SiGe (Ge-dot) heterojunction phototransistors for efficient light detection at 1.3–1.55 μm

The aim of this work is to develop a Si/SiGe HBT-type phototransistor with several Ge dot layers incorporated in the collector, in order to obtain improved light detectivity at 1.3–1.55 μm. The MBE grown HBT detectors are of n–p–n type and based on a multilayer structure containing 10 Ge-dot layers (8 ML in each layer, separated by 60 nm Si spacer) in the base-collector junction. The transistors were processed for normal incidence or with waveguide geometry where the light is coupled through the edge of the sample. The measured breakdown voltage, BV_ceo, was about 6 V. Compared to a p–i–n reference photodiode with the same dot layer structure, photoconductivity measurements show that the responsivity is improved by a factor of 60 for normal incidence at 1.3 μm. When the light is coupled through the edge of the device, the detectivity is even further enhanced. The measured photo-responsivity is more than 100 and 5 mA/W at 1.3 and 1.55 μm, respectively.     

Investigation of 1.3 μm emission in Nd-doped bismuth-based oxide glasses

Nd₂O₃-doped 43Bi₂O₃–xB₂O₃–(57−x)SiO₂–1.0Nd₂O₃ (x=57, 47, 39, 28.5, 19.5, 10, 0 mol%) bismuth glasses were prepared by the conventional melt-quenching method, and the Nd³⁺: ⁴F_3/2→⁴I_13/2 fluorescence properties had been studied in an oxide system Bi₂O₃–B₂O₃–SiO₂. The Judd–Ofelt analysis for Nd³⁺ ions in bismuth boron silicate glasses was also performed on the basis of absorption spectrum, and the transition probabilities, excited-state lifetimes, the fluorescence branching ratios, quantum efficiency and the stimulated emission cross-sections of ⁴F_3/2→⁴I_13/2 transition were calculated and discussed. The stimulated emission cross-sections of 1.3 μm were quite large due to a large refractive index of the host. Although the effective bandwidths decreased with increasing SiO₂ content, quantum efficiencies and stimulated emission cross-sections enhanced largely with increasing SiO₂ content.     

Infrared absorption by acetylene in the 12–14 μm region at low temperatures

Spectral transmittance measurements have been performed on N₂-broadened lines of ¹²C₂H₂ and ¹²C¹³CH₂ in the 13.7 μm region at 153,200, and 296 K. From line-by-line comparison of observed and computed spectral transmittance, line strengths, half-widths, and their dependence on temperature have been deduced for conditions relevant to the atmospheres of Jupiter, Saturn, Titan, and Earth.     

Single InAs/InP quantum dot spectroscopy in 1.3–1.55 μm telecommunication band

We present an optical spectroscopy and photon correlation measurement at telecommunication wavelengths performed on single InAs/InP quantum dots. Two main approaches brought high optical quality: an application of a ‘double-cap’ growth method to metalorganic chemical vapor deposition, and fabrication of a small mesa structure using low-damage wet chemical etching. Sharp and discrete exciton transition lines have been observed on the single quantum dots, which widely cover the spectral range of 1.3–1.55 μm. Using a pulsed excitation source and gated single-photon detection modules, we observed a photon antibunching behavior for an isolated exciton emission line, indicating nonclassical light emission near the wavelength of 1.3 μm.     

GaN/AlN quantum dot photodetectors at 1.3–1.5 μm

We have demonstrated GaN/AlN quantum dots (QD) photodetectors, relying on intraband absorption and in-plane carrier transport in the wetting layer. The devices operate at room temperature in the wavelength range 1.3–1.5 μm. Samples with 20 periods of Si-doped GaN QD layers, separated by 3 nm-thick AlN barriers, have been grown by plasma-assisted molecular-beam epitaxy on an AlN buffer on a c-sapphire substrate. Self-organized dots are formed by the deposition of 5 monolayers of GaN under nitrogen-rich conditions. The dot height is 1.2±0.6 to 1.3±0.6 nm and the dot density is in the range 10¹¹–10¹² cm⁻². Two ohmic contacts were deposited on the sample surface and annealed in order to contact the buried QD layers. The dots exhibit TM polarized absorption linked to the s–p_z transition. The photocurrent at 300 K is slightly blue-shifted with respect to the s–p_z intraband absorption. The responsivity increases exponentially with temperature and reaches a record value of 10 mA/W at 300 K for detectors with interdigitated contacts.     

Lasing and spontaneous emission characteristics of 1.3 μm In(Ga)As quantum-dot lasers

We demonstrate that excellent 1.3 μm QD laser performance can be achieved with the use of a high-temperature step during the growth of the GaAs spacer layers. An optimised laser structure exhibits a very low room-temperature J_th and operates CW from the ground-state up to at least 105 °C. Spontaneous emission measurements indicate that the high-temperature performance is limited by non-radiative processes rather than by the thermal excitation of carriers into higher energy QD states.     

STEM-study of 1.3 μm InAs/InGaAs quantum dot structures

We investigated InAs-Dots-in-a-well structures emitting near 1.3 μm by bright field and Z-contrast mode in a scanning transmission electron microscope. The chemically sensitive Z-contrast mode is found to give direct information on the actual position of the InAs-Dots inside the embedding well, while the bright field mode monitors the strain fields. Comparing a series of structures, we found that the most symmetric design is realized by an nominally asymmetric growth. These symmetric structures exhibit the best performance with respect to photoluminescence spectra and laser threshold current density.     

Megawatt peak power 8–13 μm CdSe optical parametric generator pumped at 2.8 μm

Infrared pulses, continuously tunable in the 8–13 μm range, and with up to 1 MW peak power, have been achieved using single-stage frequency conversion in a CdSe travelling-wave optical parametric generator, pumped by 100 ps pulses from an actively mode-locked, Q-switched and cavity dumped 2.8 μm Cr,Er:YSGG laser. The external quantum conversion efficiency reached 10%.     

Radiative properties of cirrus clouds in the infrared (8–13 μm) spectral region

Atmospheric radiation in the infrared (IR) 8–13 μm spectral region contains a wealth of information that is very useful for the retrieval of ice cloud properties from aircraft or space-borne measurements. To provide the scattering and absorption properties of nonspherical ice crystals that are fundamental to the IR retrieval implementation, we use the finite-difference time-domain (FDTD) method to solve for the extinction efficiency, single-scattering albedo, and the asymmetry parameter of the phase function for ice crystals smaller than 40 μm. For particles larger than this size, the improved geometric optics method (IGOM) can be employed to calculate the asymmetry parameter with an acceptable accuracy, provided that we properly account for the inhomogeneity of the refracted wave due to strong absorption inside the ice particle. A combination of the results computed from the two methods provides the asymmetry parameter for the entire practical range of particle sizes between 1 and 10,000 μm over the wavelengths ranging from 8 to 13 μm. For the extinction and absorption efficiency calculations, several methods including the IGOM, Mie solution for equivalent spheres (MSFES), and the anomalous diffraction theory (ADT) can lead to a substantial discontinuity in comparison with the FDTD solutions for particle sizes on the order of 40 μm. To overcome this difficulty, we have developed a novel approach called the stretched scattering potential method (SSPM). For the IR 8–13 μm spectral region, we show that SSPM is a more accurate approximation than ADT, MSFES, and IGOM. The SSPM solution can be further refined numerically. Through a combination of the FDTD and SSPM, the extinction and absorption efficiencies are computed for hexagonal ice crystals with sizes ranging from 1 to 10,000 μm at 12 wavelengths between 8 and 13 μm.

Calculations of the cirrus bulk scattering and absorption properties are performed for 30 size distributions obtained from various field campaigns for midlatitude and tropical cirrus cloud systems. Ice crystals are assumed to be hexagonal columns randomly oriented in space. The bulk scattering properties are parameterized through the use of second-order polynomial functions for the extinction efficiency and the single-scattering albedo and a power-law expression for the asymmetry parameter. We note that the volume-normalized extinction coefficient can be separated into two parts: one is inversely proportional to effective size and is independent of wavelength, and the other is the wavelength-dependent effective extinction efficiency. Unlike conventional parameterization efforts, the present parameterization scheme is more accurate because only the latter part of the volume-normalized extinction coefficient is approximated in terms of an analytical expression. After averaging over size distribution, the single-scattering albedo is shown to decrease with an increase in effective size for wavelengths shorter than 10.0 μm whereas the opposite behavior is observed for longer wavelengths. The variation of the asymmetry parameter as a function of effective size is substantial when the effective size is smaller than 50 μm. For effective sizes larger than 100 μm, the asymmetry parameter approaches its asymptotic value. The results derived in this study can be useful to remote sensing studies of ice clouds involving IR window bands.     

High-speed optical digital transmitter/receiver module operating at 1.3 μm wavelength

Taking benefit of optical fibers' wide bandwidth and low attenuation, research and development were conducted in order to apply fiber optics to public telecommunications' networks mainly for long-distance and large-capacity transmissions. However, application of fiber has rapidly spread toward cornrnunication networks having relatively short transmission distances (within several kilometers) such as local area networks (LAN) and computer networks. Thus, requirements for the fiber optic transmitters and receivers used as electro-optic transducers, such as small-size, low-price, high-reliability and low-supply voltage operations, become stricter than those of the public telecommunication network.     

High-power and high-frequency operation of InGaAsP/InP lasers at 1.3 μm

A simultaneous operation of a semiconductor laser at high power and high speed was demonstrated in a buried crescent laser on p-InP substrate. In a cavity length of 300 μm, a maximum continuous wave (CW) power of 130 mW at room temperature was obtained in a junction-up mounting configuration. A 3dB bandwidth in excess of 12 GHz at an output power of 52 mW was observed.     

GaInAsSb/AlGaAsSb lasers in the wavelength range between 2.73 μm and 2.93 μm

Compressively strained multiple quantum well lasers in the GaInAsSb/AlGaAsSb material system are reported. Indium concentrations between 40% and 47.5% were chosen for the GaInAsSb quantum wells. Compressive strains varied between 1.16% and 1.43%. The lasers worked continuous wave at room temperature up to a wavelength of 2.81 μm. For a laser with 2.93 μm wavelength continuous wave operation was found up to a temperature of −23°C. This laser worked in pulsed operation at 15°C.     

MBE growth of multiple quantum wells with room-temperature exciton peaks at 1.3 μm

multiple quantum wells have been grown lattice matched on InP substrates by taking into account the time dependence of the fluxes as the shutters open and close. RHEED oscillations are observed and used to calibrate layer thicknesses and growth quality. The half width of the lowest exciton peak is 12 meV.     

The fabrication and performance of 1.3μm DFB EMBH lasers with coplanar contacts

The fabrication and performance characteristics of coplanar contact etched mesa-buried heterostructure (EMBH) distributed feedback (DFB) lasers emitting at 1.3μm wavelength are described. The processing was designed such that the lasers could be evaluated as coplanar contact or conventional (top/bottom) contact devices. The threshold current was as low as 14mA and the 3dB small signal response was as high as 9.4 GHz. Both these properties showed negligible differences when the device was biased either coplanarly or conventionally.     

Common black coatings – reflectance and ageing characteristics in the 0.32–14.3 μm wavelength range

The diffuse and regular reflectances of five optically absorbing coatings frequently used in optical systems, were measured over the 0.32–14.3 μm wavelength range, before and after exposure to heat and intense optical radiation. The measured coatings included Nextel Velvet Black, an anodised coating and NPL Super Black. The anodised coating exhibited substantial variations in its diffuse and regular reflectance values after thermal and simulated solar ageing. Solar and thermal ageing of the Nextel Velvet Black resulted in increases of its reflectance. However, thermal ageing tended to decrease the reflectance of the other paint samples examined. Thermal and solar ageing of the NPL Super Black resulted in only minor changes in its reflectance characteristics. All measurements are traceable to the UK National Standards.     

Nitrogen-broadened lines of monodeuterated methane in the 4.5 μm region at low temperatures

Nitrogen-broadened halfwidths of rotational lines of CH₃D have been deduced from spectral transmittance measurements in the v₂-fundamental at 100 and 200 K with a spectral resolution of 0.06 cm^-1. The line widths appear to be 1.5 times larger and exhibit the same 1/T dependence on temperature as lines of CH₄.     

Development of a 4–15 μm infrared GaAs hyperspectral QWIP imager

In the on-going evolution of GaAs quantum well infrared photodetectors (QWIPs) we have developed a four band, 640 × 512, 23 μm × 23 μm pixel array which we have subsequently integrated with a linear variable etalon (LVE) filter providing over 200 spectral bands across the 4–15.4 μm wavelength region. This effort was a collaboration between NASA’s Goddard Space Flight Center (GSFC), the Jet Propulsion Laboratory (JPL) and the Army Research Laboratory (ARL) sponsored by the Earth Science Technology Office of NASA. The QWIP array was fabricated by graded molecular beam epitaxial (MBE) growth that was specifically tailored to yield four distinct bands (FWHM): Band 1; 4.5–5.7 μm, Band 2; 8.5–10 μm, Band 3; 10–12 μm and Band 4; 13.3–14.8 μm. Each band occupies a swath that comprises 128 × 640 elements. The addition of the LVE (which is placed directly over the array) further divides the four “broad” bands into 209 separate spectral bands ranging in width from 0.02 μm at 5 μm to 0.05 μm at 15 μm. The detector is cooled by a mechanical cryocooler to 46 K. The camera system is a fully reflective, f/4.2, 3-mirror system with a 21° × 25° field of view. The project goals were: (1) develop the 4 band GaAs QWIP array; (2) develop the LVE and; (3) implement a mechanical cryocooler. This paper will describe the efforts and results of this undertaking with emphasis on the overall system characteristics.     

Temperature dependence of the 1.064-μm stimulated emission cross-section of Cr:Nd:YAG crystal

The fluorescence emission spectra of Cr:Nd:YAG crystal are measured and the effective stimulated emission cross-section of the crystal is obtained from −80 to +80 °C. A linear temperature dependence between −80 and +80 °C is reported for the 1.064-μm peak stimulated emission cross-section of Cr:Nd:YAG crystal.     

Stimulated four-photon mixing and efficient polychromatic visible light generation in SiO2-based single-mode optical fibers pumped at 1.319 μm

The generation of near-infrared and intense visible light through stimulated multi-wave mixing processes in single-mode silica-based optical fibers pumped by a Q-switched and mode-locked Nd:YAG laser operated at 1.319 μm is described. The experimental results show that intense infrared light around 1.2 μm is produced via selp-hase-matched four-photon mixing at the minimum group velocity dispersion region of pure SiO₂-core and P₂O₅-doped silica fibers. In the visible spectral region, from 580 nm to 600 nm, 20 W peak power 100-ps pulses were generated by pumping single spans of single-mode P₂O₅-doped and undoped SiO₂-core fibers with 1.319-μm laser pulses. The signal light generated in such fibers propagated in the LP₀₂ fiber mode and exhibited a threshold power that depended upon the fiber length and a critical length that was power dependent. Also, it exhibited an asymmetrical spectrum of a few nanometers bandwidth, with a long tail toward high frequencies. For GeO₂-doped silica-based fibers, a multiple-wavelength visible signal propagating in several high-order fiber modes was generated.