石英玻璃片的化学抛光工艺研究

石英玻璃是紫外光刻、激光核技术等精密光学系统的关键光学元件。石英玻璃在加工过程中易出现表面及亚表面损伤和蚀坑等缺陷问题,化学抛光能有效消除石英玻璃的亚表面损伤。介绍了石英玻璃片的化学抛光工艺原理和过程,利用正交实验法优化了石英玻璃化学抛光工艺参数,分析了化学抛光过程中抛光液成分、抛光液温度和抛光时间对石英玻璃片表面粗糙度的影响。实验结果表明,采用氟化氢铵、水和丙三醇配置的化学抛光液,在最优化的工艺参数时,石英玻璃片经过化学抛光,表面粗糙度可降到100 nm左右,可见光透过率最高可达到89%。为石英玻璃光学零件的化学抛光工艺提供了理论依据和技术支持。     

高精度数控化学抛光技术

高精度光学表面数控化学抛光技术研究是针对强激光光学元件的应用需求，研究光学表面的化学抛光加工机理；基于Marangoni界面效应，采用数控化学抛光技术来实现光学表面面形及微结构形貌的高精度控制；为完成高精度激光光学元件(包括传统意义上的激光光学镜面和新型的静态连续波前校正板等)的制造进行新原理和新手段的探索。     

化学钢化光学窗口玻璃强度分析与检测

以脆性材料的断裂力学为基础,根据化学钢化光学窗口玻璃表面应力分布状态,分析了化学钢化对光学窗口玻璃强度的影响。将Weibull模型与玻璃微裂纹生长理论相结合,分析并提出了化学钢化光学窗口玻璃的强度检验和寿命预测方法,为化学钢化光学窗口玻璃的强度设计和检验提供指导。     

超声振动打孔对微晶玻璃表面质量的影响

在超声振动打孔时,微晶玻璃最大切深决定了孔壁表面质量。基于脆性断裂材料去除机理,建立了简单实用的超声打孔材料去除率理论关系式,得出影响表面质量的主要工艺参数为：金刚石粒径、刀具转速和进给速度。通过正交实验方法,得到了微晶玻璃超声打孔的最佳工艺参数,金刚石粒径650#、刀具转速12 000 rpm和进给速度5 mm/min。通过工艺参数优化后,微晶玻璃打孔质量得到明显提升,孔壁经过化学抛光处理后,表面粗糙度Ra达到0.055 1μm,能有效提升激光陀螺腔体的真空特性和激光陀螺的性能。     

添加剂在固着磨料抛光中的作用

本文通过实验说明采用固着磨料抛光不同玻璃材料的光学零件时,在抛光液(水)中有选择的加入适量添加剂,可使抛光效率提高0.2～1倍多,并能改善零件表面粗糙度.     

GeS2-Ga2S3-CdS透明表面微晶玻璃的二阶非线性光学效应

采用热诱导法制备了GeS2-Ga2S3-CdS硫系微晶玻璃,X射线衍射(XRD)、透射光谱、扫描电子显微镜(SEM)测试结果表明,获得了含CdGa2S4微晶的透明表面微晶玻璃。采用Maker条纹法研究了微晶玻璃的二次谐波(SHG)效应,结果表明玻璃中的CdGa2S4微晶诱导了二次谐波效应的产生。CdGa2S4微晶在玻璃表面择优生长时,破坏玻璃的各向同性,可获得两个包络的Maker条纹,且入射角在±(35°~50°)左右时,二次谐波的相对强度出现最大值,二阶非线性强度最大可为α-石英单晶的8倍;CdGa2S4微晶在玻璃表面无择优生长时,由于玻璃表面较大的CdGa2S4晶粒的散射作用,只能获得一个包络的Maker条纹,即入射角为0°时,二次谐波的相对强度出现最大值。     

绿色环保化学机械抛光液的研究进展

原子级加工制造是实现半导体晶圆原子尺度超光滑表面的有效途径.作为大尺寸高精密功能材料的原子级表面制造的重要加工手段之一,化学机械抛光(chemical mechanical polishing,CMP)凭借化学腐蚀和机械磨削的耦合协同作用,成为实现先进材料或器件超光滑无损伤表面平坦化加工的关键技术,在航空、航天、微电子等众多领域得到了广泛应用.然而,为了实现原子层级超滑表面的制备,CMP工艺中常采用的化学腐蚀和机械磨削方法需要使用具有强烈腐蚀性和高毒性的危险化学品,对生态系统产生了不可逆转的危害.因此,本文以绿色环保高性能抛光液作为对象,对加工原子量级表面所采用的化学添加剂进行分类总结,详尽分析在CMP过程中化学添加剂对材料表面性质调制的作用机理,为在原子级尺度下改善表面性质提供可参考的依据.最后,提出了CMP抛光液在原子级加工研究中面临的挑战,并对未来抛光液发展方向作出了展望,这对原子尺度表面精度的进一步提升具有深远的现实意义.     

氟锆酸盐光纤玻璃中析晶相的电子探针分析

本文利用大视场光学显微镜、扫描电子显微镜配合能量色散谱仪及分光光谱仪对zrF_4-BaF_2-LaF_3-AlF_3-NaF氟化物玻璃中存在的一些微晶颗粒进行了分析,确定为玻璃中不同尺寸的LaF_3晶粒的存在,并对所采用的分析方法的利弊进行了讨论.     

掺铒磷酸盐玻璃离子交换波导表面保护的研究

对离子交换波导制备过程中掺铒磷酸盐玻璃表面的侵蚀问题进行了研究,分析了产生侵蚀的原因,提出镀K9玻璃薄膜的方法,对掺铒磷酸盐玻璃表面进行保护.采用光学显微镜和原子力显微镜对波导表面特性进行了表征,同时对平板波导的光学特性进行了测试.研究表明K9玻璃薄膜不仅能够对掺铒磷酸盐玻璃起到保护作用,同时允许交换离子透过进入磷酸盐玻璃形成波导层.     

4.3m望远镜主镜材料选择与镜坯设计

分析微晶玻璃必要性和组成,阐述中俄微晶玻璃的一些优点和区别,并给出主镜毛坯设计实例。     

Improvement of laser damage thresholds of fused silica by ultrasonic-assisted hydrofluoric acid etching

Polished fused silica samples were etched for different durations by using hydrofluoric(HF) acid solution with HF concentrations in an ultrasonic field. Surface and subsurface polishing residues and molecular structure parameters before and after the etching process were characterized by using a fluorescence microscope and infrared(IR) spectrometer, respectively. The laser induced damage thresholds(LIDTs) of the samples were measured by using pulsed nanosecond laser with wavelength of 355 nm. The results showed that surface and subsurface polishing residues can be effectively reduced by the acid etching process, and the LIDTs of fused silica are significantly improved. The etching effects increased with the increase of the HF concentration from 5 wt.% to 40 wt.%. The amount of polishing residues decreased with the increase of the etching duration and then kept stable. Simultaneously, with the increase of the etching time, the mechanical strength and molecular structure were improved.     

Chemical etching investigation of polycrystalline p-type 6H-SiC in HF/Na2O2 solutions

In this work, an experimental study on the chemical etching reaction of polycrystalline p-type 6H-SiC was carried out in HF/Na₂O₂ solutions. The morphology of the etched surface was examined with varying Na₂O₂ concentration, etching time, agitation speed and temperature. The surfaces of the etched samples were analyzed using scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) Fourier transform infrared spectroscopy (FT-IR) and photoluminescence. The surface morphology of samples etched in HF/Na₂O₂ is shown to depend on the solution composition and bath temperature. The investigation of the HF/Na₂O₂ solutions on 6H-SiC surface shows that as Na₂O₂ concentration increases, the etch rate increases to reach a maximum value at about 0.5 M and then decreases. A similar behaviour has been observed when temperature of the solution is increased. The maximum etch rate is found for 80 °C. In addition, a new polishing etching solution of 6H-SiC has been developed. This result is very interesting since to date no chemical polishing solution has been developed on the material.     

光学元件亚表面缺陷的损伤性检测方法

在磨削、研磨和抛光加工过程中产生的微裂纹、划痕、残余应力等亚表面缺陷会导致熔石英元件抗激光损伤能力下降,如何快速、准确地检测亚表面损伤成为光学领域亟待解决的关键问题。采用HF酸蚀刻法、角度抛光法和磁流变斜面抛光法对熔石英元件在研磨加工中产生的亚表面缺陷形貌特征及损伤深度进行了检测和对比分析,结果表明,不同检测方法得到的亚表层损伤深度的检测结果存在一定差异,HF酸蚀刻法检测得到的亚表面损伤深度要比角度抛光法和磁流变斜面抛光法检测结果大一些。且采用的磨粒粒径越大,试件表面及亚表面的脆性断裂现象越严重,亚表面缺陷层深度越大。     

Improvement of the polishing treatment for niobium surfaces of superconducting cavity resonators

For superconducting cavities made from niobium sheet, which are interesting in the field of accelerator applications, smooth and defect free inner surfaces are needed to achieve a high unloadedQ along with high accelerating field strength. These can be obtained using chemical polishing procedures. Whereas normally a mixture of HF, HNO₃, and H₃PO₄ is applied, we chose the known bath containing HF, HNO₃, and H₂SO₄ and worked above 50 °C. The surface quality was judged by visual inspection using a light microscope as well as by microwave measurements of one spherical resonator. The new method gave less grain boundary etching and, with high field levels, an enlarged unloadedQ.     

Investigation of porous silicon carbide as a new material for environmental and optoelectronic applications

In this paper, we present an experimental study on the chemical and electrochemical etching of silicon carbide (SiC) in different HF-based solutions and its application in different fields, such as optoelectronics (photodiode) and environment (gas sensors). The thin SiC films have been grown by pulsed laser deposition method. Different oxidant reagents have been explored. It has been shown that the morphology of the surface evolves with the etching conditions (oxidant, concentration, temperature, etc.). A new chemical polishing solution of polycrystalline 6H-SiC based on HF:Na₂O₂ solution has been developed. Moreover, an electrochemical etching method has been carried out to form a porous SiC layer on both polycrystalline and thin SiC films. The PL results show that the porous polycrystalline 6H-SiC and porous thin SiC films exhibited an intense blue luminescence and a green-blue luminescence centred at 2.82 eV (430 nm) and 2.20 eV (560 nm), respectively. Different device structures based on both prepared samples have been investigated as photodiode and gas sensors.     

3D features of modified photostructurable glass-ceramic with infrared femtosecond laser pulses

The exclusive ability of laser radiation to be focused inside transparent materials makes lasers a unique tool to process inner parts of them unreachable with other techniques. Hence, laser direct-write can be used to create 3D structures inside bulk materials. Infrared femtosecond lasers are especially indicated for this purpose because a multiphoton process is usually required for absorption and high resolution can be attained. This work studies the modifications produced by 450 fs laser pulses at 1027 nm wavelength focused inside a photostructurable glass-ceramic (Foturan^®) at different depths. Irradiated samples were submitted to standard thermal treatment and subsequent soaking in HF solution to form the buried microchannels and thus unveil the modified material. The voxel dimensions of modified material depend on the laser pulse energy and the depth at which the laser is focused. Spherical aberration and self-focusing phenomena are required to explain the observed results.     

In situ reduction of graphene oxide dispersed in a polymer matrix

Silicon wafers coated with a film of Ag pattern are used for investigating roles of Ag in the fabrication of silicon nanowire arrays (SiNWs) by the electroless chemical etching technique. The diameter of SiNWs grown in the mixed AgNO₃/HF solution ranges from 20 to 250?nm. A growth mechanism for such obtained SiNWs is proposed and further experimentally verified. As a comparison as well as to better understand this chemical process, another popular topic on growing SiNWs in the H₂O₂/HF solution is also studied. Originating from different chemical reaction mechanisms, Ag film could protect the underneath Si in the AgNO₃/HF solution and it could, on the contrary, accelerate etching of the underneath Si in the H₂O₂/HF solution.     

Chemical polishing method of GaAs specimens for transmission electron microscopy

A practical method for transmission electron microscopy specimen preparation of GaAs-based materials with quantum dot structures is presented to show that high-quality image observations in high-resolution transmission electron microscopy (HRTEM) can be effectively obtained. Specimens were prepared in plan-view and cross-section using ion milling, followed by two-steps chemical fine polishing with an ammonia solution (NH₄OH) and a dilute H₂SO₄ solution. Measurements of electron energy loss spectroscopy (EELS) and atomic force microscopy (AFM) proved that clean and flat specimens can be obtained without chemical residues. HRTEM images show that the amorphous regions of carbon and GaAs can be significantly reduced to enhance the contrast of lattice images of GaAs-based quantum structure.     

DF激光器光栅选线实验研究

基于闪耀光栅的分光原理,利用小型直流放电驱动化学激光器,在平凹稳定腔内插入闪耀光栅,建立了选择激光器光栅谱线的实验装置.实验中共获得了14条谱线,测量了每条谱线的功率,计算了波长,分析了选线后谱线条数减少、谱线功率降低的原因.该装置尺寸小,使用比较方便,可以满足连续波DF化学激光器性能研究的需要.     

无损伤超光滑LBO晶体表面抛光方法研究

传统的抛光LBO晶体的方法是选用金刚石抛光粉在沥青抛光盘上抛光。沥青盘易于变形不容易修整,金刚石粉特别硬容易损伤抛光晶体表面。抛光过程中,抛光盘和抛光粉的选择是非常重要的,直接影响到抛光效率和最终的表面质量。新的抛光LBO晶体的方法,其抛光过程是一个化学机械过程,抛光盘、抛光粉和抛光材料相互作用。选用两种抛光盘(培纶和聚氨酯盘),三种较软的抛光磨料(CeO2,Al2O3和SiO2胶体),并在LBO晶体的(001)面进行抛光实验。用原子力显微镜测量和分析了表面粗糙度。结果表明,使用聚氨酯盘和SiO2胶体能够获得无损伤超光滑的LBO晶体表面,其表面粗糙度的RMS为0.3nm。