应用于S频段的宽带高谐波抑制的F类功率放大器的设计

采用InGaP/GaAs HBT工艺设计了一个适用于S频段的宽带F类功率放大器,管芯大小为3×3×0.82mm3。为了同时实现高谐波抑制和宽带,在宽带匹配电路中使用了谐波陷波器。在1.8~2.5 GHz范围内,该匹配网络的输入阻抗约为一个常电阻,二次谐波阻抗约为零而三次谐波阻抗接近无穷大,因此提高了功率放大器的效率。输入测试信号为连续波,测试结果表明该功率放大器在1dB压缩点下的输出功率约为34dBm,PAE约为57%,2到4次谐波分量功率均小于-53dBc。     

A highly linear power amplifier for WLAN

A three-stage power amplifier (PA) for WLAN application in 2.4-2.5 GHz is presented. The proposed PA employs an adaptive bias circuit to adjust the operating point of the PA to improve the linearity of the PA. Two methods to short the 2nd harmonic circuit are compared in the area of efficiency and gain of the PA. The PA is taped out in the process of 2 μm InGaP/GaAs HBT and is tested by the evaluation board. The measured results show that 31.5 dB power gain and 29.3 dBm P_1dB with an associated 40.4% power added efficiency (PAE) under the single tone stimulus. Up to 26.5 dBm output power can be achieved with an error vector magnitude (EVM) of lower than 3% under the 64QAM/OFDM WLAN stimulus.     

一种应用于IEEE 802.11 a_n的高线性度InGaP/GaAs功率放大器

A three-stage 4.8-6 GHz monolithic power amplifier(PA) compatible with IEEE 802.11a/n designed based on an advanced 2μm InGaP/GaAs hetero-junction bipolar transistor(HBT) process is presented.The PA integrates input matching and closed-loop power control circuits on chip.Under 3.3 V DC bias,the amplifier achieves a ~31 dB small signal gain,excellent wide band input and output matching among overall 1.2 GHz bandwidth,and up to 24.5 dBm linear output power below EVM 3%with IEEE 802.11a 64QAM OFDM input signal.     

一种用于手持移动终端的九频段平面印制天线

提出了一种应用于手持移动终端的九频段平面印制天线,该天线结构紧凑,尺寸为20 mm×28 mm×0.8 mm.利用弯折单极子、寄生地枝和耦合分枝激励起了五个谐振模式,并通过三个调节片和位于馈电点附近的阶梯形过渡结构改善了各个谐振模式的阻抗匹配,从而拓展了天线的工作带宽通过分析该天线关键参数对带宽性能的影响,对关键参数进行了优化,得到了满足性能要求的天线结构.天线样品的实测-6 dB阻抗带宽为700～1 008 MHz和1 692～2 984 MHz,覆盖了LTE700/2300/2500,GSM850/900,DCS/PCS/UMTS和2.4-GHz WLAN频段;工作频带内具有良好的辐射性能     

一种简化的VBIC模型和InGaP/GaAs HBT宽带放大器设计

采用一种新的简化VBIC模型对单、多指InGaP/GaAs HBT器件进行建模．测量和模型仿真I-V特性及其在多偏置条件下多频率点S参数对比结果表明，DC～9GHz频率范围内，简化后的模型可对InGaP/GaAs HBT交流小信号特性进行较好的表征．利用建立的模型设计出DC～9GHz两级直接耦合宽带放大器，该放大器增益达到19dB，输入、输出回波损耗分别低于－10dB和－8dB．     

利用ADS设计基于MESFET的宽带功率放大器

文章介绍了一种在无法获取器件大信号模型的情况下采用小信号法设计宽带功率放大器的方法.基于微波砷化镓场效应管,采用小信号设计方法,利用ADS软件,依据宽带功率放大器的各项指标来同步进行电路的设计、优化和仿真,设计出了满足预期期望值的宽带功率放大器.     

一种宽带的InGaP/GaAs HBT 再生频率分频器

A dynamic divide-by-two regenerative GaP/GaAs heterojunction bipolar transistors （HBTs） frequency divider （RFD） is presented in a 60-GHz-fT Intechnology. To achieve high operation bandwidth, active loads instead of resistor loads are incorporated into the RFD. On-wafer measurement shows that the divider is operating from 10 GHz up to at least 40 GHz, limited by the available input frequency. The maximum operation frequency of the divider is found to be much higher than fT/2 of the transistor, and also the divider has excellent input sensitivity. The divider consumes 300.85 mW from 5 V supply and occupies an area of 0.47 × 0.22 mm^2.     

八频段手机天线设计

提出了一种新颖的适应于手机终端上的八频段手机内置天线。利用（planar InvertedF antenna PIFA)天线原理、多带线设计方案,便于实现小型化及多频段的要求,同时分析了一些重要结构参量对天线性能的影响。仿真结果表明：该天线能够工作在八个常用的无线通讯服务频段,同时具有全向性方向图、增益和辐射效率高的特点,且每个工作频点及带宽可通过调节天线中带线的长度来获得。实际加工做了天线并测试,天线的测试结果表明与仿真结果具有较好的一致性。所设计的天线体积小、调整方便,可应用于无线通讯中的手机终端。     

LTE中一种基于负载均衡的自优化切换算法

在3GPP LTE自组织网络（SON）中,面向整体切换性能的自优化算法明显优于面向个别性能的算法.本文针对EWPHPO算法无法对小区负载进行动态调整,也无法对单个过载小区的切换参数进行及时调整,从而导致掉话率等指标不能得到有效控制的问题,提出了兼顾整体切换性能和负载均衡的WPLBHO算法.通过仿真并与EWPHPO算法在相同环境下的仿真结果进行比较,我们的算法在保持切换失败率基本不变的情况下,使掉话率降低约20%、乒乓效应降低约5%,从而使系统整体切换性能（HP）提升约25%;同时,使系统平均过载时间下降近50%.因此我们的算法使系统整体性能得到了明显改善.     

A broadband Doherty power amplifier with harmonic suppression

In this paper, the design and implementation of the broadband, Doherty power amplifier (DPA) with 2nd and 3rd harmonics suppression, with theoretical analysis is presented. In the proposed structure a novel harmonic suppressed Wilkinson power divider used in DPA, which results in harmonic suppression with high level of attenuation. Moreover the proposed DPA has major advantages in terms of the linearity and works on a wideband frequency range (2.1–2.7 GHz) with minimum 40% drain efficiency (DE). The linearity of the proposed DPA is increased extremely, which significant improvement (7 dBm) is achieved from the main amplifier. In the proposed DPA, the main and the auxiliary amplifiers are implemented using Class-AB and Class-C topology respectively with equal MRF6S27015N MOTOROLA transistors in LDMOS technology.     

An on-chip temperature compensation circuit for an InGaP/GaAs HBT RF power amplifier

A new on-chip temperature compensation circuit for a GaAs-based HBT RF amplifier applied to wireless communication is presented.The simple compensation circuit is composed of one GaAs HBT and five resistors with various values,which allow the power amplifier to achieve better thermal characteristics with a little degradation in performance.It effectively compensates for the temperature variation of the gain and the output power of the power amplifier by regulating the base quiescent bias current.The temperature compensation circuit is applied to a 3-stage integrated power amplifier for wireless communication applications,which results in an improvement in the gain variation from 4.0 to 1.1 dB in the temperature range between -20 and +80℃.     

应用于TD-SCDMA移动终端的单片InGaP/GaAs HBT功率放大器

报道了用于TD-SCDMA移动终端的高效率、高线性度HBT功率放大器的研制. 该单片功率放大器采用两级放大结构,内部集成了输入匹配、级间匹配网络以及有源偏置电路,总芯片面积仅为0.91mm×0.98mm. 该功率放大器采用单电源3.4V供电,在高、低功率模式下,PAE分别为43%和16%,增益达到了28.5以及24dB. 当输入QPSK调制信号时,在低输出功率以及高输出功率状态下,1.6MHz/3.2MHz中心频偏处,ACPR分别低于-45dBc/-56dBc 和-39dBc/-50dBc. 本芯片尺寸小,电压稳定性高,性能优越,为低成本化的大规模生产提供了可能性.     

用于高功率激光放大器的单层宽谱增透膜

为了获得用于高功率激光放大器的单层宽带增透膜,采用有机聚合物聚乙烯吡咯烷酮掺杂调控二氧化硅胶体生长制备了粒度分布更宽广的稳定胶体体系,通过提拉镀膜工艺,制备了单层增透膜。采用粒度仪和粘度仪监测胶体的性质,用分光光度计测量了膜层透过率,并用X射线能谱分析了膜层结构。结果表明,聚乙烯吡咯烷酮引入胶体中使得胶体粒度分布更宽,所得膜层具有折射率渐变特性,因而膜层具有宽带增透的效果;膜层在550nm~950nm连续波段内透射率不低于99%。单层宽谱增透膜层不需后处理就可投入使用,膜层性能稳定,满足了激光装置片状放大器的运行要求。     

A modified class-F power amplifier with miniaturized harmonic control circuit

In this paper, a modified class-F power-amplifier (PA) for GSM applications is designed, simulated and tested. In this design, novel symmetrical meandered lines compact microstrip resonant cell (SMLCMRC), is proposed as a new harmonics control circuit (HCC), which resulted in size compression, power added efficiency (PAE) enhancement, power gain improvement, and better linearization in the PA. In this work both of the conventional class-F amplifier and proposed amplifier with SMLCMRC is designed at 1.8 GHz. The measurements show that the proposed PA with SMLCMRC has 72.54% maximum PAE, 17.13 dB gain and the 1 dB compression point (P1dB) is about 35.1 dBm. These results show, 16.5% improvement in PAE, 1.33 dB increment in gain and 1.1 dB improvement in linearity operating range of proposed amplifier compared to the conventional PA.     

基于带通匹配网络理论的宽带高效率功放设计

针对超宽带(2 GHz～4 GHz)高效率功放的设计要求,提出了一种可行的实现方法:采用Load-Pull技术确定最佳输入输出阻抗,并利用基于传输线的带通网络完成了宽带匹配。基于此方法,采用CREE公司GaN HEMT CGH40010进行实际仿真,在输入为27.5 dBm,偏置为28 V时,2 GHz～4 GHz频率范围内功率附加效率优于50%,输出功率高于38.9 dBm,带内增益波动小于2 dB,验证了此方法的有效性。     

一种应用于InGaP/GaAs HBT射频功率放大器的在片温度补偿电路

A new on-chip temperature compensation circuit for a GaAs-based HBT RF amplifier applied to wireless communication is presented.The simple compensation circuit is composed of one GaAs HBT and five resistors with various values,which allow the power amplifier to achieve better thermal characteristics with a little degradation in performance.It effectively compensates for the temperature variation of the gain and the output power of the power amplifier by regulating the base quiescent bias current.The temp...     

用于W-LAN的5.8GHz InGaP/GaAs HBT MMIC线性功率放大器

介绍了一种应用于W-LAN系统的5.8 GHz InGaP/GaAs HBT MMIC功率放大器。该功率放大器采用了自适应线性化偏置电路来改善线性度和效率,同时偏置电路中的温度补偿电路可以抑制直流工作点随温度的变化,采用RC稳定网络使放大器在较宽频带内具有绝对稳定性。在单独供电3.6 V电压情况下,功率放大器的增益为26 dB,1 dB压缩点处输出功率为26.4 dBm,功率附加效率(PAE)为25%。三阶交调系数(IMD3)在输出功率为26.4 dBm时为-19 dBc,输出功率为20 dBm时低于-38 dBc,在1 dB压缩点处偏移频率为20 MHz时邻道功率比(ACPR)值为-31 dBc。     

5W ISM波段InGaP/GaAs HBT功率放大器MMIC

通过分析InGaP/GsAsHBT器件的热学和电学特点,结合HBT大功率放大器芯片在技术性能、稳定性、可靠性及尺寸等方面的要求,通过优化设计HBT功率器件单元和匹配电路,开发了一个大功率、高效率、小尺寸的ISM波段功率放大器单片集成电路。该三级放大器的各级器件单元的发射极面积分别为320μm2,1280μm2,5760μm2,芯片内部包括了输入、输出50Ω匹配电路,面积仅为1.9mm×2.1mm。放大器采用5V单电源供电,在2.4～2.5GHz频率范围内线性增益为27dB,2dB增益压缩点输出饱和功率达到37dBm,功率附加效率为46%。     

SiGe HBT工艺宽带功率放大器

A novel broadband power amplifier fabricated in 0.13 m SiGe HBT technology is realized.The pseudo-differential structure is proposed to avoid the influence of the bonding wire due to the AC virtual ground created at the common emitter node.A compensated matching technique is adopted in interstage matching to expand bandwidth.A multi-stage broadband matching technique is used in an input/output matching network to offer broadband impedance matching,which ensures maximum power transfer.An adaptive bias circuit could improve linearity and efficiency in wide output power level.With 2.5 V power supply,the measured results achieve 96% 3-dB bandwidth(517-1470 MHz),27.2 dB power gain,26.9 dBm maximum output power,19.7 dBm output 1 dB compression point,and 26.7% power added efficiency.     

应用于SAW-less LTE接收机中的高线性度下变频器

本文提出一种基于0.18 μm CMOS 工艺的高线性度下变频器。该下变频器应于直接下变频架构的LTE接收机中,并可以使之省去高成本的深表面波(SAW)滤波器。所提出的下变频器由跨导级、无源混频器、电流缓冲器、跨阻级和直流失调消除环路等五部分组成。其中,电流缓冲器为无源滤波器在高频范围内提供低阻抗负载,减小了由带外阻塞信号引起的电压摆幅,从而改善了下变频器的线性度。与传统电路结构相比,该方法可以提高输入三阶交调截断点(IIP3)4.5 dB以及输入二阶交调截断点(IIP2)11 dB。测试结果表明,该下变频器转换增益为29.5 dB,噪声系数为12.7 dB,IIP3为13 dBm,IIP2大于62 dBm。