应变弛豫InGaAs/GaAs超晶格的X射线双晶衍射及形貌研究

应用X射线双晶衍射及双晶形貌术,对应变弛豫的InGaAs/GaAs超晶格作了研究,通过对双晶衍射摇摆曲线的计算机模拟,得到了超晶格的结构,应变弛豫机制,弛豫比,超晶格层与衬底的取向差等重要参数。从双晶形貌,得到了超晶格与衬底界面处和超晶格中的位错分布。 关键词：     

A Comparison of GaN Epilayers with Multiple Buffer Layers and with a Single Buffer Layer Grown on Si（111） Studied by HRXRD and RBS/Channeling

Two hexagonal GaN epilayers （samples A and B） with multiple buffer layers and single buffer layer are grown on Si （111） by metal-organic vapour phase epitaxy （MOVPE）. From the results of Rutherford backscattering （RBS）/channeling and high resolution x-ray diffraction （HRXRD）, we obtain the lattice constant （a and c） of two GaN epilayers （aA = 0.3190 nm, cA = 0.5184 nm and aB = 0.3192 nm, CB = 0.5179 nm）, the crystal quality of two GaN epilayers （ ХminA=4.87%, ХminB =7.35% along 〈1-↑213〉 axis） and the tetragonal distortion eT of the two samples along depth （sample A is nearly fully relaxed, sample B is not relaxed enough）. Comparing the results with the two samples, it is indicated that sample A with multiple buffer layers have better crystal quality than sample B with a single buffer layer, and it is a good way to grow GaN epilayer on Si （111） substrates using multiple buffer layers to improve crystal quality and to reduce lattice mismatch.     

Atomic and electron structure of reconstructed (111) surface in ZnSe and CdSe crystals

The atomic and electron structure of four variants of polar (111)-(2 × 2) surfaces in ZnSe and CdSe terminated by a cation, namely, the ideal, relaxed, reconstructed, and relaxed after reconstruction surfaces, are calculated for the first time from the first principles. The surface is simulated by a film with a thickness of 12 atomic layers and a vacuum gap of ~16 Å in the layered superlattice approximation. Four fictitious hydrogen atoms with a charge of 0.5 electrons each are added for closing dangling Se bonds on the opposite side of the film. Ab initio calculations are performed using the QUANTUM ESPRESSO software based on the density functional theory. It is shown that relaxation results in splitting of atomic layers. We calculate and analyze the band structures and total and layer-wise densities of electron states for four variants of the surface.

     

Early-stage ordering in in-situ annealed Fe51Pt49 films

We evidenced an early-stage ordering (ESO) in Fe₅₁Pt₄₉ film before the appearance of superlattice diffraction (long-range-order, LRO) using 40-nm-thick films prepared by magnetron sputtering onto quartz substrate. The appearance of L1₀ phase for samples deposited at substrate temperatures (T_s) 400 °C and higher was verified by X-ray diffraction. Surface roughness of Fe₅₁Pt₄₉ films, obtained via X-ray specular reflectivity with computational fitting, increases from 3.8 to 11 Å as T_s is increased from 25 to 275 °C. As further increase of T_s to 375 °C, the roughness drops to 3.2 Å and then increases again to 38 Å with T_s up to 700 °C. Measurement on residual strain demonstrates that it is initially compressive at T_s<400 °C. Thereafter the strain transfers to a tensile one and increases in magnitude as increasing T_s up to 700 °C corresponding to LRO transformation. Local atomic rearrangement is observed for samples deposited at T_s>250 °C by using extended X-ray absorption fine structure. Coercivity of films increases from 10 to 460 Oe as T_s increase from 25 to 375 °C (ESO) and then from 460 to 10,700 Oe with T_s 375-700 °C (normal LRO). The worked out quantitative estimation of ESO engages with that of LRO before T_s 400 °C.     

The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si（111） substrates

AlN/GaN superlattice buffer is inserted between GaN epitaxial layer and Si substrate before epitaxial growth of GaN layer. High-quality and crack-free GaN epitaxial layers can be obtained by inserting AlN/GaN superlattice buffer layer. The influence of AlN/GaN superlattice buffer layer on the properties of GaN films are investigated in this paper. One of the important roles of the superlattice is to release tensile strain between Si substrate and epilayer. Raman spectra show a substantial decrease of in-plane tensile strain in GaN layers by using AlN/GaN superlattice buffer layer. Moreover, TEM cross-sectional images show that the densities of both screw and edge dislocations are significantly reduced. The GaN films grown on Si with the superlattice buffer also have better surface morphology and optical properties.     

Impact of surface step heights of 6H-SiC (0 0 0 1) vicinal substrates in heteroepitaxial growth of 2H-AlN

Impact of step height of silicon carbide (SiC) substrates on heteroepitaxial growth of aluminum nitride (AlN) was investigated. Step-and-terrace structures with various step heights, 6 monolayer (ML), 3ML and 1ML, were formed on 6H-SiC (0 0 0 1) vicinal substrates by high-temperature gas etching. 2H-AlN layers were grown on the substrate by plasma-assisted molecular-beam epitaxy (MBE) and then these layers were characterized by atomic-force microscopy (AFM) and X-ray diffraction (XRD). High-quality AlN can be grown on SiC substrates with 6ML- and 3ML-height step, while AlN grown on SiC substrates with 1ML-height step exhibited inferior crystalline quality. A model for high-quality AlN growth on SiC substrates with 3ML-height step is proposed.     

Surfactant-mediated molecular beam epitaxy of high-quality (111)B-GaAs

We present a novel approach to the molecular beam epitaxy of [111]-oriented GaAs. Surface-segregating In employed as an isoelectronic surfactant allows us to achieve mirror-like (111) GaAs surfaces within a wide range of growth conditions. Scanning electron and atomic force microscopy confirm the excellent morphology of the resulting samples. High-resolution X-ray diffraction shows the incorporation of In into the films to be negligible. Finally, we demonstrate a 10 Å-In_0.2Ga_0.8As/300 Å-GaAs superlattice based on surfactant-grown GaAs with a photoluminescence linewidth as narrow as 4.2 meV.     

Four-component superlattice empirical pseudopotential method for InAs/GaSb superlattices

For the design of InAs/GaSb superlattice (SL) heterojunction infrared photodetectors with very low dark current we have extended the standard two-component superlattice empirical pseudopotential method (SEPM) and implemented a four-component model including interface layers. For both models, the calculated bandgap values for a set of SL samples are compared to bandgaps determined by photoluminescence measurements. While the bandgap resulting from the two-component model agrees well with experimental data for SL structures with individual layer thicknesses of 7 monolayers and more, we show that for SLs with thinner GaSb layers the four-component SEPM model is accurate, when the As-content in the interface and barrier layers is included in the model.     

InGaN/GaN超晶格厚度对Si衬底GaN基蓝光发光二极管光电性能的影响

采用有机金属化学气相沉积技术在Si(111)衬底上生长蓝光多量子阱发光二极管(LED) 结构, 通过在量子阱下方分别插入两组不同厚度的InGaN/GaN超晶格, 比较了超晶格厚度对LED光电性能的影响. 结果显示: 随超晶格厚度增加, 样品的反向漏电流加剧; 300 K下电致发光仪测得随着电流增加, LED发光光谱峰值的蓝移量随超晶格厚度增加而减少, 但不同超晶格厚度的两个样品在300 K下的电致发光强度几乎无差异. 结合高分辨X射线衍射仪、扫描电子显微镜、透射电子显微镜对样品的位错密度和V形坑特征分析, 明确了两样品反向漏电流产生巨大差异的原因是由于超晶格厚度大的样品具有更大的V形坑和V形坑密度, 而V形坑可作为载流子的优先通道, 使超晶格更厚的样品反向漏电流加剧. 通过对样品非对称(105)面附近的X射线衍射倒易空间图分析, 算得超晶格厚度大的样品其InGaN量子阱在GaN上的弛豫度也大, 即超晶格厚度增加有利于减小InGaN量子阱所受的应力. 综合以上影响LED发光效率的消长因素, 导致两样品最终的发光强度相近.     

Long-wavelength optical phonons in the ZnTe/Zn<Subscript>0.8</Subscript>Cd<Subscript>0.2</Subscript>Te superlattice

The lattice IR reflection spectra of a ZnTe/Zn_0.8Cd_0.2Te superlattice measured at temperatures of 300 and 10 K are analyzed. The ZnTe/Zn_0.8Cd_0.2Te superlattice is grown by molecular-beam epitaxy on a GaAs substrate with a ZnTe buffer layer. It is found that the lattice IR reflection spectra of the studied structure exhibit only one reflection band. Dispersion analysis of the experimental spectrum has revealed the presence of one lattice TO mode close in frequency to the mode of pure ZnTe. This result is explained by a shift in the frequency of the lattice modes of the ZnTe and Zn_0.8Cd_0.2Te layers of the superlattice toward each other. In turn, this shift is caused by internal elastic stresses in the superlattice due to a mismatch between the lattice parameters of the materials of these layers.     

Synthesis of carbon planar structures with specified properties

A new method is proposed that allows an integrated technology to be used for the synthesis of carbon planar structures with predetermined properties. The method is based on the avalanche annealing of amorphous short-period superlattices. The synthesized samples are investigated by Raman spectroscopy and photoluminescence. The possibility of synthesizing carbon layers with diamond-like, graphite-like, graphene, or other structures is demonstrated experimentally using the example of a C/SiC superlattice.     

Influence of strain on the atomic and electronic structure of manganite films

A study of the long-range, local and electronic structure of Nd_0.5Sr_0.5MnO₃ films of varying thickness between 500 and 2000 Å has been performed. Local structure measurements at the Sr K-edge reveal a reduction of the Mn-O-Mn bond angles in films below 1000 Å. Spin-polarized measurements reveal splitting of the Mn 3d e_g state in the strained region of the films and are consistent with a two-layer model for thick films with a relaxed undistorted layer on top of a strained structurally distorted layer near the substrate.     

Determination of in-plane lattice parameters of InAs/AlAs strained-layer superlattices by X-ray precession camera

A determination of the lattice parametersa andb of InAs/AlAs short-period strained-layer superlattices grown by Atomic Layer Molecular Beam Epitaxy (ALMBE) on GaAs(001) substrates has been performed by means of an X-ray precession camera using copper radiation. Spots belonging to the superlattice are clearly differentiated from those of the substrate, which confirms that they are partly decoupled from each other. It was also possible to resolve the lattice spots of InAs or In_0.8Ga_0.2 As decoupling buffer layers grown between the substrate and the superlattice. This technique proves to be very useful to characterize, in a very short time and with a reasonable resolution, highly mismatched epitaxial systems in which lattice parameters parallel to the interface play a crucial role in the understanding of the growing behaviour.     

Effect of strain on geometric and electronic structures of graphene on Ru(0001) surface

The atomic and electronic structures of a graphene monolayer on a Ru(0001) surface under compressive strain are investigated by using first-principles calculations. Three models of graphene monolayers with different carbon periodicities due to the lattice mismatch are proposed in the presence and the absence of the Ru(0001) substrate separately. Considering the strain induced by the lattice mismatch, we optimize the atomic structures and investigate the electronic properties of the graphene. Our calculation results show that the graphene layers turn into periodic corrugations and there exist strong chemical bonds in the interface between the graphene N×N superlattice and the substrate. The strain does not induce significant changes in electronic structure. Furthermore, the results calculated in the local density approximation (LDA) are compared with those obtained in the generalized gradient approximation (GGA), showing that the LDA results are more reasonable than the GGA results when only two substrate layers are used in calculation.     

Structural and Magnetic Properties of Codoped ZnO based Diluted Magnetic Semiconductors

Zn1-xCoxO （x = 0.01, 0.02, 0.05, 0.10 and 0.20） diluted magnetic semiconductors are prepared by the sol-gel method. The structural and magnetic properties of the samples are studied using x-ray diffraction （XRD）, extended x-ray absorption fine structure （EXAFS） and superconducting quantum interference device （SQUID）. The XRD patterns does not show any signal of precipitates that are different from wurtzite type ZnO when Co content is lower than x = 0.10. An EXAFS technique for the Co K-edge has been employed to probe the local structures around Co atoms doped in ZnO powders by fluorescence mode. The simulation results for the first shell EXAFS signals indicate that Zn sites can be substituted by Co atoms when Co content is lower than x = 0.05. The SQUID results show that the samples （x 〈 0.05） exhibit clear hysteresis loops at 300K, and magnetization versus temperature from 5 K to 350K at H = 100 Oe for the sample x = 0.02 shows that the samples have ferromagnetism above room temperature. A double-exchange mechanism is proposed to explain the ferromagnetic properties of the samples.     

Study on B2 structure epitaxial Fe/Co superlattice

The B2 structure Fe₅₀Co₅₀ alloy is very attractive material as a large spin conductance asymmetry. In this study, we have tried to fabricate epitaxial Fe/Co superlattice with B2 structure. In order to investigate the relationship between the film structure and the substrate temperature, the films were prepared at different substrate temperature. The film structure of Fe/Co was evaluated by reflection high energy electron diffraction (RHEED). The in-plane lattice spacing gradually decreased to that of a bulk Fe₅₀Co₅₀ as increase in the number of layers. The B2 structure ordered phase of Fe/Co superlattice was successfully confirmed by RHEED and X-ray diffraction (XRD).     

Green function method for ferromagnetic superlattice

The expression of Green function for different layers in a ferromagnetic superlattice is derived by the recurrence relations technique. The elementary unit cell of the superlattice under consideration consists of alternating layers of two simple-cubic Heisenberg ferromagnets. The results are illustrated numerically for a particular choice of parameters.     

Local structures of Mn in dilute magnetic semiconductor ZnMnO

The local structures of Mn atoms in (Zn, Mn)O have been investigated by extended x-ray absorption fine structure (EXAFS). For samples with lower Mn concentrations (<11%), EXAFS results show that the majority of Mn atoms are incorporated at Zn substitutional sites. Ferromagnetic behavior has been observed in those ZnMnO samples. It is the direct evidence to suppose that the ferromagnetism in (Zn, Mn)O is not due to Mn-related secondary phases but is intrinsic. When the Mn concentration is increased to 20% or higher, the EXAFS simulation shows the formation of MnO secondary phases and the films show a change from ferromagnetic (FM) to antiferromagnetic (AFM) state. We suggest that Mn-related secondary phases might be responsible for the transformation from FM to AFM state.     

Disordered surface sheets in solid matter near bulk instabilities

In this article, I review surface-sensitive X-ray scattering experiments using evanescent X-ray scattering and asymptotic Bragg scattering techniques which have been carried out in order to investigate the thermodynamic behaviour of the surface and the subsurface layers when the bulk of the system approaches a phase transition. I discuss the surface structures of the binary alloys Fe₃Al and Cu₃Au close to the order-disorder transition, the surface of the molecular crystal NH₄Br near the critical temperature and ice single-crystal surfaces close the bulk melting point. The observed surface phenomena range from surface disorder and surface-induced new universal critical behaviour to surface melting and surface segregation. They all have in common that they are not bound to the outermost layers, but rather occur within a surface sheet whose thickness can grow to a mesoscopic or even macroscopic size.     

Particular nanowire superlattice as a spin filter

A nanowire superlattice of InAs and GaAs layers with In_0.47Ga_0.53As as the impure layers is proposed. The oft-neglected k³ Dresselhaus spin-orbit coupling causes the spin polarization of the electron but often can produce a limited spin polarization. In this nanowire superlattice, Dresselhaus term produce complete spin filtering by optimizing the distance between the In_0.47Ga_0.53As layers and the Indium (In) in the impure layers. The proposed structure is an optimized nanowire superlattice that can efficiently filter any component of electron spins according to its energy. In fact, this nanowire superlattice is an energy dependent spin filter structure.