电子储存环中离子俘获不稳定性的强-强模型模拟

 电子储存环中,由于被束流势阱俘获的离子会引起束流不稳定性。研究这种不稳定性的产生机制和抑制方法对提高机器的性能有重要理论和现实意义。介绍了用强-强模型对合肥光源（HLS）电子储存环中离子俘获不稳定性产生机制进行的模拟研究。模拟结果可用于理解在合肥光源（HLS）储存环上观察到的离子俘获现象。     

储存环束流Robinson不稳定性的分析和测量

 探讨了储存环束流的Robinson不稳定性问题,提出用“等效失谐角大于零”取代“失谐角大于零”作为束流稳定的基本条件。在合肥光源电子储存环200 MeV注入状态下,对束流不稳定性与高频腔失谐之间的关系进行了实验测量。结果表明：当束流稳定条件不满足时,如果高频腔大失谐,束流将全部丢失;小失谐时束流容易部分丢失;当高频腔处于负失谐状态,束流流强将限制在较低水平。     

束内散射效应下HALF储存环物理参数的优化设计

合肥先进光源（HALF）是我国规划建设的软X射线与VUV衍射极限储存环光源（DLSR）。如何有效地实现衍射极限束流发射度,是DLSR物理设计中的核心问题之一。基于束流发射度演化方程,针对HALF预研项目的储存环物理设计方案,计算了束内散射（IBS）效应带来的发射度增长,研究了DLSR中关键参数选择对IBS造成的发射度增长的影响。研究表明,在中低能DLSR物理设计中需要综合考虑储存环的周长、同步辐射阻尼时间等关键参数,以更好地抑制束流发射度的增长。在此研究基础上,通过综合考虑用户需求与储存环物理要求,提出了HALF当前工程项目的储存环物理设计方案。进一步综合应用束团拉伸、全耦合等措施后,更高效地抑制了HALF储存环内IBS造成的束流发射度增长。     

用束流位置监测器测量上海光源束流寿命

通过理论分析研究了电磁耦合型束流位置探测器（BPM）用于束流寿命测量的可行性,并在上海光源储存环上进行了束流实验,对其性能进行了评估。实验结果表明,与目前常用的直流流强变压器（DCCT）系统相比,BPM给出的束流寿命具有更高的带宽和分辨力,有利于进行不同时间尺度的束流寿命评估,而且可以通过多个平均的方式来进一步提高测量精度。     

合肥储存环电子束流寿命分析

 电子束流寿命是个很重要的指标,直接影响合肥光源的正常运行,为此研究了影响束流寿命的因素,测量了高频腔压、耦合度以及束团长度对电子束流寿命的影响,研究显示合肥储存环的电子束流真空寿命和托歇克寿命相当;并且利用束损系统测量了因托歇克寿命的变化而造成束流损失的相对变化;通过增加耦合度增加束流的垂直发射度,有效地提高了束流的寿命,保证了合肥光源的正常运行。     

微带传输线束流信号展宽处理设计

对束流信号进行展宽处理是储存环逐束团位置测量RF前端设计的重要工作之一。针对上海光源储存环束流信号的特点，对束流信号展宽进行分析，采用低通滤波器和包络检波联合的方法对信号进行展宽。考虑到实现过程需要对信号进行ps量级的延时，使用微带传输线对该方法进行了具体设计。对微带传输线等效为集总参数LC元件进行推导以进行低通滤波器设计，给出了阻抗匹配方案以实现宽带功率分配器与合成器。仿真和实测结果表明，所设计的电路能够对束流信号进行有效展宽处理。     

BEPCⅡ束流相关本底的蒙特卡罗模拟研究(Ⅲ)——Touschek效应

介绍了Touschek效应本底研究的意义、Touschek效应的作用原理和建模方法. 使用自主开发及通用的模拟工具, 系统研究了BEPCⅡ工作条件下BESⅢ主要探测器的Touschek本底. 模拟和计算束流寿命的比较表明当前的模拟结果是有参考价值的, 建模方法是可行的. 探测器的模拟结果表明Touschek本底不会影响将来BESⅢ的正常稳定运行, 不会造成探测器的辐照损伤.     

储存环高频剔除系统

 介绍了用于电子储存环部分填充和非均匀填充的一种实验装置,它利用储存环中电子运动所具有的横向自由振荡和束团脉冲的时间结构这一特性,采用外加激励的方法使其产生共振,从而使得储存环中部分束团中的电子丢失,形成储存环的部分填充和非均匀填充。还扼要介绍了用高频剔除系统在储存环上实现不同填充方式时的束流积累结果。     

衍射极限储存环束流注入物理方案的设计及模拟

衍射极限储存环（DLSR）作为第四代同步辐射光源，正得到世界各国的大力发展和建设。如何在尽量减小对存储束流扰动情况下，高效率地将束流注入到储存环中，是衍射极限储存环设计与运行中的重要课题之一。传统的局部凸轨注入法有着很长的历史，应用广泛且技术成熟，但是传统凸轨注入法会对存储束流造成扰动，且衍射极限储存环的动力学孔径较小，这给传统凸轨注入法的应用带来了困难。为了解决这些问题，改进了一些传统的离轴注入法，提出并发展了一些在轴的注入方法。合肥先进光源（HALF）是规划建设中的衍射极限储存环光源，基于HALF储存环的物理设计方案，设计并应用了几种离轴或在轴的注入方案，通过粒子跟踪和模拟的方法验证了它们的可行性并研究了注入效率等物理问题，并对模拟结果进行了讨论和总结。     

合肥先进光源储存环初步物理设计

我国最近立项建设的合肥先进光源将是一台软X射线与真空紫外衍射极限储存环光源,其电子束能量为2.2 GeV,周长为480 m,束流自然发射度为86 pm·rad,共有20个长直线节和20个短直线节。介绍了目前合肥先进光源储存环物理设计的进展情况,包括磁聚焦结构设计与优化,束流注入和集体效应的模拟与计算。     

Beam lifetime measurement and analysis in Indus-2 electron storage ring

In this paper, the beam lifetime measurement and its theoretical analysis are presented using measured vacuum pressure and applied radio frequency (RF) cavity voltage in Indus-2 electron storage ring at 2 GeV beam energy. Experimental studies of the effect of RF cavity voltage and bunched beam filling pattern on beam lifetime are also presented. An equation of stable beam current decay is evolved and this equation closely follows the observed beam current decay pattern. It shows that the beam is stable and the beam current decay is due to the beam–residual gas interaction (vacuum lifetime) and electron–electron interaction within a bunch (Touschek lifetime). The estimated vacuum, Touschek and total beam lifetimes from analytical formulations are also compared with the measured beam lifetime.     

Theoretical analysis of BLM system for HLS Ⅱ

Hefei Light Source (HLS) is being upgraded to HLS Ⅱ. Its emittance will be much lower than before, therefore the Touschek scattering will increase significantly and become the dominant factor of beam loss. So it is necessary to build a new beam loss monitoring (BLM) system that, in contrast to the old one, is able to obtain the quantity and position information of lost electrons. This information is useful in the commissioning, troubleshooting, and beam lifetime studying for HLS Ⅱ. This paper analyzes the distribution features of different kinds of lost electrons, introduces the operation parameters of the new machine and discusses how to choose proper monitoring positions. Based on these comprehensive analyses, a new BLM system for HLS Ⅱ is proposed.     

北京τ─粲工厂储存环磁聚焦结构的设计研究

对北京τ－粲工厂（BTCF）储存环磁聚焦结构设计中所涉及的一些关键物理问题作了探讨和研究，提出了可行性的方案．该方案的高亮度模式动力学孔径较大；单色模式的托歇克寿命较长、亮度较高；并且能兼容纵向极化束对撞模式．     

Calculations of operating schemes for a passive harmonic cavity in HLS-Ⅱ

A passive higher harmonic cavity (HHC) will be used in the Hefei Light Source II Project (HLS-Ⅱ) to lengthen the bunch and consequently increase the beam lifetime dominated by Touschek scattering. The effects of constant voltage and constant detuning have been calculated and compared over the operating current from 0.4 to 0.2 A on the bunch lengthening for the passive normal conducting harmonic cavity system in HLS-Ⅱ. The results show that the bunch shape has less change and the lifetime improvement factors are not less than 2.7 over the beam currents for the constant voltage case. The constant voltage operating scheme may be applied to our machine.     

Design of a higher harmonic cavity for the SSRF storage ring

Higher harmonic cavity used in the third generation synchrotron light source increases the Touschek lifetime. The higher harmonic cavity of Shanghai Synchrotron Radiation Facility (SSRF) is a 1.5GHz passive superconducting cavity. Its higher order modes (HOM) are extracted by a ferrite HOM damper out of the cryostat. Multi-cell cavity is chosen concerning the voltage. The harmonic cavity dynamics, beam dynamics with passive harmonic cavity and the design of single cell cavity are included in this paper.     

Design of a higher harmonic cavity for the SSRF storage ring

Higher harmonic cavity used in the third generation synchrotron light source increases the Touschek lifetime.The higher harmonic cavity of Shanghai Synchrotron Radiation Facility(SSRF)is a 1.5 GHz passive superconducting cavity.Its higher order modes(HOM)are extracted by a ferrite HOM damper out of the cryostat.Multi-cell cavity is chosen concerning the voltage.The harmonic cavity dynamics,beam dynamics with passive harmonic cavity and the design of single cell cavity are included in this paper.     

Experiments on the physics of charged particle beams at the VEPP-4M electron-positron collider

The VEPP-4M accelerator facility with a universal KEDR detector is designed to conduct experiments with colliding electron-positron beams. High-energy physics, nuclear physics, and studies using synchrotron radiation are the main directions of research with this facility. In addition, experiments on poorly explored issues in the physics of beams in the electron-positron storage ring and methodological studies to prepare an experiment aimed at testing corollaries of the CPT theorem for an electron and a positron are regularly conducted at the VEPP-4 facility. A number of works performed in recent years are described: studies to increase the accuracy of comparing the electron and positron spin precession frequencies by the resonant depolarization method; measurements of the count rate of Touschek electrons as a function of the beam energy in a wide range; comparison of the methods for measuring the beam energy spread; a study of the electron beam dynamics when a nonlinear betatron resonance is crossed.     

Bunch length manipulation in a diffraction-limited storage ring

In an electron storage ring,the bunch length can be increased or decreased by using harmonic cavities.Taking the High Energy Photon Source as an example,we test the bunch length manipulation with harmonic cavities in a diffraction-limited storage ring(DLSR).The most important collective effects in a DLSR,intra-beam scattering and Touschek effects,are evaluated for different bunch-length patterns.Our study shows that it is feasible to produce long and short bunches simultaneously in a DLSR,without causing severe emittance growth and reduction in lifetime.     

HIRFL-CSRm冷却束流寿命

实验研究了HIRFL-CSRm中电子冷却装置对C6+,Ar15+两种束流寿命的影响。首先,通过对比实验的测量确定电子冷却可以有效提高束流寿命;其次,探究了电子冷却装置中的各项参数（主要是电子束密度分布、流强、能量、绝热展开因子）是如何影响束流寿命的,通过改变电子束参数,测量束流寿命的变化趋势和规律,并且结合电子冷却相关理论对实验结果给予解释,最终通过实验优化和确定最佳的冷却装置参数,使束流在HIRFL-CSRm上获得了较高的寿命,从而提高HIRFL-CSRm束流累积过程中的流强增益。     

HIRFL-CSR实验环中束流损失机制及寿命研究

分析了在储存环中回旋的离子束与残余气体分子、 内靶和冷却电子束相互作用时的损失机制及相应的束流寿命, 针对兰州重离子加速器冷却储存环实验环内靶模式, 计算了50—500 MeV/u 12C6+, 36Ar18+, 132Xe54+和 238U92+等束流在各种损失机制影响下所对应的束流寿命和总的束流寿命。 结果表明: 影响束流寿命的主要因素是与内靶分子（原子）之间的电荷交换及与冷却电子束之间的辐射复合; 对于重离子束 132Xe54+和 238U92+, 与冷却电子束之间的辐射复合是影响其储存寿命的主要因素。The loss mechanism and lifetime of ion beams in collisions with residual gas, internal target and electrons in e cooler in heavy ion cooler storage rings were studied. The partial beam lifetimes resulting from various loss mechanisms and the total beam lifetimes of 50—500 MeV/u12C6+, 36Ar18+, 132Xe54+ and 238U92+ stored in the experimental ring of the Cooler Storage Ring at the Heavy Ion Research Facility in Lanzhou (HIRFL CSR) were calculated. The calculations indicate that the charge exchange process between ion beams and the internal target, as well as the radiative recombination process with the electrons in e cooler restrict the beam lifetime considerably. For heavy ion beams such as 132Xe54+ and 238U92+, the radiative recombination is the dominant loss mechanism