Influence of γ irradiation on the optical and mechanical properties of langasite

The optical (transmission and circular dichroism) spectra and mechanical (Vickers microhardness and fracture toughness K _1c ) properties of langasite La₃Ga₅SiO₁₄ crystals have been studied after γ irradiation and exposure for a month. It is shown that, as a result of irradiation crystals become more transparent in the range 310–640 nm, nonstructural defects with the energies of excited states in the range 2.06–4.13 eV decay and new structural defects with the excited-state energies in the range 4.14–5.00 eV are formed. Irradiation does not lead to a change in microhardness, while the coefficient K _1c increases from 0.32 to 0.36 MPa m^1/2.     

Effect of germanium on the microstructure and the magnetic properties of Fe–B–Si amorphous alloys

In this work, we present a systematic study on the crystallization kinetics and the magnetic properties of melt-spun Fe₈₀B₁₀Si_10 ? xGe_x (x = 0.0 ? 10.0) amorphous alloys. The activation energy for crystallization, determined by differential scanning calorimetry, displayed a strong dependence on the Ge content, reflecting a deleterious effect on the alloys' thermal stability and their glass forming ability with increasing Ge concentration. On the other hand, the alloys exhibited excellent soft magnetic properties, i.e., high saturation magnetization values (around 1.60 T), alongside Curie temperatures of up to 600 K. Complementary, for increasing Ge substitution, the ferromagnetic resonance spectra showed a microstructural evolution comprising at least two different magnetic phases corresponding to a majority amorphous matrix and to Fe(Si, Ge) nanocrystallites for x ≥ 7.5.     

Effects of the Li-evaporation on the Czochralski growth of γ-LiAlO2

Two-inch-diameter γ-LiAlO₂ single crystals were grown from the melt by Czochralski method. The crystals were examined by optical methods, high-resolution X-ray diffraction and transmission electron microscopy (TEM). Inductively coupled plasma optical emission spectrometry (ICP-OES) was used to determine the Li/Al ratio in the residual melts. The Li-evaporation from both melt and grown crystal is the main problem in the γ-LiAlO₂ growth and has to be controlled by acting on the vertical temperature gradient. Shallow gradients increase the Li-evaporation from the crystal surface resulting in boules with a milky rim. On the other hand, steep gradients may induce cracks in the boule and enhance the Li₂O escape from melt with consequent variation of the composition. ICP-OES investigations reveal that melt compositions can vary in the range from 46.5 to 50 mol% Li₂O to obtain transparent LiAlO₂ crystals. Beyond this value, the formation of inclusions inside the crystals is probable. We have established an optimized growth assembly, which allows remaining the melt composition stoichiometric. The as-grown crystals exhibit defects like subgrains, twins and a core of voids and fine-grained inclusions. The latter could be characterized by TEM as submicron LiAl₅O₈ crystallites.     

Effect of the Ile222Thr Missense Mutation in SsoIF2γ on the Affinity of γ and β Subunits of aIF2

Crystallography Reports - Translation initiation factors 2 from eukaryotes (eIF2) and archaea (аIF2) mediate the delivery of charged initiator tRNA (Met-tRNAiMet) to the small ribosomal...     

Electron effects of the substituents on the structure of 4,4′-dipyridylium dications

The crystal structure of N,N′-di(2-hydroxyethyl)-4,4′-dipyridylium diperchlorate C₁₄H₁₈Cl₂N₂O₁₀ is determined by X-ray diffraction at 293 K. The crystals are monoclinic, a = 6.446(1) Å, b = 14.479(3) Å, c = 9.912(1) Å, β = 99.24(2)°, space group P2₁/c, and Z = 2; 1562 reflections measured; and wR2 = 0.086 and R1 = 0.033 for 1209 reflections with F > 4σ(F). It is found that, in the absence of charge transfer from the counterion to the dication, the planarity of the dipyridylium skeleton of the molecule is primarily due to the conjugation between the lone electron pairs of the hydroxyl groups and the π system of the dication. This inference is supported by the intramolecular O?N contact (2.847 Å).     

Spectroscopic properties and ab initio calculations on the structure of erbium–zinc-borate glasses and glass ceramics

Glasses in the (Er₂O₃)_x·(B₂O₃)_(60 ? x)·(ZnO)₄₀ system (0 ≤ x ≤ 15 mol%) have been prepared by the melt quenching technique. X-ray diffraction, FTIR spectroscopy, UV-VIS spectroscopy and ab initio calculations studies have been employed to study the role of Er₂O₃ content on the structure of the investigated glass system.X-ray diffraction and infrared spectra of the glasses reveal that the B–O–B bonds may be broken with the creation of new non-bridging oxygen ions facilitating the formation of Er–O–B linkages. The excess of oxygen can be accommodated in the network by the conversion of sp² planar [BO₃] units to the more stable sp³ [BO₄] tetrahedral structural units. The linkages of the [BO₄] structural units can polymerize in [B₃O₉]^? 9 cyclic trimeric ions which will produce the ErBO₃ crystalline phase. An increase of the efficiency corresponding to the ⁴I_15/2 state to ⁴I_11/2 state (4f–4f) transitions of Er^+ 3 ions was observed for the erbium oxide richest glasses.Ab initio calculations on the structure of the matrix network show the thermodynamic instability of the [BO₄], [ZnO₄] and [Zn₄O] structural units. Formation of three-coordination oxygens was necessary to compensate shortage of oxygens from zinc ions.     

The effects of annealing and rate of deposition on the electrical,optical and structural properties of amorphous GeSi alloy films

The electrical, optical and structural properties of rf-sputtered amorphous GeSi alloy films have been investigated as functions of the rate of deposition between 90 and 360 Å min^?1, and various annealing conditions. The stabilization evidenced in the electrical conductivity, optical absorption and density of these films deposited at higher rates and/or annealing temperatures may be explained in terms of the reduction of imperfections in the as-deposited films.     

FTIR and UV–VIS spectroscopy investigations on the structure of the europium–lead–tellurate glasses

Glasses in the xEu₂O₃·(100-x)[4TeO₂·PbO₂] system where 0 ≤ x ≤ 50 mol% have been prepared using the melt quenching method. The influence of europium ions on the structure of lead–tellurate glasses has been investigated using density measurements, FTIR and UV–VIS spectroscopy. Structural changes produced by increasing the rare earth concentration were followed.The europium and lead ions show a preference towards [TeO₃] structural units causing a deformation of the TeOTe linkages. Structural changes inferred by analyzing the band shapes of IR spectra revealed that the increase of the Eu^+ 3 content causes the intercalation of [EuO_n] entities in the [TeO₄] chain network. The excess of oxygen can be supported into the glass network by the formation of [PbO_n] and [EuO_n] structural units.The UV–VIS spectroscopy data show that europium ions enter the glass matrix in the Eu²⁺ and Eu³⁺ valence states, the last being predominant in the studied glasses. The Pb^+ 2 ions produce strong absorption in the ultraviolet domain.     

Dependences of the crystallization behavior of Al–Ni–La amorphous alloys on La and Ni contents

Crystallization behaviors of Al–Ni–La amorphous alloys with a fixed Ni (La) content of 6 at.% were investigated by X-ray diffraction and differential scanning calorimeter when the La (Ni) content changes from 3 to 9 at.%. The results show that the thermal stability of the amorphous alloys monotonically increases with increasing the La (Ni) content. Glass transition only exists in the alloys with the La (Ni) content higher than 6 at.%. La plays a more significant role than Ni in promoting the glass-forming ability, improving the thermal stability, stabilizing the supercooled liquid region, depressing the precipitation of fcc-Al in the first crystallization process and increasing the apparent activation energy of the first reaction.     

Investigation of the Mechanism of Influence of Stress Corrosion on the Development of Macroplastic Instabilities of Aluminum–Magnesium Alloy

Crystallography Reports - Macroscopic jumps of plastic deformation (few percent in amplitude) on creep curves of aluminum–magnesium alloy, caused by a local effect of concentrated solution of...     

Glass formation and properties of chalcogenide systems (XXII) the phase diagram of the system PbSe?GeSe2 and on the compound Pb2GeSe4

The phase diagram of the system PbSe GeSe₂ is studied by X-ray analysis and DTA. Pb₂GeSe₄ is the only compound which is formed in the system. It melts incongruently at 590 ± 4°C. The formation of Pb₂GeSe₄ as a definite compound is supported by studying the phase relations in the corresponding area of the ternary system PbSe GeSe GeSe₂.     

Influence of Changes in Central Core on the Mesomorphic Properties of 4,4′-Dialkoxy-2,2′-Dihydroxybenzalazine and Derivatives

Two new series of compounds that have mesomorphic properties were synthesized: the 4,4′-dialkoxy-2,2′-dihydroxy-a-methylbenzalazines and the 4,4′-dialkoxy-2,2′-dihy-droxybenzalazines. The first series shows crystalline and smectic polymorphism.

A comparative study of the mesomorphic properties of these series with those of the 4,4′-dialkoxy-2,2′-dihydroxy-α,α'-dimethylbenzalazines was carried out to establish the influence of the central groups on the mesomorphic properties.     

The influence of the Mg content and the quenching conditions on the decomposition kinetics of Al?Zn?Mg alloys

By means of resistivity measurements, TEM and microhardness measurements the decomposition kinetics of A1-3 at.% Zn-1.5 at.% Mg and A1-4.5 at.% Zn-x at.% Mg (x = 0.2; 0.5; 1.0; 1.5; 2.25; 3.0) were investigated. For T_a < T_{a, crit} < T_h (T_h: temperature of the rapid homogenous nucleation) in A1-3 at.% Zn-1.5 at.% Mg and A1-4.5 at.% Zn-x at.% Mg (x = 1.0; 1.5; 2.25; 3.0) an inversion of the decomposition kinetics for T_q > T_inv: (T_inv: inversion temperature) was established. This result can be explained with reference to the binding of excess vacancies in dislocation loops. Proceeding from the discrepancy between the experimentally estimated concentrations of vacancies bound in dislocation loops and the concentrations of free vacancies at T_q, calculated by means of the Lomer equation, a model is proposed, which explains the high vacancy concentration of the loops. In terms of this model the values of the migration energy, obtained for A1-3 at.% Zn — 1.5 at.% Mg in the T_a-range 23 °C ≦ T_a ≦ 100 °C, and the shift of the inversion temperatures T_inv towards higher values with increasing T_a are interpreted. The same applies to the influence of the Mg content on the decomposition kinetics in A1-4.5 at.% Zn-x at.% Mg alloys.     

Morphology prediction of crystals grown in the presence of impurities and solvents — An evaluation of the state of the art

Computational methods enable to calculate relative face growth rates and crystal shape from structural information alone. Even if these models are sufficient for the calculation of the habit of a vapor grown crystal, most of them fail to correctly reproduce the habit of crystal growth from solution. In recent years, new approaches have been proposed based on the substitution of additive molecules in the crystal lattice or on the surface of the crystal. The new computer-based approaches provide a fundamental understanding of processes of crystal growth from solution. The number of methods proposed in morphology prediction is enormous. Herein, an overview of these methods and approaches is provided.     

Dependence of the surface topology and raman scattering spectra of Ge x Si1−x /Si films on the composition variation over the layer thickness

The surface topology and Raman scattering spectra of Ge _x Si_{1 ? x} /Si(100) films are investigated in dependence of the composition variation over the film thickness. It is shown that the character of the Ge content variation in the Ge _x Si_{1 ? x} alloy at the constant cumulative Ge fraction in the film (x _int = 0.5) affects the surface morphology of the grown Ge _x Si_{1 ? x} /Si layer. The heterostructures were grown by molecular-beam epitaxy.     

Effects of Zn addition on the improvement of glass forming ability and plasticity of Mg–Cu–Tb bulk metallic glasses

The effects of Zn addition on the glass forming ability and mechanical properties of Mg₆₅Cu_25?xZn_xTb₁₀ (x = 0, 2.5, 5, and 7.5) have been investigated. We show that small amounts of Zn addition improve the glass forming ability, strength, and ductility of the Mg–Cu–Tb bulk metallic glass. For the best glass forming composition, amorphous rods of Mg₆₅Cu₂₀Zn₅Tb₁₀ with a diameter of at least 7 mm have been prepared by a conventional copper mold casting method. Additionally, this composition exhibits obvious yielding and plastic deformation upon quasi-static compressive loading. The fracture strength, total strain to failure, and the plastic strain of the Mg₆₅Cu₂₀Zn₅Tb₁₀ bulk metallic glass reaches 1025 MPa, 2.05% and 0.15%, respectively. This is significantly superior compared to that exhibited by the original Zn-free Mg–Cu–Tb amorphous alloy.     

Effect of tellurium deposition rate on the properties of Cu–In–Te based thin films and solar cells

To investigate the effects of tellurium (Te) deposition rate on the properties of Cu–In–Te based thin films (Cu/In=0.30–0.31), the films were grown on both bare and Mo-coated soda-lime glass substrates at 200 °C by co-evaporation using a molecular beam epitaxy system. The microstructural properties were examined by means of scanning electron microscopy and X-ray diffraction. The crystalline quality of the films was improved with increase in the deposition rate of Te, and exhibited a single CuIn₃Te₅ phase with a highly preferred (1 1 2) orientation. Te-deficient film (Te/(Cu+In)=1.07) grown with a low Te deposition rate showed a narrow bandgap of 0.99 eV at room temperature. The solar cell performance was affected by the deposition rate of Te. The best solar cell fabricated using CuIn₃Te₅ thin films grown with the highest deposition rate of Te (2.6 nm/s) yielded a total area (0.50 cm²) efficiency of 4.4% (V_oc=309 mV, J_sc=28.0 mA/cm², and FF=0.509) without light soaking.     

Calculation of the parameters of the X-ray diffraction station with adaptive segmented optics on the side beam from the wiggler of the Sibir’-2 storage ring

The mounting of an X-ray diffraction station on the side beam of a 19-pole superconducting wiggler makes it possible not only to use the central synchrotron radiation beam with a wavelength of 0.5 ?, but also to solve problems requiring softer X rays at a synchrotron radiation (SR) intensity exceeding that for the beams from the bending magnet. A numerical simulation of the formation of photon beams from a source and their transmission through the elements of the station (and through the station as a whole) allows one to calculate the parameters of the station, compare it with the existing analogs, determine its potential and actual efficiency of its elements, and estimate the adjustment quality. A numerical simulation of the SR source on the side beam from the wiggler and the focusing channel (segmented condenser mirror, monochromator with sagittal focusing by the segmented second crystal, and segmented focusing mirror) has been performed. The sizes of the focus and the divergence of rays in it are determined with allowance for the finite sizes of segments. The intensity of radiation with a wavelength ?? = 1.0 ? in the focus is determined taking into account the loss in the SR extraction channel and in the focusing channel. The values of the critical wavelength for the side beam from the wiggler and the wavelength resolution are calculated. The intensities in the X-ray diffraction pattern and its angular resolution are found.