带间级联激光器电子注入区优化研究(特邀)EI北大核心CSCD

带间级联激光器有源区内部的物理机制复杂,尚未得到充分研究。优化了电子注入区结构,通过减小InAs/AlSb啁啾超晶格中InAs量子阱的厚度促进电子向光增益区的注入,在较低的电子注入区掺杂浓度下满足了光增益区电子数和空穴数基本相等的注入平衡条件,降低了有源区中自由载流子吸收和杂质散射造成的光损耗。采用该有源区结构的带间级联激光器实现了较好的室温激射性能,腔长4 mm、脊宽20μm且腔面未镀膜器件的阈值电流为200 mA,单腔面出光功率为55 mW。通过分析2~5 mm不同腔长器件的电压-电流-光功率性能,得到器件的波导损耗仅为3 cm^(-1),有源区载流子寿命为0.7 ns。     

质子注入能量对垂直腔面发射激光器的阈值和功率的影响

文章研究了如何兼顾质子注入型垂直腔面发射激光器的功率和阈值性能.从模拟和实验两方面分析了质子注入能量与器件功率和阈值特性的关系.发现注入能量过高时,损伤有源区,降低了功率性能.而能量过低则会减弱对注入电流的限制,增加阈值.计算和实验结果表明,对于文中的器件结构,315 keV的注入能量是合适的.在10μm的注入孔径下获得器件的阈值为4.3 mA,功率为1.7 mW.     

光子晶体垂直腔面发射激光器的电流分布研究

对氧化限制型外腔式光子晶体垂直腔面发射激光器注入到有源区的电流密度分布进行了分析研究.提出三维电流分布计算模型,研究了光子晶体结构对电流密度分布和器件串联电阻的影响.研究发现,光子晶体孔刻蚀深度越深,电流分布圆对称性越差,引起的串联电阻越大.不同光子晶体图案对电流分布的均匀性和圆对称性也有很大的影响.该模型对于研究、设计氧化限制型外腔式光子晶体垂直腔面发射激光器提供了一个有用的分析方法.     

载流子输运和寄生参数对隧道再生双有源区垂直腔面发射激光器调制特性的影响

建立了一种适用于多量子阱和多有源区的多层速率方程模型. 通过小信号分析,得到了光子密度、载流子俘获、逃逸和隧穿时间等关键参数对单有源区和隧道再生双有源区垂直腔面发射激光器频率响应特性的影响,并分析了在相同驱动电流下隧道再生双有源区器件调制带宽大于单有源区器件的原因. 进一步研究了隧道再生双有源区内腔接触氧化限制型垂直腔面发射激光器的寄生电参数及其寄生电路,对其频率响应进行了模拟分析. 关键词： 垂直腔面发射激光器 速率方程 调制特性 隧道再生     

垂直腔面发射激光器热特性的实验研究

本文通过对垂直腔面发射激光器发光波长随器件本身温度变化的实验研究,得到了我们研制的垂直腔面发射激光器在连续工作状态下内部温度升高的值,并且通过对激光器脉冲激射阈值随器件本身温度变化的关系研究,得到了我们现有工艺条件下,研制低阈置器件所需的实验数据.     

利用光学薄膜模型研究垂直腔面发射激光器的光学特性

可以把垂直腔面发射激光器看作是多层光学薄膜,应用光学薄膜原理对其光学薄膜的特性进行了研究。计算分析了布拉格反射镜和谐振腔模的反射谱受器件结构变化的影响。通过利用菲涅耳系数矩阵法计算,得到了光在垂直腔面发射激光器器件结构中形成的驻波场分布。结果表明,利用菲涅耳系数矩阵法设计垂直腔面发射激光器的光学薄膜是一种快捷准确的方法。     

径向桥电极高功率垂直腔面发射激光器

为改善高功率垂直腔面发射半导体激光器的热特性,提高它的输出功率,研制了新型径向桥电极高功率垂直腔面发射半导体激光器器件,对新型半导体激光器的结构模型进行理论分析表明,采用径向桥式电极可以降低器件P型DBR电阻,减小焦耳热;降低热阻,提高器件的散热能力。实验制备了出光孔径同为200μm的径向桥电极与常规电极的高功率垂直腔面发射半导体激光器,并对器件的性能进行了实验对比测试。结果表明径向桥电极高功率垂直腔面发射半导体激光器器件的微分电阻为0.43Ω;室温下最大输出功率可达340 mW,是常规电极垂直腔面发射半导体激光器的1.7倍;器件的热阻为0.095℃/mW,在80℃时,仍能正常激射,具有良好的热特性,径向桥电极高功率垂直腔面发射半导体激光器的光电特性与温度特性要远好于常规电极的高功率垂直腔面发射半导体激光器器件。     

808nm大孔径垂直腔面发射激光器研究

垂直腔面发射激光器(VCSEL)中的载流子聚集效应使注入到有源区的工作电流只是通过边缘环形区域很窄的通道,激光功率密度分布不均匀;尤其当器件尺寸较大时,激射光斑呈现环状,环中间光强很弱.这是研制电抽运高功率大尺寸VCSEL尤为突出的技术难题.采用新型结构成功研制出808 nm波段高功率大孔径VCSEL,在注入电流为1A时,室温下连续输出功率达0.3 W. 关键词： 半导体激光器 垂直腔面发射激光器 高功率 大孔径     

高功率980nm垂直腔面发射激光器的亮度特性

在循环水冷却(工作环境温度控制在15℃)和连续注入电流条件下,从垂直腔面发射激光器(VCSEL)亮度基本定义出发,实验测量了不同注入电流时口径为400μm的高功率980nm InGaAs/GaAs应变量子阱垂直腔面发射激光器(VCSEL)的亮度特性。结果表明:在注入电流4 A时,随着注入电流的增加,亮度也跟着增加;当注入电流4A时,尽管输出功率在增加,但是器件的光束质量变差,M2因子升高,表明此时影响器件亮度的主导因素是M2因子,所以亮度减小;在注入电流为4A,输出功率为1.2W时,亮度达到最大值2.43kW/cm2.sr,此时的光束质量最好,M2因子为207。最后,分析了影响高功率VCSEL器件亮度特性的主要因素,提出了提高器件亮度特性的解决方法。     

键合界面对面发射激光器光与热性质的影响

通过界面有效吸收系数的计算及界面对腔模的反射率的影响可知,采用双面键合技术制备面发射激光器应使键合界面处于驻波场分布零点位置,同时界面厚度应该小于20 nm以使器件光学性能受界面吸收系数的影响较小.采用有限元方法分析VCSEL温度分布,结果证实薄的键合界面使VCSEL有源区温度对界面的热导率和电导率改变不敏感,而厚的键合界面将可能使有源区温度有较大地升高,给器件带来严重的不良影响.亲水键合和疏水键合的SEM照片说明疏水处理界面较薄,适合用于器件的制备.而亲水处理界面厚度>40 nm,对器件的光、热特性不利 关键词： 键合 面发射激光器 热导率 电导率     

Tunable single-mode Fabry-Perot laser diode using a built-in external cavity and its modulation characteristics

A tunable single-mode laser is obtained by using a weakly coupled cavity structure involved in a coaxially packaged Fabry-Perot laser diode. The cleaved end facet of the coupling fiber becomes an optical reflector and forms an external cavity with a laser facet. The single-mode oscillation condition is controlled and stabilized by tuning the operating temperature. The tuning range is about 10 nm with the side-mode suppression ratio of more than 27 dB when the temperature changes from 11.5 degrees C to 25 degrees C. Direct modulation characteristics were investigated, and our results show that a shorter external cavity can bear deeper modulation depth.     

分布反馈光纤激光器阵列中外腔反馈特性研究

以半导体激光器中的复合腔模型和实测的分布反馈光纤激光器的外腔端面反射率为基础,对不同反射率条件下分布反馈光纤激光器的输出功率进行了仿真,同时搭建了二基元分布反馈光纤激光器阵列实验平台,对仿真结果进行了验证.仿真与实验结果表明:外腔反馈光重新注入分布反馈光纤激光器会增加激光器的输出功率,降低了阵列的输出功率平坦性.并且外腔端面反射率越大,这种平坦性降低的效果越明显.在构建分布反馈光纤激光器阵列时,应考虑外腔反馈对阵列输出功率平坦性造成的影响,尽量选择外腔端面反射率较小的激光器进行组阵.     

强反馈光纤光栅外腔半导体激光器

在理论上对强外腔反馈情形的半导体激光器线宽压窄效应进行了分析，对消反膜剩余反射率，外腔反射率，外腔腔长对线宽压缩的影响进行了研究，在实验上采用光纤光栅作为反馈元件，与一端镀有消反膜的１．５μｍ波段的常规多纵模交导体激光器耦合，构成强反馈光纤光栅外腔半导体激光器，得到单频窄线宽的激光输出，静态下边模抑制比大于３０ｄＢ，线宽小于１２０ｋＨｚ。     

电流孔的尺寸对双氧化限制垂直腔面发射激光器阈值的影响

通过双氧化限制垂直腔面发射激光器中电场、载流子密度、光场和热场空间耦合方程自洽数值求解,研究了垂直腔面发射激光器中阈值特性.得到了氧化层及有源区附近的电势,模拟电流孔的边缘效应,给出了不同双氧化限制电流孔半径下阈值电流密度、载流子密度、基模光场和热场的空间分布.发现了实现最小阈值电流的最佳限制电流孔半径,进而设计了双氧化限制垂直腔面发射激光器的结构. 关键词： 双氧化限制垂直腔面发射激光器 自洽 阈值     

Light Squeezing in a Fabry–Perot Cavity

A quantum mechanical model for the study of quadrature squeezing in radiation coming out of Fabry–Perot cavity containing nonlinear Kerr medium has been proposed. We have incorporated the vacuum fluctuations entering in the cavity through unused ports. The analysis has been applied to a sample of GaAs filled in the Fabry–Perot cavity and irradiated by an off-resonant Co:MgF₂ laser. Limitations on achievable squeezing due to incident pump power, interaction time, nonlinear coupling parameter and facet reflectivities have been discussed and it is seen that low reflectivity of front facet and high reflectivity of rear facet of the cavity produces substantial squeezing.     

Continuous-wave operation of a broadly tunable thermoelectrically cooled external cavity quantum-cascade laser

Continuous-wave operation of an external cavity quantum-cascade laser on a thermoelectric cooler is reported. The active region of the gain element was based on a bound-to-continuum design emitting near 5.15 microm. The external cavity setup was arranged in a Littrow configuration. The front facet of the gain chip was antireflection coated. The laser could be tuned over more than 170 cm(-1) from 4.94 to 5.4 microm and was single mode over more than 140 cm(-1). The output power was in excess of 10 mW over approximately 100 cm(-1) and in excess of 5 mW over approximately 130 cm(-1) at -30 degrees C.     

New Approach to Investigation of Tunable External Cavity Semiconductor Lasers

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Dual-wavelength distributed Bragg reflector semiconductor laser based on composite resonant cavity

We report a monolithic integrated dual-wavelength laser diode based on a distributed Bragg reflector (DBR) composite resonant cavity. The device consists of three sections, a DBR grating section, a passive phase section, and an active gain section. The gain section facet is cleaved to work as a laser cavity mirror. The other laser mirror is the DBR grating, which also functions as a wavelength filter and can control the number of wavelengths involved in the laser action. The reflection bandwidth of the DBR grating is fabricated to have an appropriate value to make the device work at the dual-wavelength lasing state. We adopt the quantum well intermixing (QWI) technique to provide low-absorption loss grating and passive phase section in the fabrication process. By tuning the injection currents on the DBR and the gain sections, the device can generate 0.596 nm-spaced dual-wavelength lasing at room temperature.     

2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography

We report a type-I Ga Sb-based laterally coupled distributed-feedback(LC-DFB) laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings are fabricated alongside the ridge waveguide by interference lithography. Index-coupled LC-DFB laser with a cavity of 1500 μm achieves single longitudinal mode continuous-wave operation at 20℃ with side mode suppression ratio(SMSR) as high as 24 dB.The maximum single mode continuous-wave output power is about 10 mW at room temperature(uncoated facet). A low threshold current density of 230 A/cm~2 is achieved with differential quantum efficiency estimated to be 93 mW/A. The laser shows a good wavelength stability against drive current and working temperature.     

Wavelength Tuning Characteristics of a Vertival Cavity Surface Emitting Laser Diode with an External Short Cavity

The characteristics of a wavelength tunable vertical cavity surface emitting laser diode (VCSEL) with an external short cavity are analyzed, in which the oscillation wavelength can be changed over several tens of nanometers with a nearly constant optical power by slightly altering the external cavity length. Analysis is based on rate equations for the optical power and carrier density, taking the effect of carrier-induced refractive index change into consideration, together with the study of behaviors of a complex resonator. The reflection coefficient r₂ of a laser facet facing the external mirror is shown to affect notably the characteristics of wavelength tuning, optical power and carrier density for a change of the external cavity length. It is also noticed that the wavelength change for this length becomes slower with relatively larger r₂ due to an increasing contribution of the effect of carrier-induced refractive index change, within the optical gain spectrum of the laser diode.