Magnetic properties of aerugite Co<Subscript>10</Subscript>Ge<Subscript>3</Subscript>O<Subscript>16</Subscript>

This paper reports on the first study of the temperature and field dependences of the magnetization, heat capacity, and electrical properties of synthesized polycrystalline samples of aerugite Co₁₀Ge₃O₁₆, as well as on x-ray diffraction analysis of this compound. It is shown that the cobalt ions in this compound occupy three nonequivalent positions. The results of the experimental and theoretical studies suggest that aerugite is a ferrimagnet with two uncompensated magnetic moments of the cobalt atom per formula unit.     

Performance of photorefractive crystals as derived from EPR-based defect studies: application to BaTiO<Subscript>3</Subscript>:Rh and Ba<Subscript>0.77</Subscript>Ca<Subscript>0.23</Subscript>TiO<Subscript>3</Subscript>:Rh

A method is introduced which allows us to predict the performance of a photorefractive material quantitatively using electron paramagnetic resonance (EPR)-based defect studies. This includes the determination of the defect densities and the parameters governing their light-induced charge changes. On this basis the effective trap densities and the photorefractive response times are calculated. All quantities can be determined without theoretical simplifications such as employed in previous approaches to the problem. The method is applied to BaTiO₃ and congruently melting Ba_0.77Ca_0.23TiO₃, both doped with rhodium. The iron defects, present as background contaminations, are fully taken into account. Their influence on the intensity saturating the space charges is calculated on this basis. The complete energy dependences of the absorption cross sections of all optically active Rh and Fe defects are given. PACS 42.70.Nq; 76.30.Mi; 78.40.-q     

All-solid-state intracavity frequency-doubled Nd:Y<Subscript>0.36</Subscript>Gd<Subscript>0.64</Subscript>VO<Subscript>4</Subscript>-GdCa<Subscript>4</Subscript>O(BO<Subscript>3</Subscript>)<Subscript>3</Subscript> green laser under direct 880 nm pumping

We report a green laser at 532 nm generation by intracavity frequency doubling of a continuous wave (CW) laser operation of a 1064 nm Nd:Y_0.36Gd_0.64VO₄ laser under in-band diode pumping at 880 nm. An GdCa₄O(BO₃)₃ (GdCOB) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 17.8 W, as high as 2.92 W of CW output power at 532 nm is achieved. The optical-to-optical conversion efficiency is up to 16.4%, and the fluctuation of the green output power was better than 2.5% in the given 30 min.     

Optical absorption by Nd<Superscript>3+</Superscript> and Gd<Superscript>3+</Superscript> ions in epitaxial films grown on Gd<Subscript>3</Subscript>Ga<Subscript>5</Subscript>O<Subscript>12</Subscript> substrates from a lead-containing solution melt

Epitaxial films of composition (Gd,Nd)₃Ga₅O₁₂ or (Gd,Y,Nd)₃Ga₅O₁₂ with a neodymium content varying from 0.3 to 15 at. % are grown by liquid-phase epitaxy from a supercooled PbO-B₂O₃-based solution melt on Gd₃Ga₅O₁₂(111) substrates. The optical absorption spectra of the epitaxial films grown are measured in the wavelength range 0.2–1.0 µm. The results of interpreting the absorption bands observed in the spectra are used to construct the energy level diagrams of Nd³⁺ and Gd³⁺ ions in the matrices of the epitaxial films.     

Perpendicular magnetic anisotropy in single-crystal Co<Subscript>50</Subscript>Pt<Subscript>50</Subscript>/MgO(100) films

The crystal structure and hysteretic magnetic properties of equiatomic single-crystal CoPt films applied on MgO substrates by magnetron sputtering, as well as modification of these properties by thermal annealing, are studied. Heat-treated films of thickness in the range 2<d≤16 nm exhibit perpendicular magnetic anisotropy. A correlation between the crystalline anisotropy constant of the CoPt films and the order parameter of the LI₀ superstructure in these alloys is found. The effect of a single-crystalline MgO substrate on the structure and magnetic properties of equiatomic CoPt films is revealed.     

Exchange coupling between Co<Subscript>0.9</Subscript>Fe<Subscript>0.1</Subscript> and bismuth ferrite layers: Cut (110)

The value of the exchange coupling between a Co_0.9Fe_0.1 nanolayer and a bismuth ferrite multiferroic (BiFeO₃) nanolayer has been calculated. Two possible variants of matching of the layer crystal structures are proposed. The interaction energy of the layers is shown to be sufficient to record information in the Co_0.9Fe_0.1 layer that enters in the composition of the magnetic tunnel junction by applying an electric field to the bismuth ferrite layer.     

Response of the electrical resistivity of La<Subscript>0.67</Subscript>Ba<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript>(20 nm)/LaAlO<Subscript>3</Subscript>(001) films to magnetic field and variation in temperature

The structure, electrical resistivity, and magnetotransport parameters of 20-nm-thick epitaxial La_0.67Ba_0.33MnO₃ films grown by laser ablation on LaAlO₃(001) substrates are studied. The unit cell volume V _eff = 58.80 ų of the as-grown manganite films is found to be less than that for bulk La_0.67Ba_0.33MnO₃ crystals. Maximum values of the negative magnetoresistance MR(μ₀ H = 1 T) = ?0.27 for La_0.67Ba_0.33MnO₃ films are observed at a temperature of about 225 K. For 5 < T < 100 K, the film magnetoresistance depends only weakly on temperature and is on the order of ?0.1. At temperatures below 100 K and for 3 < μ₀ H < 5 T, the electrical resistivity of the as-grown films decreases linearly with increasing magnetic field.     

Dielectric response of a (1000 nm)SrTiO<Subscript>3</Subscript> layer epitaxially grown on (001)La<Subscript>0.67</Subscript>Ca<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript> to temperature variation and electric field

The structure and dielectric characteristics of the (1000 nm)SrTiO₃ spacer in a (001)SrRuO₃ ‖ (001)SrTiO₃ ‖ (001)La_0.67Ca_0.33MnO₃ trilayer heterostructure grown on a (001)(LaAlO₃)_0.3+(Sr₂AlTaO₆)_0.7 substrate have been studied. Both oxide electrodes, as well as the strontium titanate layer, were cube-on-cube epitaxially grown. The unit cell parameter in the SrTiO₃ layer measured in the substrate plane (3.908±0.003 Å) practically coincided with that determined along the normal to the substrate surface (3.909±0.003 Å). The temperature dependence of the real part of the permittivity ?′ of the SrTiO₃ layer in the range 70–180 K fits the relation (?′)^?1 ～ ? ₀ ^?1 C ₀ ^?1 (T-T _C ) well, where C₀ and T_C are the Curie constant and the Curie-Weiss temperature, respectively, for bulk strontium titanate crystals and ?₀ is the free-space permittivity. The data obtained on the temperature dependence of the permittivity of SrTiO₃ films enabled us to evaluate the effective depth of electric field penetration into the manganite electrode (L _e ≈ 0.5 nm) and the corresponding capacitance (C _e ≈1×10^?6 F/cm²) of the interface separating the (001)SrTiO₃ layer from the (001)La_0.67Ca_0.33MnO₃ bottom electrode.     

Effect of high-temperature crystallization on the electrochemical properties of LiNi<Subscript>0.5</Subscript>Co<Subscript>0.2</Subscript>Mn<Subscript>0.3</Subscript>O<Subscript>2</Subscript> synthesized from a lithiated transition metal oxide precursor

The lithiated transition metal oxide precursor (LNCMO) with typical α-NaFeO₂ structure and imperfect crystallinity, obtained from a hydrothermal process, was pretreated at 500 °C and then subjected to sintering at 800–920 °C to synthesize the ternary layered LiNi_0.5Co_0.2Mn_0.3O₂ (NCM523). X-ray diffraction (XRD), scanning electron microscope (SEM), cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and charge/discharge testing were used for investigating the effect of the high-temperature crystallization on the properties of the NCM523 cathode materials. The results show that the materials heated at 880–900 °C possess superior cation ordering, perfect crystallinity, and excellent electrochemical performances, among which the material heated at 900 °C delivers better performances, with the initial discharge capacity of 152.6 mAh g^?1 at 0.5 C over 3.0 to 4.3 V and the capacity retention of 95.5% after 50 cycles. Furthermore, the effect of the high-temperature crystallization on the Li⁺ diffusion coefficient, potential polarization, and electrochemical resistance are discussed.     

Magnetic phase separation in the (La<Subscript>0.3</Subscript>Sr<Subscript>0.7</Subscript>)<Subscript>0.5</Subscript>Ca<Subscript>0.5</Subscript>FeO<Subscript>3</Subscript> solid solution with a perovskite structure

The crystal structure and magnetic properties of the (La_0.3Sr_0.7)_0.5Ca_0.5FeO₃ solid solution with a perovskite structure have been investigated. The solid solution has been synthesized according to the high-pressure technique. The unit cell parameters have been refined using the Rietveld full-profile analysis under the assumption of the single-phase crystalline state and the two-phase model corresponding to the parent compositions. It follows from the calculations that the best agreement between the experimental data and the theoretical curve is observed for the two-phase model. The measurement of the magnetic properties also indicates the coexistence of two magnetic phases.     

Roles of Al-doped ZnO (AZO) modification layer on improving electrochemical performance of LiNi<Subscript>1/3</Subscript>Co<Subscript>1/3</Subscript>Mn<Subscript>1/3</Subscript>O<Subscript>2</Subscript> thin film cathode

Al-doped ZnO (AZO) was sputtered on the surface of LiNi_1/3Co_1/3Mn_1/3O₂ (NCM) thin film electrode via radio frequency magnetron sputtering, which was demonstrated to be a useful approach to enhance electrochemical performance of thin film electrode. The structure and morphology of the prepared electrodes were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive spectrometer, and transmission electron microscopy techniques. The results clearly demonstrated that NCM thin film showed a strong (104) preferred orientation and AZO was uniformly covered on the surface of NCM electrode. After 200 cycles at 50 μA μm^?1 cm^?2, the NCM/AZO-60s electrode delivered highest discharge capacity (78.1 μAh μm^?1 cm^?2) compared with that of the NCM/AZO-120s electrode (62.4 μAh μm^?1 cm^?2) and the bare NCM electrode (22.3 μAh μm^?1 cm^?2). In addition, the rate capability of the NCM/AZO-60s electrode was superior to the NCM/AZO-120s and bare NCM electrodes. The improved electrochemical performance can be ascribed to the appropriate thickness of the AZO coating layer, which not only acted as HF scavenger to keep a stable electrode/electrolyte interface but also reduced the charge transfer resistance during cycling.     

Magnetic properties of arrays of cobalt nanoparticles on the CaF<Subscript>2</Subscript>(110)/Si(001) surface

The Co/CaF₂/Si(001) heterostructures with the corrugated (110) surface of the CaF₂ buffer layer have been grown by molecular beam epitaxy. The structures are nanoparticle arrays of single-crystal Co, mostly of the cubic fcc modification. The behavior of the magnetic hysteresis loops as a function of the density of coverage of the substrate by cobalt islands, the island size, and the temperature is studied using the magnetooptical technique. At low coverage densities, where the effective cobalt film thickness d _eff is less than the critical value d _eff ^c , the magnetic structure of the films at T = 294 K can be visualized as an ensemble of superparamagnetic, weakly interacting nanoparticles and is characterized by small values of the coercive field H _c and the remanent magnetization M _rem. A decrease in the temperature leads to a strong increase in H _c and M _rem, which is associated with the transition of the islands to the blocked state. The blocking temperature of the structures is T _b ～ 280 K. The magnetic anisotropy parameter K and the saturation magnetization M _s of the islands depend on the growth temperature of cobalt T _Co. An increase in the coverage density above the critical thickness d _iff ^c at T = 294 K brings about a strong increase in H _c and M _rem and the appearance of a hysteresis loop anisotropy originating from the corrugated structure of the CaF₂ buffer layer. The experimental results are compared with the model of an ensemble of noninteracting superparamagnetic particles.     

Improvement of the intergranular pinning energy in uniaxially compacting (Bi-Pb)<Subscript>2</Subscript>Sr<Subscript>2</Subscript>Ca<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>10+δ</Subscript> ceramic samples

Measurements of the electrical resistivity as a function of temperature, ρ(T), for different values of applied magnetic field, B_a (0 ≤ B_a ≤ 50 mT), were performed in polycrystalline samples of Bi_1.65Pb_0.35Sr₂Ca₂ Cu₃O_10+δ subjected to different uniaxial compacting pressure (UCP). We have found appreciable differences in the grain orientation between samples by using X-ray diffractometry. From the X-ray diffraction patterns performed, in powder and pellet samples, we have estimated the Lotgering factor along the (00l) direction, F_(00l). The results indicate that F_(00l) increases ~23% with increasing UCP suggesting that grains of these samples are preferentially aligned along the c-axis, which is parallel to the compacting direction. The resistive transition of the samples have been interpreted in terms of the thermally activated flux-creep model. In addition, the effective intergranular pinning energy, U₀, have been determined for different applied magnetic field. The magnetic field dependence of U₀, for B_a > 8 mT, was found to follow a H^{- α} dependence with α = 0.5 for all samples. The analysis of the experimental data strongly suggested that increasing UCP results in appreciable changes in both the grain alignment and the grain connectivity of the samples. We have successfully interpreted the data by considering the existence of three different superconducting levels within the samples: the superconducting grains, the weak-links, and the superconducting clusters.     

Investigation of the conditions of efficient I*<Subscript>2</Subscript> (342 nm) luminescence in a barrier discharge in a Kr-I<Subscript>2</Subscript> mixture

The energy and spectral characteristics of a barrier discharge in a mixture of iodine vapor with krypton have been investigated theoretically and experimentally. The emission spectrum consists of the single I*₂ molecular band D′ → A′ peaking at 342 nm, the iodine resonance line at 206.2 nm, and the group of bands corresponding to iodine emission. The highest intensity of the I*₂ (342 nm) band was obtained at a mixture pressure near 450 Torr. A mean output power and an efficiency of 550 mW and 1.6%, respectively, have been achieved. It is shown that, for the I₂ barrier-discharge excilamp, the homogeneous, rather than filamentary form of discharge glow is optimal from the viewpoint of the highest mean output power. The maximal calculated value of the emission efficiency for the 342-nm band was 5%. The main processes determining energy losses in plasma have been found, and ways to increase the efficiency of emission in the D′ → A′ band of the I*₂ molecule have been proposed.     

Fast electrochromic response of porous-structured cobalt oxide (Co<Subscript>3</Subscript>O<Subscript>4</Subscript>) thin films by novel nebulizer spray pyrolysis technique

Electrochromic effect of cobalt oxide thin films was studied as a function of substrate temperature (573–673 K). Tricobalt tetraoxide (Co₃O₄) thin films were deposited on glass and fluorine-doped tin oxide (FTO) substrates by nebulized spray technique using cobalt nitrate as precursor material. The XRD patterns indicated (311) plane was dominant for all the films irrespective of the deposition temperature. Williamson-Hall (W-H) analysis was made to understand the strain variation in the prepared Co₃O₄ films under different deposition temperature by employing uniform deformation model (UDM). Scanning electron microscopy images revealed porous morphology for the film prepared at 623 K. The optical parameters such as refractive index (n), extinction coefficient (k), and band gap were derived from UV-visible spectra of Co₃O₄ films. The electrochromic performance of the deposited Co₃O₄ films was analyzed through cyclic voltammetry, chronocoulometry, chronoamperometry, and iono-optical studies.     

Magnetic Properties of CaMnO<Subscript>3</Subscript> Layers on the (100) Surface of BaTiO<Subscript>3</Subscript>

“Ab-initio” calculations of the electronic structure of the heterojunction (001) between cubic CaMnO₃ and BaTiO₃ perovskites are performed on the basis of density functional theory for different variants of magnetic ordering in calcium manganite. The paper considers some cases of ferromagnetic and antiferromagnetic A-type ordering. Comparison of the total energies of these structures shows that antiferromagnetic ordering in CaMnO3 is the most favorable. All the studied structures in a ferromagnetic state are half-metallic ferromagnets.     

Investigations of EPR parameters and impurity structure for Co<Superscript>2+</Superscript> in Ca(OH)<Subscript>2</Subscript> crystal

The electron paramagnetic resonance (EPR) parameters (g _‖ andg _⊥ factors and hyperfine structure constantsA _‖,A _⊥) for Co²⁺ in Ca(OH)₂ are studied from the second-order perturbation formulas on the basis of the cluster approach. In these formulas, the contributions to EPR parameters from the state interactions and covalency effects are considered and the parameters related to both effects are obtained from the optical spectra and impurity structure of the studied system. From the study, it is found that the β angle between the metal-ligand bond and the C₃ axis changes from 61° in a pure crystal to 53.68(26)° in the impurity center of a Co²⁺-doped Ca(OH)₂ crystal because of the impurity-induced local lattice relaxation. The reduction of the angle β in the impurity center is also supported by the result obtained by analyzing the EPR zero-field splitting for Mn²⁺ in the same Ca(OH)₂ crystal. The EPR parameters of Ca(OH)₂:Co²⁺ are also reasonably explained by considering the suitable local lattice relaxation.     

Lasing Yb<Superscript>3+</Superscript> in crystals with a wavelength dependence anisotropy displayed from La<Subscript>2</Subscript>CaB<Subscript>10</Subscript>O<Subscript>19</Subscript>

We report spectroscopic and laser properties for propagation directions outside the principal axes of Yb³⁺-doped low symmetry laser crystals with a special devotion to the wavelength dependence anisotropy. We illustrate our report with experimental data in the 900–1075 nm range of wavelengths from the Yb³⁺:La₂CaB₁₀O₁₉ monoclinic crystal excited under laser diode pumping at 975 nm. This study, which makes easier the realization of Yb³⁺ lasers with an efficient free-running operation at the wavelength having the highest emission intensity or at a specified wavelength, or emitting two frequencies with a specified frequency difference, is of promising interest for applications.     

Electronic structure and thermoelectric properties of (Mg<Subscript>2</Subscript>X)<Subscript>2</Subscript> / (Mg<Subscript>2</Subscript>Y)<Subscript>2</Subscript> (X,Y = Si,Ge, Sn) superlattices from first-principle calculations

To identify thermoelectric materials containing abundant, low-cost and non-toxicelements, we have studied the electronic structures and thermoelectric properties of(Mg₂X)₂/(Mg₂Y)₂ (X, Y = Si, Ge, Sn) superlattices withstate-of-the-art first-principles calculations using a modified Becke and Johnson (mBJ)exchange potential. Our results show that (Mg₂Ge)₂/ (Mg₂Sn)₂ and(Mg₂Si)₂/(Mg₂Sn)₂ are semi-metals using mBJ plusspin-orbit coupling (mBJ +SOC), while (Mg₂Si)₂/ (Mg₂Ge)₂ ispredicted to be a direct-gap semiconductor with a mBJ gap value of 0.46 eV andmBJ + SOC gap valueof 0.44 eV. Thermoelectric properties are predicted by through solving the Boltzmanntransport equations within the constant scattering time approximation. It is found that(Mg₂Si)₂/(Mg₂Ge)₂ has a larger Seebeck coefficient andpower factor than (Mg₂Ge)₂/ (Mg₂Sn)₂ and(Mg₂Si)₂/(Mg₂Sn)₂ for both p-type and n-type doping. Thedetrimental influence of SOC on the power factor of p-type (Mg₂X)₂/(Mg₂Y)₂ (X, Y = Si, Ge, Sn) is analyzed as afunction of the carrier concentration, but there is a negligible SOC effect for n-type.These results can be explained by the influence of SOC on their valence and conductionbands near the Fermi level.