Multiple collisions in crystal high-order harmonic generation

We theoretically investigate high-order harmonic generation (HHG) in crystals induced by linearly polarized laser fields. We obtain the HHG spectra by solving the semiconductor Bloch equations and analyze the radiation process by different models. Here we propose a multiple collision model, in which the electrons and holes are produced at different times and places. It is found that the multiple collision trajectories can help us comprehensively and better explain the results of the quantum calculation. Moreover, we find that the harmonic suppression occurs due to the overlap of multiple collision trajectories.     

BBO晶体的五倍频

本文报道了用BBO晶体对Nd:YAG激光器输出的1064nm光的五倍频,获得了213nm的紫外输出,266nm转换至213nm的转换效率达48%.并用数值积分的方法从理论上分析了1064nm与266nm的混频过程,得出的结论与实验结果相符.     

四倍频磷酸二氘钾晶体

生长了不同氘含量的磷酸二氘钾(DKDP)晶体,切割角度统一沿Ⅰ类非临界相位匹配方向,即与晶体z轴成90与x轴成45,分别在1 064 nm和1 053 nm两种基频波长下进行了四倍频实验,通过测定氘含量与相位匹配角的联系,确定出能够实现非临界四倍频的DKDP晶体的最佳氘含量。实验发现在1 064 nm的基频波长下通过调节DKDP晶体的氘含量无法实现室温的非临界相位匹配,而在1 053 nm基频波长下实现室温的非临界相位匹配的DKDP晶体最佳氘含量为85%左右     

四倍频磷酸二氘钾晶体

生长了不同氘含量的磷酸二氘钾(DKDP)晶体,切割角度统一沿Ⅰ类非临界相位匹配方向,即与晶体z轴成90与x轴成45,分别在1 064 nm和1 053 nm两种基频波长下进行了四倍频实验,通过测定氘含量与相位匹配角的联系,确定出能够实现非临界四倍频的DKDP晶体的最佳氘含量。实验发现在1 064 nm的基频波长下通过调节DKDP晶体的氘含量无法实现室温的非临界相位匹配,而在1 053 nm基频波长下实现室温的非临界相位匹配的DKDP晶体最佳氘含量为85%左右     

High power red laser generation by second harmonic generation with GTR-KTP crystal

In this Letter, a gray-tracking-resistant—potassium titanyl phosphate(GTR-KTP) crystal is used for intracavity frequency doubling red laser generation for the first time. Under the 808 nm LD pump power of 180 W, as high as 12.5 W of red laser output is obtained with the optimum repetition rate of 7 k Hz. Within the red laser power variation range between the maximum to 70%, a temperature tolerance is measured to be 35°C. The results prove that GTR-KTP should be a potential nonlinear crystal for red laser generation.     

Linear and nonlinear absorption,SHG and photobleaching behaviors of Dy doped GaSe single crystal

The linear absorption, nonlinear absorption (NA), second harmonic generation (SHG) and carrier mobilities of undoped and 0.1 at% Dy doped GaSe single crystals grown by modified Bridgman method have been studied by UV–vis, open aperture Z-scan, SHG and transmission ultrafast pump probe spectroscopy experiments. Both linear absorption and SHG measurements clearly showed that the doping of GaSe crystal with Dy³⁺ leads to a shift in the linear absorption edge. The mechanisms contributing to the NA behavior were explained and discussed. The photobleaching behaviors of the crystals were investigated by delaying of the probe signal in transmission pump-probe spectroscopy experiments.     

Improved metal-insulator-metal point-contact diodes for harmonic generation and mixing

The parameters influencing the operation of a metal-insulator-metal pointcontact diode are discussed. Analyticl results show that the responsivity of the diode increases with increasing oxide film thickness. Oxide films of about 12 ? thickness can be obtained on nickel by anodic, oxidation.     

Second harmonic generation by femtosecond pulses in nematic liquid crystal

The second harmonic generation (SHG) by the femtosecond pulses in a nematic liquid crystal has been experimentally studied. It was found that the SHG by a light beam occurs in the bulk of the liquid crystal sample, is accompanied by a luminescence, and is only observed in the presence of the light-induced director reorientation.     

二维非线性光子晶体中的高阶准相位匹配谐频

在二维正方晶格的周期性极化铌酸锂晶体中，通过调节基频光波长实现了皮秒光束的高阶共线及非共线准相位匹配谐频过程，在垂直于入射光束的方向上观察到了多对红、绿、蓝三种颜色的谐频光斑.同时，通过改变晶体的入射角度也实现了基频光的高阶谐频过程.实验与理 论符合得很好，这一结果对光电子集成及紧凑器件的研究发展有重要的指导意义. 关键词： 高阶准相位匹配 二维非线性光子晶体 频率转换     

High harmonic generation in a gas-filled hollow-core photonic crystal fiber

High harmonic generation (HHG) of intense infrared laser radiation (Ferray et al., J. Phys. B: At. Mol. Opt. Phys. 21:L31, 1988; McPherson et al., J. Opt. Soc. Am. B 4:595, 1987) enables coherent vacuum-UV (VUV) to soft-X-ray sources. In the usual setup, energetic femtosecond laser pulses are strongly focused into a gas jet, restricting the interaction length to the Rayleigh range of the focus. The average photon flux is limited by the low conversion efficiency and the low average power of the complex laser amplifier systems (Keller, Nature 424:831, 2003; Südmeyer et al., Nat. Photonics 2:599, 2008; Röser et al., Opt. Lett. 30:2754, 2005; Eidam et al., IEEE J. Sel. Top. Quantum Electron. 15:187, 2009) which typically operate at kilohertz repetition rates. This represents a severe limitation for many experiments using the harmonic radiation in fields such as metrology or high-resolution imaging. Driving HHG with novel high-power diode-pumped multi-megahertz laser systems has the potential to significantly increase the average photon flux. However, the higher average power comes at the expense of lower pulse energies because the repetition rate is increased by more than a thousand times, and efficient HHG is not possible in the usual geometry. So far, two promising techniques for HHG at lower pulse energies were developed: external build-up cavities (Gohle et al., Nature 436:234, 2005; Jones et al., Phys. Rev. Lett. 94:193, 2005) and resonant field enhancement in nanostructured targets (Kim et al., Nature 453:757, 2008). Here we present a third technique, which has advantages in terms of ease of HHG light extraction, transverse beam quality, and the possibility to substantially increase conversion efficiency by phase-matching (Paul et al., Nature 421:51, 2003; Ren et al., Opt. Express 16:17052, 2008; Serebryannikov et al., Phys. Rev. E (Stat. Nonlinear Soft Matter Phys.) 70:66611, 2004; Serebryannikov et al., Opt. Lett. 33:977, 2008; Zhang et al., Nat. Phys. 3:270, 2007). The interaction between the laser pulses and the gas occurs in a Kagome-type Hollow-Core Photonic Crystal Fiber (HC-PCF) (Benabid et al., Science 298:399, 2002), which reduces the detection threshold for HHG to only 200 nJ. This novel type of fiber guides nearly all of the light in the hollow core (Couny et al., Science 318:1118, 2007), preventing damage even at intensities required for HHG. Our fiber guided 30-fs pulses with a pulse energy of more than 10 μJ, which is more than five times higher than for any other photonic crystal fiber (Hensley et al., Conference on Lasers and Electro-Optics (CLEO), IEEE Press, New York, 2008).     

Tellurium and sulfur doped GaSe for mid-IR applications

Centimeter-sized Te:GaSe (??10?mass%) ingots have been grown by the vertical Bridgman technique and studied to reveal the potentials for phase matching and frequency conversion. Less than 5 mass% Te-doped crystals show the hexagonal structure like ??-GaSe. Te:GaSe (??2?mass%) crystals were suitable for non-linear applications. The optimal Te-doping level between 0.1 and 0.5 mass% has been clearly observed in CO₂ laser SHG experiment. The CO₂ laser SHG efficiency in Te:GaSe (0.1?C0.5 mass%) is ??20?% higher than that of GaSe due to better optical quality. Phase matching conditions in Te-doped crystals have been shown to be identical with those of GaSe.     

Tunable terahertz generation from one CO2 laser in a GaSe crystal

Coherent terahertz pulses have been generated at a range of 236.3-1104.5 μm (0.27-1.3 THz) by one CO₂ laser with dual-wavelength output based on collinearly phase-matched different frequency generation (DFG) in a GaSe crystal. This source has the advantages of compact and simplicity for tuning. The output power of the THz pulse and phase-matching conditions were investigated. The maximum single pulse energy of 11 nJ was generated at a frequency of 1.23 THz (243.6 μm), corresponding to a peak output power 182 mW.     

Single-frequency terahertz source pumped by Q-switched fiber lasers based on difference-frequency generation in GaSe crystal

We demonstrate a unique terahertz (THz) source that is compact, utilizes recently developed all-fiber Q-switched lasers, and is based on difference-frequency generation in a GaSe crystal. A single piezo simultaneously Q switched the two fiber lasers by using stress-induced birefringence, to achieve the temporal overlap of pulses from the two fiber lasers. These correlated pulses then combine in the GaSe crystal to produce coherent and highly monochromatic THz pulses. The peak power for this THz source can reach 0.53 mW, corresponding to an average power of 0.43 microW and a conversion efficiency of 4.75 x 10(-7). The estimated linewidth of this THz source can be as narrow as approximately 35 MHz or 1.17 x 10(-3) cm(-1).     

Improved dielectric and electro-optical parameters of nematic liquid crystal doped with magnetic nanoparticles

This study investigates the effect of magnetic nanoparticles(NPs) on the weakly polar nematic liquid crystal(NLC).Different parameters of dielectric data were measured for both the homeotropic and planar aligned samples as a function of frequency and temperature and the substantial changes have been noticed for the doped systems. Dielectric permittivity has been increased after the dispersion of magnetic NPs in the pure NLC. Dielectric anisotropy has also been influenced by incorporating the magnetic NPs with the NLC molecules. These results were attributed to the dipole–dipole interaction between the magnetic nanoparticles and nematic liquid crystal molecules. Electro-optical study indicated the faster rise time and fall time of the doped systems as compare to pure NLC. Threshold voltage has been calculated and found to be decreased for the doped systems. Moreover, we have also calculated the rotational viscosity and the splay elastic constant for pure and the doped systems. Both the rotational viscosity and splay elastic constant of the doped systems are found to be considerably lower than those of pure NLC. Change in these properties has been explained on the basis of molecular disturbances created by the interaction between the magnetic nanoparticle and LC director. This study reveals that the inclusion of magnetic NPs in weakly polar NLC can be useful to enhance the basic properties of the weakly polar NLC and make it a promising material for many display applications.     

Hf-sputtered indium oxide films doped with tin

Indium oxide films doped with tin (ITO-films) have been hf-sputtered from an 80 at-%In₂O₃/20 at-%SnO₂ target onto glass substrates. The sputter atmosphere contained mainly argon (10⁻²Torr) with addition of oxygen (0≦p _{O 2}≦2·10⁻²Torr). The sputtered films aren-conductors. The conductivity and density of charge carriers depend on the oxygen content of the sputter gas. They could be varied by two orders of magnitude. In air or in oxygen atmosphere the films oxidize at the surface and for a certain depth beneath the surface, thus decreasing the conductivity. The Hall mobility of the sputtered films is smaller (≈10 cm²V⁻¹ s⁻¹) than one observes at ITO films produced by CVD sparaying or other methods. The conductivity of as sputtered films approached maximum values of about 1000Ώ⁻¹cm⁻¹.     

Second harmonic generation in a strontium barium niobate crystal with a random domain structure

The phenomenon of the second-harmonic (SH) generation in a strontium barium niobate (SBN) crystal in directions not obeying the conditions of phase matching for spatially homogeneous media has been studied. The appearance of the SH signal is interpreted as resulting from the quasi-phase-matching nonlinear wave interaction due to the random domain structure of the SBN crystal containing acicular ferroelectric microdomains. A theoretical model describing the SH generation in such two-dimensional, spatially inhomogeneous nonlinear optical structures is proposed. An analysis of the second-harmonic emission directivity patterns shows that the main contribution to the noncollinear SH generation in SBN is due to near-surface domains extending to a depth of up to several dozen microns.     

HF sputtered indium oxide films doped with tin

Indium-tin-oxide films (ITO films) sputtered in Ar-atmosphere with and without addition of oxygen reveal an irreversible increase in conductivity during annealing in vacuum. This annealing process increases drastically the density of free electrons, while the Hall mobility changes only slightly. Below the annealing temperature the temperature dependence of the conductivity is reversible. In films with low density of free electrons, which behave like non-degenerated semiconductors, two activation energies for the mobility could be found. The irreversible changes, observed during annealing in the vacuum, are explained by diffusion of oxygen from the interior of the film to the surface, followed by desorption of the oxygen from the surface into the vacuum. The excess oxygen in the non-stoichiometric films plays the role of electron traps. The irreversible effects during annealing in the vacuum are partly reversible in the long run. If the annealed films are exposed to oxygen or air their conductivity decreases because of diffusion of oxygen from the surface into the film.