52Cr原子光刻制作纳米结构研究

纳米结构制作技术中,原子光刻具有独特的优势.为了能够达到纳米制作的要求,并得到所需的沉积条纹,设计了一套实验装置,并分别对原子光刻技术中的原子源、激光系统、稳频系统、原子准直系统和沉积结果进行具体的分析.根据所设计的实验装置,采用分步实验的方式,对各子系统进行了相关数据的采集和测试.其中,稳频精度达到了0.26 MHz精度,铬原子发散角经激光冷却系统由4.5 mrad降低到了0.9 mrad,最后沉积的纳米条纹间距为234 nm条纹高度约为0.276 nm.     

通过控制原子实现纳米图形制作研究

基于激光冷却和捕获原子的原理,初步探讨了利用原子进行纳米量级图形制作的基本原理和实验研究。研究结果表明,此可实现分辨率高达几个纳米大小的超微细图形制作,制作效率极高。     

原子光刻及关键技术分析

文章对原子光刻进行了深入的分析,介绍了其基本概念、工作机理、相关实验方案,针对原子光刻的原子捕获、激光稳频、原子束聚焦和沉积等关键技术,进行了分析和探讨。     

利用电子束光刻制备晶面依赖的硅纳米结构

利用电子束光刻和各向异性湿法腐蚀技术,在(100)SOI衬底上成功地制备出晶面依赖的硅纳米结构.这项技术利用了硅的不同晶面在碱性腐蚀溶液中具有不同腐蚀速率的特性.纳米结构脊部宽度的最小尺寸可以达到10nm以下.扫描电镜和原子力显微镜的观察表明,利用这种方法制备出来的纳米结构具有很好的重复性,而且表面光滑.     

亚稳态氖原子光刻的实验研究

用亚稳态氖原子束进行了原子光刻实验。用栅网作掩膜 ,以扩散泵油的有机分子在高能亚稳态氖原子作用下所生成的碳膜作抗蚀剂 ,在硅片上刻蚀出分辨率为 2 μm的微结构 ,为进一步的纳米级原子光刻技术的研究打下了基础。     

铬原子束的激光多普勒冷却准直检测实验研究

本文采用基于激光感生荧光（LIF）的位移探测系统检测了铬原子束中轴向定量百分比原子数的冷却准直发散角,评价了激光的多普勒冷却准直效果。实验结果得到当冷却激光功率为45mW,作用长度为24mm,失谐量为-0.5Γ的情况下,铬原子束中轴向定量50%原子数的发散角由冷却准直前的1.07±0.10mrad减小到冷却准直后的0.46±0.10mrad,并且其准直发散角随着冷却激光功率的增加而减小。文章最后用半经典理论数值模拟计算了实验结果并与之作了比较。     

铬原子束的激光多普勒冷却准直检测实验研究

本文采用基于激光感生荧光(LIF)法的位移探测系统检测了铬原子束中轴向定量百分数原子数的准直发散角,定量评价了激光的多普勒冷却准直效果.实验结果得到当冷却激光功率为45mW,作用长度为24nm,失谐量为-0.5T的情况下,铬原子束中轴向定量50%原子数的准直发散角由冷却准直前的1.07±0.10mrad减小到冷却准直后的0.46±0.10mrad,并且其发散角随着冷却激光功率的增加而减小.文章最后用半经典理论数值模拟计算了实验结果并作了比较.     

利用电子束光刻制备晶面依赖的硅纳米结构

利用电子束光刻和各向异性湿法腐蚀技术,在(100)SOI衬底上成功地制备出晶面依赖的硅纳米结构.这项技术利用了硅的不同晶面在碱性腐蚀溶液中具有不同腐蚀速率的特性.纳米结构脊部宽度的最小尺寸可以达到10nm以下.扫描电镜和原子力显微镜的观察表明,利用这种方法制备出来的纳米结构具有很好的重复性,而且表面光滑.     

激光驻波透镜聚焦原子束制作超微细图形研究

介绍将原子束激光准直技术和驻波聚焦沉积技术用于制作纳米级图形的基本原理和实验系统设计，研究了驻波透镜对原子束的聚焦特性，数值结果显示在原子束高度准直的情况下，原子束在置于焦平面处的基底上所沉积的条纹半高宽为l0nm左右，可以实现纳米级超微细图形的制作。     

驻波透镜聚焦原子束制作纳米图形研究

介绍了将激光驻波聚焦原子束技术用于制作纳米级图形的基本原理和实验系统设计。研究了驻波透镜对原子束的聚焦特性及像差，数值结果显示原子束在置于焦平面处的基底上所沉积的条纹半高宽为10nm左右，可以实现纳米级超微细图形的制作。同时给出了实验装置及初步实验。     

Two-dimensional optical mask design and atom lithography

Atom lithography is one of the latest proposals for high-resolution printing. The mask design and generation is key step for implementation of this method. In this paper, we have theoretically investigated and proposed a new method for two-dimensional optical mask design in atom lithography. A new method for realization of our proposed technique based on guided modes will present. With our proposed idea one can easily print every kind of two-dimensional patterns. This method can lead us to produce the nano-scale electronic and optical devices and systems. Also, a suitable algorithm for mask generation is proposed.     

Comprehensive defect analysis methodology for nano imprint lithography

Because of the non traditional elements involved in both the manufacture of nano imprint lithography (NIL) templates [T. DiBiase, J. Maltabes, B. Reese, M. Ahmadian, SPIE 6151 (2006)] and the resulting features printed on substrates, methods and procedures for effectively locating, tracking and identifying defect mechanisms need to be modified and refined from the traditional methods employed by the semiconductor industry [I. Peterson, G. Thompson, T. DiBiase, S. Ashkenaz, R. Pinto, Yield Management Solutions, KLA-Tencor Spring, (2000)].Since NIL involves pattern structures defined at 1× magnification, there is no defect “forgiveness” such as with conventional 4× optical reduction lithography. In addition, NIL is performed with the patterning tooling (template) in full contact with the casting material (in this case, UV curable monomer) used to define the final features on the substrate of interest. Surface chemistry and substrate interactions quickly become obvious crucial factors in defect formation mechanisms.This article describes a few non-traditional approaches to working with the extreme dynamic range of defect types found in the step and repeat NIL process.     

Embedded nano channels fabricated by non-selective reverse contact UV nanoimprint lithography technique

In this work, a novel nanofabrication technique is presented, namely “Reverse contact Ultraviolet Nanoimprint Lithography” (RUVNIL). It is based on reverse nanoimprint lithography and ultraviolet contact lithography. It provides flexibility in building complex three-dimensional structures allowing selective imprint over pre-patterned surfaces with or without residual layer in opposition to what is often encountered in the normal NIL process. We have investigated and optimized the imprinting parameters that are required for three-dimensional nanofabrication and applied it to the fabrication of nano-fluidic channels. This lithography technique is a very promising process for three-dimensional nanofabrication.     

High aspect ratio nano mold fabrication by advanced edge lithography without CVD

Very narrow SiO₂ line patterns with extremely high aspect ratio are fabricated on a silicon wafer by new edge lithography process. The simple process without chemical vapor deposition process is developed. The Si step etching is carried out by F radical dominant etching by reducing the loading effect. The straight line of 25 nm width and 700 nm height is fabricated. The circular line with 40 nm width and 400 nm height is also fabricated. The aspect ratios for the straight and circular lines are 28 and 10, respectively. In order to the fabricate imprint mold, the fabricated narrow lines are replicated to a nickel by the electro forming. The nickel replica with 40 nm cavity width is successfully fabricated.     

高能电子束纳米曝光系统的研制

微电子产业的飞速发展要求半导体器件的最小特征尺寸越来越小。传统的光学光刻技术由于受到光的衍射等限制，开始面临挑战。电子束曝光技术具有高分辨、长焦深、无需掩模等优点，成为下一代光刻技术中极具发展潜力的一种。     

基于微型控制器的原子光刻系统自动化控制研究

原子光刻系统的设备庞大而复杂,在实验过程中温度及稳频光等参数都需要监视和控制。针对目前多采用人员值守的方式对设备进行操控导致实验效率低下的现状,介绍了原子沉积原理和原子沉积实验装置的构造及主要功能,提出了原子沉积实验装置中温度控制方案和稳频光的差分信号数据采集方案。通过完成对温度信号和稳频光信号等实验数据的自动采集与记录,实现了原子光刻系统的温控系统自动化和激光稳频系统的远程控制。该方案不仅提高了实验效率,而且对USB开发人员和自动化研究人员也具备一定的参考价值。     

Development of a 100keV electron beam nano lithography system

A wide range energy (25, 50, 100keV) electron beam lithography system with ZrO/W Schottky electron source and UHV chamber has been developed. The electron probe stability of 2.5%/hour is measured, and a beam diameter of 3nm is confirmed at 100keV beam energy. The ultimate pressure of bakeable work chamber is confirmed to reach 4×10⁻¹⁰Torr. With the UHV chamber and a gas jet nozzle, this system allows to perform in-situ electron beam nanolithography by combining with UHV multichamber systems.     

Simulation tool design for the two-axis nano stage of lithography systems

For advanced electron beam lithography systems, a simulation tool for a two-axis nano stage is developed in this paper. The stage is equipped with piezo-actuators and flexure guides. Even if piezo-actuators are believed to be feasible for realizing nano scale motions, it is difficult to predict their characteristics due to their nonlinearities such as hysteresis and creep. In this paper, the nonlinear properties are modeled considering the input conditions. In detail, the hysteresis is described as a first order differential equation with 24 sets of the hysteresis parameters and the creep is modeled as a time-dependent logarithmic function with two sets of creep parameters. The characteristics of the flexure guides are analyzed using the finite element method and are embodied into a multi-body-dynamics simulation tool. The dynamic behavior of the simulation tool is compared with the experimental data.     

结合烷烃硫醇小分子自组装单层的原子光刻技术——以壬烷硫醇和12烷硫醇为例

采用不同网格尺寸的透射电镜铜网作为掩模,以烷烃硫醇类小分子自组装单层作为光刻胶,光学质量的云母为衬底,用亚稳氦原子光刻技术制备具有纳米台阶的金膜图形,最终用原子力显微镜分析表征.结果表明:这种技术可将具有钠米台阶的正负图形很好地传递到金膜,具有高的可信度.同时,在不同时的实验中光刻图形的重复性很好.