observed in the PL spectrum for the as-synthesized ZnO:S nanowires. The PL spectrum shows that S-doping had an obvious effect on the luminescence property of typical ZnO nanowires." 相似文献
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HanBoZHOU HongZhengCHEN LeiCAO YuRONG JinZhiSUN MangWANG 《中国化学快报》2004,15(11):1365-1368
Europium bisphthalocyanine (EuPc2) nanowires were prepared by electrochemicaldeposition method. Scanning electron microscopy (SEM) images show the evolution of themorphologies of nanowires obtained under different deposition time (Td). The optical properties ofeuropium bisphthalocyanine films were studied by UV-Vis absorption spectra. The morphology of EuPc2 nanowires could be controlled by changing deposition conditions, which provides a usefulmethod to make organic nanowires. 相似文献