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1.
薛春荣  易葵  邵建达 《光子学报》2014,39(11):1961-1966
为了研制低损耗、高性能的157 nm薄膜,研究了常用的六种宽带隙氟化物薄膜材料.制备和研究了六种氟化物单层膜,并以不同高低折射率材料对,设计制备了157 nm高反膜和增透膜|讨论和比较了不同氟化物材料对所组成的高反膜和增透膜的反射率、透射率、光学损耗等特性.结果表明,采用NdF3/AlF3 材料对设计制备的157 nm高反膜的透过率为1.7%,反射率接近93%,散射损耗为2.46%,已经与吸收损耗相当|以AlF3/LaF3材料对设计制备的157 nm增透膜的剩余反射率低于0.17%.  相似文献   

2.
为了研制低损耗、高性能的157nm薄膜,研究了常用的六种宽带隙氟化物薄膜材料.制备和研究了六种氟化物单层膜,并以不同高低折射率材料对,设计制备了157nm高反膜和增透膜;讨论和比较了不同氟化物材料对所组成的高反膜和增透膜的反射率、透射率、光学损耗等特性.结果表明,采用NdF3/AlF3材料对设计制备的157nm高反膜的透过率为1.7%,反射率接近93%,散射损耗为2.46%,已经与吸收损耗相当;以AlF3/LaF3材料对设计制备的157nm增透膜的剩余反射率低于0.17%.  相似文献   

3.
低损耗193 nm增透膜   总被引:2,自引:0,他引:2       下载免费PDF全文
尚淑珍  邵建达  范正修 《物理学报》2008,57(3):1946-1950
计算了适用于193nm增透膜设计与制备的基底与薄膜材料的光学常数,并在此基础上对193nm增透膜进行了设计、制备与性能分析.发现基底材料的吸收损耗对增透膜元件的影响很大,超过一定值时,增透膜元件的设计透过率将达不到理想水平.对单面增透膜的设计与制备结果表明,当吸收损耗降低到一定程度,散射损耗成为不可忽略的因素.采用热舟蒸发方法实现了性能良好的193 nm减反射膜,剩余反射率在0.2%以下. 关键词: 193nm 增透膜 光学损耗 剩余反射率  相似文献   

4.
三硼酸锂晶体上1064 nm,532 nm,355 nm三倍频增透膜的设计   总被引:1,自引:0,他引:1  
采用矢量法设计了三硼酸锂晶体上1064 nm、532 nm和355 nm三倍频增透膜,结果表明1064 nm、532 nm和355 nm波长的剩余反射率分别为0.0017%、0.0002%和0.0013%。根据误差分析,薄膜制备时沉积速率精度控制在 5.5%时,1064 nm、532 nm和355 nm波长的剩余反射率分别增加至0.20%、0.84%和1.89%。当材料折射率的变化控制在 3%时,1064 nm处的剩余反射率增大为0.20%,532 nm和355 nm处分别达0.88%和0.24%。与薄膜物理厚度相比,膜层折射率对剩余反射率的影响大。对膜系敏感层的分析表明,在1064 nm和355 nm波长,从入射介质向基底过渡的第二层膜的厚度变化对剩余反射率的影响最大,其次是第一膜层。在532 nm波长,第一和第三膜层是该膜系的敏感层。同时发现,由于薄膜材料的色散,1064 nm5、32 nm和355 nm波长的剩余反射率分别增加至0.15%、0.31%和1.52%。  相似文献   

5.
利用总积分散射仪对不同条件下制备的金属银膜、Y2O3稳定ZrO2(YSZ)薄膜、TiO2薄膜和1064 nm与532 nm双波长增透膜的表面均方根(RMS)粗糙度和散射特性的变化规律进行了系统研究,并与样品的制备条件、生长过程、材料组成及光学特性等各方面相结合,对测量结果做出了合理解释,从而使总积分散射测量在其他领域的研究得以扩展和应用. 关键词: 光学薄膜 表面散射 总积分散射仪  相似文献   

6.
空间反射镜基底材料碳化硅表面改性研究   总被引:5,自引:1,他引:4  
直接抛光后的SiC反射镜表面光学散射仍较大,无法满足高质量空间光学系统的心用需求.为此必须对SiC反射镜进行表而改性,以获得高质量的光学表面.目前国际上较为流行的足制备Si或SiC改性层进行表面改性.分别采用离子辅助电子束蒸发方法制备Si和SiC改性层进行改性,相关测试结果表明:Si改性层结构为立方相,改性后基底表面粗糙度(rms)降到0.620 nm,散射系数减小到1.52%;SiC改性层结构为非晶相,改性后基底表面粗糙度(rms)降到0.743 nm,散射系数减小到2.79%.两种改性层均与基底结合牢固,温度稳定性较高.从可靠性方面考虑,目前在国内第一种方法更适于实际工程应用.该工艺改性后SiC基底表面散射损耗大大降低,表面质量得到明显改善.镀Ag后表面反射率接近于抛光良好的微晶玻璃的水平,已能够满足高质量空间光学系统的应用需要.  相似文献   

7.
尚淑珍  邵建达  沈健  易葵  范正修 《物理学报》2006,55(5):2639-2643
设计并镀制了193nm Al2O3/MgF2反射膜,对它们在空气中分别进行了250—400℃的高温退火,测量了样品的透射率光谱曲线和绝对反射率光谱曲线.发现样品在高反射区的总的光学损耗随退火温度的升高而下降,而后趋于饱和.采用总积分散射的方法对样品在不同退火温度下的散射损耗进行了分析,发现随着退火温度的升高散射损耗有所增加.因此,总的光学损耗的下降是由于吸收损耗而不是散射损耗起主导作用.对Al2O3材料的单层膜进行了同等条件的退火处理,由它们光学性能的变化推导出它们的折射率和消光系数的变化,从而解释了相应的多层膜光学性能变化的原因.反射膜的反射率在优化联系、镀膜工艺与退火工艺的基础上达98%以上. 关键词: 193nm 反射膜 退火 光学损耗 吸收  相似文献   

8.
采用矢量法设计了三硼酸锂(LiB3O5,LBO)晶体上1 064 nm、532 nm、355 nm和266 nm四倍频增透膜.结果表明,在1 064 nm、532 nm、355 nm和266 nm波长的剩余反射率分别为0.001 9%、0.003 1%、0.006 1%和0.004 7%.根据容差分析,薄膜制备时沉积速率准确度控制在+6.5%时,基频、二倍频、三倍频和四倍频波长的剩余反射率分别增加至0.24%、0.92%、2.38%和4.37%.当薄膜材料折射率的变化控制在+3%时,1 064 nm波长的剩余反射率增大为0.18%,532 nm、355 nm和266 nm波长分别达0.61%,0.59%,0.20%.与薄膜物理厚度相比,膜层折射率对剩余反射率的影响大.对膜系敏感层的分析表明,在1 064 nm和266 nm波长,从入射介质向基底过渡的第二层膜厚度变化对剩余反射率的影响最大,其次是第一膜层.在532 nm和355 nm波长,从入射介质向基底过渡的第一和第四膜层是该膜系的敏感层.误差分析也表明,薄膜材料的色散对特定波长的剩余反射率具有明显影响,即1 064 nm、532 nm、355 nm和266 nm波长的剩余反射率分别增加至0.30%、0.23%、0.58%和3.13%.  相似文献   

9.
LBO晶体上1064 nm,532 nm二倍频增透膜的制备和性能   总被引:1,自引:0,他引:1  
采用电子束蒸发方法在三硼酸锂(LBO)晶体上制备了1064 nm,532 nm二倍频增透膜.利用Lambda900分光光度计、MTSNanoIndenter纳米力学综合测试系统以及调Q脉冲激光装置对样品的光学性能、附着力和激光损伤阈值进行了分析测试.结果表明,通过多次实验,不断改进薄膜沉积工艺条件,在LBO晶体上获得了综合性能优异的二倍频增透膜.样品在1064 nm,532 nm波长的剩余反射率分别为0.07%和0.16%,薄膜粘附失效的临界附着力和激光损伤阈值分别为137.4 mN和15.14 J/cm2,薄膜激光损伤发生在Al2O3膜层.  相似文献   

10.
研究了沉积温度对热舟蒸发氟化镧薄膜结构和光学性能的影响,沉积温度从200℃上升到350℃,间隔为50℃.采用分光光度计测量了样品的透射率和反射率光谱曲线,并在此基础上进行了光学损耗、光学常数以及带隙和截止波长的计算.采用表面轮廓仪进行了表面形貌和表面粗糙度的标定,采用X射线衍射(XRD)方法测量了不同沉积温度下样品的微结构.发现在短波长波段,随着沉积温度的升高,光学损耗增加,晶粒尺寸增大,表面粗糙度略有增加.不过散射损耗在光学损耗中所占比例均很小,光学损耗的增加主要由吸收损耗引起.随着沉积温度的升高,折射 关键词: 光学薄膜 沉积温度 3')" href="#">LaF3 光学损耗  相似文献   

11.
In conventional infrared multilayer antireflection coatings (MLAR) materials of fluoride and chalcogenide types are used, which are disadvantaged due to their low mechanical strength and poor stability against humidity and environmental impacts. In this paper, we show that high performance ultra broadband and hard infrared multilayer antireflection coatings on ZnSe substrates in the wavelength range from 2 to 16 μm can be designed and fabricated. Diamond-like carbon (DLC) hard coating as a mechanical and environmental protection layer was proposed and deposited onto MLAR surfaces (MLAR + DLC) using a pulsed vacuum arc ion deposition technique. The thickness of the high optical quality DLC can be optimized in the design simulation to achieve a practically best antireflection and surface protection performance. We show that a germanium thin film (15 nm) between the MLAR and DLC surfaces can be used as a transition layer for optical and material match. The average transmission of the fabricated MLAR+DLC surfaces was 93.1% in the wavelength range between 2 and 16 μm. The peak transmission was about 97.6%, close to the simulated values. The durability and stability against mechanical impacts and environmental tests was improved significantly compared with the conventional infrared windows.  相似文献   

12.
Nanoporous ZnO/SiO2 bilayer coatings were prepared on the surface of glass substrates via sol-gel dip-coating process. The structural, morphological and optical properties of the coatings were characterized. The refractive indices of ZnO layer and SiO2 layer are 1.34 and 1.21 at 550 nm, respectively. The transmittance and reflectance spectra of the coatings were investigated and the broadband antireflection performance of the bilayer structure was determined over the solar spectrum. The solar transmittances in the range of 300-1200 nm and 1200-2500 nm are increased by 6.5% and 6.2%, respectively. The improvement of transmittance is attributed to the destructive interference of light reflected from interfaces between the different refractive-index layers with an optimized thickness. Such antireflection coatings of ZnO/SiO2 provide a promising route for solar energy applications.  相似文献   

13.
用低压反应离子镀(RLVIP)的方法在Ge基底上制备了Ge1-xCx单层非均匀增透薄膜。随着沉积速率在0.05~0.4nm/s之间的变化,其折射率在2.31~3.42之间可变。实验结果表明,镀制的Ge1-xCx单层非均匀增透保护薄膜均为无定形结构,并实现了从2000~8000nm的宽波段增透。当沉积速率为0.1nm/s时,单面平均透过率从68.6%提高到了80.9%,比单面未镀膜时提高了17.9%。通过对薄膜的稳定性和牢固度进行测试表明,制备的Ge1-xCx单层非均匀增透薄膜具有良好的性能。  相似文献   

14.
采用离子束溅射制备了Al F3、Gd F3单层膜及193 nm减反和高反膜系,分别使用分光光度计、原子力显微镜和应力仪研究了薄膜的光学特性、微观结构以及残余应力。在优选的沉积参数下制备出消光系数分别为1.1×10~(-4)和3.0×10~(-4)的低损耗AlF_3和GdF_3薄膜,对应的折射率分别为1.43和1.67,193 nm减反膜系的透过率为99.6%,剩余反射几乎为零,而高反膜系的反射率为99.2%,透过率为0.1%。应力测量结果表明,AlF_3薄膜表现为张应力而GdF_3薄膜具有压应力,与沉积条件相关的低生长应力是AlF_3和GdF_3薄膜残余应力较小的主要原因,采用这两种材料制备的减反及高反膜系应力均低于50 MPa。针对平面和曲率半径为240 mm的凸面元件,通过设计修正挡板,250 mm口径膜厚均匀性均优于97%。为亚纳米精度的平面元件镀制193 nm减反膜系,镀膜后RMS由0.177 nm变为0.219 nm。  相似文献   

15.
Refractive index inhomogeneity is one of the important characteristics of optical coating material, which is one of the key factors to produce loss to the ultra-low residual reflection coatings except using the refractive index inhomogeneity to obtain gradient-index coating. In the normal structure of antireflection coatings for center wavelength at 532 nm, the physical thicknesses of layer H and layer L are 22.18 nm and 118.86 nm, respectively. The residual reflectance caused by refractive index inhomogeneity(the degree of inhomogeneous is between -0.2 and 0.2) is about 200 ppm, and the minimum reflectivity wavelength is between 528.2 nm and 535.2 nm. A new numerical method adding the refractive index inhomogeneity to the spectra calculation was proposed to design the laser antireflection coatings, which can achieve the design of antireflection coatings with ppm residual reflection by adjusting physical thickness of the couple layers. When the degree of refractive index inhomogeneity of the layer H and layer L is-0.08 and 0.05 respectively, the residual reflectance increase from zero to 0.0769% at 532 nm. According to the above accuracy numerical method, if layer H physical thickness increases by 1.30 nm and layer L decrease by 4.50 nm, residual reflectance of thin film will achieve to 2.06 ppm. When the degree of refractive index inhomogeneity of the layer H and layer L is 0.08 and -0.05 respectively, the residual reflectance increase from zero to 0.0784% at 532 nm. The residual reflectance of designed thin film can be reduced to 0.8 ppm by decreasing the layer H of 1.55 nm while increasing the layer L of 4.94 nm.  相似文献   

16.
An investigation was made of the wavelength dependences of light transmission through rare-earth fluoride films and of the effect of using these materials to produce antireflection surface coatings on silicon photoelectric converters. It was established that films of lanthanum, samarium, and dysprosium fluorides are highly transparent in the wavelength range 400–1100 nm and enable the optical reflection coefficient of a silicon surface to be reduced to 3.3–4.0%. It was shown that antireflection layers of these rare-earth fluorides increased the wavelength-resolved value of the short-circuit photoelectric current and the efficiency of a silicon photoelectric converter by more than 43%.State University, Samara. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 7–10, April, 1994.  相似文献   

17.
 采用电子束蒸发的方式,制备了有氧化硅内保护层和没有氧化硅内保护层的1 064 nm高透过、532 nm高反射的HfO2/SiO2双色膜,测量了它们的光学性能以及在基频和倍频激光辐照下的抗损伤性能。结果表明:氧化硅内保护层提高了双色膜在基频光辐照下的损伤阈值,对双色膜在倍频光辐照下的损伤阈值无明显影响。通过观察薄膜的损伤形貌,分析破斑的深度信息结合驻波场分布,对两类双色膜在基频光和倍频光下的损伤机制做了初步探讨。分析表明:氧化硅内保护层提高了膜基界面的抗损伤性能,从而提高了双色膜在基频光下的损伤阈值。  相似文献   

18.
Abstract

Thermal evaporation is commonly used for the production of optical coatings. The low packing density of thermally evaporated films implies optical constants and mechanical properties which are inferior to those of the bulk materials. For the investigations of the plasma IAD process we used a newly developed advanced plasma source (APS) with special features. The properties of dielectric layers deposited with plasma-IAD will be presented in comparison to conventional thermally evaporated films. In particular, the results of scratch resistant layers in combination with antireflection coatings on organic substrates will be shown.  相似文献   

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