The effect of hydrogen chemisorption on GaAs(100) and GaAs(1̄1̄1̄)

The interaction of hydrogen with the polar (100) and (1̄1̄1̄) surfaces of GaAs has been studied with LEED, angle-resolved photoemission and core level spectroscopy. It was found that the properties of the hydrogen-covered surface were independent of the composition of the initial surface. The core levels also showed an increase in the surface As concentration for initially Ga-rich surfaces. Angle-resolved photoemission results for GaAs(100) and GaAs(100):H are presented and the dispersion of a hydrogen-induced state is shown.     

Composition,structure, surface states,and O2 sticking coefficient for differently prepared GaAs(1̄1̄1̄)As surfaces

The polar GaAs(1̄1̄1̄)As surface can be prepared in three stable and ordered states: two by molecular beam epitaxy (MBE), namely the As-stabilized and the Ga-stabilized states and one simply by ion bombardment and annealing at 770 K. The respective LEED structures are $\text{(2 × 2), (}\text{19}\text{×}\text{19}\text{)}\text{R}\text{23.4°}$, and (1 × 1) with a diffuse faint (3 × 3) superstructure. Auger measurements and the comparison with the stoichiometric cleaved (110) surface show that there are different As concentrations in the first atomic layer associated with each of these three surfaces. Whereas about 10 to 15% of the first As layer appears to be missing on the (2 × 2) surface, about 50% is missing on the $\text{19}$ surface. On the (1 × 1) surface the first As layer is removed completely. The intensity of emission from the surface sensitive states between 1 and 4 eV below the valence band edge, as seen by angular resolved UPS, roughly corresponds to the amount of As at the surface thus confirming their interpretation as As-derived surface states. The inital sticking coefficent for oxygen depends strongly on the surface structure: ～10^?8 for the (2 × 2), ～10^?7 for the $\text{19}$, and ～10^?4 for the (1 × 1) surface. The sticking coefficient does not depend on the surface concentration of As but rather on the degree of saturation of dangling bonds on Ga atoms.     

Iodine etching of the GaAs(1̄1̄1̄)As surface studied by LEED,AES, and mass spectroscopy

The iodine interaction with the GaAs(1̄1̄1̄)As surface prepared by molecular beam epitaxy has been studied by LEED, LEED intensity measurements, Auger electron spectroscopy (AES) and computer controlled mass spectroscopic study of the whole desorption spectrum. It is shown that an iodine beam hitting the GaAs(1̄1̄1̄)As face at 300 K under UHV conditions etches the surface continuously. After this etching there remains an adsorbate of GaI_x where x is a number between 0 and 3. By thermal desorption of this GaI_x adsorbate an As stabilized GaAs(1̄1̄1̄)As surface showing a (2 × 2) structure can be prepared, which up to the present could be done only by molecular beam epitaxy.     

A new type of reconstruction on the InSb(1̄1̄1̄) surface determined by grazing incidence X-ray diffraction

The (3×3) reconstruction of the InSb(1̄1̄1̄) surface has been investigated by grazing incidence X-ray diffraction and scanning tunneling microscopy. The structure is characterized by 6-atom rings on top of a slightly buckled InSb top double layer. Two types of rings have been found, an elliptic ring consisting of 4 In and 2 Sb atoms and a trigonal ring with 3 In and 3 Sb atoms. The bond angles and lengths are consistent with the concept of rehybridization and depolarization which explains the reconstructions of the (111) and (110) surfaces.     

Observation of extrinsic surface states on (112̄0) CdS

Surface states have been detected by surface photovoltage spectroscopy on (112̄0) CdS surfaces subjected to various treatments in UHV and studied by Auger electron spectroscopy and LEED. All surface electronic features can be related to chemical contamination or lattice nonstoichiometry. Energy level spectra of air-exposed CdS exhibit a set of discrete states due to adsorption of C, O, and Cl. Ion bombardment generates a pair of states 2.35 eV and ~0.8 eV above the valence band edge due to S interstitials and vacancies, respectively. Oxygen adsorption produces a broad continuum of states. Changes in surface atomic order show no direct effect on these electronic features. No intrinsic surface states, filled or empty, are observed by surface photovoltage spectroscopy on clean, stoichiometric (112̄0) faces of CdS.     

GaAs(001)衬底上分子束外延生长InNSb单晶薄膜

利用射频氮等离子辅助分子束外延(RF-MBE)技术在GaAs(001)衬底上生长稀氮 InNSb半导体薄膜,并通过原子力显微镜(AFM)、扫描电子显微镜(SEM)、X射线衍射仪(XRD)和拉曼散射光谱等测量手段对样品的微结构和N组分等进行了表征.结果显示样品有较好的晶体质量,N组分可高达0.84%(XRD的结果).本文还对样品的输运性质进行了表征,结果显示样品在室温下具有较低的载流子浓度和较高的迁移率.另外,初步研究表明在InSb中掺入N可导致其室温磁阻明显下降. 关键词： 分子束外延 稀氮半导体 X射线衍射 拉曼光谱     

Atomic relaxation of the BeO (101̄0) surface

The atomic relaxation of the nonpolar (101̄0) surface of BeO has been calculated by minimizing the surface energy within the framework of the ab initio Hartree-Fock method. A six-layer two-dimensionally periodic slab model was used, permitting a full symmetry-conserving relaxation of the two outer layers. The BeO surface bonds show a small rotation angle of about 4 accompanied by a large (about 10%) reduction in surface bond length. Significant contraction of backbonds and a small rotation of second layer bonds are also found. The relaxed BeO (101̄0) surface is thus predicted to be similar to the ZnO (101̄0) surface but different from the corresponding surfaces of all other II–VI compounds. Various explanations for this difference are discussed, and evidence from a bond population analysis is presented which suggests that this behavior can be described in terms of partial double bond character in the surface bonds. Since multiple bonding is related to small atomic radii, it would follow that the small radius of the oxygen atom is the ultimate cause of the type of surface relaxation we predict.     

Structure determination of the clean Co(112̄0) surface by LEED

The atomic structure of the (112&#x0304;0) surface of cobalt has been determined by LEED using six intensity spectra at normal incidence. The surface exhibits the truncated bulk structure with a contraction of the first interlayer spacing by about 8.5% with respect to the bulk value. Quantitative evaluation of the LEED spectra was done using Zanazzi and Jona's and Pendry's r-factors. The minimum averaged r-factors are $\text{r}{}_{\mathrm{<mtext>ZJ</mtext>}}\text{= 0.09}$ and $\text{r}{}_{\mathrm{<mtext>P</mtext>}}\text{= 0.22}$. No change of the interatomic distances within the plane could be detected and no rearrangement of the surface structure takes place up to temperatures shortly below the transition temperature.     

Optical properties of GaInNAs/GaAs prepared by molecular beam epitaxy

Optical properties of GaInNAs are studied with emphasis on photoluminescence (PL) and photoreflectance (PR) using GaInNAs single quantum wells (GaInNAs-SQW) and thick GaInNAs layers lattice-matched to GaAs (LM-GaInNAs) grown by solid-source molecular-beam epitaxy. First, a blue-shift of band-gap energy as a result of a rapid thermal annealing (RTA) has been confirmed by both PL and PR. Temperature-dependent PL and PR spectra were measured. At low temperature, GaInNAs-SQWs exhibited a PL due to the localized exciton (LE), and the localization was strongly reduced by RTA. A very high-quality GaInNAs-SQW exhibited very intense PL with small half-width (10–20 meV for 8–300 K) without LE emission. In LM-GaInNAs, low-temperature PL exhibited both the LE emission and a deep PL band. Temperature-dependent PL showed that LM-GaInNAs contains large number of non-radiative centers. PR spectra of LM-GaInNAs were composed of more than two transitions, and their relative intensity depended on temperature and annealing.     

Surface core level shift on Be( 112&#x0304;0)

A photoemission study of the Be(112&#x0304;0) surface carried out at a sample temperature of 100 K is reported. A surface shifted Be 1s component, having a shift of - 410 meV, is resolved on this surface. The extracted surface to bulk intensity ratio indicate that this component originates from atoms in the surface layer only. This is opposite to previous observations on both the close-packed Be(0001) surface and the Be(101&#x0304;0) surface where sub-surface shifted Be 1s levels were unambiguously identified. Among these three surfaces a surface layer atom is expected to have the lowest coordination on the (112&#x0304;0) surface but the surface layer shift is found to be smallest on this surface. Compared to findings on other metals this is unusual and reasons contributing to this behaviour are suggested and discussed.     

The decomposition of formic acid on Ru(101&#x0304;0)

The decomposition of formic acid was studied on a clean Ru(101&#x0304;0) surface adsorption temperature between 100 and 460 K by means of flash thermal desorption. The decomposition products observed were H₂, CO₂, H₂O and CO. HCOOH itself was also desorbed, although at low exposures no formic acid was observed. The H₂ and CO₂ products were desorbed in identical first order peaks, with a peak temperature of 395 K. The H₂O product desorbed in a second order peak at 813 K, in contrast to H₂O desorption from low coverage H₂O adsorption which occurs in two peaks in the region of 220 and 265 K. The CO product desorbed in a first order peak at 488 K, identical to CO from CO adsorption. The dependence of the product peaks on adsorption temperature of the Ru surface was also studied. These results suggest a model involving the formation and decomposition of a surface intermediate species.     

Self-assembly of InAs quantum dots on GaAs(001)by molecular beam epitaxy

Currently, the nature of self-assembly of three-dimensional epitaxial islands or quantum dots (QDs) in a lattice-mismatched heteroepitaxial growth system, such as InAs/GaAs(001) and Ge/Si(001) as fabricated by molecular beam epitaxy (MBE), is still puzzling. The purpose of this article is to discuss how the self-assembly of InAs QDs in MBE InAs/GaAs(001) should be properly understood in atomic scale. First, the conventional kinetic theories that have traditionally been used to interpret QD self-assembly in heteroepitaxial growth with a significant lattice mismatch are reviewed briefly by examining the literature of the past two decades. Second, based on their own experimental data, the authors point out that InAs QD self-assembly can proceed in distinctly different kinetic ways depending on the growth conditions and so cannot be framed within a universal kinetic theory, and, furthermore, that the process may be transient, or the time required for a QD to grow to maturity may be significantly short, which is obviously inconsistent with conventional kinetic theories. Third, the authors point out that, in all of these conventional theories, two well-established experimental observations have been overlooked: i) A large number of “floating” indium atoms are present on the growing surface in MBE InAs/GaAs(001); ii) an elastically strained InAs film on the GaAs(001) substrate should be mechanically unstable. These two well-established experimental facts may be highly relevant and should be taken into account in interpreting InAs QD formation. Finally, the authors speculate that the formation of an InAs QD is more likely to be a collective event involving a large number of both indium and arsenic atoms simultaneously or, alternatively, a morphological/structural transformation in which a single atomic InAs sheet is transformed into a three-dimensional InAs island, accompanied by the rehybridization from the sp²-bonded to sp³- bonded atomic configuration of both indium and arsenic elements in the heteroepitaxial growth system.     

Angular resolved photoemission from intrinsic surface states on Al (100)

Using photon energies of 11.7, 16.8 and 21.2 eV, we have recorded angular resolved photoemission spectra from clean Al (100). A dominant, surface sensitive peak is interpreted as emission from a two-dimensional band of surface states. The band mass is $\text{m}{}^1\text{=(1.03±0.10)m}$, and the band minimum, (2.8±0.2) eV below E_F for surface momentum k₆=0, is located within the bulk band gap. The observed existence of the peak for large values of k₆, indicates a transition from a true surface state to a surface resonance.     

The reactivity of the clean and contaminated (0001&#x0304;) polar and the (101&#x0304;0) prism ZnO surfaces to chlorine

The reactivities of the (0001&#x0304;) and (101&#x0304;O) surfaces of zinc oxide to chlorine gas have been studied by a range of techniques. In the case of the (0001&#x0304;) oxygen polar surface investigations were made with the surface both atomically clean and with a known level of carbon and calcium contamination. Comparison is made with our earlier results on the (0001) surface which showed a high level of reactivity due to the increased electrostatic stability on adsorption of the electronegative gas. Both the oxygen polar and the prism surface showed a much lower reactivity to chlorine than the zinc face: contamination by carbon and calcium on the former surface reduced the reactivities still further. This result conflicts with comparable data for oxygen adsorption where previous work has shown a greater take-up of oxygen on the oxygen face than the zinc face. Unlike the zinc face, no LEED superstructures were observed on any of, the three surfaces, but in common with the (0001) there were significant electron beam desorption effects. Two states could be identified: one was rapidly removed in ~10 μA min exposure to the beam, the other in much longer periods. Work function and ELS data were consistent with atomic adsorption of chlorine on all surfaces. An exception was the (101&#x0304;O) at high exposures where a work function decrease took place following the initial increase: this may indicate a second molecular state.     

The orientation of formate and carbonate on ZnO(101&#x0304;0)

Polarisation dependent CK-edge NEXAFS spectra of carbonate and formate species on ZnO(101&#x0304;0) indicate that both species are aligned by the substrate. The carbonate species, formed by adsorption of CO₂, is oriented with its molecular plane close to the [0001] azimuth. This suggests a bond geometry in which one O atom of CO²⁻₃ is in the substrate, and a second interacts with a surface cation, consistent with the results of previous cluster calculations. In contrast, the formate species, formed by adsorption of formic acid, is not azimuthally ordered, although the molecular rotation axis is aligned close to the surface normal, consistent with bidentate bonding to a single cation.     

X-ray photoelectron spectroscopy study of GaAs (001) surface thermocleaning prior to molecular beam epitaxy

X-ray photoelectron spectroscopy has been performed in order to investigate the encapsulent effect of an oxide layer, grown at the end of the chemical etching procedure, on the annealing behaviour of GaAs (001) substrates prior to M.B.E. growth. The oxide layer makes the surface unable to react with arsenic molecules until the desorption of the gallium oxide around 570 °C, preventing the surface against arsenic desorption below this temperature. Otherwise, if unoxidized substrates are used, annealing must be performed under an arsenic flux from 150 °C upwards to avoid the formation of an arsenic depleted surface.     

Photoemission from valence bands of GaAs(001) grown by molecular beam epitaxy

Angle-resolved photoemission measurements for GaAs(001) prepared by MBE have been carried out using synchroton radiation. Observed bulk features in the spectra can be explained by a direct transition model using free-electron-like final states down to energies as low as 16 eV above the top of the valence bands. Spectral bulk valence band features can be distinguished from surface features by an appropriate choice of photon energies and polar angles. This is demonstrated using calculated valence bands.     

Characterization of InGaGdN layers prepared by molecular beam epitaxy

Gd‐doped InGaN layers were prepared by plasma‐assisted molecular‐beam epitaxy in search of new functional diluted magnetic semiconductors for their potential use in spintronics. The local structure around the Gd atoms was examined by the Gd L_III‐edge of X‐ray absorption fine structure. It was found that the majority of Gd atoms substitutionally occupied the cation sites in the InGaGdN layers. Clear hysteresis and saturation magnetization were observed from the magnetization versus field curves examined by means of a superconducting quantum interference device magnetometer at low and room temperatures. In addition, the incorporation of extra shallow donors by co‐doping InGaN with both Gd and Si showed higher magnetization than the undoped InGaGdN. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Photoluminescence of HgCdTe nanostructures grown by molecular beam epitaxy on GaAs

Photoluminescence (PL) of HgCdTe-based hetero-epitaxial nanostructures with 50 to 1100 nm-wide potential wells was studied. The nanostructures were grown by molecular beam epitaxy on GaAs substrates. A strong degree of alloy disorder was found in the material, which led to the broadening of the PL spectra and a considerable Stokes shift that could be traced up to temperature T～230 K. Annealing of the structures improved the ordering and led to the increase in the PL intensity. A remarkable feature of the PL was an unexpectedly small decrease of its intensity with temperature increasing from 84 to 300 K. This effect can be related to localization of carriers at potential fluctuations and to the specific character of Auger-type processes in HgCdTe-based nanostructures.     

Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates

The Hall effect and photoluminescence measurements combined with annealing and/or ion milling were used to study the electrical and optical properties of HgCdTe films grown by molecular-beam epitaxy on GaAs substrates with ZnTe and CdTe buffer layers. Unintentional donor doping, likely from the substrate, which resulted in residual donor concentration of the order of 10¹⁵ cm^?3, was observed in the films. Also, acceptor states, possibly related to structural defects, were observed.