用于超薄反射镜热成形的Pt、Pt/Cr分离膜

针对热弯玻璃成形法制备高精度超薄反射镜时Pt分离膜造成的镜片污染问题,研究了Pt/Cr分离膜中不同Cr层厚度对热成形超薄反射镜玻璃基底表面粗糙度的影响.采用厚度为0.3 mm的Schott D263玻璃作为超薄反射镜基底材料,选取Pt、Pt/Cr作为模具和D263镜片之间的分离层材料进行实验.Pt薄膜的厚度为50nm,Cr层厚度分别为5nm、3.5nm、2.5nm、1.5nm,热成形实验采用"直接"复制方式.实验结果表明:Cr层厚度为1.5nm时,成形后模具表面分离膜未发生脱落,镜片表面粗糙度约为0.5nm,与D263镜片初始值接近,能够满足高能X射线望远镜对反射镜基底表面粗糙度的要求.     

Influence of input electrode of micro-channel plate on opening area ratio and its improvement北大核心CSCD

微通道板作为一种关键的电子倍增器件,广泛应用于诸多领域。分析了NiCr膜层作为微通道板的输入端电极时,对微通道板开口面积比的影响,建立了理论模型,计算了膜层厚度、镀膜深度等参数对开口面积比的影响。开展了2种减小开口面积比损失的镀膜研究:一是进行工艺调整,减弱合金蒸发的分馏效应,降低电极膜层的电阻率,开口面积比损失量降低约2%;二是改变镀膜方式,使用Ni、Cr金属单质镀制叠层薄膜,在镀膜过程中调控镍、铬的比例,将输入端电极中镍比例升高,同样可以降低电极膜层的电阻率,在满足面电阻要求的前提下,可减薄输入端膜层至86 nm,与300 nm厚度的常规镍铬合金膜层相比,MCP输入端的开口面积比损失量降低3%~4%,MCP增益提升6%。     

基于铝浸润层的超薄银透明导电薄膜研究北大核心CSCD

超薄银薄膜具有高柔韧性和优良的光电性能,是用于透明导电电极的潜在材料。通过电阻热蒸发技术以金属铝作为浸润层制备超薄银透明导电薄膜。引入铝浸润层降低银薄膜的阈值厚度,使银薄膜在K9玻璃基底上以尽可能低的厚度达到连续。对不同厚度铝浸润层上银薄膜方块电阻进行测试,经SEM图像验证后得出,1 nm铝浸润层对银薄膜具有较好的浸润效果。随后采用相同的工艺在1 nm铝浸润层上制备了不同厚度的银薄膜,透过率和方阻测试结果表明,1 nm铝浸润层上制备的10 nm银薄膜方阻值可达到13Ω/,其在0.4μm~2.5μm波段内透过率可达到50%以上。     

微通道板防离子反馈膜阈值电压特性研究

微通道板(Microchannel-plate,MCP)防离子反馈膜是负电子亲和势光电阴极微光像增强器的特有标志,其主要作用是有效阻止反馈正离子轰击阴极以提高器件工作寿命。微通道板防离子反馈膜的厚度决定了其对电子透过、离子阻挡能力的大小,电子透过能力直接影响图像的对比度和信噪比。根据微通道板防离子反馈膜阈值电压定义和测试原理,对微通道板不同厚度防离子反馈膜、不同工作电压条件下的阈值电压特性进行了测试研究。结果表明:防离子反馈膜的阈值电压随着膜层厚度的增加而增加,两者之间遵循正比的线性关系:Y=3.98X+50;在微通道板线性工作电压范围内,防离子反馈膜的阈值电压随微通道板工作电压的增加而降低,两者之间遵循反比关系。该研究对提高微通道板在负电子亲和势光电阴极微光像增强器中的使用性能具有重要意义。     

SiO2防离子反馈膜的制备及其性能

防离子反馈膜是一种覆盖在微通道板输入端的Al2O3或SiO2连续超薄膜,该膜对延长微光像管的使用寿命具有重要的作用。首先采用射频磁控溅射方法在0.5～1μm的有机载膜上制备Si薄膜,然后在4～6Pa氧气下放电使其贴敷到微通道板上,同时使Si膜氧化和有机载膜分解,最后在微通道板输入面上形成满足设计要求的SiO2防离子反馈膜。该制膜方法工艺稳定,重复性好,成品率超过90%。给出了有、无薄膜时微通道板的电子透过特性曲线和膜层厚度与死电压间关系曲线。对相同厚度为5nm的SiO2和Al2O3防离子反馈膜的电子透过特性进行了分析和比较,得出了SiO2比Al2O3薄膜对电子透过稍好,相应的死电压分别为220V和255V的结论。结合对膜层电子透过和离子阻止特性的综合分析可以看出,SiO2也是制作微通道板防离子反馈膜较为理想的材料之一。为了定量表征微通道板防离子反馈膜的离子阻止能力,最后指出了防离子反馈膜离子透过率的测量是今后该项研究工作的当务之急。     

多孔氧化铝薄膜的制备和光学特性研究

采用阳极氧化法制备了二维有序纳米孔氧化铝膜.研究了工艺参数对多孔薄膜有序性、孔径、膜厚度等的影响，测量了多孔氧化铝有序膜的光透过、光吸收和光发射等光学特性.结果表明，在波长360 nm附近多孔氧化铝有序膜的光透过谱线和光吸收谱线发生突变，波长大于360 nm时，光透过增强；波长小于360 nm时，光吸收增强.多孔氧化铝有序膜的光致发光强度和峰位与激发光波长有关，光致发光谱范围在340~600 nm.     

抗反射膜SiN的热退火特性

本文研究了PECVD抗反射膜SiN的热退火特性。测量结果表明,经过制备GaAs透射光阴极的热压粘结工艺的热退火处理SiN薄膜的折射率增加了约0.1,薄膜厚度减少了约15%.IR透射谱分析表明,这是由于退火后膜中H的释放而引起化学键比例变化所致。此项工作为透射式GaAs光阴极抗反射膜的设计和制备提供了依据。     

激光加速实验超薄类金刚石碳靶的制备

采用过滤阴极真空弧法,制备了满足激光稳相加速机制要求的超薄自支撑类金刚石碳靶。室温下沉积,基片偏压为-32 V,薄膜沉积速率约为每脉冲0.002 nm。选取NaCl膜作脱膜剂,采用漂浮法进行脱膜。打捞板孔径为1 mm时,自支撑厚度范围为5~50 nm,自支撑成功率约为70%。利用拉曼光谱仪及原子力显微镜等仪器,测量了薄膜的结构、表面粗糙度等关键参数。     

微通道板离子壁垒膜粒子阻透特性的蒙特卡罗模拟

在三代微光像管中,微通道板(MCP)输入面上覆盖一层超薄离子壁垒膜(IBF),目的是保护光电阴极,延长像管使用寿命.为了深入研究离子壁垒膜的特性,本文对Al2O3和SiO2两种离子壁垒膜的粒子阻透能力进行了蒙特卡罗模拟,结果表明:5 nm厚Al2O3和SiO2离子壁垒膜的死电压分别为230 ～240 V和220～230...     

金阴极微通道板探测器X射线段的能谱响应

 利用表面镀金阴极膜的微通道板(MCP)构成一种金阴极MCP光电探测器,根据MCP的电阻电容特性提出了一种特殊的能谱响应测量方法。在北京同步辐射3B3中能束线上对该探测器在2.1～6.0 keV能段的谱响应进行了实验标定。以美国NIST绝对定标的美国IRD公司生产的AXUV-100硅光二极管为次级标准探测器,标定金膜厚度分别为25和100 nm的金阴极MCP探测器的能谱响应。经分析发现,阴极材料和MCP材料的元素吸收边是造成量子效率曲线出现突变点的原因。对比两种MCP的能谱响应标定结果,金膜厚度为100 nm探测器的能谱响应高于金膜厚度为25 nm的探测器。     

The protective properties of ultra-thin diamond like carbon films for high density magnetic storage devices

With the increase of magnetic storage density, the thickness of the protective diamond like carbon (DLC) film on the surfaces of head and disk is required as thin as possible. In this paper, the structure, mechanical properties and corrosion and oxidation resistance of ultra-thin DLC films are investigated. The ultra-thin DLC films were deposited by using filtered cathodic vacuum arc (FCVA) technique. The exact thickness of the ultra-thin DLC film was determined by high resolution transmission electron microscope (HRTEM). Raman analysis indicates that the ultra-thin DLC film presents ta-C structure with high sp³ fraction. In the wear test, a diamond tip was used to simulate a single-asperity contact with the film surface and the wear marks were produced on the film surface. The wear depths decrease with film thickness increasing. If the film thickness was 1.4 nm or above, the wear depth was much lower than that of Si substrate. This indicates that the ultra-thin DLC film with thickness of 1.4 nm shows excellent wear resistance. Corrosion tests in water and oxidation tests in air were carried out to investigate the diffusion barrier effect of the ultra-thin DLC films. The results show that the DLC film with thickness of 1.4 nm provides adequate coverage on the substrate and has good corrosion and oxidation resistance.     

膜层厚度对金属薄膜光学常数的影响

从麦克斯韦方程出发,可以得到超薄金属膜层光学常数n、k与其厚度有关系的理论依据。采用电阻热蒸发和电子束热蒸发的方法在K9玻璃基底上分别沉积了不同厚度的Cu膜、Cr膜、Ag膜,由椭偏法检测、Drude模型拟合,获得了不同厚度Cu膜、Cr膜、Ag膜光学常数n、k随波长λ的变化规律。超薄金属薄膜与块状金属的光学常数相差较大,随着薄膜厚度的增加,n、k值趋近于块状金属。通过对样品膜层吸收、色散特性的分析,发现连续金属薄膜在可见光波段对长波的吸收较大,而且相比于介质薄膜平均色散率高10mn～102nm量级。     

Oxidation temperature dependent properties of MgO thin film on alumina

The magnesium oxide thin films were prepared by thermal oxidation (in air) of vacuum evaporated magnesium thin film on alumina. It was found that oxidation temperature (623 K, 675 K and 723 K) and thickness (103 nm and 546 nm) dependent effects were prominently manifested in the surface morphology. Electrical and microwave properties (8-12 GHz) of the MgO thin films were also carried out. X-ray diffraction showed orientation along (2 0 0) and (2 2 0) directions. Flowerlike morphology was observed from SEM and flake like morphology for films of higher thickness oxidized at higher temperatures. The magnesium oxide thin film showed NTC behavior. Microwave transmittance was found to increase with increase in oxidation temperature but was lower than alumina. Frequency and oxidation temperature dependent microwave permittivity was obtained. The microwave dielectric constant varied in the range 8.3-15.3.     

Hydrophilicity of amorphous TiO2 ultra-thin films

The UV-light-induced hydrophilicity of amorphous titanium dioxide thin films obtained by radio frequency magnetron sputtering deposition was studied in relation with film thickness. The effect of UV light irradiation on the film hydrophilicity was fast, strong and did not depend on substrate or thickness for films thicker than a threshold value of about 12 nm, while for thinner films it was weak and dependent on substrate or thickness. The weak effect of UV light irradiation observed for the ultra-thin films (with thickness less than 12 nm) is explained based on results of measurements of surface topography, UV-light absorption and photocurrent decay in vacuum. Comparing to thicker films, the ultra-thin films have a smoother surface, which diminish their real surface area and density of defects, absorb partially the incident UV light radiation, and exhibit a longer decay time of the photocurrent in vacuum, which proves a spatial charge separation. All these effects may contribute to a low UV light irradiation effect on the ultra-thin film hydrophilicity.     

电子束蒸镀ＭＣＰ超薄防离子反馈膜及膜层特性分析

为了进行ＭＣＰ超薄防离子反馈膜的性能评价研究,并使这种膜层具有良好离子阻挡能力,利用电子束蒸发方法,在微通道板（ＭＣＰ）输入面上制备一种超薄Ａｌ２Ｏ３防离子反馈膜,其膜层厚度为２ ｎｍ时仍连续致密。通过对Ａｌ２Ｏ３防离子反馈膜的电子透过特性测试,给出２ ｎｍ及４ ｎｍ厚防离子反馈膜对应的死区电压分别约为１５０ Ｖ及２００ Ｖ;利用Ｍｏｎｔｅ-Ｃａｒｌｏ法模拟分析了Ａｌ２Ｏ３防离子反馈膜的离子阻挡特性,２ ｎｍ及４ ｎｍ厚Ａｌ２Ｏ３防离子反馈膜对碳离子等的阻挡率分别高于４０％及８６％,另外对有无膜的ＭＣＰ电特性进行测试,可以看出镀２ ｎｍ及４ ｎｍ厚的膜后,ＭＣＰ电子增益分别降低了５１％及８１％。     

The effect of cesium metal clusters on the optical properties of cesium iodide thin films

Cesium metal clusters strongly affect the optical properties of cesium iodide thin films. The metal clusters are formed during film formation by thermal evaporation. The cesium cluster of 30–40 nm in the matrix of cesium iodide insulating thin films results in Surface Plasmon Resonance (SPR). The peak position of these SPR peaks showed a red shift. This was shown to be due to changes in the dielectric constant of CsI resulting from the strains in the films caused by the metal clusters themselves.     

无膜微通道板第三代像增强器的可行性及技术途径探究

砷化镓光阴极的量子效率大大优于超二代多碱光阴极,但由于微通道板(MCP)输入面上的离子阻挡膜的存在,第三代像增强器,即使是薄膜第三代像增强器,相比于同时期技术水平的超二代像增强器,在标准测试条件下的信噪比和分辨力等参数上并无明显优势。通过引入MCP噪声因子的概念,对像增强器光阴极量子效率的有效利用率进行了评价。强调了实现无膜MCP第三代像增强器的必要性,并指明了目前的无膜MCP第三代像增强器开发中所存在的问题,对改善MCP耐电子清刷除气能力及进一步地减少MCP中的有害物种含量的有效方法进行了研究,进而明确了实现高可靠性高性能无膜MCP第三代像增强器的可行性和有效技术途径。     

白光干涉测量超薄透明电极ITO薄膜的厚度

随着平板显示技术的发展,透明电极ITO膜的厚度越来越薄。为了测试这种极薄的ITO膜,本文通过改进已有的频域分析算法,以便测试膜厚在20~150 nm之间的ITO膜。与现有算法相比,该算法有效改进了各个波长的位相解析精度。实验结果表明,待测透明电极薄膜的厚度为90~104 nm,其结果和标定值一致,证明了该算法能够测量膜厚小于100 nm的透明电极ITO薄膜。