第一性原理计算N掺杂对InNbO4电子结构的影响

宽带隙（3.83 eV）半导体光催化材料InNbO4在紫外光作用下具有分解水和降解有机物的性能。最近实验发现了N掺杂InNbO4具有可见光下分解水制氢的活性。为了从理论上解释这一实验现象,本文采用基于密度泛函理论的第一性原理计算了N掺杂对InNbO4的能带结构、态密度和光学性质的影响。分析能带结构可得,N掺杂后在InNbO4的价带（O 2p）上方形成N 2p局域能级,导致电子跃迁所需的能量减小。吸收光谱表明,N掺杂后InNbO4的光吸收边出现了红移,实现了可见光吸收。     

W掺杂ZnO电子结构与光学性质第一性原理计算

采用了基于密度泛函理论(DFT)的第一性原理平面波超软赝势方法,计算本征ZnO和不同W掺杂浓度下W:ZnO体系的电子结构和光学性质.计算结果表明:W掺杂可以提高ZnO的载流子浓度,从而改善ZnO的导电性.掺杂后,吸收光谱发生红移现象,且光学性质变化集中在低能量区,而高能量区的光学性质没有太大变化,计算结果与相关实验结果相符合.最后,结合电子结构定性分析了光学性质的变化.     

Cu掺杂β-Si3N4的力学性能和电子结构的第一性原理研究

采用基于密度泛函的第一性原理方法研究了(Si_3-xCu_x)N₄(x=0,0.25,0.5,0.75,1)晶体的稳定性、力学性能和电子结构,分析了Cu掺杂对β-Si₃N₄力学性能的影响机制.结果表明,(Si_3-xCu_x)N₄为热力学稳定结构,Cu掺杂降低了β-Si₃N₄的稳定性.由弹性常数和Voigt-Reuss-Hill近似看出,(Si_3-xCu_x)N₄满足波恩力学稳定性判据,Cu掺杂使得β-Si₃N₄的体模量、剪切模量和杨氏模量降低,当x=0时,(Si_3-xCu_x)N₄的体模量、剪切模量和杨氏模量最大,分别为234.3 GPa、126.7 GPa和322.1 GPa.根据泊松比和G/B值判断出(...     

第一性原理计算Mo浓度对Mo掺杂BiVO4光催化性能的影响

本文利用基于密度泛函理论的第一性原理研究了不同浓度的Mo掺杂BiVO₄的V位的电子结构、光学性质和光催化性能.缺陷形成能的计算结果说明BiMo_xV_1-xO₄(x=0.0625, 0.125, 0.25)三种掺杂体系都是可以稳定存在的.电子结构计算结果表明：BiMo_xV_1-xO₄(x=0, 0.0625, 0.125, 0.25)四种体系的带隙分别为2.123 eV,2.142 eV,2.160 eV和2.213 eV.掺杂BiVO₄体系的带隙值均大于本征BiVO₄,且带隙随着Mo浓度的增加而增大. BiMo_xV_1-xO₄(x=0.0625, 0.125, 0.25)三种掺杂体系的能带结构全部向低能量区域移动,导致掺杂体系导带底越过费米能级,Mo掺杂BiVO₄后具...     

第一性原理计算A、B位掺杂对NaNbO_3电子结构的影响

钙钛矿结构的NaNbO3具有光催化分解水和降解有机物的性能,但其禁带宽度为3.40eV,因此仅具有紫外光响应.为了实现其可见光响应,本文通过密度泛函理论计算探讨了A位(Ag+)掺杂和B位(Sb5+、V5+)掺杂对NaNbO3的电子结构和光吸收性能的影响.结果表明,掺杂Ag+后,O 2p轨道和Ag 4d轨道杂化进而导致价带位置上移.掺杂Sb5+后,Nb 4d轨道和Sb 5s5p轨道杂化,导致导带位置下移.掺杂V5+后,Nb 4d轨道和V 3d轨道杂化,也导致导带位置下移.基于上述结果,提出了通过A、B位掺杂NaNbO3实现其光吸收红移的机制,本研究对通过掺杂调控NaNbO3光催化材料的光吸收方面有一定的指导意义.     

第一性原理研究B掺杂Mn_4Si_7的电子结构和光学性质

采用基于密度泛函理论的第一性原理计算方法,对未掺杂及B掺杂Mn_4Si_7的电子结构和光学性质进行理论计算.研究结果表明,未掺杂Mn_4Si_7是间接带隙半导体,其禁带宽度为0.786 eV,B掺杂后其禁带宽度下降为0.723 eV. B掺杂Mn_4Si_7是p型半导体材料.未掺杂Mn_4Si_7在近红外区的吸收系数达到10~5 cm~(-1),B掺杂引起Mn_4Si_7的折射率、吸收系数、反射系数及光电导率增加.     

第一性原理计算A、B位掺杂对NaNbO3电子结构的影响

钙钛矿结构的NaNbO3具有光催化分解水和降解有机物的性能,但其禁带宽度为3.40 eV,因此仅具有紫外光响应。为了实现其可见光响应,本文通过密度泛函理论计算探讨了A位（Ag+）掺杂和B位（Sb5+、V5+）掺杂对NaNbO3的电子结构和光吸收性能的影响。结果表明,掺杂Ag+后,O 2p轨道和Ag 4d轨道杂化进而导致价带位置上移。掺杂Sb5+后,Nb 4d轨道和Sb 5s5p轨道杂化,导致导带位置下移。掺杂V5+后,Nb 4d轨道和V 3d轨道杂化,也导致导带位置下移。基于上述结果,提出了通过A、B位掺杂NaNbO3实现其光吸收红移的机制,本研究对通过掺杂调控NaNbO3光催化材料的光吸收方面有一定的指导意义。     

第一性原理研究Al掺杂Mn4Si7的电子结构及光学性质

基于密度泛函理论框架下,利用第一性原理计算方法,对本征Mn₄Si₇以及不同Al掺杂浓度下Mn₄Si₇的电子结构及光学性质进行系统计算分析. Mn₄Si₇晶胞中有16个Mn原子及28个Si原子,建立4种Mn_16-xAl_xSi₂₈(x=0,2,4,8)的掺杂模型,计算结果表明：本征Mn₄Si₇的禁带宽度E_g =0.775 eV,属于间接带隙半导体,Al的掺入导致了Mn₄Si₇费米能级附近的电子结构发生改变,导带向低能方向发生偏移,价带向高能方向发生偏移,禁带宽度由0.775 eV降至零,呈现出金属性.计算还表明,在光子能量低能区域,Al的掺入使Mn₄Si₇的介电函数、折射率、吸收及反射系数等光学性质有所提升,改善了Mn₄S...     

第一性原理研究BiNbO4晶体的电子结构和光学性质

此文用密度泛函理论的平面波赝势方法研究BiNbO4的电子结构和光学性质．获得了BiNbO4是一种禁带宽度为2.74 eV的直接带隙半导体, 价带顶主要是由O-2p态与Bi-6s态杂化而成,而导带底主要是由Nb-4d态构成等有益结果; 还分析得出介电函数、复折射率、能量损失等光学性质与电子态密度、能带结构存在内在的联系．     

CoSi电子结构第一性原理研究

采用基于第一性原理的密度泛函理论全势线性扩展平面波法，首先对CoSi的晶胞参数进行优化计算，CoSi多粒子系统的最低能量为-134684297Ry，此时其晶胞处于最稳态，与最稳态对应的晶胞体积V0等于5899360a.u.3,晶胞参数为a=b=c=04438nm；然后计算了优化后的CoSi的电子结构及Si侧Al掺杂的CoSi075Al025的电子结构并分析了两者的电子结构特征，计算的CoSi电子能态密度与已有的计算结果整体形貌相同，但存在局部差异，Al掺杂后费米面发生了偏移；最后探讨了两者的电子结构对热电性能的影响，Al掺杂可提高CoSi的材料参数B，因此有望提高其热电性能. 关键词： 第一性原理 电子结构 热电性能     

B/N掺杂对双层石墨烯电子特性影响的第一性原理研究

利用平面波超软赝势方法研究了B/N原子单掺杂和共掺杂对双层石墨烯电子特性的影响.对掺杂双层石墨烯进行结构优化,并计算了能带结构、态密度、分波态密度等.分析表明,层间范德瓦尔斯相互作用对双层石墨烯的电子特性有比较明显的影响;B/N原子单掺杂分别对应p型和n型掺杂,会使掺杂片层的能带平移,使得体系能带结构产生较大分裂;双层掺杂的石墨烯能带结构与掺杂原子的相对位置和距离有关,对电子特性有明显的调控作用.其中特别有意义的是,B/N双层共掺杂在不同位置情况下会得到金属性或禁带宽度约为0.3 eV的半导体能带.     

First-principles study of the effect of heavy Ni doping on the electronic structure and absorption spectrum of wurtzite ZnO

The band structures, densities of states and absorption spectra of pure ZnO and two heavily Ni doped supercells of Zn_0.9722Ni_0.0278O and Zn_0.9583Ni_0.0417O have been investigated using the first-principles plane-wave ultrasoft pseudopotential method based on the density functional theory. The calculated results showed that the band gap is narrowed by Ni doping in ZnO; this, is because the conduction band undergoes a greater shift toward the low-energy region than the valence band and because heavier doping concentrations lead to, narrower band gaps. Moreover, the optical absorption edge exhibits a redshift due to the narrowing of the band gap. Heavier doping concentrations leads to more significant redshifts, which is in agreement with the experimental results.     

Effect of La doping on the electronic structure and optical properties of ZnO

The electronic structure and optical properties of ZnO doped with La have been investigated using density functional theory based on first-principles ultrasoft pseudopotential method. The calculated results show that the La doping increases the bandgap of ZnO, in agreement with the experimental results; while the Fermi level shifts into the conduction band, revealing the so-called Burstein-Moss effect. In comparison to pure ZnO, a new peak appears in the imaginary part of dielectric function in the system doped with La and the optical absorption edge has been obviously changed. Moreover, the covalent property of Zn_1−xLa_xO is found to weaken with the increase of La concentration.     

FeVO_4电子结构的第一性原理研究

采用基于密度泛函理论的第一性原理方法研究了三斜结构FeVO_4的结构,基态的能带结构、总态密度和分波态密度.将FeVO_4非共线的螺旋磁结构简化为六种不同的反铁磁结构,通过比较不同自旋构型的总能确定了基态磁结构.能带计算和总态密度结果均显示FeVO_4是能隙为2.19 e V的半导体,与实验结果相符.考虑Fe原子的在位库仑能,FeVO_4的能带结构和态密度都发生变化,说明FeVO_4晶体是一个典型的强关联电子体系.     

A first-principle prediction on the magnetism and electronic structure of Ti-doped CoO with two O vacancies

The electronic structure and magnetism in Co₁₄Ti₂O₁₄ systems are investigated by using the first-principles calculations. The system of 2 × 2 × 2 Co₁₄Ti₂O₁₆ supercell doped with Ti at 9 and 11 position shows a half-metallic character with a high spin polarization. Based on the above system, we remove two O atoms to form two O vacancies. The two O vacancies near Ti have a huge effect on the electronic structure and magnetic properties of Co₁₄Ti₂O₁₄ system. When O vacancies locate at 1 and 3 positions, the system shows a half-metallic character. For the O vacancies at 6 and 8 positions, the system shows a semiconducting character. The system with O vacancies at 9 and 11 positions is a typical spin gapless semiconductor.     

Nitrogen doping concentration influence on NaNbO3 from first-principle calculations

The nitrogen concentration effects on electronic band structures and photocatalytic performance of N-doped sodium niobate (NaNbO₃) have been investigated by first-principles calculations based on density functional theory (DFT). At lower nitrogen doping levels, some localized N 2p states are formed above the valence band (O 2p) in N-doped NaNbO₃, leading to the reduction of the photon transition energy in comparison to that of undoped compound. Under higher doping levels, the N 2p states mix with O 2p states and then move the top of valence band upward. Two possible mechanisms for increasing visible light absorbance in N-doped NaNbO₃ are tentatively put forward according to the doping levels, which would be of importance in understanding and developing the visible-light-sensitive nitrogen-doped multimetal oxide.     

Magnetic and electronic structure calculations of antiferromagnetic Mn2As

Magnetic and electronic structure calculations are performed for Mn₂As with antiferromagnetic (AFM), ferromagnetic (FM), and ferrimagnetic (FIM) spin ordering, using the full-potential linearized augmented plane-wave (FLAPW) method based on the generalized gradient approximation (GGA). It is shown that AFM is the magnetic ground state of Mn₂As, which is in agreement with the experimental observations. At a low temperature (0 K), AFM-FIM transition is also predicted which is consistent with the previous predictions. The ground state stability of the magnetic structure of Mn₂As is attributed to the nearest Mn (I) and Mn (II) antiferromagnetic interaction. The calculated magnetic moment of Mn (II) is found to be in good agreement with the neutron diffraction experiment while there is a disagreement for the magnetic moment of Mn (I). The different magnetic moments are reflected in the electronic structures of Mn₂As and the exchange splitting between Mn atoms is shown to be an intra-atomic effect.     

Optoelectronic properties of two-dimensional GaN adsorbed with H,N and O: A first-principle study

In this paper, we have investigated optoelectronic properties of two-dimensional GaN adsorbed with non-metal atoms: H, N and O based on first-principle. We find that adsorption of H, N and O atom on 2D GaN is achieved by chemisorption, and the most stable adsorption site is at the top of N atom. Band structure of 2D GaN after adsorbing H atom moves to low energy region and two-dimensional GaN is transformed into an n-type semiconductor. After adsorption of N atom, a new impurity energy appears at the Fermi level, and N adatom could induce magnetism into 2D GaN. Static dielectric constants of 2D GaN increase and adsorption spectrums have extend to infrared band when adsorbing H and N. Strong reflection peaks and strong adsorption peaks after adsorption are located at deep ultraviolet range, which is beneficial for optoelectronic application in the deep ultraviolet. Specifically, two-dimensional GaN adsorbed with H atom is more conducive to manufacture of nano-optoelectronic devices.