丝网印刷法制备纳米银线透明导电薄膜

以高纯纳米银线作为导电介质,采用低成本丝网印刷法在普通透明玻璃基底上制备纳米银线薄膜层。经低温退火处理后,采用冷场发射扫描电子显微镜对薄膜的形貌进行表征;分别采用紫外可见分光光度计和四探针测试仪对薄膜的光学透过率和导电性能进行测试。实验系统研究了印刷浆料中纳米银线的含量、印刷层数和退火温度对薄膜的光学透过率和导电性能的影响。当印刷浆料中纳米银线的含量为3%(w/w),印刷层数达到3层,经低温275℃退火后,可制备出光电性能良好的纳米银线薄膜,该薄膜最大可见光透过率为39.4%,表面方块电阻仅为25.6Ω·□^-1。     

纳米银线可拉伸透明导电薄膜研究进展:材料、器件与应用

随着电子产品不断向可穿戴和便携式方向发展,在可拉伸基底上制备柔性电子器件引起了人们极大的兴趣.作为电子器件的重要部件之一,可拉伸透明导电薄膜成为重要的研究方向.传统的铟锡氧化物材料因其柔韧性差等问题不能在柔性器件中应用.纳米银线作为一种新型的一维纳米材料,不仅具备纳米材料的尺寸效应和较高的电导率,同时又赋予了可拉伸透明...     

基于印刷电子的透明导电薄膜研究进展

透明导电薄膜是一种在可见光范围内透光率较高、导电性优良的薄膜材料.近年来随着智能手机、平板电脑等电子产品日益普及,透明导电薄膜受到越来越多的关注.本文分析了目前占据市场统治地位的掺锡氧化铟透明导电薄膜的缺点以及近年来国内外对透明导电薄膜开展的研究工作,总结了目前在印刷电子领域透明导电薄膜的主要研究方向,一方面是在传统金属氧化物薄膜基础上的改进;另一方面是寻找新型透明导电薄膜材料,并分别综述了各个研究方向的最新进展.     

浸渍聚合法制备透明导电聚苯胺薄膜的研究

采用浸渍聚合法制备透明导电的聚苯胺薄膜，并系统地研究了基片、反应温度、氧化剂和掺杂剂等因素对聚苯胺透明导电薄膜的电学和光学性能的影响．在最佳的制备条件下，所得薄膜的室温电导率可达１～５Ｓ／ｃｍ．当厚度为０５μｍ时，在４５０至６５０ｎｍ的透光窗口内，该薄膜的透光率可达８０％．借助结构表征讨论了薄膜的生长机理和它的结构组成．     

碳纳米管透明导电薄膜的可控制备

碳纳米管具有优秀的导电性能、 透光性能和十分突出的柔性, 在柔性透明导电薄膜中有着良好的应用前景. 如何制备同时拥有良好导电性能和透光性能的碳纳米管薄膜是这一领域研究的核心问题. 本综述介绍了碳纳米管薄膜的制备方法, 并重点讨论了基于漂浮催化剂化学气相沉积法的碳纳米管薄膜的可控制备. 在生长过程中限制碳纳米管的团聚、 增加碳纳米管的长度、 降低杂质的含量是提高碳纳米管薄膜性能的主要策略.     

石墨烯透明导电薄膜

石墨烯是一种新型二维晶体材料,它独特的单原子层结构显示出许多优异的物理化学性质。以石墨烯为原料制备的透明导电薄膜继承了石墨烯的优点,与氧化铟锡(ITO)薄膜相比,具有更好的力学强度、透光性以及化学稳定性,已逐渐成为全世界范围内的研究热点。本文首先介绍了石墨烯的光电性能,然后分别从石墨烯透明导电薄膜的前驱体和制备方法两个不同的角度,归纳总结了最近几年石墨烯透明导电薄膜的研究进展,就目前所面临的问题进行了讨论,并展望了石墨烯透明导电薄膜的未来发展。     

溶胶凝胶法制备铜铁矿结构p型透明导电氧化物薄膜

铜铁矿结构p型透明导电氧化物(transparent conducting oxide, TCO)薄膜是一类在电子学领域具有广泛应用前景的新材料,因其可与n-TCO薄膜形成真正意义上的“透明器件”而备受关注。本文介绍了铜铁矿结构p-TCO的结构特性以及溶胶凝胶法的基本原理和特点;系统地介绍了溶胶凝胶法制备铜铁矿结构p-TCO薄膜的工艺;分析比较了有机醇盐、无机盐溶胶体系的优缺点;最后讨论了进一步的发展方向,指出溶胶凝胶法是一种高效可行的制备p-TCO薄膜的方法。     

基于喷墨打印石墨烯透明导电薄膜研究进展

随着柔性电子产品的应用日渐广泛,采用喷墨打印技术制备大面积柔性电子产品的技术引起了人们的关注。石墨烯由于具有优异的光学和机械性能,成为制备透明导电薄膜的理想材料。石墨烯可以通过物理或化学方法制备得到。而喷墨打印技术因具有成本低廉、操作简单等优点成为制备大面积柔性电子产品的方法之一。本文首先对石墨烯的性质和制备方法进行了简述,然后分别阐述了喷墨打印墨水条件和喷墨打印图案化控制,最后总结了透明导电薄膜的应用进展以及发展趋势。     

Sb掺杂ZnSnO3透明导电薄膜：制备与性能

采用溶胶-凝胶法（Sol-Gel）和旋涂法制备了未掺杂的ZnSnO₃薄膜和掺入不同物质的量的Sb的ZnSnO₃薄膜。采用X射线衍射（XRD）、场发射扫描电镜（FE-SEM）、X射线光电子能谱（XPS）、霍尔效应仪（Hall）以及紫外-可见光（UV-Vis）等表征了热处理后薄膜的晶相、微观形貌、晶格缺陷、电学性能以及紫外-可见光透过率。结果表明：所有薄膜都是ZnSnO₃结构;与未掺Sb的ZnSnO₃薄膜相比,掺入Sb后的ZnSnO₃薄膜的电阻率都有不同程度的降低,其中掺入8mol%Sb的薄膜具有最低的电阻率0.96Ω·cm;缺陷研究表明：Sb的掺入使得晶格中的间隙锌离子含量增加,这有利于薄膜电阻率的降低;薄膜的紫外-可见光（UV-Vis）表明：在波长大于475nm的可见光范围内,掺入Sb的ZnSnO₃薄膜的可见光透过率都在80%以上。     

Sb掺杂ZnSnO_3透明导电薄膜:制备与性能(英文)

采用溶胶-凝胶法(Sol-Gel)和旋涂法制备了未掺杂的ZnSnO3薄膜和掺入不同物质的量的Sb的ZnSnO3薄膜。采用X射线衍射(XRD)、场发射扫描电镜(FE-SEM)、X射线光电子能谱(XPS)、霍尔效应仪(Hall)以及紫外-可见光(UV-Vis)等表征了热处理后薄膜的晶相、微观形貌、晶格缺陷、电学性能以及紫外-可见光透过率。结果表明:所有薄膜都是ZnSnO3结构;与未掺Sb的ZnSnO3薄膜相比,掺入Sb后的ZnSnO3薄膜的电阻率都有不同程度的降低,其中掺入8mol%Sb的薄膜具有最低的电阻率0.96Ω·cm;缺陷研究表明:Sb的掺入使得晶格中的间隙锌离子含量增加,这有利于薄膜电阻率的降低;薄膜的紫外-可见光(UV-Vis)表明:在波长大于475 nm的可见光范围内,掺入Sb的ZnSnO3薄膜的可见光透过率都在80%以上。     

Comparative Study on Preparation Methods for Transparent Conductive Films Based on Silver Nanowires

Silver nanowires, which have high optoelectronic properties, have the potential to supersede indium tin oxide in the field of electrocatalysis, stretchable electronic, and solar cells. Herein, four mainstream experimental methods, including Mayer–rod coating, spin coating, spray coating, and vacuum filtration methods, are employed to fabricate transparent conductive films based on the same silver nanowires to clarify the significance of preparation methods on the performance of the films. The surface morphology, conductive property, uniformity, and flexible stability of these four Ag NW-based films, are analyzed and compared to explore the advantages of these methods. The transparent conductive films produced by the vacuum filtration method have the most outstanding performance in terms of surface roughness and uniformity, benefitting from the stronger welding of NW-NW junctions after the press procedure. However, limited by the size of the membrane and the vacuum degree of the equipment, the small-size Ag films used in precious devices are appropriate to obtain through this method. Similarly, the spin coating method is suited to prepare Ag NWs films with small sizes, which shows excellent stability after the bending test. In comparison, much larger-size films could be obtained through Mayer-rod coating and spray coating methods. The pull-down speed and force among the Mayer-rod coating process, as well as the spray distance and traveling speed among the spray coating process, are essential to the uniformity of Ag NW films. After being treated with NaBH₄ and polymethyl methacrylate (PMMA), the obtained Ag NW/PMMA films show great potential in the field of film defogging due to the Joule heating effect. Taken together, based on the advantages of each preparation method, the Ag NW-based films with desired size and performances are easier to prepare, meeting the requirements of different application fields.     

溶剂热法制备铝掺杂的氧化锌透明导电薄膜

采用溶剂热法在玻璃基片上沉积铝掺杂的氧化锌透明导电膜(AZO)。研究了前驱溶液中Al3+与Zn2+的物质的量的比nAl3+/nZn2+、溶剂热反应温度和反应时间对薄膜物相、形貌、可见光透过率和电阻率的影响。结果表明,溶剂热法所制备的AZO薄膜具有六方纤锌矿结构,Al3+不仅改善薄膜的导电性而且起矿化剂的作用促进薄膜生长,溶剂热反应时间的增加没有使薄膜显著增厚。采用溶剂热法可制备出可见光平均透过率大于80%、方块电阻小于500Ω的AZO薄膜。     

透明PANI/ATO杂化导电薄膜的制备与表征

以聚苯胺和掺锑的氧化锡作为主要原料、采用溶胶-凝胶法制备了新型有机-无机杂化的透明导电薄膜，薄膜的可见光透过率为80%以上、电导率达到1~10 S·cm^-1。着重研究了制备过程中热处理温度、引入水量以及浸涂液浓度对薄膜的结构、可见光透过率和电导率的影响。确定了薄膜的最佳工艺条件为： 热处理温度为300 ℃、引入水量为R_w = 12、浸涂液的浓度为114 g·L^-1。浸涂液的粘度可在长达25 d的时间内保持稳定。     

Electrical Properties of Transparent Doped Oxide Films

In the present study n-type and p-type transparent conductive TiO₂ films were prepared by using sol-gel method. The n-type TiO₂ films were obtained by using Ti(OC₃H ₇ ⁱ )₄ solutions co-doped with Ru and Ta. The films were uniform and transparent in all the conditions, and their crystalline phases were anatase when HCl or HNO₃ was used as a catalyst. The resistivity decreased with increasing Ta content and increased with increasing Ru content. Most of the films showed resistivity minima at a heat-treatment temperature of 700°C. The lowest resistivity of 10¹ 10² cm was attained. The p-type TiO₂ films were obtained by using Ti(OC₃H ₇ ⁱ )₄ solutions co-doped with Co and Nb (Sb). The films were also uniform and transparent when AcAc was used, while samples heat-treated at 800°C became opaque when HCl was added. Rutile single phase appeared when the films were heat-treated at 700°C. Logarithmic resistivity of films co-doped with Co and Nb was directly proportional to the reciprocal absolute temperature. On the other hand, the slopes for films co-doped with Co and Sb were different below and above 200°–220°C. The activation energy at the low-temperature region is as low as 0.17 eV, and the resistivity at room temperature is 10⁴ 10⁵ cm.     

Enhanced Performance of Transfer-Free Graphene Transparent Conductive Films on Insulating Substrates by Introducing Array Nanostructure

Graphene is one of the most prevailing materials to replace traditional transparent conductive films (TCFs). In order to improve the performance of graphene TCFs, it is proposed to directly deposit graphene on insulating substrates via assisted catalysis of Cu foil to avoid intricate transfer process, and further effectively enhance the optical performance by introducing the close-packed antireflection array nanostructure. The graphene TCFs grown on bare quartz substrates have sheet resistance of 0.766 kΩ sq⁻¹ and transmittance of 86.83 %. Graphene composite TCFs with transmittance of 95.79 % were obtained by introducing the close-packed solid/hollow SiO₂ nanospheres antireflection array nanostructure. Compared with graphene TCFs, transmittance of graphene composite TCFs increased significantly, while the sheet resistance remained at the same level. This method combining direct synthesis technique with novel antireflection array nanostructure provides a significant design idea to grow transfer-free graphene with controllable optoelectronic properties and promotes the application and development of the future electronic devices.     

软化学法低温合成银纳米线及其生长机制

以AgNO_3为起始物，采用DMF为溶剂和还原剂，无须采用晶种，在低温下 AgNO_3经DMF还原，通过软化学法合成了结构均匀的银纳米线，其直径为15-30nm， 长度高达20μm。通过引入乙酰丙酮，控制钛酸丁酯水解形成的多孔氧化物溶胶为 网络孔道结构，这种孔道结构为银纳米线的控制合成提供了有效的生长模板。