H在Ni表面的扩散性质及表面缺陷的影响-嵌入原子法(EAM)计算研究

本文用原子集团模型和嵌入原子方法,计算研究了H在Ni(100),(110)和(111)表面上的扩散特性,其扩散激活能分别是0.152eV;0.343eV和0.142eV。Ni(100)面上的吸附Ni原子和Ni原子空位,分别是在其表面上扩散的H原子的一种陷阱和位垒;Ni(100)面上的台阶,将使通过此台阶的H原子的扩散势垒增高,激活能增大,且引起扩散的各向异性。     

注入Mo 在Zr57Nb5Cu15.4Ni12.6Al10非晶合金中的扩散

通过二次离子质谱仪（SIMS）研究了Mo在Zr₅₇Nb₅Cu_15.4Ni_12.6Al₁₀非晶合金中的扩散，并计算出其扩散激活能Q和前置系数D₀分别为1.95 eV和1.13×10^-5m²s^-1.根据Stokes-Einstern关系式研究了玻璃转变温度以下593—673 K之间Zr₅₇Nb 关键词： 扩散 离子注入 二次离子质谱（SIMS） 黏滞特性     

LISICON(锗酸锌锂)单晶的Li+离子电导

本文研究了Lisicon(锗酸锌锂)单晶的Li⁺离子电导率。发现各结晶学方向电导率之间的关系为σ_b≤σ_a≤σ_c≤σ_[110],但各向异性不强。晶体中Li含量对电导率有明显的影响,当Li/Zn比率由6.7变到9.2时,300℃a方向电导率由4.3×10^-2Ω^-1·cm^-1增加到1.25×10^-1Ω^-1·cm^-1,logσT对1/T的曲线显示出三个转变点,分别在～80℃,～140℃和～300℃。电导的激活能分别为0.50—0.58eV(25—80℃),0.92eV(～80—140℃),0.64eV(～140—300℃)和0.36eV(>300℃),极化实验表明单晶的电子电导可以忽略。 关键词：     

氮化铝薄膜的硅热扩散掺杂研究

采用热扩散方法,对AlN薄膜进行了Si掺杂。利用电子能量散射谱(EDS)以及高温变温电导对薄膜进行了分析。EDS测试结果表明:在1 250 ℃的温度下,氮化硅(SiN_x)作为Si的扩散源,可以实现对AlN薄膜的Si热扩散掺杂。高温电流-电压(I-V)测试表明:在460 ℃测试温度下,AlN薄膜在热扩散掺杂以后,其电导从1.9×10^-3 S·m^-1增加到2.1×10^-2 S·m^-1。高温变温电导测试表明:氮空位(V³⁺_N)和Si在AlN中的激活能为1.03 eV和0.45 eV。     

H2O在Pt(100)表面的预吸附态与高迁移性能

本文采用ASED-MO方法,计算了H₂O分子在Pt(100)面上不同吸附取向、不同吸附位置时的结合能,以及表面扩散激活能和扩散系数.计算结果表明,H₂0分子必须通过氢原子朝向衬底的预吸附态.才能进人氧原子朝向衬底的垂直顶位化学吸附状态.当H₂O分子处于上述预吸附态时,势能面极为平坦,扩散系数大,迁移性高. 关键词：     

Cu/CeO2(110)界面特性的第一性原理研究

Cu-CeO₂体系因其特殊的催化能力而在固体氧化物燃料电池和水煤气转化反应等多个催化领域有重要应用. 采用基于密度泛函理论的第一性原理方法, 在原子和电子层面上系统地研究了单个Cu原子及Cu小团簇在CeO₂(110)面上的吸附构型, 价键特性和电子结构, 结果表明: 1) 单个Cu原子的最稳定吸附位是两个表面O的桥位; 2) Cu团簇的稳定吸附构型为扭曲的四面体结构; 3) Cu原子及Cu团簇的吸附在CeO₂(110)面的gap区域引入了间隙态, 这些间隙态主要来自于Cu及其近邻的O和表层还原形成的Ce³⁺, 间隙态的出现表明Cu的吸附增强了CeO₂(110)表面的活性; 4) 吸附的单个Cu原子及Cu团簇分别被CeO₂(110)面表层的Ce⁴⁺离子氧化形成了Cu^δ+和Cu₄^δ+, 并伴随着Ce³⁺离子的形成, 这个反应可归结为Cu_x/Ce⁴⁺→Cu_x^δ+/Ce³⁺; 5) Cu团簇的吸附比Cu单原子的吸附引入了更多的Ce³⁺离子, 进而形成了更多的Cu^δ+-Ce³⁺催化活性中心. 结合已报道的Cu/CeO₂(111)界面特性, 更加全面地探明了Cu与CeO₂(111)和(110)两个较稳定低指数表面的协同作用特性, 较为系统地揭示了Cu增强CeO₂催化特性的原因及Cu与CeO₂协同作用的内在机理. 关键词： 2')" href="#">Cu/CeO₂ U')" href="#">DFT+U 吸附 电子结构     

高压下面心立方CeH9和CeH10动力学性质的第一性原理研究

高压下的稀土金属超氢化物因具有高温超导电性而受到广泛关注。由于实验只能部分地确定超氢化物中稀土金属原子的晶格结构,因此,第一性原理计算成为全面理解其结构与物性的重要方法。基于第一性原理计算,对氢含量不同但Ce晶格结构相同的面心立方CeH₉和CeH₁₀的弹性、晶格动力学、质子动力学性质进行了对比研究,发现低氢含量有利于面心立方超氢化铈的弹性和声子稳定向低压拓展。在100～140 GPa压强区间,室温下CeH₉和CeH₁₀不具有显著的质子扩散,但1 500 K时全面转变为超离子态,扩散系数分别为1.6×10^-4～1.2×10^-4 cm²/s和1.9×10^-4～1.5×10^-4 cm²/s;扩散系数与温度、氢含量正相关,但与压强负相关。所获得的压强、温度及氢含量对超氢化铈结构与动力学性质的影响规律可为其他超氢化物研究提供参考。     

吸附在活性炭、三氧化二铝和硅胶上分子的核弛豫研究

本文提出核与电子偶极相互作用和自旋扩散两种作用在被吸附到固体多电子表面上的分子弛豫起着重要作用,给出了自旋晶格弛豫时间(T_1e)和相关时间(τ_c)的关系:T_1e,-kτ_c/1+ω₀²τ_c²)^1/2,式中k对给定固体是常数。吸附在硅胶上甲苯的弛豫数据可用此式描述。得到了甲苯中甲基在不同温度下的τ_c。,它们在374K到240K间的相关时间在3.56×10^-9 s到5.76×10^-8 s范围。由此计算出其活化能为15.0kJ/mol。     

热迁移对Cu/Sn/Cu焊点液-固界面Cu6Sn5生长动力学的影响

电子封装技术中, 微互连焊点在一定温度梯度下将发生金属原子的热迁移现象, 显著影响界面金属间化合物的生长和基体金属的溶解行为. 采用Cu/Sn/Cu焊点在250℃和280℃下进行等温时效和热台回流, 对比研究了热迁移对液-固界面Cu₆Sn₅生长动力学的影响. 等温时效条件下, 界面Cu₆Sn₅生长服从抛物线规律, 由体扩散控制. 温度梯度作用下, 焊点冷、热端界面Cu₆Sn₅表现出非对称性生长, 冷端界面Cu₆Sn₅生长受到促进并服从直线规律, 由反应控制, 而热端界面Cu₆Sn₅生长受到抑制并服从抛物线规律, 由晶界扩散控制. 热端Cu 基体溶解到液态Sn中的Cu原子在温度梯度作用下不断向冷端热迁移, 为冷端界面Cu₆Sn₅的快速生长提供Cu 原子通量. 计算获得250℃和280℃下Cu原子在液态Sn中的摩尔传递热Q^*分别为14.11和14.44 kJ/mol, 热迁移驱动力F_L分别为1.62×10^-19和1.70×10^-19 N.     

H_2在Ni,Pd与Cu表面的解离吸附

用EAM方法(embeded-atommethod)研究H_2在Ni,Pd与Cu的(100),(110)与(111)面上的解离吸附.首先通过拟合单个H原子在Ni,Pd与Cu不同表面上的吸附能和吸附键长,得到H与这些金属表面相互作用的EAM势,然后计算H_2在这些表面上以不同方式进行解离吸附时的活化势垒E_a,吸附热q_(ad)与吸附键长R.并给出H_2在(110)面上解离吸附的势能曲线.计算结果表明H_2的解离吸附与衬底种类、衬底表面取向及解离方式有关.H_2在Ni表面上解离时活化势垒很低,而在Cu表面解 关键词：     

First-principles investigation on diffusion behaviours of H isotopes: From W(110) surface into bulk and in bulk W

The diffusion behaviours of hydrogen (H), deuterium (D), and tritium (T) from W(110) surface into bulk and in bulk W are investigated using a first-principles calculations combined with simplified models. The diffusion energy barrier is shown to be 1.87 eV from W(110) surface to the subsurface, along with a much reduced barrier of 0.06 eV for the reverse diffusion process. After H enters into the bulk, its diffusion energy barrier with quantum correction is 0.19 eV. In terms of the diffusion theory presented by Wert and Zener, the diffusion pre-exponential factor of H is calculated to be 1.57×10^-7 m²·s^-1, and it is quantitatively in agreement with experimental value of 4.1×10^-7 m²·s^-1. Subsequently, according to mass dependence (√1/m ) of H isotope effect, the diffusion pre-exponential factors of D and T are estimated to be 1.11×10^-7 m²·s^-1 and 0.91×10^-7 m²·s^-1, respectively.     

Boron diffusion in bcc-Fe studied by first-principles calculations

The diffusion mechanism of boron in bcc-Fe has been studied by first-principles calculations. The diffusion coefficients of the interstitial mechanism, the B–monovacancy complex mechanism, and the B–divacancy complex mechanism have been calculated. The calculated diffusion coefficient of the interstitial mechanism is D_0= 1.05 ×10~(-7)exp(-0.75 e V/k T) m~2· s~(-1), while the diffusion coefficients of the B–monovacancy and the B–divacancy complex mechanisms are D_1= 1.22 × 10~(-6)f1exp(-2.27 e V/k T) m~2· s~(-1)and D_2≈ 8.36 × 10~(-6)exp(-4.81 e V/k T) m~2· s~(-1), respectively. The results indicate that the dominant diffusion mechanism in bcc-Fe is the interstitial mechanism through an octahedral interstitial site instead of the complex mechanism. The calculated diffusion coefficient is in accordance with the reported experiment results measured in Fe–3%Si–B alloy(bcc structure). Since the non-equilibrium segregation of boron is based on the diffusion of the complexes as suggested by the theory, our calculation reasonably explains why the non-equilibrium segregation of boron is not observed in bcc-Fe in experiments.     

Energy barriers of single-adatoms diffusion on unreconstructed and reconstructed (110) surfaces

The present paper is aimed mainly to investigate theoretically the diffusion of Ag, Cu, Au and Pt adatoms on the (1 × 1) unreconstructed geometry for Ag, Cu and Pt (110), and reconstructed geometries ((1 × 2), (1 × 3) and (1 × 4)) for Pt and Au (110) surfaces. We consider the single adatom diffusion when additional atoms are deposited in adjacent row. For this study, we have used the molecular statics simulations combined with the embedded atom method. For several systems, we have calculated the activation barriers for hopping mechanism. For the diffusion on the unreconstructed surfaces, the trends for the activation barriers are the same for all considered systems except for Cu/Ag (110) system, where the activation barrier do not change. Further, our results indicate that additional atoms lead to a small decreasing of activation barriers for diffusion on reconstructed surfaces for some systems, while for other systems; the activation barrier remains practically unchanged.     

流延法制备高锂离子电导Li_(1.4)Al_(0.4)Ti_(1.6)(PO_4)_3固态电解质及其环氧树脂改性

以溶胶凝胶法合成的高纯Li_(1.4)Al_(0.4)Ti_(1.6)(PO_4)_3(LATP)纳米晶体粉末为原料,通过流延法成膜,在950℃下煅烧5 h合成LATP固态电解质片;对其进行环氧树脂改性后,能量色散X射线光谱元素图像表明环氧树脂完全浸入LATP内部,可以有效防止水渗透.研究发现流延法合成的LATP固态电解质在25℃?C时电导率高达8.70×10~(-4)S·cm~(-1)、活化能为0.36 eV、相对密度为89.5%.经过环氧树脂改性后电导率仍高达3.35×10-4S·cm-1、活化能为0.34 e V、相对密度为93.0%.高电导隔水的环氧树脂改性LATP固态电解质可作为锂金属保护薄膜用于新型高比容量电池.     

Low specific contact resistivity to graphene achieved by AuGe/Ni/Au and annealing process

Low metal-graphene contact resistance is important in making high-performance graphene devices.In this work,we demonstrate a lower specific contact resistivity of Au_(0.88)Ge_(0.12)/Ni/Au-graphene contact compared with Ti/Au and Ti/Pt/Au contacts.The rapid thermal annealing process was optimized to improve AuGe/Ni/Au contact resistance.Results reveal that both pre- and post-annealing processes are effective for reducing the contact resistance.The specific contact resistivity decreases from 2.5 × 10~(-4) to 7.8 × 10~(-5) Ω·cm~2 by pre-annealing at 300 ℃ for one hour,and continues to decrease to9.5 × 10~(-7) H·cm~2 after post-annealing at 490 ℃ for 60 seconds.These approaches provide reliable means of lowering contact resistance.     

Optoelectronic properties of SnO_2 thin films sprayed at different deposition times

This article presents the elaboration of tin oxide(SnO_2) thin films on glass substrates by using a home-made spray pyrolysis system. Effects of film thickness on the structural, optical, and electrical film properties are investigated. The films are characterized by several techniques such as x-ray diffraction(XRD), atomic force microscopy(AFM), ultravioletvisible(UV–Vis) transmission, and four-probe point measurements, and the results suggest that the prepared films are uniform and well adherent to the substrates. X-ray diffraction(XRD) patterns show that SnO_2 film is of polycrystal with cassiterite tetragonal crystal structure and a preferential orientation along the(110) plane. The calculated grain sizes are in a range from 32.93 nm to 56.88 nm. Optical transmittance spectra of the films show that their high transparency average transmittances are greater than 65% in the visible region. The optical gaps of SnO_2 thin films are found to be in a range of 3.64 e V–3.94 e V. Figures of merit for SnO_2 thin films reveal that their maximum value is about 1.15 × 10-4-1?atλ = 550 nm. Moreover, the measured electrical resistivity at room temperature is on the order of 10-2?·cm.     

Co chemisorption on PtCu surfaces III. CO on PtCu(111)

Selected thermal desorption and valence band photoemission data on the chemisorption of CO on PtCu(111) surfaces are presented. The main objective is to make a comparison with CO chemisorption on an annealed (1 × 3) reconstructed Pt_0.98Cu_0.02(110) surface. The (111) alloy surfaces are unreconstructed (1 × 1) surfaces, with average near-surface Cu concentrations ranging from ? 7.5% to ? 20% as indicated by the Cu 920 eV Auger signal. It is observed that the effect of alloying Pt(111) with Cu is to progressively lower the desorption peak temperature and hence the free energy of CO desorption from Pt sites. A second observation is that the energy distribution of the Cu 3d-derived states is little affected by CO adsorption on Cu sites at 155 K. Both these results offer a contrast to the results for CO/Pt_0.98Cu_0.02(110) reported earlier.     

Adsorption and desorption of hydrogen on bare and Xe-covered Cu(111)

Using polarization-modulated ellipsometry to monitor adsorbate coverage in-situ, we studied the activated adsorption of filament-heated molecular hydrogen on Cu(111) and subsequent isothermal desorption of hydrogen adatoms. The adsorption is characterized by a zeroth-order kinetic with a constant sticking probability of S₀=0.0062 up to θ=0.25, followed by a Langmuir kinetic until the saturation coverage θ_s=0.5 is reached. The desorption follows a second-order kinetic with an activation energy of 0.63 eV and a pre-exponential factor of 1×10⁹ /s. A pre-adsorbed monolayer of Xe atoms on Cu(111), with a desorption activation energy of 0.25 eV and a pre-exponential factor of 8×10¹⁴ /s, efficiently blocks the subsequent adsorption of hot molecular hydrogen, making physisorbedXe useful as templates for spatial patterning of hydrogen adatom density on Cu(111). PACS 68.43.Jk; 78.68.+m; 81.15.-z; 82.40.Np     

金红石TiO_2中本征缺陷扩散性质的第一性原理计算

基于密度泛函理论的爬坡弹性带方法,对金红石相二氧化钛晶体中钛间隙、钛空位、氧间隙、氧空位4种本征缺陷的扩散特征进行了研究.对比4种本征缺陷在晶格内部沿不同扩散路径的过渡态势垒后发现,缺陷扩散过程呈现出明显的各向异性.其中,钛间隙和氧间隙沿[001]方向具有最小的扩散势垒路径,激活能分别为0.505 eV和0.859 eV;氧空位和钛空位的势垒最小的扩散路径分别沿[110]方向和[111]方向,激活能分别为0.735 eV和2.375 eV.     

Binding states and decomposition of NO on single crystal planes of Pt

Nitric oxide desorption and reaction kinetics are compared on the (111), (110),and (100) planes of platinum using temperature programmed desorption mass spectrometry. NO exhibits large crystallographic anisotropies with the (100) plane having stronger bonding and much higher decomposition activity than the (110) or (111) planes. The desorption activation energies for the major tightly bound states are 36, 33.5, and 25 kcal mole^?1 on the (100), (110), and (111) planes respectively. Pre-exponential factors for these states on the (110) and (111) planes are 1 × 10^16±0.5s^?1. The major tightly bound state on the (100) plane dissociates to yield 50% N₂ and O₂, but all other states all planes desorb without significant decomposition. The fraction decomposed is less than 2% on the Pt(111) surface.