6.5-ns actively Q-switched Nd:YVO_4 laser operating at 1.34 μm

With a plano-concave cavity,diode-pumped continuous-wave(CW) and actively Q-switched Nd:YVO4 laser operating at 1.34 μm is demonstrated.Maximum CW output power of 4.76 W and Q-switched average output power of 2.64 W are obtained with output coupler(transmission T = 3.9%).For the Q-switching operation,the theoretically calculated pulse energy and pulse width,with a pulse repetition frequency(PRF) range of 5-40 kHz,coincide with the experimental results.With a T = 11.9% output coupler,the maximum peak power of 24.3 kW and minimum pulse width of 6.5 ns are obtained when the PRF is 10 kHz.To the best of our knowledge,this is the shortest actively Q-switched pulse duration ever obtained in a 1.3-μm Nd-doped vanadate laser.     

A 52-mJ Ho：YAG Master Oscillator and Power Amplifier with Kilohertz Pulse Repetition Frequency

We report on a high energy, high repetition rate Ho：YAG master oscillator and power amplifier （MOPA）, res- onantly dual-end-pumped by Tm：YLF lasers at room temperature. At the pulse repetition frequency of i kHz, we demonstrate a maximum energy of 30mJ per pulse with a 28.2ns pulse width in a Ho：YAG oscillator system resonantly double-end-pumped by Tm：YLF lasers. A maximum energy of 52mJ per pulse with a 30.5ns pulse width is achieved in the Ho： YA G amplifier, corresponding to a peak power of approximately 1.7 MW. The output wavelength is at 2090.6nm and 2096.9nm, and a beam quality factor of M2-2.1 is achieved.     

A Diode-Stack End-Pumped Electro-Optically Q-Switched Nd:YAG Slab Oscillator--Amplifier System

A laser diode-stack end-pumped electro-optically Q-switched Nd：YAG slab oscillator-amplifier system with neardiffraction-limited output is demonstrated by a stable-unstable hybrid resonator. The average power of 100 W at a repetition rate of lOkHz with a pulse width 14.7ns and average power of 76.3 W at a repetition rate of 5kHz with a pulse width of 10.2ns are measured. At the repetition rate of 10 kHz and at an output power of 89 W, the beam quality factors M^2 in the unstable and stable directions are 1.3 and 1.5, respectively.     

A Gain-Switched Fe:ZnSe Laser Pumped by a Pulsed Ho,Pr:LLF Laser

We demonstrate a gain-switched Fe:ZnSe laser pumped by a 2958 nm pulsed Ho,Pr:LLF laser. The maximum single pulse energy is 16.4uJ with a minimum pulse duration of 13.9 ns at the pulse repetition frequency of1 Hz when the Fe:ZnSe crystal is cooled to 77 K by liquid nitrogen, corresponding to a slope efficiency of 22.9%.The central wavelength and FWHM linewidth are 3957.4 nm and 23.2 nm, respectively. The output energy monotonically decreases as the crystal temperature increases in the range 77–293 K.     

Development of afterglow time test system for nanosecond fluorescent screen of low-level-light image intensifier北大核心CSCD

The time characteristics of fluorescent screen is one of the important parameters to evaluate the performance of image intensifier. At present, there is no measurement method for the afterglow time of nanosecond fluorescent screen of low-level-light image intensifier. Based on the traditional test scheme of image intensifier afterglow time, a afterglow time test system for nanosecond fluorescent screen was developed. This system used a high-speed signal generator with the sampling rate of 250 MHz to complete the excitation of the laser diode light pulse, and a photomultiplier tube was used with the descending time of 0.57 ns to complete the photoelectric conversion of the fluorescent screen light signal. The weak photocurrent signal of μA magnitude was amplified and converted to a single-terminal differential circuit to complete the AD conversion in AD9684. Then the digital luminance information of the fluorescent screen was stored in the double data rate SDRAM (DDR) unit after field programmable gate array (FPGA), and the host computer sent instructions to read the DDR memory. The USB3.0 high-speed transmission protocol was used to transmit data to the host computer. In the data processing, the Kalman filtering and fast finding falling edge algorithm were used to realize the accurate measurement of noise filtering from collected data and afterglow time. The test results show that the proposed afterglow time test system for nanosecond fluorescent screen can effectively test the image intensifier with ultrafast optical characteristics. The afterglow test results of P47 phosphor reaches 118.094 4 ns, and the repeatability reaches 2.08%. © 2022 Editorial office of Journal of Applied Optics. All rights reserved.     

Diode end-pumped self-Q-switched and mode-locked Nd,Cr：YAG /KTP green laser

We first experimentally demonstrate a laser-diode end-pumped self-Q-switched and mode-locked Nd,Cr:YAG green laser with a KTP crystal as the intra-cavity frequency doubler. The device produces an average output power of 680 mW at 532 nm. The corresponding pulse width of the Q-switched envelope of the green laser is 170±20 ns. The mode-locked pulses have a repetition rate of approximately 183 MHz and the average pulse duration is estimated to be around sub-nanosecond. It is found that the intra-cavity frequency doubling greatly improves the modulation depth and stability of the mode-locked pulses within the Q-switched envelope.     

A Passive Q-Switched Microchip Er/Yb Glass Laser Pumped by Laser Diode

A laser-diode-pumped 1.54-μm passive Q-switched erbium doped glass laser was reported. We utilize a laser diode with wavelength of 973nm to pump a 1-mm Er/Yb co-doped phosphate glass with the erbium and ytterbium concentrations of 1 wt.% and 21 wt.%, respectively. A Co^2＋ ：MgAl2O4 slab crystal was used as a passive Q- switcher. Q-switched pulses with repetition frequency of 800Hz, width of 7.4ns, peak power of 2.2kW and average power of 13.3 m W were obtained when absorbed pump power was 4 75 m W. A sandwich structure of the Q- switched microchip Er/Yb glass laser was demonstrated, which shows shorter pulse width of 6.8 ns. Dependences of pulse duration and repetition frequency on pump power were also investigated.     

Demonstration of fiber pulsed light source at 1.6μm with adjustable pulse duration

A novel practical 1.66-μm pulse light source with adjustable pulse duration is proposed. A 2.5-km Raman fiber is placed into a ring type Q-switched erbium-doped fiber laser (Q-EDFL), serving as both delay line fiber and Raman gain medium so that in addition to the wavelength shifted to 1.6μm, the pulse duration and the buildup time can be relatively extended. By properly controlling the fall edge of the acousto-optic switch (AOS), the pulse duration of 30-345 ns for～770-Hz repetition frequency with power of 1-1.6 W is achieved.     

Highly efficient single longitudinal mode-pulsed green laser

A novel design for a highly efficient 1-kHz single-frequency green laser is proposed.An efficient singlefrequency laser pulse output at 532-nm wavelength may be obtained by combining the injection seeding with intracavity frequency doubling in a compact U-shaped cavity formed by two plano dichroic mirrors in an end-pumping arrangement.The laser is capable of producing green pulses with a total energy of 6.3 mJ at a pulse repetition rate of 1 kHz.The pulse width is about 10 ns and the optical-optical efficiency from the 808-nm pump source to the 532-nm green output is around 12.7%.     

High-peak-power passively Q-switched 1.3 μm Nd:YAG/V~(3+):YAG laser pumped by a pulsed laser diode

We demonstrate a high-pulse-energy, short-pulse-width passively Q-switched(PQS) Nd:YAG∕V3t:YAG laser at 1.3 μm, which is end-pumped by a pulsed laser diode. During the PQS regime, a maximum total output pulse energy of 3.3 m J is obtained under an absorbed pump pulse energy of 21.9 m J. Up to 400 μJ single-pulse energy is realized with the shortest pulse width of 6.16 ns and a pulse repetition frequency of 34.1 k Hz,corresponding to a peak power of 64.9 k W. The high-energy laser pulse is operated in the dual wavelengths of 1319 and 1338 nm, which is a potential laser source for THz generation.     

基于磁隔离驱动的亚微秒高压脉冲电源

为满足不可逆电穿孔对高压纳秒脉冲电源的需求,并且突破电源模块耐压的限制,提出了一款以正极性Marx为主电路、具有ns级前沿的高重复频率的亚微秒高压脉冲电源。该脉冲电源使用光纤传输信号,经过驱动芯片放大信号后,利用磁芯变压器传递驱动信号给MOSFET。磁芯变压器给电路提供了磁隔离,使驱动电路不会受高压输出的影响,提高了电路的耐压水平。驱动电路设计简单,所需元器件较少,可提供负压偏置,使开关管可靠关断,提高电路的抗电磁干扰能力,保障电路稳定运行。此电源由16级电路构成,实验表明:在10 kΩ纯阻性负载上,当输入电压为630 V时,即可得到10 kV的高压输出。其最小脉宽为300 ns,频率1 Hz～10 kHz可调。该脉冲电源结构紧凑,能够做到输出电压、脉宽、频率可调。研究了磁芯材料和匝数对驱动脉宽的影响。结果表明:匝比的增加会影响信号脉宽,在一定的条件下,单匝电感量的差异和磁芯材料的不同对信号脉宽的影响较小。     

600 A重复频率脉冲恒流源研制北大核心CSCD

针对国内脉冲恒流源幅值较小、重复频率较低等问题,设计了基于电流闭环反馈控制的恒流电路,建立了相应的数学模型,并采用Pspice仿真验证了电路的功能,最终研制了1台600 A重复频率工作的脉冲恒流电源。电源采取储能放电配合高速开关的工作模式,使用功率场效应三极管作为线性调整开关,可大范围自动恒流,适用于激光二极管负载。输出的脉冲电流幅值最高600 A,上升时间小于40μs,电压幅值最高320 V,脉宽100~600μs可调,工作重复频率最高200 Hz。电源体积较小,结构紧凑,效率可达90%以上。     

脉冲激光器大电流窄脉冲驱动设计

介绍了利用金属氧化物场效应管产生大电流窄脉冲来驱动激光二极管的原理,推导出驱动金属氧化物场效应管峰值驱动电流的计算公式和开通时间的估算公式,通过仿真总结出影响驱动电源脉冲电流的脉宽、幅度和振荡的主要因素,理论和仿真结果表明,器件的寄生电感、电路走线电感和负载寄生电感对电流影响较大。实验结果显示,在供电高压为200 V时,金属氧化物场效应管开通时间为2 ns;激光二极管驱动电流上升时间小于10 ns,脉宽为15~100 ns,幅度为0~50 A连续可调,频率为0~50 kHz。     

全固态电感储能形成线纳秒短脉冲功率调制器北大核心CSCD

全固态电感储能型脉冲形成线调制器是实现高重复频率、电压高增益和短脉冲输出的一种全新方案。但开关非理想的动态特性和传输线固定的物理空间尺寸限制,难以实现高压短脉冲的产生和调控。为解决上述难题,通过电磁场分析建立了碳化硅场效应器件开关驱动模型,发现高速驱动和开关器件低寄生参数能有效改善开关动态特性,提出了板上高速开关及驱动集成设计解决方案。基于波过程分析和多开关时序逻辑控制理论,提出多开关削波电路拓扑方法和主动负载阻抗调制技术。实验结果表明,该调制器可产生上升时间2.1 ns,下降时间3.5 ns,脉冲宽度5.1 ns的方波短脉冲,并且脉冲宽度5~20 ns连续可调。10级叠加后验证了调整器高压能力,初级储能充电电压25 V时,电压增益可达336倍,重复频率200 kHz。     

适用于探地雷达应用的低振铃单周期脉冲发生器

设计了一种新型的适用于道路检测探地雷达的单周期脉冲发生器。该脉冲发生器包含驱动电路、阶跃恢复二极管(SRD)脉冲形成电路和脉冲整形电路三部分。驱动电路可以使TTL形式的触发脉冲变为电流更大的快前沿脉冲,用来形成给后级电路的驱动脉冲;SRD脉冲产生电路选取渡越时间较小的阶跃恢复二极管结构,通过对前级电路产生的驱动脉冲整形得到负极性高斯脉冲,然后利用微带短路线、肖特基二极管和电容并联实现生成单周期脉冲和振铃抑制的功能,提高超宽带天线辐射的效率以及测量信噪比。测量结果表明,在1 MHz脉冲重复频率的情况下,峰峰值最大为23 V,脉冲半高宽为138 ps,振铃水平为1.25%,而当脉冲重复频率提高到5 MHz,该脉冲发生器产生脉冲波形幅度和带宽基本没有太大变化。这些特征说明,该脉冲发生器具有很高的频率稳定性,且在高分辨率探测应用情景中将会有很好的表现。     

一种基于光纤阵列的高速电光开关系统

提出了一种基于光纤阵列的新型电光开关,设计了高速电光选通电路.经实验测得,高压选通电路可获得电压幅度6 000 V可调,前、后沿小于30 ns,触发晃动小于1 ns,脉冲宽度为100 ns可调的高压矩形脉冲.用小口径电光晶体实现了大的通光口径、快的开关速度的惯性约束核聚变驱动系统光开关.选出了在100 ns标称开关速度内所关心的光信息,满足了惯性约束核聚变驱动系统中大的通光口径和均匀性的要求.     

基于FPGA的高速电光选通系统设计

介绍了一种获取高速调制电信号的新方法－基于FPGA的高速电光选通系统.此系统分为选通脉冲和高压调控两个模块.选通脉冲模块由高速信号放大、FPGA延时、可控延迟传输线三个部分组成.利用FPGA高密度、高可靠性、可反复擦写和可以现场编程、灵活调制的特点,将整个系统的主要控制部分集成在FPGA中,并将延时分为数字延时和模拟延时两部分.然后利用FPGA实现数字延时,可控延时线实现模拟延时.经试验检测,高压部分可以产生重复频率1 Hz~1 kHz,步进1 Hz,延时范围为0~1 μs,步进为1 ns,幅度为8 000 V,前沿和后沿小于10 ns,抖动小于1 ns的高压矩形电脉冲,从而满足各种电光调制系统中的需要.     

用于锁模Nd：YAG激光器的单脉冲开关

 锁模Nd:YAG激光器选取单脉冲时，通常采用KD*P普克尔盒。 波长1.06μm的激光半波电压为6.6kV。应用冷阴极闸流管KN-22作为开关线路比较广泛，但近年来我们改用MOS场效应管线路代替KN-22，该线路性能稳定可靠，输出脉冲幅度为－6.6～－8kV，脉冲宽度5～10ns可调，触发晃动小于0.5ns，触发延时30～40ns，单脉冲选出率为100％。经长时间使用未发现异常，此线路也可在削波器及脉冲剪切等技术中应用。     

MHz 高压脉冲电源设计

设计了一款基于金属氧化物半导体场效应晶体管(MOSFET)开关的高压高频脉冲发生器,采用多个以光纤信号隔离触发的串联MOSFET作为高压开关,并由FPGA提供控制信号。该发生器由相同的MOSFET管部分组成,并联并按顺序触发,与参考信号同步。所述电路和工作模式克服了MOSFET管发生器的功耗限制,使脉冲重复率显著提高。详细介绍了该MHz高压脉冲发生器的工作原理和制作过程,然后进行了初步试验,验证了该发生器的性能。该电路在1 MHz的高重复率下,输出上升时间为十几ns、脉宽为百ns、电压幅值大于1 kV的平顶脉冲。     

变象管、双近贴象增强器及带微通道板光电倍增管的快门选通电路

本文主要简介我国变象管、双近贴象增强器毫微秒分幅相机的研制现状,并讨论这些相机的快门脉冲发生器电路。同时还介绍了用于带微通道板光电倍增管的选通电路。这些电路作适当修改后可用于微光硅靶摄象管的控制,高压电器特性试验,毫微秒脉冲源以及激光调制等场合中。