Elastic scattering of surface states on three-dimensional topological insulators

Topological insulators as a new type of quantum matter materials are characterized by a full insulating gap in the bulk and gapless edge/surface states protected by the time-reversal symmetry. We propose that the interference patterns caused by the elastic scattering of defects or impurities are dominated by the surface states at the extremal points on the constant energy contour. Within such a formalism, we summarize our recent theoretical investigations on the elastic scattering of topological surface states by various imperfections, including non-magnetic impurities, magnetic impurities, step edges, and various other defects, in comparison with the recent related experiments in typical topological materials such as BiSb alloys, Bi2Te3, and Bi2Se3 crystals.     

Electrostatic field effects on three-dimensional topological insulators

Three-dimensional topological insulators are a new class of quantum matter which has interesting connections to nearly all main branches of condensed matter physics. In this article, we briefly review the advances in the field effect control of chemical potential in three-dimensional topological insulators. It is essential to the observation of many exotic quantum phenomena predicted to emerge from the topological insulators and their hybrid structures with other materials. We also describe various methods for probing the surface state transport. Some challenges in experimental study of electron transport in topological insulators will also be briefly discussed.     

Electron transport properties of three-dimensional topological insulators

We review experimental advances in the study of the electron transport in three-dimensional topological insulators with emphasis on experiments that attempted to identify the surface transport. Recent results on transport properties of topological insulator thin films will be discussed in the context of weak antilocalization and electron-electron interactions. Current status of gate-voltage control of the chemical potential in topological insulators will also be described.     

三维拓扑绝缘体antidot阵列结构中的磁致输运研究

利用聚焦离子束刻蚀技术在拓扑绝缘体Bi_2Se_3薄膜中刻蚀了纳米尺度的反点(antidot)阵列,并对制作的三个器件进行了系统的电学输运测量研究.低温下,所有器件中都观察到明显的弱反局域化效应.通过对弱反局域化效应的分析,发现器件一(Dev-1,不含有antidot阵列)和器件二(Dev-2,含有周期较大的antidot阵列)是始终由一个导电通道主导的量子输运系统,但在器件三(Dev-3,含有周期较小的antidot阵列)中能明确观察到较低温度下存在两个独立的导电通道,而在较高温度下Dev-3表现为由一个导电通道主导的量子输运系统.     

Tunable Casimir repulsion with three-dimensional topological insulators

In this Letter, we show that switching between repulsive and attractive Casimir forces by means of external tunable parameters could be realized with two topological insulator plates. We find two regimes where a repulsive (attractive) force is found at small (large) distances between the plates, canceling out at a critical distance. For a frequency range where the effective electromagnetic action is valid, this distance appears at length scales corresponding to 1 - ?(ω) ～ (2/π)αθ.     

Dynamics of electron wave packets in topological insulators

Dynamics of wave packets formed by surface (edge) electronic states in topological insulators has been investigated. The spin and electron probability density, as well as zitterbewegung, of wave packets have been calculated analytically and numerically for various values of the Hamiltonian parameters. The effects of the main parameters (size and spin polarization) of the wave packets on a change in the packet shape and oscillations of their average velocity have been considered.     

On the origin of two-dimensional electron gas states at the surface of topological insulators

The ab initio calculations of the electronic structure in the bulk and at the (0001) surface of narrow-band Bi₂Se₃, Sb₂Te₃, Sb₂STe₃, and Sb₂SeTe₂ semiconductors have been performed. It has been shown that ternary compounds Sb₂STe₂ and Sb₂SeTe₂, as well as the previously known compounds Bi₂Se₃ and Sb₂Te₃, are three-dimensional topological insulators. The influence of the subsurface van der Waals gap expansion on the surface electronic structure of these compounds has been analyzed. It has been shown that this expansion leads to the formation of new (trivial) surface states, namely a parabolic state in the conduction band and an M-shaped state in the valence band. These results explain the phenomena discovered recently in photoemission experiments and reveal the nature of new states that are caused by the adsorption of atoms on the surfaces of the layered topological insulators.     

Appearance and disappearance of edge states in topological insulators

We investigate the relationship between spin Chern numbers and edge state properties in general situations, where the time-reversal symmetry may be broken. As an example, we consider a thin film of three-dimensional topological insulators sandwiched between two ferromagnetic insulators with an antiparallel magnetization configuration. A topological quantum spin Hall phase with quantized spin Chern numbers C _± =  ±1, and a trivial insulator with C _± = 0 are found in different parameter regions. With tuning parameters, the quantum phase transition between the two phases can occur through closing of the spin spectrum gap rather than energy gap. It is further shown that for a junction between samples with different parameters, appearance of edge states at the interface is always related to the mismatch of spin Chern numbers, independent of symmetries.     

Electron localization in ultrathin films of three-dimensional topological insulators

The recent discovery of three-dimensional(3D) topological insulators(TIs) has provided a fertile ground for obtaining further insights into electron localization in condensed matter systems.In the past few years,a tremendous amount of research effort has been devoted to investigate electron transport properties of 3D TIs and their low dimensional structures in a wide range of disorder strength,covering transport regimes from weak antilocalization to strong localization.The knowledge gained from these studies not only offers sensitive means to probe the surface states of 3D TIs but also forms a basis for exploring novel topological phases.In this article,we briefly review the main experimental progress in the study of the localization in 3D TIs,with a focus on the latest results on ultrathin TI films.Some new transport data will also be presented in order to complement those reported previously in the literature.     

Elastic three-dimensional phononic topological insulators with Dirac hierarchy

Three-dimensional(3D) phononic topological insulators(TIs) featuring two-dimensional(2D) surface states and one-dimensional(1D) hinge states have opened up a new route for multi-dimensional robust wave transport,providing unprecedented methods for integrated acoustic sensors and energy harvesting devices.However,aiming at the elastic 3D phononic TI with gapless surface states and hinge states,the realization of elastic 3D phononic TIs with gapless surface states and hinge states is a significant...     

New family of three-dimensional topological insulators with antiperovskite structure

All known topological insulators are crystallographically related to either the noncentrosymmetric zinc-blende HgTe-type family or to the hexagonal centrosymmetric Bi2Se3 one. Through first-principles calculations, here we show evidence that under a proper uniaxial strain cubic ternary centrosymmetric antiperovskite compounds (M3N)Bi (M=Ca, Sr, and Ba) are three-dimensional topological insulators. This proposed family of materials is chemically inert and the lattice structure is well matched to important semiconductors, which provides a rich platform to easily integrate with electronic devices.     

Anomalous Josephson current via Majorana bound states in topological insulators

We propose a setup involving Majorana bound states (MBS) hosted by a vortex on a superconducting surface of a 3D topological insulator (TI). We consider a narrow channel drilled across a TI slab with both sides covered by s-wave superconductor. In the presence of a vortex pinned to such a channel, it acts as a ballistic nanowire connecting the superconducting surfaces, with a pair of MBS localized in it. The energies of the MBS possess a 4π-periodic dependence on the superconductive phase difference φ between the surfaces. It results in the appearance of an anomalous term in the current-phase relation I(a)(φ) for the supercurrent flowing along the channel between the superconductive surfaces. We have calculated the shape of the 4π-periodic function I(a)(φ), as well as the dependence of its amplitude on temperature and system parameters.     

Unconventional pairing in three-dimensional topological insulators with a warped surface state

We study the effect of the Fermi surface anisotropy (hexagonal warping) on the superconducting pair potential, induced in a three-dimensional topological insulator (TI) by proximity with an s-wave superconductor (S) in presence of a magnetic moment of a nearby ferromagnetic insulator (FI). In the previous studies, similar problem was treated with a simplified Hamiltonian, describing an isotropic Dirac cone dispersion. This approximation is only valid near the Dirac point. However, in topological insulators, the chemical potential often lies well above this point, where the Dirac cone is strongly anisotropic and its constant energy contour has a snowflake shape. Taking into account this shape, we show that a very exotic pair potential is induced on the topological insulator surface. Based on the symmetry arguments we also discuss the possibility of a supercurrent flowing along the S/FI interface, when an S/FI hybrid structure is formed on the TI surface.     

Gapless interface states between topological insulators with opposite Dirac velocities

The Dirac cone on a surface of a topological insulator shows linear dispersion analogous to optics and its velocity depends on materials. We consider a junction of two topological insulators with different velocities, and calculate the reflectance and transmittance. We find that they reflect the backscattering-free nature of the helical surface states. When the two velocities have opposite signs, both transmission and reflection are prohibited for normal incidence, when a mirror symmetry normal to the junction is preserved. In this case we show that there necessarily exist gapless states at the interface between the two topological insulators. Their existence is protected by mirror symmetry, and they have characteristic dispersions depending on the symmetry of the system.     

Pseudo topological insulators

We predict pseudo topological insulators that have been previously overlooked. We determine some conditions under which robust pseudo topological edge states appear and illustrate our idea on the Su–Schrieffer–Heeger (SSH) model with extra chiral symmetry breaking potentials. We discuss that pseudo topological insulating phase transition occurs without band gap closing.     

A honeycomb lattice model simulating the surface states of topological insulators

A honeycomb lattice model exhibiting the quantum spin-Hall effect is proposed, where the low-energy properties of the electrons are mainly determined by the energy spectrum in the vicinity of the Γ point, for suitable parameters. The nontrivial topology of the energy bands is revealed by calculating the Chern numbers, Berry curvature distribution, and edge state spectrum. We further show that in the continuum limit, the model Hamiltonian is equivalent to the effective model for the surface states in thin films of three-dimensional topological insulators. As a consequence, this lattice model provides a useful tool for numerical simulation of the physical properties of the surface states.     

CO oxidation facilitated by robust surface states on Au-covered topological insulators

Surface states--the electronic states emerging as a solid material terminates at a surface--are usually vulnerable to contaminations and defects. The robust topological surface state(s) (TSS) on the three-dimensional topological insulators provide a perfect platform for exploiting surface states in less stringent environments. Employing first-principles density functional theory calculations, we demonstrate that the TSS can play a vital role in facilitating surface reactions by serving as an effective electron bath. We use CO oxidation on gold-covered Bi(2)Se(3) as a prototype example, and show that the robust TSS can significantly enhance the adsorption energy of both CO and O(2) molecules, by promoting different directions of static electron transfer. The concept of TSS as an electron bath may lead to new design principles beyond the conventional d-band theory of heterogeneous catalysis.     

Dephasing effects in topological insulators

Topological insulators, a class of typical topological materials in both two dimensions and three dimensions,are insulating in bulk and metallic at surface. The spin-momentum locked surface states and peculiar transport properties exhibit promising potential applications on quantum devices, which generate extensive interest in the last decade. Dephasing is the process of the loss of phase coherence, which inevitably exists in a realistic sample. In this review, we focus on recent progress in dephasing effects on the topological insulators. In general, there are two types of dephasing processes: normal dephasing and spin dephasing. In two-dimensional topological insulators, the phenomenologically numerical investigation shows that the longitudinal resistance plateaus is robust against normal dephasing but fragile with spin dephasing. Several microscopic mechanisms of spin dephasing are then discussed. In three-dimensional topological insulators, the helical surface states exhibit a helical spin texture due to the spin-momentum locking mechanism. Thus, normal dephasing has close connection to spin dephasing in this case, and gives rise to anomalous “gap-like” feature. Dephasing effects on properties of helical surface states are investigated.     

Photoexcitation in two-dimensional topological insulators

One of the most fascinating challenges in Physics is the realization of an electron-based counterpart of quantum optics, which requires the capability to generate and control single electron wave packets. The edge states of quantum spin Hall (QSH) systems, i.e., two-dimensional (2D) topological insulators realized in HgTe/CdTe and InAs/GaSb quantum wells, may turn the tide in the field, as they do not require the magnetic field that limits the implementations based on quantum Hall effect. However, the band structure of these topological states, described by a massless Dirac fermion Hamiltonian, prevents electron photoexcitation via the customary vertical electric dipole transitions of conventional optoelectronics. So far, proposals to overcome this problem are based on magnetic dipole transitions induced via Zeeman coupling by circularly polarised radiation, and are limited by the g-factor. Alternatively, optical transitions can be induced from the edge states to the bulk states, which are not topologically protected though.Here we show that an electric pulse, localized in space and/or time and applied at a QSH edge, can photoexcite electron wavepackets by intra-branch electrical transitions, without invoking the bulk states or the Zeeman coupling. Such wavepackets are spin-polarised and propagate in opposite directions, with a density profile that is independent of the initial equilibrium temperature and that does not exhibit dispersion, as a result of the linearity of the spectrum and of the chiral anomaly characterising massless Dirac electrons. We also investigate the photoexcited energy distribution and show how, under appropriate circumstances, minimal excitations (Levitons) are generated. Furthermore, we show that the presence of a Rashba spin–orbit coupling can be exploited to tailor the shape of photoexcited wavepackets. Possible experimental realizations are also discussed.     

Electronic structure of three-dimensional topological insulators: thickness dependence and warping effect

We theoretically study the electronic structure of a three-dimensional topological insulator using a 3D lattice model with a warping term included. Thickness dependence of the electronic structure and the shape of constant-energy contour at different energy are both investigated in this model. We demonstrate that an energy gap opens in the surface state when the thickness is below six quintuple layers and disappears for thicker topological insulators. With the increasing of energy, the shape of constant-energy contour of the surface state band gradually evolves from a point at Dirac point to a circle with increasing volume, then to a hexagon, and finally to a hexagram. We clarify that the critical thickness of six quintuple is not modified by the warping term and the appearance of a hexagram is not influenced by the finite size effect. These phenomena agree well with recent angle-resolved photoemission spectroscopy experiments.