High resolution Ne KLL Auger spectra produced by H+ and He+ bombardment

Ne KLL Auger satellite lines are measured with an energy resolution of 0.02% FWHM. The relative intensities of initial 2p vacancy satellite lines are observed to be four times larger with He⁺ than with H⁺ bombardment. The He⁺ beam also produces new satellite lines which are assigned to double initial 2p vacancies.     

Auger electron emission by ion bombardment of light metals

The energy distribution of secondary electrons ejected from a metallic target upon ion bombardment (Ar⁺, 10 keV) is studied with a 180° magnetic analyser, particularly in the vicinity of the Auger peaks that appear in the electron spectra of the light metals (Li, Be; Na, Mg, Al, Si). A qualitative explanation based on the correlation diagrams which described the evolution of the electronic levels during the collision of two atoms inside the target is proposed to interpret the variation of the Auger peak intensity with the atomic number of the target.     

Effect of ion bombardment at low energy on (100)InP surfaces,studied by Auger electron spectroscopy

Surface cleaning of (100)InP substrates with an Ar⁺ ion beam of 250–400 eV is analysed by AES and shown as a function of time. The results obtained show the possibility of removing the contamination layer without any significant chemical damage to the InP surface.     

Auger electron spectroscopy of silicon surfaces

The measurements of the spectra of Auger electrons of the silicon surfaces performed at the pressure of (2–5)×10^?7 Torr are described. In this pressure range rapid oxidation and carbonization of the uppermost layers take place. The changes of characteristic energies in Auger and loss spectra are related to the change of chemical composition of the surface. The combination of the characteristic loss spectroscopy with Auger electron spectroscopy makes possible the determination of the chemical shifts. The measurements of the chemical shifts of the individual energy levels of the silicon atoms in both the pure and contaminated silicon surfaces, in quartz and Fe∶Si alloy are given. Finally, the possibilities and limitations of the heating for the silicon surface cleaning are examined.     

Are neutral sodium atoms produced on glass surfaces by electron bombardment?

Recent papers have speculated that neutral sodium atoms are produced in significant quantities in glass by electron bombardment. XPS measurements on an electron-bombarded soda lime silicate glass revealed no evidence for neutral atoms at the surface or at depths up to the maximum penetration of the electron beam.     

Resonant Auger decay in the L2,3-MM spectrum of Ar excited by electron bombardment

The L_2,3-MM Auger spectrum of argon was measured using electron beam excitation. A weak structure on the high energy side of the main transitions was identified as corresponding to the resonant Auger transitions by comparing these spectral structures with individual resonant Auger spectra excited by monochromatic synchrotron radiation.     

Production of Na Auger electrons by Na+ bombardment of Ag surface

In this paper it has been shown that for the La₂₃MM emission of Na Auger electrons in the case of low enregy Na⁺ ion interaction with the Ag surface contaminated with Na, symmetric collisions (Na → Na) are responsible.     

Enhancement of radiative electron rearrangement in Si by He+ bombardment

The first multiple ionization peak in the radiative electron rearrangement (RER) satellite sequence shows an order of magnitude enhancement relative to Kα_1,2 radiation in He⁺ induced spectra compared to H⁺ or e^? induced X-ray spectra of Si. This enhancement supports the RER model which requires that the rearrangement decay increases proportionally with the first Kα_1,2 satellite decay.     

Hydrogen adsorption on silicon (1 1 1) surfaces studied by Auger electron spectroscopy

The adsorption of atomic hydrogen on the (1 1 1) planes of silicon single crystals is studied by Auger Electron Analysis, using the decrease of the silicon Auger peak heigh as a measure of the hydrogen coverage. The zero coverage sticking coefficient is found to be 3 × 10^?4.     

Auger electron spectroscopy - a local probe for solid surfaces

The Auger electron transition in solids is discussed under the aspect of a local excitation due to the strongly localized primary hole in an inner atomic core level. In first approximation the solid is represented by a cluster model, consisting of the excited atom and its neighbors. Using this simple model it is possible to describe the Auger electron energies, intensities and line shapes of transitions in solids in a satisfactory way. Only for the angular dependent Auger emission, characteristic long-range crystalline order has to be taken into account. It is the aim of this introductory review to point out that Auger spectra bear more information about the solid surface and particularly on its chemical bonds as has yet been exploited by surface spectroscopists.     

Auger spectra of aluminium and magnesium induced by caesium-ion bombardment

A caesium ion beam has been used to excite electron emission from Mg, Al, AlAs and GaAs. The portions of the electron emission spectra that result from Auger transitions are compared with previously reported spectra generated with different primary ion beams. It is observed that 10 keV Cs⁺-ion bombardment produces very few excited ions with two 2p vacancies. Evidence for two atomic-like peaks discussed by previous authors, but not unambiguously identified, is also presented.     

Phase composition diagnostics of surfaces,thin films,and interfaces by Auger electron spectroscopy

The methods of phase composition diagnostics of materials by Auger spectra, developed in IMT RAS over a number of years, are presented. Examples of their use are generally in the determination of phase depth profiles. However, the considered methods can be also used for the composition diagnostics of small size objects (nanostructures) under conditions of significant noisiness of the Auger spectra and when the studied objects probably leave an analyzed region.