Low-threshold interband cascade lasers operating above room temperature

Mid-IR type-II interband cascade lasers were demonstrated in pulsed mode at temperatures up to 325 K and in continuous mode up to 200 K. At 80 K, the threshold current density was 8.9 A/cm² and a continuous wave output power of 140 mW/facet was obtained.     

Design of type-II interband cascade lasers for terahertz emission

We report the design of type-II interband cascade (IC) lasers emitting at terahertz (THz) range. The band structures are obtained using an eight-band k · p finite difference method with strain effects, which accounts for the coupling between the conduction and valence bands. Also, a detailed analysis of the interband transition energy in the type-II IC laser structures as a function of layer thickness is carried out using the self-consistent Schrödinger–Poisson calculations. The calculations show that the promising type-II IC lasers operating at 2.3 THz can be reached.     

Recent progress in the development of type II interband cascade lasers

Type-II interband cascade lasers combine the advantage of an interband optical transition with interband tunneling to enable the cascading of type-II quantum well active regions as is done in type-I quantum cascade laser. The relatively high radiative efficiency resulting from interband optical transitions translates into very low-threshold current densities, and when combined with the high quantum efficiency of cascade lasers, this diode laser design has the potential to operate under cw conditions at room temperature with high output power. Experimental results have already demonstrated some of this potential including high differential external quantum efficiency (>600%), high peak output power (6 W/facet at 80 K), high cw power conversion efficiency (>17% at 80 K), and operation at 300 K under pulsed conditions. Recent work aimed at reducing device thermal resistance and increasing cw operating temperature is reviewed including the demonstration of significant reductions in thermal resistance (averaging 25 K/W or 40% for 1-mm-long devices), 80 K cw operation at 3.4 μm with high-power conversion efficiency (23%) and high differential external quantum efficiency (532%), and cw operation up to 214 K.     

Nanoscopically resolved dynamic charge‐carrier distribution in operating interband cascade lasers

Dynamic charge carriers play a vital role in active photonic quantum/nanodevices, such as electrically pumped semiconductor lasers. Here we present a systematic experimental study of gain‐providing charge‐carrier distribution in a lasing interband cascade laser. The unique charge‐carrier distribution profile in the quantum‐well active region is quantitatively measured at nanometer scales by using a noninvasive scanning voltage microscopy technique. Experimental results clearly confirm the accumulation and spatial segregation of holes and electrons in the beating heart of the device. The measurement also shows that the charge‐carrier density is essentially clamped in the presence of stimulated emission at low temperatures. The threshold charge‐carrier density exhibits a linear but fairly weak temperature dependence, in contrast to the exponential temperature dependence of the threshold current. The experimental approach will lead to a deeper understanding of fundamental processes that govern the operation and performance of nanoelectronic devices, quantum devices and optoelectronic devices.

     

Surface-field induced interband tunneling in InAs

Metal/insulator/semiconductor junctions are prepared on degeneratep-type InAs substrates with hole concentrations ranging from 2.3×10¹⁷ cm^–3 to 2.7×10¹⁸ cm^–3. The low work function of the top metal Yb, Al, or Au and charged interface states influence a two-dimensional (2D) electron inversion layer at the InAs surface. The insulator barrier that is formed by thermal oxidation is designed sufficiently thin, so that the bias voltage applied at the metal electrode mainly drops across the depletion layer separating the electron channel from the bulk. The current-voltage (I–V) characteristics exhibit strong negative differential conductance due to interband, tunneling from the 2D subband into the 3D valence band with peak-to-valley current ratios up to 3.1, 18, and 32 at 300 K, 77 K, and 4.2 K, respectively. In agreement with a theoretical model based on coherentelastic tunneling, the form of the I–V curves resembles those of double-barrier resonant tunnel devices rather than those of 3D Esaki diodes. The series resistance is obtained from the saturation of the differential conductance dI/dV at high forward bias and from the shift of structures in d² I/dV ² arising from phonon assisted tunneling.Dedicated to G. Lautz on the occasion of his 65th birthday     

带间作用与超导转变温度

用格林函数方法研究dp模型,表明带间电子电子作用Udp导致超导并提升超导转变温度,而在位电子电子作用Ud降低超导转变温度.由于带间作用,正常态和超导态都可以有非费米液体行为 关键词： 超导转变温度 带间作用 在位作用 格林函数     

Temperature dependence of interband transition energy in InGaAsN strain-compensated quantum-well and ridge-waveguide lasers fabricated with pulsed anodic oxidation

Ridge-waveguide InGaAsN triple-quantum-well strain-compensated lasers grown by metal organic chemical vapor deposition were fabricated with pulsed anodic oxidation. The laser’s output power reached 145 mW in continuous-wave mode at room temperature for a 4-?m -stripe-width laser. Continuous-wave single longitudinal mode operation was maintained at a high injection current level with a wavelength of 1287.3 nm at room temperature. Single longitudinal mode operation at 1317.2 nm was achieved at twice the threshold current at 100 °C. The band gap of InGaAsN in the quantum wells at different temperatures was calculated and compared to the measured temperature-dependent laser wavelength.     

Thresholds of quasi-supercontinuum interband quantum dot lasers

We present the analysis of threshold conditions that produces wideband- stimulated emission in semiconductor quantum-dot laser. Our theoretical model reveals critical occurrence of broadband lasing when the energy spacing between quantized energy states (ΔE) is comparable to the inhomogeneous broadening of quantum dot nanostructures.     

Nonlinear optics with quantum cascade lasers

We discuss new approaches to monolithic integration of quantum cascade lasers with resonant intersubband nonlinearities. We show that the proposed approaches can greatly enhance the performance of quantum cascade lasers and give rise to new functionalities. Examples considered include extreme frequency up-or down-conversion and wide-range electric tuning.     

Absorption spectroscopy with quantum cascade lasers

Novel pulsed and cw quantum cascade distributed feedback (QC-DFB) lasers operating near lambda=8 micrometers were used for detection and quantification of trace gases in ambient air by means of sensitive absorption spectroscopy. N2O, 12CH4, 13CH4, and different isotopic species of H2O were detected. Also, a highly selective detection of ethanol vapor in air with a sensitivity of 125 parts per billion by volume (ppb) was demonstrated.     

Long wavelength vertical transition quantum cascade lasers operating CW at 110 K

The continuous wave (cw) operation of a quantum cascade laser at wavelengths ∼8 μm is reported. The structures, grown by molecular beam epitaxy in the AlInAs/GaInAs material system, are based on a vertical intersubband transition scheme and use a plasmon-enhanced waveguide geometry to reduce the losses and increase the confinement factor. The single mode optical power from one facet is 2 mW at a maximum operating temperature of 110 K. In pulsed operation the highest temperature is 210 K and the threshold shows a weak temperature dependence typical of this class of lasers, with aT_o=110 K.     

Squeezed cascade lasers without and with inversion

A cascade system can produce lasers with and without inversion simultaneously. Lasing without inversion is maintained by two-photon coherence. Here we examine the quantum statistical properties of cascade lasers from a four level atomic system with two incoherent steps. It is shown that cascade lasers with and without inversion may simultaneously exhibit sub-Poissonian statistics. The intensity fluctuation spectrum in each laser field is reduced up to 25% below the shot noise limit. The succession of the two incoherent steps is responsible for noise reduction. At the same time, we investigate the fluctuation spectrum in the output intensity difference. For a broad range of parameters, up to 50% squeezing is achieved. The physical mechanism is attributed to the ac-Stark effect. In particular, when the present four-level system is reduced to the three-level system, up to 50% squeezing is retained.     

Photoacoustic spectroscopy with quantum cascade distributed-feedback lasers

We present photoacoustic (PA) spectroscopy measurements of carbon dioxide, methanol, and ammonia. The light source for the excitation was a single-mode quantum cascade distributed-feedback laser, which was operated in pulsed mode at moderate duty cycle and slightly below room temperature. Temperature tuning resulted in a typical wavelength range of 3cm(-1)at a linewidth of 0.2cm(-1). The setup was based on a Herriott multipass arrangement around the PA cell; the cell was equipped with a radial 16-microphone array to increase sensitivity. Despite the relatively small average laser power, the ammonia detection limit was 300 parts in 10(9)by volume.     

太赫兹量子级联激光器研究进展

太赫兹技术涉及电磁学、光电子学、半导体物理学、材料科学以及微加工技术等多个学科,它在信息科学、生物学、医学、天文学、环境科学等领域有重要的应用价值.太赫兹辐射源是太赫兹频段应用的关键器件.本文简要介绍了太赫兹电磁波的研究背景、重要特点以及潜在应用,重点讨论了太赫兹半导体量子级联激光器的工作原理和研究进展等.     

太赫兹量子级联激光器研究进展

太赫兹技术涉及电磁学、光电子学、半导体物理学、材料科学以及微加工技术等多个学科，它在信息科学、生物学、医学、天文学、环境科学等领域有重要的应用价值．太赫兹辐射源是太赫兹频段应用的关键器件．本文简要介绍了太赫兹电磁波的研究背景、重要特点以及潜在应用，重点讨论了太赫兹半导体量子级联激光器的工作原理和研究进展等．     

Population inversion in narrow-gap heterostructures due to the interband tunneling

The process of interband tunneling in a heterostructure with a wide-gap barrier between two layers of narrow-gap doped semiconductors is investigated. The tunneling probability, intraband and interband current components, and non-equilibrium carrier concentration are calculated using the transfer matrix method and a Dirac-like model for lead chalcogenide-type heterostructures. It is shown that the generation of electron-hole pairs due to interband tunneling may produce a population inversion and laser generation in the near-barrier region.     

Formaldehyde sensor using interband cascade laser based quartz-enhanced photoacoustic spectroscopy

A novel continuous-wave mid-infrared distributed feedback interband cascade laser was utilized to detect and quantify formaldehyde (H₂CO) using quartz-enhanced photoacoustic spectroscopy. The laser was operated at liquid-nitrogen temperatures and provided single-mode output powers of up to 12 mW at 3.53 m (2832.5 cm^-1). The noise equivalent (1) detection sensitivity of the sensor was measured to be 2.2×10^-8 cm^-1W(Hz)^-1/2 for H₂CO in ambient air, which corresponds to a detection limit of 0.6 parts in 10⁶ by volume (ppmv) for a 10 s sensor time constant and 3.4 mW laser power delivered to the sensor module. PACS 42.62.Fi; 72.50.+b