LED用于彩色全息图照明的色度研究

基于制作全息灯箱背光源的需要,从色度上分析研究了发光二极管用于彩色全息图照明的可行性,对使用发光二极管和定向照明卤钨灯照明再现的彩色全息图进行了色度测量与评价.实验测量并计算了发光二极管与卤钨灯光谱功率分布RGB成分比,给出了在CIE1976均匀颜色空间中两种光源再现图像与原图像之间的色差.结果表明, 发光二极管用作彩色全息图照明光源是可行的,可以作为全息灯箱背光源.     

发光二极管材料与器件的历史、现状和展望

文章介绍了发光二极管材料和器件的研究、开发的历史，概述了发光二极管技术的发展现状和进展．通过与其他类型光源的比较，向读者展示了发光二极管未来的重要地位和光明前景．发光二极管的最近的成就是实现了有色光方面的成功应用．高功率白色发光二极管已开始应用于便携式和特殊照明．而在通用的照明领域要成功地应用发光二极管，则需要通过性能和价格方面的继续突破来实现．     

辐射与发光 发光与发光器件

TN312．8 2005064014 绿色光源-LED=Green light sources-LED[刊,中]/武 毅(清华大学建筑设计研究院．北京(100084))∥灯与照 明．-2005,30(2)．-45-48,53 介绍了发光二极管(LED)的结构、发光原理,阐述了 作为绿色照明光源的发光二极管的特点及应用前最。图2 表3参2(杨妹清)     

未来重要光源——发光二极管

在电灯发明之后的100多年里,照明技术的不断发展使白炽灯和荧光灯面临着严重的威胁.特别是发光二极管技术的逐步成熟,引发了照明光源的一场技术革命.不仅仅是红绿灯,在大型屏幕显示、室内照明、汽车车灯、广告标志等所有需要光亮的地方,发光二极管都将取代传统的照明设备,成为未来的重要光源.     

用于投影机的发光二极管照明单元

目前的投影机光源——高压汞灯存在寿命短、色温高、存在有害光线、发热集中等缺点,严重制约了投影机进入家庭应用领域。发光二极管的最近发展为其作为高压汞灯的替代光源提供了可能性。提出了一种由一个发光二极管、一个准直镜、一个前蝇眼透镜和一个后蝇眼透镜组成的用于投影机的发光二极管照明单元,由数个照明单元加上会聚透镜则构成一个基本的照明系统。发光二极管的发光经准直镜压缩光束发散角后被前蝇眼透镜分割为多个细光束,会聚透镜将每个细光束都叠加会聚到显示芯片上,实现光能量的会聚和光场再分布．以满足投影机对光通量和光场均匀性等方面的要求,后蝇眼透镜用于与后续光路的匹配。作为照明单元的一个应用实例,文中分析了一种单片式硅上液晶投影机。     

基于同步多曲面法的发光二极管机器视觉照明设计

提出一种无需特殊封装结构光源,采用封装类型为表面贴装型,或板上芯片封装型的普通照明用发光二极管光源的照明子系统.为了使新照明系统在切换具有不同光色普通照明用发光二极管光源时使用同一个匀光系统(可保证被照面照度均匀度),根据非成像理论中的边缘光线原理,使用同步多曲面法设计了通用型匀光光学系统。该系统可以在保持光学系统固定的前提下进行多种照明光源的替换,无需经过匀光设计的特殊结构光源,保证了目标面照度均匀度,并扩展了照明子系统的光色范围.多组蒙特卡罗光线追击仿真对比表明,新系统所使用光源只要满足透镜设计针对光源尺寸的需求,满足尺寸要求的普通照明用光源即可集成入系统使用,不会因为被照面照度不均匀导致的辨别度下降,因而适用于对能量利用率要求不太高,但对目标面照度均与度有较高要求的机器视觉照明系统.     

发光在工业和国防上的应用

本文综述了固体发光在照明光源、终端显示、彩色显象、辐射场探测、ｘ射线增感屏、辐射成象和转换等领域中的应用，以及其他方面的应用前景．     

一种基于RGB三基色LED的白光光源

数字光源处理(DLP)投影技术是投影显示的一个重要分支,基于发光二极管(LED)照明技术的DLP投影显示技术则是目前DLP技术的一个重要发展方向。根据DLP投影显示技术的需要,对一种新型的LED混光光源进行了优化设计和仿真计算,得到了一种适合于为DLP微型投影机提供照明的LED混光光源。该混光光源可以提高LED光源的DLP微型投影机的光通量。     

用于液晶显示屏幕检测的大口径小角度LED光源设计

针对液晶显示屏幕检测中光源照明均匀性较差的问题,基于非成像光学理论提出了一种大口径小角度的发光二极管(LED)照明光源设计方法。光源采用阵列式照明方式,对单颗LED设计菲涅耳透镜实现小角度的准直照明;推导阵列均匀照度分布条件并利用Trace Pro软件进行优化,确定阵列最优间距;最终通过在照明面上的光斑拼接叠加实现均匀矩形照明。照明光源由12×9个配光单元形成均匀方形阵列排布,每两个配光单元间距30 mm。仿真结果表明,光源的发光角度小于±10°,在距光源170 mm的照明面上,平均照度大于45000 lx,非均匀性3.8%,均满足设计指标。该方法设计的阵列式光源无论平均照度还是照度均匀性均比现有光源有明显优势。     

新型绿色电光源——高频无极灯

 爱迪生发明的白炽灯，掀开了人类照明史的新篇章。随着科技的发展，从日光灯到普通节能灯，从高压汞灯到钠灯、金属卤化物灯等气体放电灯的相继问世，以及发光二极管（Light Emitting Diode，即LED）新光源的推出，照明领域取得了一个又一个的进步。……一种集合现代多种电光源的优点于一体的新光源--高频无极灯由此应运而生。     

GaN基LED倒装芯片蓝宝石衬底半球型图形优化设计

为了提高GaN基LED芯片的光提取效率,以GaN基LED芯片为研究对象,建立了在蓝宝石衬底出光面和外延生长面上具有半球型图形的LED倒装芯片模型,并利用光学仿真软件对图形参数进行优化设计。实验结果表明:在蓝宝石衬底的出光面和外延生长面双面都制作凹半球型图形对芯片光提取效率的提高效果最好,并且当半球的半径为3 m,周期间距为7 m时,GaN基LED倒装芯片的最大光提取效率为50.8%,比无图形化倒装芯片的光提取效率提高了115.3%。     

面向半导体照明的光学

以发光二极管(LED)为核心的半导体照明光源成为世界公认的第三代照明光源.通常基于蓝光LED抽运黄色荧光粉产生白光的方案,因荧光粉的斯托克斯位移和宽光谱,其具有产业化价值的发光效率上升范围受到极大限制.另外,传统封装LED因其朗伯型发光分布和超高亮度会造成严重的眩光以及光分布难以满足照明应用要求从而导致光污染、光浪费,...     

基于不同衬底材料高出光效率LED芯片研究进展

提高LED芯片的出光效率是解决LED光源大功率化和可靠性的根本。根据LED芯片所用衬底材料的不同,总结了近年来提高GaN基LED出光效率的研究进展,介绍了新的设计思路、工艺结构与制备方法。并从材料结构和衬底选取方面,对LED芯片未来的发展趋势进行了展望。     

Progress and prospects of GaN-based LEDs using nanostructures

Progress with GaN-based light emitting diodes(LEDs) that incorporate nanostructures is reviewed,especially the recent achievements in our research group.Nano-patterned sapphire substrates have been used to grow an Al N template layer for deep-ultraviolet(DUV) LEDs.One efficient surface nano-texturing technology,hemisphere-cones-hybrid nanostructures,was employed to enhance the extraction efficiency of In GaN flip-chip LEDs.Hexagonal nanopyramid GaN-based LEDs have been fabricated and show electrically driven color modification and phosphor-free white light emission because of the linearly increased quantum well width and indium incorporation from the shell to the core.Based on the nanostructures,we have also fabricated surface plasmon-enhanced nanoporous GaN-based green LEDs using AAO membrane as a mask.Benefitting from the strong lateral SP coupling as well as good electrical protection by a passivation layer,the EL intensity of an SP-enhanced nanoporous LED was significantly enhanced by 380%.Furthermore,nanostructures have been used for the growth of GaN LEDs on amorphous substrates,the fabrication of stretchable LEDs,and for increasing the3-d B modulation bandwidth for visible light communication.     

Enhancing light extraction of GaN-based blue light-emitting diodes by a tuned nanopillar array

Surface patterning of p-GaN to improve the light extraction efficiency of GaN-based blue light-emitting diodes(LEDs) has been investigated. Periodic nanopillar arrays on p-GaN have been fabricated by polystyrene(PS) nanosphere lithography; the diameter of the nanopillars can be tuned to optimize the electrical and optical properties of the LEDs. The electroluminescence intensity of the nanopillar-patterned LEDs is better than that of conventional LEDs; the greatest enhancement increased the intensity by a factor of 1.41 at a 20 mA injection current. The enhancements can be explained by a model of bilayer film on a GaN substrate. This method may serve as a practical approach to improve the efficiency of light extraction from LEDs.     

Enhancement of LED light extraction via diffraction of hexagonal lattice fabricated in ITO layer with holographic lithography and wet etching

A novel method for enhancing light extraction efficiency of LEDs via diffraction of the lattice fabricated in ITO layers of LEDs is proposed. The lattice fabrication process includes holographic lithography and wet etching. 3-beam interference holographic approach was used to fabricate large-area hexagonal lattice mask which can cover 2-inch semiconductor wafer, and acid etching was used to transfer the lattice structure into p-contact ITO layer. 1.4 fold enhancement of light output at 20 mA injection current was obtained from GaN-based LEDs in the primary experiment. The lattice fabrication process is rapid and cost-effective thus enabling industrial mass production of high brightness LEDs.     

Improvement of GaN light-emitting diodes with surface-treated Al-doped ZnO transparent Ohmic contacts by holographic photonic crystal

This letter presents a holographic photonic crystal (H-PhC) Al-doped ZnO (AZO) transparent Ohmic contact layer on p-GaN to increase the light output of GaN-based LEDs without destroying the p-GaN. The operating voltage of the PhC LEDs at 20 mA was almost the same as that of the typical planar AZO LEDs. While the resultant PhC LED devices exhibited significant improvements in light extraction, up to 1.22 times that of planar AZO LEDs without PhC integration. Temperature dependence of the integrated photoluminescence intensity indicates that this improvement can be attributed to the increased extraction efficiency due to the surface modification. These results demonstrate that the surface-treated AZO layer by H-PhCs is suitable for fabricating high-brightness GaN-based LEDs.     

Improved Light Extraction of GaN-based LEDs with Nano-roughened p-GaN Surfaces

p-GaN surfaces axe nano-roughened by plasma etching to improve the optical performance of GaN-based light emitting diodes （LEDs）. The nano-roughened GaN present a relaxation of stress. The light extraction of the LEDs with nano-roughened surfaces is greatly improved when compared with that of the conventional LEDs without nano-roughening. PL-mapping intensities of the nano-roughened LED epi-wafers for different roughening times present two to ten orders of enhancement. The light output powers are also higher for the nano-roughened LED devices, This improvement is attributed to that nano-roughened surfaces can provide photons multiple chances to escape from the LED surfaces,     

Enhancement of the light extraction of GaN-based green light emitting diodes via nanohybrid structures

Improvement in the light extraction efficiency (LEE) of GaN-based green light emitting diodes (LEDs) with ZnO nanostructures synthesized by a hydrothermal method is reported. Formation of ZnO nanorods, hemispheres, and cones was controlled by varying the pH of the aqueous synthesis solution. The shape of the ZnO nanostructures integrated onto the LEDs shows a strong relationship with the LEE characteristics of GaN-based green LEDs. The electroluminescence (EL) intensity of LEDs covered by ZnO nanostructures increased compared to conventional LEDs. In terms of LEE, LEDs with surface-textured ZnO hemispheres showed the highest EL intensity, which can be attributed to an increase in the effective critical angle, the escape cone, and multiple scattering. Finite difference time domain (FDTD) simulation was conducted to theoretically confirm the experimental results.