Correlation effects in tracer diffusion and ionic conductivity

In this paper a conceptual link between the tracer correlation factor and the physical or conductivity correlation factor is explored in detail. As an aid to the discussion Monte Carlo simulation is used to calculate diagonal and cross phenomenological transport coefficients. It is shown that the tracer correlation factor can be regarded as a conductivity correlation factor and that the question of the formal correlation factor status of the conductivity correlation factor is meaningless.     

光束相干合成中填充因子对远场光强分布的影响

理论推导了相干光束阵列远场光强分布的解析表达式.介绍了填充因子及五种相干合成效果评价参数的定义.分析了填充因子对远场光强分布的影响,发现填充因子通过影响空间调制因子来改变远场光强分布.求得了相干合成效果评价参数与填充因子的关系式,并绘制了关系曲线.计算结果表明,斯特列尔比与填充因子无关,恒为1;中央主瓣半径与填充因子成正比关系;中央主瓣能量密度受填充因子的影响较小;中央主瓣能量比与填充因子的平方成近似正比关系;桶中功率与填充因子的关系很复杂,但总体上随着填充因子的√减小而减小.分析显示,若要保证中央主瓣能量比和PIB值均大于最佳值的一半,则填充因子应大于2/2.     

光斑的形状因子及其在光纤定解问题中的应用

通过比较面光源与多极子点源两种辐射场,定义了光斑的形状因子,它决定于光斑上的源强分布.给出了形状因子的确定方法,求出了几种常见光斑的形状因子.把形状因子应用于光纤理论,补充了入射端面上的定解条件,完整地设定了定解问题.利用形状因子简单讨论了光纤端面的源强分布对光纤模式特性的影响 关键词： 光纤光学 多极子面光源 形状因子     

RL与C并联谐振电路品质因数精确值的计算

在谐振电路中,品质因数是一个重要的参数.一般教材对RLC串联谐振电路和RLC并联谐振电路的品质因数讨论较多,品质因数一般定义为电压或电流之间的比值.对实际应用中较为常见的电感线圈和电容并联谐振电路,即RL与C并联谐振电路的品质因数的讨论较少.本文根据谐振电路储能与耗能所定义的品质因数,计算了实际中常用的电感线圈和电容并...     

稳态损耗因子的衰减法识别研究

根据稳态损耗因子的定义, 推导了含多阶模态的频带稳态损耗因子公式, 得到结论: 稳态损耗因子不一定介于各阶模态损耗因子之间, 而是与各阶模态对振动响应的贡献程度有关. 提出了过程损耗因子的概念, 并给出了利用频带内各模态固有频率、损耗因子和振幅计算过程损耗因子的方法. 当时间趋于无穷时, 过程损耗因子趋于只由最小模态损耗因子贡献的稳态损耗因子. 传统衰减法测试稳态损耗因子在频带内仅有单个模态或模态密集的情况下精度较高, 但对于含有多阶模态且模态不密集的中频带, 采用传统衰减法准确获取稳态损耗因子存在困难. 根据过程损耗因子的特点, 提出了利用时域衰减曲线逐步分离频带内不同衰减特性分量及其响应幅度从而获取稳态损耗因子的方法. 仿真和实验均表明: 提出的利用时域衰减数据获取稳态损耗因子的方法具有很高精度, 可以弥补传统衰减法在中频段损耗因子实验确定中的不足.     

基于随机表面微面元理论的二向反射分布函数几何衰减因子修正

现有几何光学方法的二向反射分布函数BRDF (bidirectional reflection distribution function)模型在计算阴影遮蔽效应时普遍应用Blinn几何衰减效应假设, 其等倾角V形槽近似得出的分段折线形式的几何衰减因子导致BRDF曲线存在较大的误差. 基于倾斜角随机高斯分布的微面元理论提出了一种新的几何衰减模型, 得出了积分形式的几何衰减因子表达式, 数值模拟比较了Blinn几何衰减因子与修正后的积分型衰减因子以及对应的BRDF模型曲线. 结果表明: 提出的几何衰减因子在物理合理性以及模拟精度方面都有明显提升, 使BRDF模型曲线与已有BRDF 数据之间的标准误差由0.0636减小到0.0084.     

On the use of Purcell factors for plasmon antennas

The Purcell factor is the standard figure of merit for spontaneous emission enhancement in microcavities and has also been proposed to describe emission enhancements for plasmonic resonances. A comparison of quality factor, mode volume, and Purcell factor for single and coupled plasmon spheres to exact calculations of emission rates shows that a Purcell factor derived from quality factor and mode volume does not describe emission changes due to plasmon antennas.     

GaN基高压发光二极管理想因子与单元个数关系研究

理想因子能够反映电流、载流子泄漏以及缺陷导致的非辐射复合等现象. 针对目前报道的GaN基发光二极管的理想因子的问题, 通过对高压发光二极管I-V曲线的拟合计算出了理想因子n的数值, 分别讨论了12 V, 19 V, 51 V 和80 V GaN基高压发光二极管的理想因子与其结构中串联晶粒个数的关系, 分析了理想因子大小与光谱半高宽(FWHM)的变化关系. 另外, 还对电流拥挤效应对理想因子的影响进行了分析. 结果表明: 高压发光二极管理想因子n随串联晶粒个数的增加几乎为线性规律增加, 高压发光二极管理想因子n是由其串联单元理想因子之和构成的. 这对GaN基高压发光二极管理想因子的研究具有参考价值.     

不同手机屏幕对青少年生理节律和蓝光危害的影响

针对市场上三款常见的不同材质的手机屏幕（LED背光LCD、OLED、SUPER AMOLED）,在黑暗中、屏幕距离瞳孔15 cm处4种不同色温的条件下,研究不同手机对青少年生理节律和蓝光危害的影响。在充分考虑年龄、人眼受光面积、透射率的情况下,改进传统计算蓝光危害因子的公式,并计算节律因子和蓝光危害因子。结果表明,不管何种手机,节律因子和蓝光危害因子都随色温升高而增大,并且均呈现出良好的线性关系。在7 425~9 201 K色温下,节律因子由大到小依次为:OLED > SUPER AMOLED > LED背光LCD;而蓝光危害因子由大到小依次为:LED背光LCD > SUPER AMOLED > OLED,由此可以根据不同需求,选择相对更健康合适的手机。     

InGaAs/GaAs应变量子阱激光器线宽展宽因子的理论研究

详细地介绍了计算线宽展宽因子(α因子)的理论基础及推导过程, 建立了α因子的简便模型. 该模型分别考虑了带间跃迁、带隙收缩和自由载流子效应对α因子的影响, 利用不同载流子浓度下的增益曲线得到光子能量随载流子浓度的变化速率以及微分增益, 进而对α因子进行近似计算. 模拟计算了InGaAs/GaAs量子阱激光器的增益曲线及α 因子的大小, 计算结果与文献报道的实验值相符. 进一步讨论了InGaAs/GaAs量子阱阱宽及In组分对α 因子的影响. 结果表明, α 因子随In组分和阱宽的增加而增加.     

Correlation effects in tracer diffusion and ionic conductivity. II

In this paper it is shown that the physical or conductivity correlation factor can be simply and directly expressed in terms of the well-known tracer correlation factor and a new two particle correlation factor. A Monte Carlo calculation of these correlation factors was performed to illustrate the use of the expression. The physics of the two-particle correlation factor are discussed.     

Monte Carlo simulation of exposure factor

In this paper, we simulate the exposure factor by a simple model of a free-air ionization chamber with the Monte Carlo programme Geant4. Special emphasis is placed on the discussion of the exposure factor related to parameters of the chamber model. The reason for the variation in exposure factor with incident ray energy is also analysed in terms of reaction cross section for different types of reactions. The obtained results indicate that our simulation is accurate in the calculation of the exposure factor and can serve as a reference in designing air ionization chambers.     

二维带电自旋-1/2费米气体的磁性质

通过引入描述电荷-磁场和自旋-磁场相互作用竞争关系的自旋因子,研究了磁场和简谐势阱双重约束的二维带电自旋-1/2费米气体的磁性质.结果表明,当自旋因子很小时,系统显示出抗磁性,随着自旋因子的进一步增大,系统逐渐转变为顺磁性.自旋因子的临界值将磁化强度划分为抗磁性区和顺磁性区,临界值随磁场和温度的增大仅发生微小的改变.     

Dispersion-managed soliton interactions in optical fibers

We simulated dispersion-managed soliton propagation and interaction in optical fibers. The energy-enhancement factor, together with the time-bandwidth product and the stretching factor, were calculated as a function of the difference in absolute values of accumulated dispersion in the fiber spans. The interaction strength of the dispersion-managed solitons was found to depend on the stretching factor. When this factor is less than 1.5, the interaction is weaker than for ideal solitons. When it is more than 1.5, there is a strong interaction between the pulses, which constrains the energy enhancement for practical applications.     

Tail,zeros and space-like region behaviour of the electromagnetic pion form factor

Combining the real and imaginary parts of the pion form factor from the resonant region, given by a simple formula obtained by means of the dispersion relation method, with some special assumptions in the asymptotic region and sum rules, the time-like region form factor tail is predicted. Further, the existence of form factor zeros is investigated and on the basis of numerical results one can conclude that zeros of the pion form factor exist. By means of the unsubtracted dispersion relation, the predicted space-like region behaviour of the form factor is found to be in excellent agreement with the existing experimental data.     

Landau problem with a general time-dependent electric field

The time evolution is studied for the Landau level problem with a general time dependent electric field E(t) in a plane perpendicular to the magnetic field. A general and explicit factorization of the time evolution operator is obtained with each factor having a clear physical interpretation. The factorization consists of a geometric factor (path-ordered magnetic translation), a dynamical factor generated by the usual time-independent Landau Hamiltonian, and a nonadiabatic factor that determines the transition probabilities among the Landau levels. Since the path-ordered magnetic translation and the nonadiabatic factor are, up to completely determined numerical phase factors, just ordinary exponentials whose exponents are explicitly expressible in terms of the canonical variables, all of the factors in the factorization are explicitly constructed. New quantum interference effects are implied by this result. The factorization is unique from the point of view of the quantum adiabatic theorem and provides a seemingly first rigorous demonstration of how the quantum adiabatic theorem (incorporating the Berry phase phenomenon) is realized when infinitely degenerate energy levels are involved. Since the factorization separates the effect caused by the electric field into a geometric factor and a nonadiabatic factor, it makes possible to calculate the nonadiabatic transition probabilities near the adiabatic limit. A formula for matrix elements that determines the mixing of the Landau levels for a general, nonadiabatic evolution is also provided by the factorization.     

Optical gain signal-to-noise ratio transfer efficiency as an index for ranking of phosphor- photodetector combinations used in X-ray medical imaging

Phosphor materials are used in medical imaging combined with radiographic film or other photodetectors. A parameter for choosing a phosphor material is the number of light photons produced per absorbed X-ray energy E, i.e. phosphor gain. Traditionally, a parameter for choosing the best photodetector for a phosphor material is the spectral matching factor, which denotes the percentage of the optical photons detected by the photodetector. However, this factor does not account for the phosphor gain neither in terms of signal strength nor in terms of noise. In this paper a new factor is introduced which evaluates phosphor-photodetector combinations in terms of optical gain signal-to-noise ratio matching. The proposed factor was implemented to some phosphor-photodetector combinations. It was found that for the narrow band emitting phosphors studied the results of the new factor and the matching factor were numerically the same. However, when not narrow bandwidth emitting phosphors were considered the results were numerically different. Additionally, for the case of CsI:Na phosphor different results were obtained in combinations ranking. PACS 78.65; 42.80     

The escape factor in plasma spectroscopy—I. The escape factor defined and evaluated

In plasma spectroscopy, it is frequently convenient to treat the effect of self-absorption parametrically, as a reduction in the spontaneous transition probability by a parameter known in the literature relating to laboratory sources as the escape factor. The concept of the escape factor is here developed in a systematic way, within a framework into which the many contributions of individual authors to particular aspects of the subject have been fitted. A general definition of the escape factor is presented from which other definitions are shown to follow. The escape factor has been evaluated for Gaussian, Lorentzian and Holtsmarkian profiles, for upper and lower limits to the source function and for infinite plane-parallel slab and infinite cylinder geometries. A comparison is made with other calculations of the escape factor from the literature. Where appropriate, reference is made to the astrophysical literature, particularly to that concerning the net radiative bracket.     

The form factors in (HI,HI') direct reactions

Using a semiclassical theory, we analyze the inelastic transition form factor. We find that: (i) In the strong absorption limit, the Austern-Blair theory is a good approximation to the inelastic form factor — even in highly mismatched reactions, (ii) In weak to moderate absorption, the amplitude of the inelastic form factor oscillates due to overlapping potential resonances. Here the internal part of the form factor can be expressed in a simple form, which may easily be used to analyze heavy-ion inelastic scattering, (iii) In the presence of an isolated resonance, the inelastic form factor is enhanced greatly at the resonance due to multiple reflections inside the potential well.