Structure and magnetic properties of Zn<Subscript>0.9</Subscript>Co<Subscript>0.1</Subscript>O nanorods synthesized by a simple sol–gel method using metal acetylacetonate and poly(vinyl alcohol)

Room-temperature ferromagnetism was observed in Zn_0.9Co_0.1O nanorods with diameters and lengths of ∼100–200 nm and ∼200–1000 nm, respectively. Nanorods were synthesized by a simple sol–gel method using metal acetylacetonate powders of Zn and Co and poly(vinyl alcohol) gel. The XRD, FT-IR and SAED analyses indicated that the nanorods calcined at 873–1073 K have the pure ZnO wurtzite structure without any significant change in the structure affected by Co substitution. Optical absorption measurements showed absorption bands indicating the presence of Co²⁺ in substitution of Zn²⁺. The specific magnetization of the nanorods appeared to increase with a decrease in the lattice constant c of the wurtzite unit cell with the highest value being at 873 K calcination temperature. This magnetic behavior is similar to that of Zn_0.9Co_0.1O nanoparticles prepared by polymerizable precursor method. We suggest that this behavior might be related to hexagonal c-axis being favorable direction of magnetization in Co-doped ZnO and the 873 K (energy of 75 meV) being close to the exciton/donor binding energy of ZnO.     

Doped Graphene Quantum Dots Modified Zn0.9Cd0.1Se for Improved Photoelectric Properties

S-graphene quantum dots (GQDs), N-GQDs, P-GQDs, and Cl-GQDs are prepared by a solution chemistry method and further incorporated with Zn_xCd_1−xSe by one-step hydrothermal method. In the previous study, Zn_xCd_1−xSe reached the optimal photoelectric performances at the Zn/Cd ratio of 0.9:0.1, so the Zn_0.9Cd_0.1Se were combined with doped GQDs (D-GQDs) to form Zn_0.9Cd_0.1Se/doped-GQDs. The influence of GQDs doped with different elements on the photoelectric properties of Zn_0.9Cd_0.1Se composites is discussed. Compared with pristine Zn_0.9Cd_0.1Se, Zn_0.9Cd_0.1Se/Cl-GQDs, and Zn_0.9Cd_0.1Se/P-GQDs can improve the photocurrent response and current intensity, therein, Zn_0.9Cd_0.1Se/Cl-GQDs reaches the lowest interfacial charge transfer resistance and the highest photocurrent response of 5.48 × 10⁻⁶ A cm⁻². Mott–Schottky analysis shows that the fitting slope of Zn_0.9Cd_0.1Se/Cl-GQDs composites is significantly lower than that of Zn_0.9Cd_0.1Se/GQDs with other doped elements. The results indicate that Zn_0.9Cd_0.1Se/Cl-GQDs composites has the largest carrier density, which is beneficial to charge conduction.     

Cd0.9Zn0.1Te晶体的Cd气氛扩散热处理研究

将生长得到的Cd_0.9Zn_0.1Te晶体在Cd气氛下及不同的温度条件下进行了退火处理. 借助已建立的退火处理过程中Cd_1-xZn_xTe晶体材料电阻率及导电类型变化和扩散杂质的扩散系数之间关系的模型，结合实验数据，获得了1073K，973K和873K下Cd在Cd_0.9Zn_0.1Te晶体中的扩散系数，并估算了其激活能. 通过使用获得的扩散系数，研究了在不同温度及饱和Cd气氛下，退火时间对Cd_0.9Zn_0.1Te晶体电阻率分布及导电类型等的变化的影响.     

Photoluminescence measurements in the phase transition region of Zn<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>S films

Thin films of Zn_1−x Cd _x S (0.1 ≤ x ≤ 0.5) were prepared by using pulsed laser ablation technique on corning glass substrates. Phase transition from cubic to hexagonal in Zn_1−x Cd _x S films is determined by X-ray diffraction analysis. We observed a lowering in the phase transition temperature with increase in the cadmium concentration. Transmission electron microscopy suggests the crystalline nature of thin films with average particle size of 15 nm. The grown Zn_1−x Cd _x S samples show the high peak intensity ratio of the near band edge emission to the defect center luminescence even at room temperature, which indicates the small concentration of complex defects in the samples. Photoluminescence measurement show stoichiometric dependence of the energy band gap and is found to have quadratic dependence on x.     

Influence of Cu doping on the microstructure,optical properties and photoluminescence features of Cd0.9Zn0.1S nanoparticles

Cd_0.9−xZn_0.1Cu_xS (0≤x≤0.06) nanoparticles were successfully synthesized by a conventional chemical co-precipitation method at room temperature. Crystalline phases and optical absorption of the nanoparticles have been studied by X-ray diffraction (XRD) and UV–visible spectrophotometer. XRD confirms the phase singularity of the synthesized material, which also confirmed the formation of Cd–Zn–Cu–S alloy nanocrystals rather than separate nucleation or phase formation. Elemental composition was examined by the energy dispersive X-ray analysis and the microstructure was examined by scanning electron microscope. The blue shift of absorption edge below Cu=2% is responsible for dominance of Cu⁺ while at higher Cu concentration dominated Cu²⁺, d–d transition may exist. It is suggested that the addition of third metal ion (Cu²⁺/Cu⁺) is an effective way to improve the optical property and stability of the Cd_0.9Zn_0.1S solid solutions. When Cu is introduced, stretching of Cd–Zn–Cu–S bond is shifted lower wave number side from 678 cm⁻¹ (Cu=0%) to 671 cm⁻¹ (Cu=6%) due to the presence of Cu in Cd–Zn–S lattice and also the size effect. The variation in blue band emission peak from 456 nm (∼2.72 eV) to 482 nm (∼2.58 eV) by Cu-doping is corresponding to the inter-band radiation combination of photo-generated electrons and holes. Intensity of red band emission centered at 656 nm significantly increased up to Cu=4%; beyond 4% it is decreased due to the quenching of Cu concentration.     

Microwave-assisted synthesis of Zn<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Cd<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>S–MWCNT heterostructures and their photocatalytic properties

The multi-walled carbon nanotubes (MWCNTs) wrapped with hexagonal wurtzite Zn _x Cd_1−x S nanoparticles with a uniform and small diameter have been prepared to form Zn _x Cd_1−x S–MWCNT heterostructures by microwave-assisted route using Zn(Ac)₂, Cd(NO₃)₂, and thioacetamide as the reactants_. The heterostructures have been characterized by X-ray powder diffraction, scanning and transmission electron microscopy, high-resolution transmission electron microscopy, photoluminescence (PL) and PL excited lifetime. Despite the analogous size and configuration, the Zn _x Cd_1−x S–MWCNT (x = 0, 0.2, 0.5, 0.8, 1) with different Zn concentration exhibit composition-dependent absorption properties in the visible zone. The PL peak positions of Zn _x Cd_1−x S–MWCNT change gradually from ZnS–MWCNT to CdS–MWCNT. The Zn _x Cd_1−x S–MWCNT shows different photocatalytic activity towards the photodegradation of fuchsin acid under visible light illumination, photocatalytic activity of the Zn _x Cd_1−x S–MWCNT decreases gradually with the increase in the Zn concentration, the Zn_0.2Cd_0.8S–MWCNT possessed the best photocatalytic activity. After recycling thrice, the photocatalysts still have about 85% efficiency.     

Photoluminescence properties of Eu3+-doped Cd1−x Zn x S quantum dots

Eu³⁺-doped Cd_1−x Zn _x S (0 ≤ x ≤ 0.5) quantum dots (QDs) have been synthesized using wet chemical precipitation method. X-ray diffraction and transmission electron microscope have been used for the crystallographic and morphological characterization of synthesized nanomaterials. In order to understand the spectral characteristics of doped QDs, N₂-laser induced time resolved spectra have been recorded. Excited state lifetime values for dichromatic emission (red and violet) attributed to ⁵D₀ → ⁷F_J (J = 1, 2) transitions of Eu³⁺ and host lattice transitions have been calculated from the recorded luminescence decay curves. Decay time dependence on the dopant concentration (0.01–10 at. wt% of Cd²⁺) has been studied in detail.     

Optical properties of the ternary compound Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Hg<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Se:Co

We present the results of experimental studies of the optical properties of cobalt-doped Cd _x H_1−x Se (x = 0.18) single crystals with cobalt ion concentrations of NCo = 5·10¹⁸, 5·10¹⁹, and 1·10²⁰ cm⁻³ at T = 90 K and 300 K. The composition (x = 0.18) of the Cd _x Hg_1−x Se solid solution was selected so that the hypothetical resonance level is found on the bottom of the conduction band. We show that the cobalt ions in the mercury selenide can form a resonance donor level only for cobalt concentrations N_Co < 5·10¹⁸ cm⁻³. For N_Co ∼ 5·10¹⁸ cm⁻³, the cobalt ions substitute for mercury atoms, forming a solid solution and leading to an increase in the bandgap width and a change in the physical properties. The solubility of cobalt in the HgSe lattice can be greater than 5%–10%. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 1, pp. 73–77, January–February, 2007.     

The structure of compositionally constrained zinc-ferrite spinel nanoparticles

ZnFe₂O₄ bulk material shows a normal-spinel structure and a closely defined composition at Zn²⁺/Fe³⁺ ≅ 0.5. However, the composition of zinc ferrite, prepared as nanoparticles, can be varied in a broad range without losing the single-phase spinel structure. In this article, structural mechanisms enabling this non-stoichiometry were studied using the X-ray absorption fine structure (EXAFS) in combination with X-ray diffractometry (XRD), transmission electron microscopy (TEM), and magnetic measurements. Nanoparticles with a narrow size distribution were synthesized using co-precipitation in water-in-oil microemulsions. First, the structure of the stoichiometric zinc-ferrite nanoparticles was studied in dependence of their size and the annealing temperature. EXAFS analysis showed that the degree of inversion x (as defined in the compound formula (Zn_1 − x Fe _x )[Fe_2 − x Zn _x ]O₄, with round and square brackets representing the tetrahedral and octahedral sites, respectively) increased with decreasing nanoparticles size. The structure of the stoichiometric nanoparticles and the nanoparticles of comparable size displaying Zn/Fe ratio of 0.2 (Fe-rich) and 0.7 (Zn-rich) were then compared. Analysis showed that the non-stoichiometry is structurally compensated predominantly in the core of the nanoparticle by the adjusted distribution of Zn and Fe ions over the two sublattices of the spinel structure.     

Efficient Quantum Dot Light-Emitting Diodes Based on Well-Type Thick-Shell CdxZn1−xS/CdSe/CdyZn1−yS Quantum Dots

Device grade quantum dots (QDs) require QDs ensembles to retain their original superior optical properties as in solution. QDs with thick shells are proven effective in suppressing the inter-dot interaction and preserving the emission properties for QDs solids. However, lattice strain–induced defects may form as the shell grows thicker, resulting in a notable photoluminescence quenching. Herein, a well-type Cd_xZn_1−xS/CdSe/Cd_yZn_1−yS QDs is proposed, where ternary alloys CdZnS are adopted to match the lattice parameter of intermediate CdSe by separately adjusting the x and y parameters. The resultant thick-shell Cd_0.5Zn_0.5S/CdSe/Cd_0.73Zn_0.27S QDs reveal nonblinking properties with a high PL QY of 99% in solution and 87% in film. The optimized quantum dot light-emitting diodes (QLEDs) exhibit a luminance of 31547.5 cd m⁻² at the external quantum efficiency maximum of 21.2% under a bias of 4.0 V. The shell thickness shows great impact on the degradation of the devices. The T₅₀ lifetime of the QLEDs with 11.2 nm QDs reaches 251 493 h, which is much higher than that of 6.5 and 8.4 nm QDs counterparts. The performances of the well-type thick-shell QLEDs are comparable to state-of-the-art devices, suggesting that this type of QDs is a promising candidate for efficient optoelectronic devices.     

Anti-stokes luminescence of Zn<Subscript>0.6</Subscript>Cd<Subscript>0.4</Subscript>S solid solutions with adsorbed organic dye molecules and few-atom silver clusters

For microcrystals of Zn_0.6Cd_0.4S with adsorbed molecules of a number of organic dyes, we have observed sensitized anti-Stokes luminescence excited by radiation with wavelengths in the range 610–750 nm and flux density 10¹⁴–10¹⁵ photons/cm²·sec. The positions of the bands in the excitation spectra for such luminescence match those of the absorption spectra for the adsorbed dye molecules, which is evidence in favor of a cooperative mechanism for its appearance. We have shown that enhancement of the anti-Stokes luminescence is possible when silver atoms and few-atom clusters appear on the Zn_0.6Cd_0.4S surface in addition to the dye molecules. We hypothesize that its excitation in the latter case occurs as a result of two-photon optical transitions. These transitions occur sequentially, with transfer of an electron or the electronic excitation energy from the dye molecules to silver atoms and few-atom clusters adsorbed on the surface of Zn_0.6Cd_0.4S, creating deep localized states in the bandgap with photoionization energies 1.80–2.00 eV. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 5, pp. 617–621, September–October, 2007.     

Structural,optical, and photoelectrochemical properties of nanosphere-like CdXZn1-XS synthesized by electrochemical route

Here, we present the effect of different Zn contents on the structural, morphological, and optical properties of Cd_XZn_1-XS thin films deposited by electrodeposition method on stainless steel and indium-doped tin oxide (ITO) glass substrates. Electrosynthesized Cd_XZn_1-XS thin films are characterized by using X-ray diffraction (XRD), UV-Vis spectrophotometer, field emission scanning electron microscope (FE-SEM), and surface wettability analysis. XRD pattern reveals that the Cd_XZn_1-XS thin films are polycrystalline in nature with hexagonal crystal structure. FE-SEM micrograph displays that these Cd_XZn_1-XS thin films exhibit the different sizes of sphere-like nanostructures by varying the X value. The optical absorption study indicates that drastic variation in band gap energy of Cd_XZn_1-XS thin films. In advance photovoltaic measurements, Cd_XZn_1-XS thin films are to be studied by forming the photoelectrochemical (PEC) cell having Cd_XZn_1-XS/0.5 M (Na₂SO₃)/C configuration. The efficiency values of Cd_XZn_1-XS are found to be 0.2, 0.35, 0.32, 0.25, and 0.23 % respectively at X content.

     

Antiferromagnetic interactions in Er-doped SnO<Subscript>2</Subscript> DMS nanoparticles

Diluted magnetic semiconductor (DMS) nanoparticles of Sn_1−x Er _x O₂ (x = 0.0, 0.02, 0.04, and 0.1) were prepared by sol–gel method. The X-ray diffraction patterns showed SnO₂ rutile structure for all samples with no impurity peaks. The decrease in crystallite size with Er concentration was confirmed from TEM measurements (from 12 to 4 nm). The UV–Visible absorption spectra of Er-doped SnO₂ nanoparticles showed blue shift in band gap compared to undoped SnO₂. The electron spin resonance analysis of Er-doped SnO₂ nanoparticles indicate Er³⁺ in a rutile lattice and also decrease in intensity with Er concentration above x = 0.02. Temperature-dependent magnetization studies and the inverse susceptibility curves indicated increased antiferromagnetic interaction with Er concentration.     

Infrared lattice-reflection spectroscopy of Zn1−x CdxSe epitaxial layers grown on a GaAs substrate by molecular-beam epitaxy

Results are presented of the first measurements of infrared reflection spectra of Zn_1−x Cd_xSe films (x=0–0.55; 1) grown on a GaAs substrate by molecular-beam epitaxy. It is shown by a mathematical analysis of the experimental spectra that the investigated Zn_1−x Cd_xSe alloy system manifests a unimodal rearrangement of its vibrational spectrum as the composition is varied. Fiz. Tverd. Tela (St. Petersburg) 41, 982–985 (June 1999)     

ZnO microparticles,ZnO nanoparticles and Zn0.9Cu0.1O nanoparticles toward ethanol vapor sensing: A comparative study

ZnO and Zn_0.9Cu_0.1O nanoparticles were synthesized by the sonochemical method. Structural and morphological properties of the synthesized nanoparticles were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy-dispersive analysis of X-ray (EDAX). The results revealed the formation of ZnO and Zn_0.9Cu_0.1O nanoparticles in wurtzite phase with average crystallite diameter of 30–40 nm calculated from Debye–Scherrer equation. Moreover, the ethanol vapor sensing properties of ZnO and Zn_0.9Cu_0.1O nanoparticles were investigated at different operating temperatures and they were compared with commercial ZnO microparticles. Comparative results demonstrated that Zn_0.9Cu_0.1O nanoparticles exhibit highest and fastest response to 250 ppm of ethanol at 300 °C. Results on response/recovery time, sensing mechanism, conductance variation and thermodynamics/kinetics of ethanol sensing is also studied and discussed.     

Electronic and optical properties of CdS/CdZnS nanocrystals

Cd1-x ZnxS nanocrystals are prepared by a co-precipitation method with different atomic fractions of Zn.The texture,structural transformation and optical properties with increasing x value in Cd1-x ZnxS are studied with scanning electron microscopy,electron diffraction patterning,and absorption spectra respectively.Quantum confinement in a strained CdS/Cd1-xZnxS related nanodot with various Zn content values is investigated theoretically.Binding energies on exciton bound CdS/CdxZn1-xS quantum dot are computed,with consideration of the internal electric field induced by the spontaneous and piezoelectric polarizations,and thereby the interband emission energy is calculated as a function of the dot radius.The optical band gap from the UV absorption spectrum is compared with the interband emission energy computed theoretically.Our results show that the average diameter of composite nanoparticles ranges from 3 nm to 6 nm.The X-ray diffraction pattern shows that all the peaks shift towards the higher diffracting angles with an increase in Zn content.The lattice constant gradually decreases as the Zn content increases.The strong absorption edge shifts towards the lower wavelength region and hence the band gap of the films increases as the Zn content increases.The values of the absorption edge are found to shift towards the shorter wave length region and hence the direct band gap energy varies from 2.5 eV for the CdS film and 3.5 eV for the ZnS film.Our numerical results are in good agreement with the experimental results.     

Electrical and photovoltaic properties of Cd1? x Zn x S/ p -GaAs heterojunctions

Cd_1−x Zn _x S/p-GaAs heterojunctions for solar cell applications have been prepared by growing single crystal Cd_1−x Zn _x S epitaxial layers on (111)GaAs substrates through a vapour phase chemical transport method using the close-spaced geometry and H₂ as a transport agent. Electrical and photovoltaic properties of the heterojunctions have been investigated and discussed in connection with the main features of the growth technique. AM1 power conversion efficiencies up to 6.2% have been measured and possible improvements have been examined.     

Ternary alloys CdyZn1 ? yO and MgxZn1 ? xO as materials for optoelectronics

Thin films of Cd _y Zn_{1 − y} O and Mg _x Zn_{1 − x} O (y = 0−0.35, x = 0−0.45) ternary alloys have been grown by pulsed laser deposition onto sapphire substrates. The record solubility limits of Cd (y = 0.3) and Mg (x = 0.35) have been achieved in hexagonal zinc oxide. The mismatch of the lattice parameters a of Cd_0.2Zn_0.8O and Mg_0.35Zn_0.65O does not exceed 1%; in this case, the band gap discontinuity is 1.3 eV. The surface roughness of the films does not exceed 2.5 nm at x = 0−0.27 and y = 0−0.20.     

Electronic and optical properties of Cd1-xZnxS nanocrystals

We report a numerical simulation of the conduction and valence band edges of Cd_1-xZn_xS nanocrystallites using a one — dimensional potential model. Electron — hole pairs are assumed to be confined in nanospheres of finite barrier heights. Optical absorption measurements are used to fit the bandgap of the Cd_1-xZn_xS nanocrystal material. A theoretical analysis is also made to calculate the energy location of bound excitons and the oscillator strength of interband transitions as a function of zinc composition. The aim of the latter study is to investigate the optical behavior of Cd_1-xZn_xS nanocrystals. An attempt to explain all the results is presented.     

Photovoltaic X-ray detectors made of CdTe crystals with a p-n junction

X-ray detectors made of CdTe crystals with a p-n junction obtained by diffusion of In into p-CdTe are investigated. The basic characteristics of such a detector are studied for the first time. It is found that the device is highly sensitive to X rays at a low bias voltage (to −50 V) and the X-ray effective energy in the range 28–72 keV. It is shown that photovoltaic detectors based on CdTe with p-n junctions are superior to Cd_0.9Zn_0.1Te ones.