Ferromagnetism in epitaxial layers of gallium and indium antimonides and indium arsenide supersaturated by manganese impurity

We report on laser synthesis of thin 30–200 nm epitaxial layers with mosaic structure of diluted magnetic semiconductors GaSb:Mn and InSb:Mn with the Curie temperature T_C above 500 K and of InAs:Mn with T_C no less than 77 K. The concentration of Mn was ranged from 0.02 to 0.15. In the case of InSb:Mn and InAs:Mn films, the additional pulse laser annealing was needed to achieve ferromagnetic behavior. We used Kerr and Hall effects methods as well as ferromagnetic resonance (FMR) spectroscopy to study magnetic properties of the samples. The anisotropy FMR was observed for both layers of GaSb:Mn and InSb:Mn up to 500 K but it takes place with different temperature dependencies of absorption spectra peaks. The resonance field value and amplitude of FMR signal on the temperature is monotonically decreased with the temperature increase for InSb:Mn. In the case of GaSb:Mn, this dependence is not monotonic.     

Growth of gallium nitride epitaxial layers and applications

The lack of appropriate substrates has delayed the realisation of devices based on IIInitrides. Currently, the heteroepitaxial growth of GaN by metal organic vapour phase epitaxy (MOVPE) produces GaN layers which, despite huge densities of dislocations, allow the fabrication of highly efficient optoelectronic devices. Henceforth, a new technology in heteroepitaxy of GaN, the epitaxial lateral overgrowth (ELO) has produced GaN layers in which the density of dislocations has been reduced by several orders of magnitude. With the ELO, nitride based laser diodes (LDs) working at room temperature in cw mode with a lifetime of 10,000 hours have been demonstrated by Nichia. In addition to LDs, IIInitrides presently offer a wide range of applications in optoelectronics (high brightness light emitting diodes (LEDs), from amber to UV, solar blind detectors); in electronics, high temperature/high power field effect transistors (FETs). The development of molecular beam epitaxy (MBE) of nitrides has been hindered during several years by the lack of an efficient nitrogen source. This problem being solved, MBE has recently demonstrated state-of-theart quantum well and quantum dot heterostructures, and 2D electron gas heterostructures.     

Growth and properties of epitaxial iron oxide layers

Epitaxial layers of iron oxides have been grown on a MgO(001) substrate by evaporating natural Fe or⁵⁷Fe from Knudsen cells in the presence of a NO₂ flow directed to the substrate. The resulting layers have been investigated in situ with LEED, RHEED, AES and XPS and ex situ with CEMS and ion beam analysis. For substrate temperatures between 200 and 400°C we observe RHEED oscillations during deposition, indicative of layer-by-layer growth. By adjusting the flux of NO₂ at the surface, all stable and metastable cubic phases in the Fe-O system could be grown: FeO (wustite), Fe₃O₄ (magnetite), -Fe₂O₃ (maghemite) and solid solutions between the latter two phases. Rutherford backscattering spectra show a relatively high minimum yield in the channel directions.     

Growth kinetics of epitaxial layers of gallium phosphide by temperature-gradient zone recrystallization

A study is made of the dependence of the growth rate of epitaxial layers of gallium phosphide under conditions of temperature-gradient zone recrystallizatton on the thickness of the zone and the temperature. The coefficient of diffusion of phosphorus into gallium is calculated, and also the rate of change of the phosphorus concentration in the zone due to vaporization, the activation energies of the diffusion and vaporization processes, and also the atomickinetic coefficients of the crystallization process.     

Annealing effects on the microstructure of sputtered gold layers on oxidized silicon investigated by scanning electron microscopy and scanning probe microscopy

The structure of Au layers deposited by sputtering on oxidized p-type Si(100) substrates is investigated by a combination of scanning electron microscopy and scanning probe microscopy. The effect of the temperature on the grain structure of the layers has been determined, revealing that an annealing temperature of 300° C results in a larger grain size and smoother surfaces but generates some cracks in the film surface. At an annealing temperature of 500° C, further grain growth is observed, but a high density of cracks and voids also results while there is little enhancement regarding the smoothness of the grain surfaces.     

Magnetic properties of thin epitaxial films investigated by spin-polarized photoemission

The surface sensitivity of the spin-polarized photoemission experiment was exploited to study two-dimensional magnetism. The magnetization of thin films of Fe, Co, and V in the monolayer (ML) range, grown on Cu(001) and Ag(001) single crystals, was measured as a function of perpendicularly applied field and temperature. Bcc Fe films and fcc Fe and Co films exhibit ferromagnetism down to the single monolayer range, while no evidence for ferromagnetism is found for V on Ag(001). All Co films are magnetized in plane and have a Curie temperature far above room temperature. A thickness dependence of the anisotropy and Curie temperature is observed for the two phases of Fe. Remanent magnetization perpendicular to the surface is found at 30 K for fcc Fe films thicker than 2 ML and for bcc Fe between 3 and 4 ML. The magnetic effects caused by coating and by interdiffusion are discussed in the light of measurements of Cu/Fe/Cu sandwiches and of overlayers obtained by simultaneous evaporation of Fe and Cu. The fcc Fe films are shown to be suitable for thermomagnetic writing.     

Surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition

Surface termination and electronic properties of InN layers grown by high pressure chemical vapor deposition have been studied by high resolution electron energy loss spectroscopy (HREELS). HREEL spectra from InN after atomic hydrogen cleaning show N-H termination with no indium overlayer or droplets and indicate that the layer is N-polar. Broad conduction band plasmon excitations are observed centered at 3400 cm⁻¹ in HREEL spectra with 7 eV incident electron energy which shift to 3100 cm⁻¹ when the incident electron energies are 25 eV or greater. The shift of the plasmon excitations to lower energy when electrons with larger penetration depths are used is due to a higher charge density on the surface compared with the bulk, that is, a surface electron accumulation. These results indicate that surface electron accumulation on InN does not require excess indium or In-In bonds.     

Structural properties of GaN(0001) epitaxial layers revealed by high resolution X-ray diffraction

High-resolution X-ray diffraction has been used to analyze GaN(0001) epitaxial layers on sapphire substrates. Several structural properties of GaN, including the lattice constants, strains, and dislocation densities are revealed by the technique of X-ray dffraction (XRD). Lattice constants calculated from the omega/2theta scan are c=0.5185 nm and a=0.3157 nm. Also, the in-plane strain is -1.003%, while out of the plane, the epitaxial film is almost relaxed. Several methods are used to deduce the mosaicity a...     

Low-density dislocation arrays at heteroepitaxial Ge/GaAs-interfaces investigated by high voltage electron microscopy

High-voltage electron microscopy in combination with a large-area thinning technique has been applied to thin epitaxial Ge layers on GaAs substrates. These layers exhibit 60° misfit dislocations along the 〈110〉 directions parallel to the interface. Various dislocation reactions are evaluated from the electron micrographs, e.g. the formation of non-glissile 90° dislocations from two nearly parallel 60° dislocations and the annihilation reaction of two crossing 60° dislocations with identical Burgers vectors. The latter reaction occasionally leads to a dislocation multiplication. The misfit dislocations in very thin layers (～0.5 μm thickness and a linear dislocation density of less than 100 dislocation lines/cm) tend to be arranged in groups rather than being equidistant. Consequences for the interpretation of x-ray topograms are discussed.     

Study of microstructured indium oxide by cathodoluminescence and XPS microscopy

In this work sintered thick microcrystalline films as well as micro and nanostructures of In₂O₃ have been studied. The results obtained by XPS microscopy show that the boundary regions of the microcrystalline films present a higher amount of oxygen, as well as a different O (1s) core level XPS spectrum with respect to the grains. CL images recorded at room temperature show that the emission is preferentially associated with the grain boundaries and the main emission band appeared at 1.9 eV in the recorded CL spectra.Core level and valence band spectromicroscopy measurements of the indium oxide arrows grown at the surface of the sintered InN revealed the incorporation of nitrogen, coming from the starting material. In these structures the N (1s) core level splits into two components, showing a higher amount of nitrogen in the pyramid surface than in the columns of the structures which correlates with an increase of CL intensity.     

Photoconductive response of GaAs epitaxial layers

In the present work the photoconductive response of low resistivity, n-type GaAs epitaxial layers is studied by experimentally monitoring the dependence of the photoconductive gain (PG) optoelectronic parameter upon incident photon flux and temperature. The characterized samples fall into three major categories: ion implanted (II) GaAs epilayers formed within undoped, semi-insulating GaAs substrates; GaAs epitaxial layers grown by liquid phase epitaxy (LPE) on Cr-doped, semi-insulating GaAs substrates; and ungated GaAs MESFETs.     

Elastic strain determination in semiconductor epitaxial layers by HREM

A new technique that is independent of image contrast and robust to the presence of experimental noise is presented to analyze strains from high resolution electron microscopy (HREM) lattice images. This approach involves the analysis of the cumulative sum of deviations (CUSUM) in lattice-fringe spacings from a target value. The effects of surface roughness at an interface, and surface relaxation due to transmission electron microscope (TEM) sample preparation are discussed. The CUSUM method was applied to two simulated and two experimental HREM images of semiconductor strained layer structures in [ ] zone axis projection. The CUSUM technique was able to accurately reproduce the strain profiles from the simulated and experimental images in all cases studied except for the component of the strain in the slip direction (e_xx) of an edge dislocation in a simulated image. In this case, the strain field near the core appeared hemispherical rather than lobed as expected.     

Investigation of 4H-SiC epitaxial layers implanted by Al ions

4H-SiC epitaxial layers 26 μm thick with N _d ?N _a = 1 × 10¹⁵ cm^?3 grown by the CVD method on 4H-SiC commercial wafers were implanted by Al ions with energy of 100 keV and a dose of 5 × 10¹⁶ cm^?2. To produce the p ⁺?n junction, a rapid thermal annealing for 15 s at 1700°C was used. The obtained samples were studied by the local cathodoluminescence, X-ray diffractometry, and transmission electron microscopy. It was established that under specified conditions of implantation, the width of a region with a high content of radiation defects exceeded by two orders of magnitude, the depth of the projective range of Al ions and was equal to 40 μm. This result is explained by the combined contribution of the radiation enhanced defect diffusion and long-range action effect. A short-term high-temperature annealing resulted in the recrystallization of the specimen surface layer and enhancement of CVD layer structure.     

Growth of GaN epitaxial layers on sapphire with preheated ammonia and their structural and optoelectronic properties

GaN epitaxial layers were grown by metalorganic chemical vapor deposition with preheated ammonia as a group V source. The growth rates of GaN epilayers were little affected when ammonia preheater temperature was varied from room temperature to 1000 °C, however, their electrical properties as well as source materials utilization efficiency was significantly improved by using preheated ammonia. GaN epilayers grown with preheated ammonia showed excellent structural and optical properties.     

EBIC investigations of GaN layers prepared by epitaxial lateral overgrowth

GaN films prepared by lateral overgrowth are investigated by scanning electron microscopy in the electron beam induced current (EBIC) mode. A comparison of experimental and simulated dependences of induced current on beam energy has allowed us to determine not only the diffusion length, but also the donor concentration in different areas of a film. It has been found that the donor distribution is inhomogeneous and this inhomogeneity increases under fast neutron irradiation. This is indicative of the significant influence of structural defects on the rate of radiation defect accumulation. An anomalously slow signal decay outside the Schottky barrier has been found, which can be determined by charged defects formed at the merger boundary.     

Resolution in high field echo planar microscopy

The application of echo planar imaging to NMR microscopy offers a temporal resolution unparalleled by other techniques. However, a major difficulty in imaging at the high field strengths used for microscopy is the effect of local field inhomogeneities caused by magnetic susceptibility effects. This can give rise to both image distortion and signal loss. In addition, the effect of diffusion in the presence of the large imaging gradients gives rise to a broadening of the point spread function and hence loss of true resolution. We compare the sensitivity of two techniques, MBEST and PEPI, to both of these effects. Analytic expressions for the signal in each echo of the two sequences are developed, and the point spread functions for the two techniques are calculated. Using PEPI, we have been able to produce images with an in-plane resolution of 50 micrometer from a single free induction decay. This technique has been extended to three dimensions allowing the generation of 64(3) images with an isotropic resolution of 80 micrometer.