不同生长环境下砷化镓纳米颗粒的应变场模拟

对于埋嵌在薄膜材料中的纳米颗粒,在其生长过程中总是不可避免地伴随着应变场的产生,而这种应变场的分布能反映纳米颗粒的结构变化,纳米颗粒结构与它的物理性能有重要的关系.研究埋嵌在不同薄膜材料中的纳米颗粒生长过程中的应变场分布对于调控纳米颗粒的物理性能有着重要的意义.本文利用有限元算法分别计算了埋嵌在非晶氧化铝薄膜和非晶二氧化硅薄膜材料中的砷化镓纳米颗粒生长过程中的应变场分布.砷化镓纳米颗粒在以上两薄膜材料生长过程中都受到非均匀偏应变作用.对于埋嵌在氧化铝薄膜中的砷化镓纳米颗粒,其生长过程中,纳米颗粒内部受到的应变大于纳米颗粒表面受到的应变;而对于埋嵌在二氧化硅薄膜中的砷化镓纳米颗粒,纳米颗粒内部受到的应变小于纳米颗粒表面受到的应变.选择砷化镓纳米颗粒生长的薄膜材料可以调控纳米颗粒生长过程中的应变场分布,从而进一步调控纳米颗粒的晶格结构和形貌及其物理性能.     

纳米锗颗粒镶嵌薄膜的吸收光谱研究

用离子束溅射技术和热处理方法，制备出颗粒尺寸和镶嵌密度均可控制的高质量Ｇｅ－ＳｉＯ２纳米颗粒镶嵌薄膜，在室温下测量了不同粒度纳米锗颗粒镶嵌薄膜样品的吸收光谱，观测到在可见光区有较强的光吸收和吸收带边蓝移。研究表明：镶嵌在经缘介质薄膜中的纳米锗颗粒的能量带是量子化的，随着纳米锗粒子平均尺寸的减小，其吸收带隙增加，吸收带边蓝移的程序相应增大。     

Lu_2O_3∶Tb纳米粉末的光致发光特性

用燃烧合成法制备了Lu2O3∶Tb3+纳米粉末。产物为立方相结构,粒径在3~40 nm之间可控。对不同颗粒度的样品的激发光谱、发射光谱和荧光衰减特性进行了研究。在紫外光激发下,样品显示出较强的发光(来自于Tb3+的5D3,4→7FJ跃迁)。同时,样品的光致发光性质在很大程度上受到样品颗粒度的影响,对此现象给出了合理的解释。     

金属纳米薄膜在石墨基底表面的动力学演化

采用分子动力学方法研究了金属Au和Pt纳米薄膜在石墨(烯)基底表面的动力学演化过程,探讨了金属薄膜和石墨(烯)基底间的相互作用对金属纳米薄膜在固态基底表面的去湿以及脱附的动力学演化的影响.研究结果表明,在高温下,相同层数的Au和Pt纳米薄膜在单层石墨基底表面上存在不同的去湿现象,主要表现为厚度较小的Pt纳米薄膜在去湿过程中有纳米空洞形成,而同样厚度的Au薄膜在去湿过程中没有形成空洞.Au和Pt两种金属薄膜在高温下都去湿形成纳米液滴,这些液滴最终都以一定的速度脱离基底.在模拟的薄膜厚度范围内(0.2—2.3 nm),Au和Pt纳米液滴脱离基底的速度随厚度增加表现出不同的变化规律.Pt纳米液滴的脱离速度随薄膜初始厚度的增加先增加后减少,而Au脱离速度随厚度的增加先减少,达到一个临界厚度后脱离速度突然迅速增加.利用薄膜与基底间相互作用的不同导致去湿过程中的黏滞耗散不同,定性分析了这种变化规律的原因.此外,进一步研究还发现金属液滴的脱离时间与薄膜厚度和模拟温度的依赖关系,发现脱离时间随薄膜厚度的增加而增加,随模拟温度的升高而减小.这些研究结果可以为金属镀膜、浮选、表面清洁、器件表面去湿等工业生产过程提供理论指导.     

(Au,Si)/SiO2复合纳米颗粒薄膜的光谱特性

采用复合靶共溅射法制备了(Au，Si)／SiO2复合纳米颗粒薄膜样品，并对其荧光谱作了测量．在理论上分别计算了在强限域效应下和弱限域效应下Si纳晶吸收光谱的峰值位置与晶粒尺寸之间的关系，并采用Drude理论计算了Au／SiO2复合体系的吸收峰的峰值位置与微粒尺寸的关系．给出了(Au，Si)／SiO2体系复合薄膜共振吸收峰的位置随Au和Si的掺杂浓度比和微粒尺寸的相关特征．     

准立方体α-Fe_2O_3纳米薄膜的紫外和红外光谱研究

采用浸渍提拉法制备了准立方体α-Fe2O3纳米薄膜,利用XRD、AFM、UV-Vis和FT-IR对其表面形貌和谱学性质进行了表征。结果表明,α-Fe2O3单层膜是由粒径约为58nm的粒子排布而成,在568、482和386cm-1处有特征红外吸收峰,在紫外区375nm处存在明显的吸收,为Fe-O间的电子跃迁,其吸光度值与膜层数间的较好线性关系说明在一定的速度下挂膜,可以将氧化铁溶胶中的纳米粒子较好地转移到基片上。     

镶嵌在SiO2薄膜中纳米GaAs颗粒的Raman散射研究

纳米GaAs颗粒通过射频磁控共溅法成功地被镶嵌在SiO_2薄膜中.通过不同基片温度下沉积的薄膜的Raman光谱观察到了明显的声子限域效应.其结果表明:当沉积时基片温度低于200℃时,X射线衍射和Raman散射均表现出非晶结构特征;当基片温度升高到300℃时,薄膜内的GaAs具有闪锌矿结构,同时其结构振动纵光学声子模对应的Raman散射峰将从非晶散射峰中分离出来,但同大块材料相比,该峰表现出明显的宽化和红移;随着沉积时的基片温度进一步提高,其宽化和红移相应地减小. 关键词：     

金属纳米颗粒的热导率

本文使用统计模拟方法对金属纳米颗粒的电子平均自由程进行了计算,并考察了纳米颗粒的晶格比热和声子平均群速度,最后应用动力学理论对纳米颗粒的电子热导率和声子热导率分别进行了求解.研究结果表明:具有相同特征尺寸的方形、球形纳米颗粒的无量纲电子(或声子)平均自由程比较接近.金属纳米颗粒的电子热导率远大于声子热导率;电子、声子热导率随着直径减小呈现降低趋势,而电子热导率的颗粒尺度依赖性比声子热导率更为明显;随着颗粒直径进一步减小,声子热导率与电子热导率趋于同一数量级.当纳米颗粒特征尺寸大于4倍块材电子(或声子)平均自由程,其电子(或声子)热导率的颗粒尺度依赖性将减弱.     

金/银纳米颗粒对Eu掺杂薄膜发光特性影响的研究

本文将三种金属纳米颗粒(球形银纳米颗粒、三角形银纳米薄片和三角形金纳米薄片)分别置于Eu(TTFA)3掺杂的Su8薄膜上研究了它们对铕配合物薄膜发光的影响.结果显示,金属纳米颗粒的局域等离子体共振(LSPR)谱对薄膜发光有很好的调控作用.对于LSPR谱分别与铕配合物激发谱和辐射谱重叠较好的球形和三角形两种银颗粒,相比于未放置颗粒时薄膜的发光,放置有颗粒的发光有明显的增强,其中球形银颗粒的样品的发光增强效果更为明显.而对于LSPR谱与铕配合物激发谱和辐射谱都不重叠的三角形片状金颗粒,该颗粒对样品的发光则起到了猝灭作用.     

射频磁控共溅射GaAs/SiO2纳米颗粒镶嵌薄膜的光学性质

应用射频磁控共溅射方法和真空退火方法制备了GaAsSiO2纳米颗粒镶嵌薄膜.X射线衍射实验结果表明,经高温退火的薄膜中形成了面心立方闪锌矿结构的GaAs纳米晶粒,晶粒平均直径为1.5—3.2nm.吸收光谱展示了由于强量子限域引起的1.5—2eV的吸收边蓝移.室温光致荧光(PL)光谱显示了电子重空穴激子与电子劈裂空穴激子的近紫外和紫外双PL谱峰以及深俘获态的PL谱峰.对实验吸收边蓝移量与有效质量模型的蓝移量的悬殊差别、俘获态PL谱的形成以及PL谱线的特征作了解释.应用激光Z扫描技术测量了退火温度为500℃的复合膜在非共振条件下的光学非线性,结果表明,复合膜的非线性折射率系数和非线性吸收系数都比块材GaAs相应的系数增大了5个数量级.光学非线性系数增大主要起因于强量子限域效应 关键词： 射频磁控共溅射 GaAsSiO2纳米颗粒镶嵌薄膜 光谱 激光Z扫描     

Morphology-engineered strain transformation in Ge/GeO2 core/shell nanoparticles

Growth of nanoparticles embedded in a host matrix can lead to substantial strain. Ge/GeO₂ core/shell nanoparticles embedded in amorphous Al₂O₃ matrix is fabricated by the pulsed laser deposition method and rapid thermal annealing technique, which is confirmed by the experimental HRTEM result and consistent with Zhdanov׳s theoretical prediction. A finite-element calculation is performed to investigate the tuning effect on the strain by the morphology evolution of the Ge/GeO₂ core/shell nanoparticle embedded in Al₂O₃ matrix. The simulated result indicates that the strain at the interface between the core and the shell strongly depends on the morphology of the nanoparticles. Moreover, it can be found that there is a dramatic transformation of the strain on Ge core from tensile to compressive strain during the shrinkage of Ge core and the expansion of GeO₂ shell. The simulated results indicate that the strain can be designed by tuning the morphology of the nanoparticles, which provides an opportunity to engineer the properties of the nano-sized core/shell structures.     

Co-doped In2O3 thin films: Room temperature ferromagnets

Laser-ablated Co-doped In₂O₃ thin films were fabricated under various growth conditions on R-cut Al₂O₃ and MgO substrates. All Co:In₂O₃ films are well-crystallized, single phase, and room temperature ferromagnetic. Co atoms were well substituted for In atoms, and their distribution is greatly uniform over the whole thickness of the films. Films grown at 550 °C showed the largest magnetic moment of about 0.5 μ_B/Co, while films grown at higher temperatures have magnetic moments of one order smaller. The observed ferromagnetism above room temperature in Co:In₂O₃ thin films has confirmed that doping few percent of magnetic elements such as Co into In₂O₃ could result in a promising magnetic material.     

Role of the interfacial state: a comparison of Co/Al2O3/NiFe and La0.7Ca0.3MnO3/Al2O3/La0.7Ca0.3MnO3 tunnel junctions

Two junctions of Co/Al₂O₃/NiFe (J₁) and La_0.7Ca_0.3MnO₃/Al₂O₃/La_0.7Ca_0.3MnO₃ (J₂) were prepared to compare their tunneling magnetoresistance (TMR) in consideration of interfacial state effects. The structural and transport properties of the layered samples were characterized by X-ray and magnetic measurements, showing indeed an interfacial state dependence. The influences such as from a CoO sublayer in J₁ and from interfacial coherence in J₂ were discussed. The largest TMR observed amounts to 16% (290 K) for J₁ and 65% (40 K) for J₂.     

Multiplication of electronic excitations in nanophosphors Lu2O3:Eu and Lu2O3:Tb

Luminescence properties of Lu₂O₃:Eu³⁺ and Lu₂O₃:Tb³⁺ nanocrystalline powders with the particle size varying from 46 to 6 nm were studied under excitation by synchrotron radiation in the photon energy range (up to ∼22.5 eV) covering the region where the processes of multiplication of electronic excitation occur. It was found that the excitation spectra of Tb³⁺ emission from all Lu₂O₃:Tb³⁺ nanopowders have similar behavior, whereas the shape of the excitation spectra of Eu³⁺ emission from Lu₂O₃:Eu³⁺ nanopowders strongly depends on the particle size. The difference in the behavior of Lu₂O₃:Eu³⁺ and Lu₂O₃:Tb³⁺ nanophosphor systems was explained by different mechanisms of the energy transfer from the host to Eu³⁺ or Tb³⁺ ions (either the hole or electron recombination mechanism, respectively), which are differently influenced by losses of electronic excitations near the particle surface.     

Growth of the Bi2O3 thin films under atmospheric pressure by means of halide CVD

Films of Bi₂O₃ were grown on glass substrate under atmospheric pressure by means of halide chemical vapour deposition (AP-HCVD) using BiI₃ and O₂ as the starting materials. In the XRD diffractogram of the film a strong diffraction peak appears at 27.91° assigned to the (111) diffraction of the δ-Bi₂O₃ with cubic structure. X-ray pole figure suggested that the 〈111〉 direction of the film is perpendicular to the substrate surface, while the 〈110〉 axis directs towards all directions parallel to the substrate surface. It is for the first that δ-Bi₂O₃ film was prepared on glass substrate.     

Photoexpansion and photobleaching effects in oxysulfide thin films of the GeS2+Ga2O3 system

Oxysulfide systems undergo structural transformations upon illumination with laser light of near bandgap energy, as well as chalcogenide materials (glasses and films). In this paper, photoinduced effects such as photoexpansion and photobleaching were observed in GeS₂+Ga₂O₃ (GGSO) films synthesized by electron beam evaporation. A surface expansion of the thin films and a shift to shorter wavelengths of the optical absorption edge were observed as a result of UV laser irradiation (wavelength of 351 nm) and they are dependent on laser power density, exposure time and film composition. These parameters were varied to evaluate and enhance the observed effects. In addition, the irradiated GGSO samples exhibited a decrease in refractive index, measured with a prism-coupling technique, which makes these films suitable candidates for applications as gratings and waveguides in integrated optics.     

Magnetic anisotropic properties in Fe3O4 and CoFe2O4 ferrite epitaxy thin films

Epitaxial thin films of Fe₃O₄ and CoFe₂O₄ on MgO (0 0 1) substrates were grown by molecular beam epitaxy at low temperature growth process. Magnetization and hysteresis loop of both films were measured to investigate magnetic anisotropic properties at various temperatures. Anomalous magnetic properties are found to be correlated with crystalline, shape, and stress anisotropies. The Fe₃O₄ film below Verwey structural transition has a change in crystal structure, thus causing many anomalous magnetic properties. Crystalline anisotropy and anomalous magnetic properties are affected substantially by Co ions. The saturation magnetization of Co–ferrite film becomes much lower than that of Fe₃O₄ film, being very different from the bulks. It indicates that the low temperature growth process could not provide enough energy to have the lowest energy state.     

Intrinsic ultraviolet luminescence from Lu2O3, Lu2SiO5 and Lu2SiO5:Ce

Radioluminescence and thermally stimulated luminescence measurements on Lu₂O₃, Lu₂SiO₅ (LSO) and Lu₂SiO₅:Ce³⁺ (LSO:Ce) reveal the presence of intrinsic ultraviolet luminescence bands. Characteristic emission with maximum at 256 nm occurs in each specimen and is attributed to radiative recombination of self-trapped excitons. Thermal quenching of this band obeys the Mott-Seitz relation yielding quenching energies 24, 38 and 13 meV for Lu₂O₃, LSO and LSO:Ce, respectively. A second intrinsic band appears at 315 nm in LSO and LSO:Ce, and at 368 nm in Lu₂O₃. Quenching curves for these bands show an initial increase in peak intensity followed by a decrease. Similarity in spectral peak position and quenching behavior indicate that this band has a common origin in each of the samples and is attributed to radiative recombination of self-trapped holes, in agreement with previous work on similar specimens. Comparison of glow curves and emission spectra show that the lowest temperature glow peaks in each specimen are associated with thermal decay of self-trapped excitons and self-trapped holes. Interplay between the intrinsic defects and extrinsic Ce³⁺ emission in LSO:Ce is strongly indicated.     

Characterization of interface between CuInSe2 and In2O3

CuInSe₂/In₂O₃ structures were formed by depositing CuInSe₂ films by stepwise flash evaporation onto In₂O₃ films, which were grown by DC reactive sputtering of In target in presence of (Ar+O₂) gas mixture. Phase purity of the CuInSe₂ and In₂O₃ films was confirmed by Transmission Electron Microscopy (TEM) studies. X-ray diffraction (XRD) results on CuInSe₂/In₂O₃/glass structures showed sharp peaks corresponding to (112) plane of CuInSe₂ and (222) plane of In₂O_3. Rutherford Backscattering Spectrometry (RBS) investigations were carried out on CuInSe₂/In₂O₃/Si structures in order to characterize the interface between In₂O₃ and CuInSe₂. The results show that the CuInSe₂ films were near stoichoimetric and In₂O₃ films had oxygen deficient composition. CuInSe₂/In₂O₃ interface was found to include a ∼20 nm thick region consisting of copper, indium and oxygen. Also, the In₂O₃/Si interface showed the formation of ∼20 nm thick region consisting of silicon, indium and oxygen. The results are explained on the basis of diffusion/reaction taking place at the respective interfaces.